Conception, fabrication et réalisation de sources lasers hybrides III-V sur silicium, 2014. ,
De la conception à la fabrication de sources lasers hybrides III-V sur silicium pour des circuits photoniques intégrés ,
Design, fabrication and characterization of a hybrid III-V on silicon transmitter for high-speed communications ,
URL : https://hal.archives-ouvertes.fr/tel-01529424
Stimulated Optical Radiation in Ruby, Nature, vol.187, issue.4736, pp.493-494, 1960. ,
DOI : 10.1103/PhysRevLett.4.564
Integrated Optics: An Introduction, Bell System Technical Journal, vol.48, issue.7, pp.2059-2069, 1969. ,
DOI : 10.1002/j.1538-7305.1969.tb01165.x
RADIATION LOSSES IN GLASS OPTICAL WAVEGUIDES, Applied Physics Letters, vol.48, issue.10, pp.423-425, 1970. ,
DOI : 10.1002/j.1538-7305.1969.tb01169.x
Ultimate low-loss single-mode fibre at 1.55 ??m, Electronics Letters, vol.15, issue.4, pp.106-108, 1979. ,
DOI : 10.1049/el:19790077
Progress in Low-Power Switched Optical Interconnects, IEEE Journal of Selected Topics in Quantum Electronics, vol.17, issue.2, pp.357-376, 2011. ,
DOI : 10.1109/JSTQE.2010.2081350
An integrated silicon photonics technology for O-band datacom, 2015 IEEE International Electron Devices Meeting (IEDM), 2015. ,
DOI : 10.1109/IEDM.2015.7409768
Silicon Photonics R&D and Manufacturing on 300-mm Wafer Platform, Journal of Lightwave Technology, vol.34, issue.2 ,
DOI : 10.1109/JLT.2015.2481602
A 30 GHz silicon photonic platform, pp.878107-878107, 2013. ,
DOI : 10.1117/12.2019207
Introducing photonic devices for 40Gbits/s wavelength division multiplexing transceivers on 300-mm SOI wafers using CMOS processes, pp.89880-89880, 2014. ,
DOI : 10.1117/12.2042496
URL : https://hal.archives-ouvertes.fr/hal-01490317
Review of Silicon Photonics Foundry Efforts, IEEE Journal of Selected Topics in Quantum Electronics, vol.20, issue.4, pp.405-416, 2014. ,
DOI : 10.1109/JSTQE.2013.2293274
hard mask and fluorine-based dry etching, Journal of Micromechanics and Microengineering, vol.25, issue.1, p.15003, 2015. ,
DOI : 10.1088/0960-1317/25/1/015003
Silicon-on-Insulator Spectral Filters Fabricated With CMOS Technology, IEEE Journal of Selected Topics in Quantum Electronics, vol.16, issue.1, pp.33-44, 2010. ,
DOI : 10.1109/JSTQE.2009.2039680
Low-Crosstalk Fabrication-Insensitive Echelle Grating Demultiplexers on Silicon-on-Insulator, IEEE Photonics Technology Letters, vol.27, issue.5, pp.494-497, 2015. ,
DOI : 10.1109/LPT.2014.2377075
Reconfigurable multi-channel second-order silicon microring-resonator filterbanks for on-chip WDM systems, Optics Express, vol.19, issue.1, pp.306-316, 2011. ,
DOI : 10.1364/OE.19.000306
Low-Loss (<formula formulatype="inline"><tex Notation="TeX">$<$</tex> </formula>1 dB) and Polarization-Insensitive Edge Fiber Couplers Fabricated on 200-mm Silicon-on-Insulator Wafers, IEEE Photonics Technology Letters, vol.22, issue.11, pp.739-741, 2010. ,
DOI : 10.1109/LPT.2010.2044992
A Grating-Coupler-Enabled CMOS Photonics Platform, IEEE Journal of Selected Topics in Quantum Electronics, vol.17, issue.3, pp.597-608, 2011. ,
DOI : 10.1109/JSTQE.2010.2086049
Multiple wavelength silicon photonic 200 mm R+D platform for 25Gb/s and above applications, Proc. SPIE 9891, Silicon Photonics and Photonic Integrated Circuits V, 98911C, 2016. ,
High speed silicon Mach-Zehnder modulator, Optics Express, vol.13, issue.8, pp.3129-3135, 2005. ,
DOI : 10.1364/OPEX.13.003129
Low loss and high speed silicon optical modulator based on a lateral carrier depletion structure, Optics Express, vol.16, issue.1, pp.334-339, 2008. ,
DOI : 10.1364/OE.16.000334
