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3D Discrete Dislocation Dynamics simulations of the role of interfaces in confined materials - : application to electronic devices such as LEDs

Abstract : Plastic deformation of classical crystalline materials is mostly dominated by dislocations and their mutual interactions. In nanocrystalline (nc) metals, different grain boundary mechanisms may exist in addition to the dislocation-based mechanisms. The dependency on, among other, the grain shape, grain orientation, initial dislocation density, grain boundary structure and external conditions will promote one or two deformation mechanisms over others. These dominant mechanisms dictate the overall response of nc metal. The influence of the microstructural features needs to be better understood individually and collectively. In the scope of the thesis, 3D discrete dislocation dynamics (DD) simulations were performed on three micron-sized single grains of same volume but differing in aspect ratios. Localization of plastic deformation was observed to decrease with increasing grain aspect ratio. Due to the enhanced cross-slip mechanism, grains with higher aspectratio exhibit a softer behavior. The anisotropic plastic response of elongated grains was quantified interms of the magnitude of back-stress on each slip system. Further, a polycrystalline version of dislocation dynamics code coupled with a finite elements was used, to study the mechanical behavior of free-standing palladium thin films with columnar grains. The initial dislocation density considered in the simulations is close to the one measured experimentally. DD simulations of a polycrystal with 12 equally sized hexagonal grains properly reproduce the strain hardening behavior. The increase in strength observed with decreasing film thickness was captured using a heterogenous grain size distribution of the polycrystal. The key element is that the probability of smaller grains with no inital dislocations is increasingwith decreasing thickness of the film. Difference in the back-stress contributions arising from the grain size distribution in the film was also quantified. Finally, by adapting Read’s model, the influence of a static, electrically-charged dislocation on electrical properties in semiconductors was studied.
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  • HAL Id : tel-01688611, version 1



Hareesh Tummala. 3D Discrete Dislocation Dynamics simulations of the role of interfaces in confined materials - : application to electronic devices such as LEDs. Materials. Université catholique de Louvain (1970-..), 2016. English. ⟨NNT : 2016GREAI096⟩. ⟨tel-01688611⟩



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