, III-Vs on Si for photonic applications: A monolithic approach Wafer bonding and heterogeneous integration: III-V/silicon photonics, Symposium on VLSI Technology (VLSI Technology) 14th European Conference on Integrated Optics, pp.172-1731551, 2008.
, High-quality 150 mm InP-to-Silicon epitaxial transfer for silicon photonic integrated circuits, Electrochemical and Solid-State Letters, vol.1215, issue.4, pp.101-104, 2009.
, Hybrid silicon evanescent devices Injection-type, Materials Today, vol.10, pp.28-35, 2007.
, Zur quantentheorie der strahlung" (On the quantum theory of radiation)
, [18] M. Razeghi. High-power laser diodes based on InGaAsP alloys, Nature, vol.18, issue.6482, pp.121-128, 1917.
, Laser emission and photodetection in an InP/InGaAsP layer integrated on and coupled to a Silicon-on-Insulator waveguide circuit, Optics Express, vol.14, issue.18, pp.8154-8159, 1994.
DOI : 10.1364/OE.14.008154
, Electrically pumped room-temperature pulsed InGaAsP-Si hybrid lasers based on metal bonding, BIBLIOGRAPHIC REFERENCES [21] Xiankai Sun, p.64211, 2009.
, Low-Loss InGaAsP/InP Surface Ridge Waveguides for Photonic Integrated Circuits, IEEE Photonics Technology Letters, vol.28, issue.13, pp.1345-1347, 2009.
DOI : 10.1109/LPT.2016.2543749
, Very low threshold current density, 2016.
, AlGaInAs graded index separated confinement heterostructure strained quantum well laser diodes grown by organometallic chemical vapor deposition, Applied Physics Letters, vol.5924, issue.20, pp.2486-2488, 1991.
, Integrated AlGaInAs-silicon evanescent racetrack laser and photodetector
DOI : 10.1117/12.767564
, Laser conditions in semiconductors, 27] V. Zayets. Si wire waveguides, pp.699-703, 1550.
, Mode conversion in tapered submicron silicon ridge optical waveguides, Mohrle, H. Duser, and H. Venghaus. Threshold-current analysis of, pp.13425-13439, 2012.
DOI : 10.1364/OE.20.013425
, The effect of intervalence band absorption on the thermal behavior of InGaAsP lasers, IEEE Journal of Quantum Electronics, vol.19, issue.6, pp.947-952, 1983.
DOI : 10.1109/JQE.1983.1071954
, Passive optical GaInAsP/InP waveguides [34] F. Fiedler and A. Schlachetzki. Special issue-optoelectronics optical parameters of InP-based waveguides Joris Van Campenhout. Thin-Film Microlasers for the Integration of Electronic and Photonic Integrated Circuits Optical constants of transition metals, Electronics Letters Solid-State Electronics, vol.1935, issue.301, pp.81-8273, 1983.
, and W in the infrared and far infrared, Optical properties of the metals Al, pp.5056-50701099, 1974.
, Handbook of Optical Constants of Solids Annealed AuGe based ohmic contacts on InP with ion milling prior to metallization, Journal of Electronic Materials, vol.19, issue.2, pp.1-3, 1990.
, As y P 1-y /InP, Calais, J.R. Martin, and P. Clechet. Low resistance ohmic contacts, 1986.
, Ohmic contact formation in palladium-based metallizations to n-Type InP, InP by palladium electroless bath deposition Sysak, M. Swaidan, and J. Bowers. Silicon fab-compatible contacts to n-InP and, pp.835953-962, 1990.
DOI : 10.1557/PROC-260-531
, PtGe ohmic contact to n-type InP, Applied Physics Letters Journal of Applied Physics, vol.10044, issue.1, p.6108, 1995.
, InP nonalloyed ohmic contacts formed by rapid thermal processing, Journal of Applied Physics, vol.67, issue.8, p.3872, 1990.
, Nonalloyed high temperature ohmic contacts on Te-doped InP Sinterless contacts to shallow junction InP solar cells Compound semiconductor contact metallurgy, Fourth International Conference on Indium Phosphide and Related Materials, pp.11231845-318, 1990.
DOI : 10.1063/1.123688
, ???type GaAs, Journal of Applied Physics, vol.54, issue.2, pp.289-312582, 1987.