Développement de photodiodes à avalanche en Ge sur Si pour la détection faible signal et grande vitesse, 2014. ,
High-speed, low-loss silicon Mach???Zehnder modulators with doping optimization, Optics Express, vol.21, issue.4, pp.4116-4125, 2013. ,
DOI : 10.1364/OE.21.004116
Low-Voltage, Low-Loss, Multi-Gb/s Silicon Micro-Ring Modulator based on a MOS Capacitor, Optical Fiber Communication Conference, pp.2-4, 2012. ,
DOI : 10.1364/OFC.2012.OM2E.4
Power-efficient III-V/Silicon external cavity DBR lasers, Optics Express, vol.20, issue.21, pp.23456-23462, 2012. ,
DOI : 10.1364/OE.20.023456
Efficient silicon light-emitting diodes, Nature, vol.53, issue.9, pp.805-808, 2001. ,
DOI : 10.1063/1.1325229
An efficient room-temperature silicon-based light-emitting diode, Nature, vol.69, issue.6825, pp.192-194, 2001. ,
DOI : 10.1063/1.117678
Er-Coupled Si Nanocluster Waveguide, IEEE Journal of Selected Topics in Quantum Electronics, vol.12, issue.6, pp.1607-1617, 2006. ,
DOI : 10.1109/JSTQE.2006.885141
URL : http://diposit.ub.edu/dspace/bitstream/2445/8757/1/553549.pdf
coupled to Si nanoclusters rib waveguides, Silicon Photonics and Photonic Integrated Circuits, pp.699619-699619, 2008. ,
DOI : 10.1117/12.781443
Light Emission in Silicon Nanostructures, Nanoscale Science and Technology, pp.185-209, 1998. ,
DOI : 10.1117/12.452153
Light emission from Si quantum dots, Materials Today, vol.8, issue.1, pp.26-33, 2005. ,
DOI : 10.1016/S1369-7021(04)00676-5
URL : https://doi.org/10.1016/s1369-7021(04)00676-5
Optical gain and stimulated emission in periodic nanopatterned crystalline silicon, Nature Materials, vol.126, issue.12, pp.887-891, 2005. ,
DOI : 10.1364/OPEX.12.005690
Optical gain in silicon nanocrystals, Silicon-based and Hybrid Optoelectronics III, pp.440-444, 2000. ,
DOI : 10.1117/12.426932
A continuous-wave Raman silicon laser, Nature, vol.29, issue.7027, pp.725-728, 2005. ,
DOI : 10.1364/OL.29.001224
Ge-on-Si laser operating at room temperature, Optics Letters, vol.35, issue.5, pp.679-681, 2010. ,
DOI : 10.1364/OL.35.000679
An electrically pumped germanium laser, Optics Express, vol.20, issue.10, pp.11316-11320, 2012. ,
DOI : 10.1364/OE.20.011316
Direct-Gap Gain and Optical Absorption in Germanium Correlated to the Density of Photoexcited Carriers, Doping, and Strain, Physical Review Letters, vol.109, issue.5, p.57402, 2012. ,
DOI : 10.1103/PhysRev.105.885
-type germanium, Physical Review B, vol.2008, issue.23, p.235313, 2013. ,
DOI : 10.1103/PhysRevB.76.115202
Roadmap to an Efficient Germanium-on-Silicon Laser: Strain vs. n-Type Doping, IEEE Photonics Journal, vol.4, issue.5, pp.2002-2009, 2012. ,
DOI : 10.1109/JPHOT.2012.2221692
Modeling of Edge-Emitting Lasers Based on Tensile Strained Germanium Microstrips, IEEE Photonics Journal, vol.7, issue.3, pp.1-15, 2015. ,
DOI : 10.1109/JPHOT.2015.2427093
Excess carrier lifetimes in Ge layers on Si, Applied Physics Letters, vol.104, issue.6, p.62106, 2014. ,
DOI : 10.1063/1.2803715
Band structure and optical gain of tensile-strained germanium based on a 30 band k???p formalism, Journal of Applied Physics, vol.17, issue.1, p.13710, 2010. ,
DOI : 10.1002/pssb.2221260102
How to convert group-IV semiconductors into light emitters, Physica Scripta, vol.49, issue.T49B, p.476, 1993. ,
DOI : 10.1088/0031-8949/1993/T49B/017
Strain-induced band gap shrinkage in Ge grown on Si substrate, Applied Physics Letters, vol.82, issue.13, pp.2044-2046, 2003. ,
DOI : 10.1063/1.91831
Strain-induced enhancement of near-infrared absorption in Ge epitaxial layers grown on Si substrate, Journal of Applied Physics, vol.1, issue.1, p.13501, 2005. ,
