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Détermination simultanée de la mise au point et de la dose d'un équipement de micro-lithographie optique

Abstract : Following the ITRS roadmap, the critical dimension of the circuits are continuouslynarrowing. Optical Lithography still remains the cheapest way forintegrated circuits mass production. If the resists properties and the exposure wavelengthreduction had an important contribution to this result, the lens numericalaperture increase had a decisive impact. The numerical aperture is currently reaching1,30 thanks to the usage of water as immersion fluid between the lens andthe wafer. Future lens are targeting in a near future a 1,70 numerical aperture withimmersion fluids at higher refractive index. A direct consequence of these wider numericalaperture’s is the reduction of the depth of focus to few tens of nanometers,reducing the process windows and then the integrated circuits manufacturability. Inaddition the pure numerical aperture effect on focus, off axis illumination is leadingto amplify the reticle critical dimension variations, and the intrafield focus controlbecomes more and more crucial.The last scanner generation provides some tools to adjust the intrafield energy.As the two effects appear to compensate each of them critical dimension variation,it becomes very important to be able to dissociate the effect of one from the otherin order to select the most efficient mean to get the greater process windows. Moreover, the average value compensations must feed accurately the Run to Run feedback loop for the next exposed wafers.The purpose of this thesis is to find a way to un-correlate the various parametersaffecting the critical dimension uniformity. Some researchers tried to design specificfeatures whose shape modifications due to focus offset could be detected as an overlayerror measured by the appropriate tool, but the limitations seem to be actuallyreached. New tools, as scatterometers, could provide a more precise information.The desire output of this thesis would be to provide a methodology to allow an inline intrafield focus follow up for the future technologies at 20nm half pitch
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Nicolas Spaziani. Détermination simultanée de la mise au point et de la dose d'un équipement de micro-lithographie optique. Micro et nanotechnologies/Microélectronique. Université de Grenoble, 2012. Français. ⟨NNT : 2012GRENT125⟩. ⟨tel-01688605⟩

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