DOI : 10.1557/PROC-54-415
, Microstructural investigation of large area and device size AuGeNi contacts on InP, Ohmic contacts formation on n-inp, pp.361-367507, 1983.
, Recent developments in ohmic contacts for III-V compound semiconductors Making III-V contact with silicon substrates, Journal of Applied Physics Journal of Vacuum Science & Technology B Semicon. Today Compounds and Advanced Si, vol.79, issue.6, pp.7058-70612113, 1992.
, 53 Ga 0.47 As low-resistance nonalloyed ohmic contact formed by rapid thermal processing Alternative (Pd,Ti,Au) contacts to (Pt,Ti,Au) contacts for In 0.53 Ga 0.47 As Thermally stable tungsten ohmic contact to p-InGaAs and effective barrier height measurement by using the I-V-T method, Applied Physics Letters Journal of Applied Physics Journalkorean physical society, vol.54, issue.38, pp.23062977236-241, 1989.
, Au and non-Au based rare earth metal-silicide ohmic contacts to p-InGaAs. Solid-State Electronics Ohmic contact study for quantum effect transistors and heterojunction bipolar transistors with InGaAs contact layers Dopants and Defects in Semiconductors Orobtchouk. Mode density reduction and coupling in microdisk lasers processed on a 200-mm cmos pilot line, 2011. [64] D. Marris-Morini L. Vivien R. Orobtchouk P. Rojo-Romeo C. Seassal J. M. Fedeli, L. Di Cioccio and F.Mandorlo. Development of silicon photonics devices usingmicroelectronic tools for the integration on top of a cmoswafer, pp.265229-322354, 1992.
, Cmos compatible contacts and etching for inp-on-silicon active devices Temperature dependence of the energy gap in semiconductors Empirical expressions for the alloy composition and temperature dependence of the band gap and intrinsic carrier density in Ga x In 1-x As Temperature dependence of threshold of InGaAsP/InP doubleheterostructure lasers and auger recombination Advanced analysis of high-temperature failure mechanisms in telecom lasers, 6th IEEE International Conference on Group IV Photonics, pp.149-154827, 1967.
, Towards contact integration for III???V/Silicon heterogeneous photonics devices, 2016 IEEE International Interconnect Technology Conference / Advanced Metallization Conference (IITC/AMC), pp.70-81, 2001.
DOI : 10.1109/IITC-AMC.2016.7507684
URL : https://hal.archives-ouvertes.fr/cea-01615818
, Diode lasers and photonic integrated circuits Wiley series in microwave and optical engineering Introduction to Physics and Simulation Refractive index of Ga 1-x In x As prepared by vapor-phase epitaxy Refractive index of In 1-x Ga x As y P 1-y layers and InP in the transparent wavelength region Refractive index of InP Temperature dependence of the energy gap in semiconductors Empirical expressions for the alloy composition and temperature dependence of the band gap and intrinsic carrier density in Ga x In 1-x As Advanced analysis of high-temperature failure mechanisms in telecom lasers, J. Piprek. Semiconductor Optoelectronic Devices Japanese Journal of Applied Physics Journal of Applied Physics Journal of Applied Physics Physica Journal of Applied Physics Applied Physics Letters, vol.2710, issue.386, pp.1804-181118133376, 1965.
, Optical constants of silica glass from extreme ultraviolet to far infrared at near room temperature Thermal conductivity of sputtered oxide films, Applied Optics Physical Review B: Condensed Matter and Materials Physics, vol.46, issue.52, pp.8118-8133253, 1995.
, Mechanical and Physical Properties of Engineering Alumina Ceramics, 1996.
, Spectroscopic Ellipsometry: Principles and applicationS, 2007.
DOI : 10.1002/9780470060193
, Horiba Jobin Yvon TN11: Tauc-Lorentz dispertion formula Horiba technical note A novel characterization method for thermal thin-film properties applied to PECVD silicon nitride Process-dependent thin-film thermal conductivities for thermal cmos mems Thermal characterization of surfacemicromachined silicon nitride membranes for thermal infrared detectors, Sensors26] P. Eriksson, J. Y. Andersson, and G. Stemme, pp.22-27, 1997.
, Determining the thin-film thermal conductivity of low temperature PECVD silicon nitride, Proc. Eurosensors XX, 2006.
, Extending the 3Ï? method for thin-film analysis to high frequencies, Thermal conductivity of thin SiO2 films, pp.696050-6055197, 1992.