DOI : 10.1063/1.356682
High tensile strain transfer into germanium microdisks using all-around strained SiN, 11th International Conference on Group IV Photonics (GFP), pp.229-230, 2014. ,
DOI : 10.1109/Group4.2014.6961938
Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process, Optics Express, vol.22, issue.1, pp.399-410, 2014. ,
DOI : 10.1364/OE.22.000399
Expanding the Ge emission wavelength to 2.25??m with SixNy strain engineering, Thin Solid Films, vol.602, pp.60-63, 2016. ,
DOI : 10.1016/j.tsf.2015.07.017
Analysis of enhanced light emission from highly strained germanium microbridges, Nature Photonics, vol.48, issue.6, pp.466-472, 2013. ,
DOI : 10.1016/j.sse.2004.01.013
Strain-Induced Pseudoheterostructure Nanowires Confining Carriers at Room Temperature with Nanoscale-Tunable Band Profiles, Nano Letters, vol.13, issue.7, pp.3118-3123, 2013. ,
DOI : 10.1021/nl401042n
Direct bandgap germanium-on-silicon inferred from 57% ???100??? uniaxial tensile strain [Invited], Photonics Research, vol.2, issue.3, pp.8-13, 2014. ,
DOI : 10.1364/PRJ.2.0000A8
Uniaxially stressed germanium with fundamental direct band gap, 2015. ,
Germanium under High Tensile Stress: Nonlinear Dependence of Direct Band Gap vs Strain, ACS Photonics, vol.3, issue.10, 2016. ,
DOI : 10.1021/acsphotonics.6b00429
Light Emitting Diodes, Kirk-Othmer Encyclopedia of Chemical Technology, 2000. ,
High-Performance $\hbox{In}_{0.5}\hbox{Ga}_{0.5} \hbox{As/GaAs}$ Quantum-Dot Lasers on Silicon With Multiple-Layer Quantum-Dot Dislocation Filters, IEEE Transactions on Electron Devices, vol.54, issue.11, pp.2849-2855, 2007. ,
DOI : 10.1109/TED.2007.906928
Groove-Coupled InGaAs/GaAs Quantum Dot Laser/Waveguide on Silicon, Journal of Lightwave Technology, vol.25, issue.7, pp.1826-1831, 2007. ,
DOI : 10.1109/JLT.2007.899165
Electrically pumped continuous-wave III???V quantum dot lasers on silicon, Nature Photonics, vol.40, issue.5, pp.307-311, 2016. ,
DOI : 10.1049/el:20046692
Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding, Chinese Physics Letters, vol.26, issue.6, p.64211, 2009. ,
DOI : 10.1088/0256-307X/26/6/064211
III-V/Si photonics by die-to-wafer bonding, Materials Today, vol.10, issue.7-8, pp.36-43, 2007. ,
DOI : 10.1016/S1369-7021(07)70178-5
(Invited) Heterogeneously Integrated III-V on Silicon Lasers, ECS Transactions, vol.64, issue.5, pp.211-223, 2014. ,
DOI : 10.1149/06405.0211ecst
CWDM Transmitter Module Based on Hybrid Integration, IEEE Journal of Selected Topics in Quantum Electronics, vol.12, issue.5, pp.983-987, 2006. ,
DOI : 10.1109/JSTQE.2006.882643
III-V/silicon photonics for on-chip and intra-chip optical interconnects, Laser & Photonics Reviews, vol.3, issue.6, pp.751-779, 2010. ,
DOI : 10.1002/lpor.200900033
Room-temperature CW operation of InGaAsP lasers on Si fabricated by wafer bonding, IEEE Photonics Technology Letters, vol.8, issue.2, pp.173-175, 1996. ,
DOI : 10.1109/68.484231
Electrically pumped hybrid AlGaInAs-silicon evanescent laser, Optics Express, vol.14, issue.20, pp.9203-9210, 2006. ,
DOI : 10.1364/OE.14.009203
1310nm silicon evanescent laser, Optics Express, vol.15, issue.18, pp.11466-11471, 2007. ,
DOI : 10.1364/OE.15.011466
Laser emission and photodetection in an InP/InGaAsP layer integrated on and coupled to a Silicon-on-Insulator waveguide circuit, Optics Express, vol.14, issue.18, pp.8154-8159, 2006. ,
DOI : 10.1364/OE.14.008154
1310 nm Evanescent Hybrid III-V/Si Laser Based on DVS-BCB Bonding, Advanced Photonics, pp.3-3, 2011. ,
DOI : 10.1364/IPRSN.2011.IWC3
Continuous wave InGaAsP/InP Fabry-Perot lasers on silicon, 2008 20th International Conference on Indium Phosphide and Related Materials, pp.1-2, 2008. ,
