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Caractérisation et modélisation de la fiabilité des transistors MOS en Radio Fréquence

Abstract : Products using nowadays silicon technology are generally targeting aggressive specificationsand push the developers to determine the best compromise between performance and reliability.Main front-end degradation mechanisms are historically studied and modeled under static stressconditions and focus on the static MOS transistor parameters.With the development of product targeting high performances in the radio frequency (RF)domain, the reliability is becoming a first order concern. Thus an extension of the actual staticreliability models must be done to quantify the aging of key RF parameters under static andRF stress. In this context, this work focuses on the extension of the MOS transistor reliabilityregarding the study of RF parameters and also the application of RF stress.After describing the MOS transistor properties, the reliability aspect is introduced and theemphasis is put on the different degradation mechanisms and their associated models. Thisallows the development of an experimental setup and the required methodology to investigatethe device aging in the RF domain and to extend actual static models.
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Submitted on : Friday, January 19, 2018 - 2:21:06 PM
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  • HAL Id : tel-01688483, version 1



Laurent Negre. Caractérisation et modélisation de la fiabilité des transistors MOS en Radio Fréquence. Micro et nanotechnologies/Microélectronique. Université de Grenoble, 2011. Français. ⟨NNT : 2011GRENT126⟩. ⟨tel-01688483⟩



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