B. Schottky, Modélisation Concernant la modélisation, deux branches rectifiantes sont efficaces à 195 ? C, 170 ? C et

?. C. , À 120 ? C et 95 ? C, une troisième branche s'avère nécessaire à la modélisation

?. Une-quatrième-branche-vient-compléter-le-modèle, Enfin, une cinquième branche est à adjoindre pour ajuster le modèle en dessous de-30 ? C. À titre d'illustration, la décomposition de la caractéristique IV à 20 ? C est donnée en échelles linéaire et semi-logarithmique en figure

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M. Berthou, B. Asllani, P. Brosselard, and P. Godignon, Cryogenic to High Temperature Exploration of 4H-SiC W-SBD, Materials Science Forum, vol.821, pp.583-587, 2014.
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B. Niu, S. Denis, P. Berthou, M. Tournier, D. Brosselard et al., Annexe En annexe de ce document nous pourrons trouver les cartographies réalisées dans le cadre du projet FilSiC des lots 4, 6 et 7. Elles concernent le coefficient d'idéalité, la hauteur de barrière et la tenue en tension, Conférences Nationales avec Actes et Comité de Lecture Asllani, 2014.

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F. Administratif,

T. Soutenance,

T. Prénoms-:-besar and . Nature, Doctorat Numéro, pp.2016-147

. Ecole-doctorale-:-Électronique, A. Électrotechnique, . De-lyon, and . Spécialité, Effectivement, la tenue en tension élevée, la faible résistivité, ainsi que l'indépendance de la température du courant de recouvrement rendent cette diode idéale pour les convertisseurs de puissance DC/DC. Cependant, face à l'abondance des composants Si sur le marché, la diode Schottky rencontre une certaine réticence. Malgré les nombreuses démonstrations de systèmes électroniques de puissance réalisés, la fiabilité de cette technologie n'arrive pas à convaincre. Cette étude porte sur la caractérisation en régime statique sur une large gamme de températures et l'évaluation de la fiabilité en surcharge des diodes Schottky et JBS SiC-4H. La caractérisation en température a permis de proposer des modèles de la caractéristique directe et inverse sur une gamme étendue de températures, Génie Électrique RESUME : La diode Schottky SiC est un composant qui peut potentiellement remplacer la diode PiN Si dans les applications de puissance

M. , Caractérisation électrique en Température, Modélisation, Modèle en direct Schottky, Modèle en inverse Schottky, Fiabilité, Tests en Surcharge

, Laboratoire (s) de recherche : AMPÈRE

I. Grenoble, M. Tournier, D. , M. De-conférences, M. Insa-de-lyon et al., Maître de Conférences, Université de Rouen M. Berthou M., Ingénieur, CALY-Technologies