DOI : 10.1109/ICIPRM.2008.4703074
Heterogeneously integrated InP/SOI laser using double tapered single-mode waveguides through adhesive die to wafer bonding, 7th IEEE International Conference on Group IV Photonics, pp.22-24, 2010. ,
DOI : 10.1109/GROUP4.2010.5643441
Electrically driven hybrid Si/III-V Fabry-P??rot lasers based on adiabatic mode transformers, Optics Express, vol.19, issue.11, pp.10317-10325, 2011. ,
DOI : 10.1364/OE.19.010317
Heterogeneous integration of microdisk lasers on silicon strip waveguides for optical interconnects, IEEE Photonics Technology Letters, vol.18, issue.1, pp.223-225, 2006. ,
DOI : 10.1109/LPT.2005.861542
InP on Silicon Electrically Driven Microdisk Lasers for Photonic ICs, 2006 International Conference on Indium Phosphide and Related Materials Conference Proceedings, pp.60-63, 2006. ,
DOI : 10.1109/ICIPRM.2006.1634111
Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit, Optics Express, vol.15, issue.11, pp.6744-6749, 2007. ,
DOI : 10.1364/OE.15.006744
A Thermally Tunable III???V Compound Semiconductor Microdisk Laser Integrated on Silicon-on-Insulator Circuits, IEEE Photonics Technology Letters, vol.22, issue.17, pp.1270-1272, 2010. ,
DOI : 10.1109/LPT.2010.2053526
A Compact SOI-Integrated Multiwavelength Laser Source Based on Cascaded InP Microdisks, IEEE Photonics Technology Letters, vol.20, issue.16, pp.1345-1347, 2008. ,
DOI : 10.1109/LPT.2008.926857
Electrically-pumped compact hybrid silicon microring lasers for optical interconnects, Optics Express, vol.17, issue.22, pp.20355-20364, 2009. ,
DOI : 10.1364/OE.17.020355
Integrated AlGaInAs-silicon evanescent race track laser and photodetector, Optics Express, vol.15, issue.5, pp.2315-2322, 2007. ,
DOI : 10.1364/OE.15.002315
A racetrack mode-locked silicon evanescent laser, Optics Express, vol.16, issue.2, pp.1393-1398, 2008. ,
DOI : 10.1364/OE.16.001393
Injection type GaInAsP/InP/Si DFB lasers directly bonded on SOI substrate, 2008 20th International Conference on Indium Phosphide and Related Materials, pp.1-4, 2008. ,
DOI : 10.1109/ICIPRM.2008.4703013
Injection-Type GaInAsP???InP???Si Distributed-Feedback Laser Directly Bonded on Silicon-on-Insulator Substrate, IEEE Photonics Technology Letters, vol.21, issue.5, pp.283-285, 2009. ,
DOI : 10.1109/LPT.2008.2010780
A distributed feedback silicon evanescent laser, Optics Express, vol.16, issue.7, pp.4413-4419, 2008. ,
DOI : 10.1364/OE.16.004413
A III-V on silicon distributed-feedback laser based on exchange-Bragg coupling, 7th IEEE International Conference on Group IV Photonics, pp.19-21, 2010. ,
DOI : 10.1109/GROUP4.2010.5643440
Hybrid III???V/Si Distributed-Feedback Laser Based on Adhesive Bonding, IEEE Photonics Technology Letters, vol.24, issue.23, pp.2155-2158, 2012. ,
DOI : 10.1109/LPT.2012.2223666
Demonstration of a novel III-V-on-Si distributed feedback laser, Optical Fiber Communication Conference/National Fiber Optic Engineers Conference 2013, pp.1-6, 2013. ,
DOI : 10.1364/OFC.2013.OTh1D.6
1310 nm hybrid InP/InGaAsP on silicon distributed feedback laser with high side-mode suppression ratio, Optics Express, vol.23, issue.7, pp.8489-8497, 2015. ,
DOI : 10.1364/OE.23.008489
URL : https://hal.archives-ouvertes.fr/hal-01489445
Hybrid III???V on Silicon Laterally Coupled Distributed Feedback Laser Operating in the <inline-formula> <tex-math notation="LaTeX">$O$ </tex-math> </inline-formula>-Band, IEEE Photonics Technology Letters, vol.28, issue.18, pp.1920-1923, 2016. ,
DOI : 10.1109/LPT.2016.2576021