, Thermal conductivity of sputtered and evaporated SiO2 and TiO2 optical coatings, Applied Physics Letters, vol.65, issue.3, pp.309-31131, 1994.
, Thermal conductivity of SiO2 films by scanning thermal microscopy Thermal conductivity measurement and interface thermal resistance estimation using SiO2 thin film Thermal conduction in metallized silicon dioxide layers on silicon Thermal conductivity measurements of thin silicon dioxide films in integrated circuits, Microscale Thermophysical Engineering, pp.85-109203, 1994.
, SiO2 thin films due to surface phonon-polaritons Measurement of thermal conductivity of silicon dioxide thin films using a 3w method, Thermal Investigations of ICs and Systems (THERMINIC), 2015 21st International Workshop on Ultra-low thermal conductivity in W/Al2O3 nanolaminates, pp.1-59772, 2002.
, Analysis of fluorocarbon deposition during SiO 2 etching Near-surface damage and contamination after CF 4 /H 2 reactive ion etching of Si Understanding of via etch-induced polymer formation and its removal Deep InP gratings for opto-electronic devices etched by Cl 2 /CH 4 /Ar inductively coupled plasma Reactive ion etching of PECVD silicon nitride in SF 6 plasma Optimized cleaning method for producing device quality inp(100) surfaces, Materials Sciences and Applications, pp.628-63824631441, 1985.
, US Patent 6,033,996. [50) native oxide removal by liquid and gas phase hf/h2o chemistries, Process for removing etching residues 11th {SEMATECH} Surface Preparation and Cleaning Conference, pp.1656-1660, 2000.
, Wet chemical etching of InP for cleaning applications: I. An oxide formation/oxide dissolution model Wet chemical etching of InP for cleaning applications: II. Oxide removal Study of InP surfaces after wet chemical treatments, Chemically cleaned InP(100) surfaces in aqueous HF solutions. Materials Science and Engineering, pp.133-138, 2000.
, HCl solutions for advanced CMOS processing Cleaning of InGaAs and InP layers for Nanoelectronics and Photonics contact technology applications, Nanoscale etching of In 0.53 Ga 0.47 As in H 2 O 2, pp.179-184251, 2014.
, In situ cleaning of InGaAs surfaces prior to low contact resistance metallization, 15th International Workshop on Junction Technology (IWJT), pp.54-5791, 2015.
, Low energy Ar + ion bombardment induced modification of surface atomic bond lengths on InP(100) wafer Applied Physics Letters Damage of InP (110) induced by low energy Ar + and He + bombardment, Effect of Ar + , He + , and S + irradiation on n-InP single crystal63] M. F. O'Keefe, R. E. Miles, and M. J. Howes. Nickel in ohmic contacts to indium phosphide, pp.86-901957, 1993.
, Microstructural investigation of large area and device size AuGeNi contacts on InP, Ohmic contacts formation on n-inp, pp.361-367507, 1983.
, Chemical mechanical polishing of copper for multilevel metallization Electromigration in layered al lines studied by insitu ultra-high voltage electron microscopy Advanced multilayer metallization schemes with copper as interconnection metal, Jakkaraju, and N. Breil. Fluorine-free tungsten films as low resistance liners for tungsten fill applications, pp.7058-7061192, 1993.
, CHAPTER 3 -BIBLIOGRAPHIC REFERENCES CHAPTER Foatio of siliide thi fils solid state eaatio Silicide thin films and their applications in microelectronics Silicides and ohmic contacts [5] F.M. d'Heuule iliide itefaaes i silio tehholog Semiconducting Silicides Nisi salicide technology for scaled CMOS Silicide Technology for Integrated Circuits. The Institution of Electrical Engineers Interfacial reaction and electrical properties in the sputter-deposited Al/Ti ohmic contact to n-InP Phase formation in Ni/InP contacts A self-aligned Ni-InGaAs contact technology for InGaAs channel n-MOSFETs, IEEE International Interconnect Technology Conference / Advanced Metallization Conference A new damascene structure for submicrometer interconnect wiring. IEEE Electron Device LettersH511, 2012. [12] P. Shekhter, S. Mehari, D. Ritter, and M. Eizenberg. Epitaxial NiInGaAs formed by solid state reaction on In 0.53 Ga 0.47 As: Structural and chemical study Measurement of the schottky barrier height between Ni-InGaAs alloy and In 0.53 Ga 0.47 As. Applied Physics Letters, pp.108-110129, 1993.
