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Caractérisation et modélisation de diodes Schottky et JBS SiC-4H pour des applications haute tension

Abstract : The SiC Schottky diode can potentially replace the PiN diode in power appli- cations. As a matter of fact, high blocking voltage, low resistivity as well as temperature independence of the reverse recovery current make this diode ideal for DC/DC power converters. Nevertheless, Schottky diodes meet some reluc- tance before the abundance of PiN Si diodes. Despite the numerous demons- trations of power electronics systems, there are still some reliability aspects to improve. This study focuses on static characteristic in a large temperature range and reliability assessment of repetitive surge test of Schottky and JBS diodes. The measurements of forward and reverse characteristics yielded new models in a wide temperature range. Repetitive surge tests enabled us to com- pare the reliability of experimental and commercial diodes in order to prove the maturity of this technology.
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Besar Asllani. Caractérisation et modélisation de diodes Schottky et JBS SiC-4H pour des applications haute tension. Electronique. Université de Lyon, 2016. Français. ⟨NNT : 2016LYSEI147⟩. ⟨tel-01673489v3⟩

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