A Distributed Bragg Reflector Silicon Evanescent Laser, IEEE Photonics Technology Letters, vol.20, issue.20, pp.1667-1669, 2008. ,
DOI : 10.1109/LPT.2008.2003382
A hybrid silicon sampled grating DBR tunable laser, 2008 5th IEEE International Conference on Group IV Photonics, pp.55-57, 2008. ,
DOI : 10.1109/GROUP4.2008.4638095
10 Gb/s Integrated Tunable Hybrid III-V/Si Laser and Silicon Mach-Zehnder Modulator, European Conference and Exhibition on Optical Communication, 2012. ,
DOI : 10.1364/ECEOC.2012.Tu.4.E.2
Demonstration of a heterogeneously integrated III-V/SOI single wavelength tunable laser, Optics Express, vol.21, issue.3, pp.3784-3792, 2013. ,
DOI : 10.1364/OE.21.003784
New Advances on Heterogeneous Integration of III???V on Silicon, Journal of Lightwave Technology, vol.33, issue.5, pp.976-983, 2015. ,
DOI : 10.1109/JLT.2014.2376174
Heterogeneously Integrated III-V/Si Distributed Bragg Reflector Laser with Adiabatic Coupling, 39th European Conference and Exhibition on Optical Communication (ECOC 2013), pp.2013-2014, 2013. ,
DOI : 10.1049/cp.2013.1502
Highly tunable heterogeneously integrated III-V on silicon sampled-grating distributed Bragg reflector lasers operating in the O-band, Optics Express, vol.24, issue.18, pp.20895-20903, 2016. ,
DOI : 10.1364/OE.24.020895
Guided wave optics, Proceedings of the IEEE, vol.62, issue.8, pp.1044-1060, 1974. ,
DOI : 10.1109/PROC.1974.9569
A Grating-Coupler-Enabled CMOS Photonics Platform, IEEE Journal of Selected Topics in Quantum Electronics, vol.17, issue.3, pp.597-608, 2011. ,
DOI : 10.1109/JSTQE.2010.2086049
High-directionality fiber-chip grating coupler with interleaved trenches and subwavelength index-matching structure, Optics Letters, vol.40, issue.18, pp.4190-4193, 2015. ,
DOI : 10.1364/OL.40.004190
High Efficiency Grating Coupler for Coupling between Single-Mode Fiber and SOI Waveguides, Chinese Phys. Lett, vol.30, issue.1, p.14207, 2013. ,
Grating Couplers for Coupling between Optical Fibers and Nanophotonic Waveguides, Japanese Journal of Applied Physics, vol.45, issue.8A, p.6071, 2006. ,
DOI : 10.1143/JJAP.45.6071
High efficiency Silicon-on-Insulator grating coupler based on a poly-Silicon overlay, Optics Express, vol.14, issue.24, pp.11622-11630, 2006. ,
DOI : 10.1364/OE.14.011622
High efficiency diffractive grating couplers for interfacing a single mode optical fiber with a nanophotonic silicon-on-insulator waveguide circuit, Applied Physics Letters, vol.92, issue.13, p.131101, 2008. ,
DOI : 10.1109/JLT.2006.878060
High-efficiency fiber-to-chip grating couplers realized using an advanced CMOS-compatible Silicon-On-Insulator platform, Optics Express, vol.18, issue.17, pp.18278-18283, 2010. ,
DOI : 10.1364/OE.18.018278
Compact and Highly Efficient Grating Couplers Between Optical Fiber and Nanophotonic Waveguides, Journal of Lightwave Technology, vol.25, issue.1, pp.151-156, 2007. ,
DOI : 10.1109/JLT.2006.888164
Interfacing optical fibers and high refractive index contrast waveguide circuits using diffractive grating couplers, Integrated Optics: Devices, Materials, and Technologies XIII, pp.721808-721808, 2009. ,
DOI : 10.1117/12.808909
High-efficient CMOS-compatible grating couplers with backside metal mirror, 2012 38th European Conference and Exhibition on Optical Communications, pp.1-3, 2012. ,
Method of forming fine conductive lines, patterns and connectors, 1987. ,
Fundamentals of Photonics, p.653, 2007. ,
Fundamentals of Photonics, p.721, 2007. ,
Fundamentals of Photonics, p.315, 2007. ,
Supermode Si/III-V hybrid lasers, optical amplifiers and modulators: A proposal and analysis, Optics Express, vol.15, issue.15, pp.9147-9151, 2007. ,