, The structural and electrical properties of low-resistance Ni contacts to InP Ni-InP reaction: Formation of amorphous and crystalline ternary phases, Koide, and M. Murakami. Nearnoble transition-metal-based ohmic contacts to p-InP: Comparison of Ni and Pd as a base metal, pp.3346-33542891346, 1987.
, Sinterless contacts to shallow junction InP solar cells. Fourth International Conference on Indium Phosphide and Related Materials, 1992 Interaction of nickel with lnP as a fonction of annealing time and temperature. Semiconductor -based heterostructures: Interfacila structure and stability, Wang, and P. Jian. Low temperature reactions between Nickel thin films and, pp.7792-7796, 1986.
DOI : 10.1109/iciprm.1992.235689
URL : http://hdl.handle.net/2060/19920015559
, Experimental Methods of Phase Diagram Determination, p.151, 1994.
, Photoelectron spectroscopy study of band alignment at interface between Ni-InGaAs and In 0.53 Ga 0.47 As, MOSFETs with self-aligned Ni-InGaAs contacts, pp.82-85012105, 2011.
, CMOS compatible self-aligned S/D regions for implantfree InGaAs MOSFETs. Solid-State Electronics Size and orientation effects on the kinetics and structure of nickelide contacts to InGaAs fin structures, Nano Letters, vol.74, issue.6, pp.71-76, 2012.
, Crystal structure and epitaxial relationship of Ni 4 InGaAs 2 films formed on InGaAs by annealing Reaction of Ni film with In 0.53 Ga 0.47 As: Phase formation and texture Modelizatio of the siultaaeous goth of thhee iteediate phase Materials science forum The Corrosion and Oxidation of Metals: Scientific Principles and Practical Applications General relationship for the thermal oxidation of silicon Differential scanning calorimetry analysis of the linear parabolic growth of nanometric Ni silicide thin films on a si substrate Influence of the interfacial oxide on titanium silicide formation by rapid thermal annealing The influence of impurities on cobalt silicide formation, 36] C. Dehm, B. Raum, I. Kasko, and H. Ryssel. Influence of impurities on ion beam induced TiSi, pp.01220213530459-703770, 1960.
, Reaction of titanium with silicon nitride under rapid thermal annealing Insitu investigation of tin formation on top of TiSi 2 The diffraction of short electromagnetic waves by a crystal Elements Of X Ray Diffraction X-Ray Diffraction: A Practical Approach, Physics Research Section B: Beam Interactions with Materials and Atoms Proceedings of the Cambridge Philosophical Society43] Y Waseda, E Matsubara, and K Shinoda. X-Ray Diffraction Crystallography: Introduction, Examples and Solved Problems44] A. Appelbaum, M. Robbins, and F. Schrey. Sputtered Ni-P as an ohmic contact to n-InP, pp.759-7631236, 1956.
, A comparative study of phase stability and film morphology in thin-film M/GaAs systems, IEEE Trans. on Electron Devices, issue.5, p.34, 1987.
, Low energy Ar + ion bombardment induced modification of surface atomic bond lengths on InP(100) wafer Damage of InP (110) induced by low energy Ar + and He + bombardment Effect of Ar + , He + , and S + irradiation on n-InP single crystal AES, EELS and TRIM simulation method study of InP(100) subjected to Ar + , He + and H + ions bombardment Cleaning of InGaAs and InP layers for Nanoelectronics and Photonics contact technology applications Study of InP surfaces after wet chemical treatments, Phase equilibria and ternary phase formation in the In-Ni-P system, pp.2070955-9601957, 1987.
, Réactioo à l'état solide d'u fil ice de NiCoo avec IIGaAs: aalyses microstructurales Monte carlo calculation of backscattering factor for Ni-C multilayer system Growth of amorphous SiC film on Si by means of ion beam induced mixing Thin TaC layer produced by ion mixing, Selective wet etching process for ni-InGaAs contact formation in InGaAs n-MOSFETs with selfaligned source and drain situ cleaning of InGaAs surfaces prior to low contact resistance metallization. Microelectronic Engineering, pp.41155312367-3723917, 2008.