DOI : 10.1364/OE.15.009147
URL : https://authors.library.caltech.edu/8394/1/YARoe07.pdf
Coupled-mode theory for guided-wave optics, IEEE Journal of Quantum Electronics, vol.9, issue.9, pp.919-933, 1973. ,
DOI : 10.1109/JQE.1973.1077767
Adiabaticity criterion and the shortest adiabatic mode transformer in a coupled-waveguide system, Optics Letters, vol.34, issue.3, pp.280-282, 2009. ,
DOI : 10.1364/OL.34.000280
Supermode Si/III?V lasers and circular Bragg lasers, " phd, California Institute of Technology, 2010. ,
Periodic structures for integrated optics, static1.squarespace.com/static+LETI+-+ChristopheKOPP.pdf.%E2%80%9D, C. Kopp, III-V On Silicon Integration Technology, pp.233-253, 1977. ,
DOI : 10.1109/JQE.1977.1069323
Thermal Management of Hybrid Silicon Ring Lasers for High Temperature Operation, IEEE Journal of Selected Topics in Quantum Electronics, vol.21, issue.6, pp.385-391, 2015. ,
DOI : 10.1109/JSTQE.2015.2428057
Realization of back-side heterogeneous hybrid III-V/Si DBR lasers for silicon photonics, pp.97500-97500, 2016. ,
First demonstration of a backside integrated heterogeneous hybrid III-V/Si DBR lasers for Si-photonics applications, 2016 IEEE International Electron Devices Meeting (IEDM), p.2016 ,
Pour résoudre ce problème, l'approche la plus couramment proposée consiste à coller un empilement InP sur une plaque SOI afin de fabriquer un laser hybride III Cependant, aucune des démonstrations n'a été réalisée avec un empilement d'interconnexions métalliques BEOL (Back-End Of Line) standard, empêchant ainsi une intégration électronique-photonique appropriée. Pour résoudre le problème topographique posé par cet ajout de couches, un nouveau schéma d'intégration, appelé intégration Back- Side, a été développé et est présenté dans ce document. Tout d'abord, le contexte de cette étude, un état de l'art ainsi que la présentation du Back-Side est abordé. La nouveauté apportée par cette intégration, à savoir le collage du III-V sur la face arrière du SOI après la structuration de celui-ci, y est alors détaillé, Bien que ces plateformes diffèrent à bien des égards, elles manquent toutes d'une source de lumière intégrée Le bon fonctionnement d'un élément essentiel à la puce photonique, le réseau de couplage, est ensuite abordé à travers des simulations, sa fabrication et des caractérisations optiques. Nous avons prouvé que, sous certaines conditions, ce dispositif possède les mêmes performances mesurées en Back-Side qu'en Front-Side ,
Afin d'augmenter le confinement du mode dans le MQWs (Multi Quantum Wells) et donc d'assurer un gain optique élevé, le mode optique est progressivement transféré entre le guide III-V et le guide silicium du laser hybride par des épanouisseurs adiabatiques, structurés dans le SOI de part et d'autre de la zone de gain, pour être enfin réfléchi par les miroirs DBR dans le silicium. Enfin, son processus de fabrication est explicité avant que ses caractérisations opto-électroniques ne soient finalement présentées. Les lasers à pompage électrique ont été testés dans des conditions de courant continu et la lumière générée a été collectée à travers un réseau de couplage par une fibre optique externe multimode. Les pertes de couplage ont été mesurées supérieures à 10 dB ,
La tension de seuil est de 1,45 V. Les spectres lasers reflètent un fonctionnement mono-fréquence, pour différents courants d'injection, avec une longueur d'onde centrale correspondant à la longueur d'onde de Bragg des miroirs. Un SMSR (Side Mode Suppression Ratio) de plus de 35 dB a été mesuré, ce qui prouve la bonne pureté spectrale de ce laser ,