, Formation of Ni 3 InGaAs phase in Ni/InGaAs contact at low temperature Consistent indexing of a (set of) single crystal SAED pattern(s) with the Process Diffraction program Metallurgical study of Ni/GaAs contacts. I. Experimental determination of the solid portion of the Ni-Ga-As ternary-phase diagram, 62] A. Guivarch, R. Guerin, J. Caulet, A. Poudoulec, and J. Fontenille. Metallurgical study of, pp.237-2492122, 1989.
, Interfacial reactions of Ni thin films on (111) and (001) GaAs Study of chemical reactions at metal-InP interfaces formed by sputter deposition of Pt and Ti Interfacial reactions between Ti thin films and InP, Journal of Applied Physics IEEE Materials Science and Engineering: B, vol.66, issue.412, pp.2129-627, 1989.
, Chemical reactions and temperature-dependent interface formation of Ti Surface and Interface Analysis, Reactive versus nonreactive cases-situ rapid thermal nitridation of collimated titanium by physical vapor deposition as a blanket tungsten barrier, pp.1033-1038315, 1987.
, Electrical and Physical Characterization of Tin Diffusion Barrier for Sub-Micron Contact Structure, Japanese Journal of Applied Physics MRS Proceedings, pp.466-468, 1994.
DOI : 10.1016/0040-6090(83)90006-8
, Physique des semiconducteurs et des composants électroniques, 6eme édition Physics of Semiconductor Devices Metal-Semiconductor contacts, second edition Henisch. Semiconductor Contacts. An approach to ideas and Models, Impact of the dielectric stack on the contact resistivity 4.7 Conclusion CHAPTER Halbleitertheorie der sperrschicht Mott. Note on the contact between a metal and an insulator or semi-conductor, pp.26843-843, 1938.
, Surface states and rectification at a metal semi-conductor contact Metal-induced surface states during schottky-barrier formation on Si Surface states and barrier height of metal-semiconductor systems Compound semiconductor device physics, Proceedings of the Cambridge Philosophical Society, pp.568717-7271471, 1938.
, Beryllium ion implantation into GaAs and pseudomorphic AlGaAs/InGaAs/GaAs heterostructure Annealing and activation of silicon implanted in semiinsulating InP substrates, Journal of Electronic Materials Materials Science in Semiconductor Processing, vol.2613, issue.64, pp.16-20215, 1997.
, Silicon and selenium implantation and activation 208 CHAPTER 4 -BIBLIOGRAPHIC REFERENCES in In 0.53 Ga 0.47 As under low thermal budget conditions, Laviron, and M.-N. Semeria, pp.155-158, 2011.
, Thin Solid Films Fabrication of suuioetee MO " FET's usig gas ieesio lasee dopig GILD, Gas immersion laser doping (GILD) for ultra-shallow junction formation, pp.453-454106, 1986.
, Superconductivity in doped cubic silicon Contact resistance on diffused resistors, IEEE International Solid-State Circuits, pp.465-468, 2006.
, Current crowding on metal contacts to planar devices Contact resistance and contact resistivity Contact resistance and methods for its determination, Conference. Digest of Technical Papers, pp.160-1611022, 1969.
, Models for contacts to planar devices. Solid-State Electronics Research and investigation of inverse epitaxial UHF power transistors. Research and investigation of inverse epitaxial UHF Power Transistors, Air Force Atomic Laboratory Obtaining the specific contact resistance from transmission line model measurements. Electron Device Letters Analysis of certain methods for determining contact resistivity, IEEE, vol.15, issue.35, pp.361-379145, 1964.
, Low-temperature redistribution of As in Si during Pd 2 Si formation, CHAPTER Applied Physics Letters, vol.20927, issue.3812, pp.1015-1017, 1981.
, Low-temperature redistribution of As in Si during Ni silicide formation
, Dopant redistribution during titanium silicide formation A tri-layer transmission line model applied to alloyed ohmic contacts Understanding the sheet resistance parameter of alloyed ohmic contacts using a transmission line model. Solid-State Electronics Using TLM principles to determine MOSFET contact and parasitic resistance Measurement of low Schottky barrier heights applied to metallic source/drain metal/oxide semiconductor field effect transistors Interaction of nickel with lnP as a fonction of annealing time and temperature. Semiconductor -based heterostructures: Interfacila structure and stability The structural and electrical properties of low-resistance Ni contacts to InP, 35] A. Appelbaum, M. Robbins, and F. Schrey. Sputtered Ni-P as an ohmic contact to n-InP, pp.2689-26931115, 1986.
, Low contact resistivity ohmic contacts to 6H-silicon carbide. International Electron Devices Meeting, IEDM '93 Reees's iulaa ttaasissio lie model and its scope of application to extract specific contact resistance. Solid-State Electronics Determination of ohmic contacts to n-type 6H-and polycrystalline 3C-SiC using circular transmission line structures A new route to zero-barrier metal source/drain MOSFETs Multiring circular transmission line model for ultralow contact resistivity extraction, IEEE Trans. on Electron Devices Photoelectron spectroscopy study of band alignment at interface between Ni-InGaAs and In 0.53 Ga 0.47 As. Applied Physics Letters, pp.34487-490843, 1980.
, A self-aligned Ni-InGaAs contact technology for InGaAs channel n-MOSFETs Hydrogen neutralization of dopant in p-type In 0.53 Ga 0.47 As Electrical isolation of n-and p-In 0.53 Ga 0.47 As epilayers using ion irradiation In-plane uniaxial stress effects of AlGaAs/GaAs modulation doped heterostructures characterized by the transmission line method Strain effects associated with SiO layers evaporated onto GaAs, H511, 2012. [45]49] P. A. Kirkby, P. R. Selway, and L. D. Westbrook. Photoelastic waveguides and their effect on stripe-geometry GaAs/Ga 1-x Al x As lasers, pp.60421-4256616, 1979.
, Effects of hydrostatic pressure on dopant diffusion in silicon Stress effects on defects and dopant diffusion in Si Dopant diffusion under pressure and stress, Proceedings of the IEEE International Conference on Simulation of Semiconductor Processes and Devices SISPAD 2003 Theoretical and experimental study of the longitudinal uniaxial stress dependence of I/V characteristics, pp.1232-12403664, 1988.
, Mos 2 /MX 2 heterobilayers: bandgap engineering via tensile strain or external electrical field Richardson constant and tunneling effective mass for thermionic and thermionic-field emission in schottky barrier diodes, Al x Ga 1-x As-GaAs heterojunction barriers Chaag. Piezoeletti effeets i GaAs FET's aad thei ole i orientation-dependent device characteristics. IEEE Transactions on Electron Devices, pp.6360-63672879, 1969.
, peettosopi ellipsoettt haaateeizatio of thi fils used i the food paakagig idusttt, American Laboratory TN: Tauu-Loeetz dispeetio foula, Horiba technical note Spectroscopic Ellipsometry: Principles and applicationS The geeeal ppopeeties of " i, Ge, " iGe The aad gap of ulttathi aaophous aad ell, APPENDIX -Bibliographic references Eleettoi sttuutuue aad aadgap of ?-Al 2 O 3 opoud usig BJ eehage potetial [9] S. Sze, Physics of Semiconductor Devices, pp.22-27, 2006.
, ze, Cueet ttaaspoot i etal-seeioduto aaaiees, Solid-State Electronics Noalized theeioi-field (T-F) emission in metalsemiconductor (schottk aaaiees, 15] F. Padovani and R. " ttatto, Field aad theeioi-field eeissio i sshottk aaiees, pp.843-843, 1938.
, Phase formation in the Ni/n???InP contacts for heterogeneous III/V-silicon photonic integration, Microelectronic Engineering, vol.156, 2015.
DOI : 10.1016/j.mee.2015.12.008
URL : https://hal.archives-ouvertes.fr/hal-01435133
, In situ cleaning of InGaAs surfaces prior to low contact resistance metallization, Microelectronic Engineering, 2015.
, Cleaning of InGaAs and InP Layers for Nanoelectronics and Photonics Contact Technology Applications, ECS Transactions, vol.69, issue.8, pp.69251-259, 2015.
DOI : 10.1149/06908.0251ecst
URL : https://hal.archives-ouvertes.fr/cea-01615547
, Formation of Ni 3 InGaAs phase in Ni/InGaAs contact at low temperature, Applied Physics Letters, p.131902, 2016.
URL : https://hal.archives-ouvertes.fr/hal-01435222
, USA Metallurgical Studies of Integrable Ni-based Contacts For Their Use in III-V/Si Heterogeneous Photonics Devices, Silicon Nanoelectronics Workshop (SNW), 2016.
, PATENTS Intégration de contacts sur III-V compatibles avec une filière silicium