P. A. Agyakwa, M. R. Corfield, L. Yang, J. F. Li, V. M. Marques et al., Microstructural evolution of ultrasonically bonded high purity Al wire during extended range thermal cycling, In: Microelectronics Reliability, vol.51, pp.406-415, 2011.

E. Arzt and W. D. Nix, A model for the effect of line width and mechanical strength on electromigration failure of interconnects with "near-bamboo" grain structures, In: Journal of Materials Research, vol.6, pp.731-736, 2011.

B. J. Baliga, M. S. Adler, R. P. Love, P. V. Gray, and N. D. Zommer, The Insulated Gate Transistor: A New Three-Terminal MOS-Controlled Bipolar Power Device, IEEE Transactions on Electron Devices, vol.31, pp.821-828, 1984.

T. J. Balk, G. Dehm, and E. Arzt, Parallel glide: Unexpected dislocation motion parallel to the substrate in ultrathin copper films, Acta Materialia, vol.51, pp.4471-4485, 2003.

R. Bayerer, Higher Junction Temperature in Power Modules-a demand from hybrid cars, a potential for the next step increase in power density for various Variable Speed Drives, Proc. of PCIM, 2008.

H. Berg and E. Wolfgang, Advanced IGBT Modules for Railway Traction Applications: Reliability Testing, In: Microelectronics Reliability, vol.38, pp.1319-1323, 1998.

B. Bernoux, Caractérisation de MOSFETs de puissance cyclés en avalanche pour des applications automobiles micro-hybrides, 2010.

B. Bernoux, R. Escoffier, P. Jalbaud, and J. M. Dorkel, Source electrode evolution of a low voltage power MOSFET under avalanche cycling, In: Microelectronics Reliability, vol.49, pp.1341-1345, 2009.

J. R. Black, Electromigration failure modes in aluminum metallization for semiconductor devices, Proceedings of the IEEE, vol.57, pp.1587-1594, 1969.

O. Bostrom, Wafer shape control-Study of the reactivity in Ti/Al dual layers and its effect on the stress, 2001.

M. Bouarroudj-berkani, Etude de la fatigue thermo-mécanique de modules électroniques de puissance en ambiance de températures élevées pour des applications de traction de véhicules électriques et hybrides, thèse de doctorat, 2008.

M. Brincker, K. B. Pedersen, P. K. Kristensen, and V. N. Popok, Effects of thermal cycling on aluminum metallization of power diodes, In: Microelectronics Reliability, vol.55, issue.10, pp.1988-1991, 2015.

M. Brincker, K. B. Pedersen, P. Kjaer-kristensen, and V. Popok, Passive thermal cycling of power diodes under controlled atmospheric conditions-effects on metallization degradation, Proc. of CIPS, 2016.

M. S. Broll, U. Geissler, J. Höfer, S. Schmitz, O. Wittler et al., Microstructural evolution of ultrasonic-bonded aluminum wires, In: Microelectronics Reliability, vol.55, pp.961-968, 2015.

Y. Celnikier, L. Dupont, E. Hervé, G. Coquery, and L. Benabou, Optimization of wire connections design for power electronics, In: Microelectronics Reliability, vol.51, pp.1892-1897, 2011.
URL : https://hal.archives-ouvertes.fr/hal-01704479

M. Ciappa, Selected failure mechanisms of modern power modules, In: Microelectronics Reliability, vol.42, pp.653-667, 2002.

E. Deng, Z. Zhao, Q. Xin, J. Zhang, and Y. Huang, Analysis on the difference of the characteristic between high power IGBT modules and press pack IGBTs, In: Microelectronics Reliability, vol.78, pp.25-37, 2017.

L. Dupont, S. Lefebvre, M. B. Bouaroudj, Z. Khatir, and J. C. Faugières, Failure modes on low voltage power MOSFETs under high temperature application, In: Microelectronics Reliability, vol.47, pp.1767-1772, 2007.
URL : https://hal.archives-ouvertes.fr/hal-01704346

J. J. Ebers, Four-Terminal P-N-P-N Transistors, In: Proceedings of the I.R.E, vol.83, pp.1361-1364, 1952.

R. F. Egerton, Electron energy-loss spectroscopy in the TEM, In: Reports on Progress in Physics, vol.72, p.16502, 2008.

J. G. Elerath and M. Pecht, IEEE 1413: A standard for reliability predictions, IEEE Transactions on Reliability, vol.61, issue.1, pp.125-129, 2012.

P. A. Flinn and D. S. Gardner, Measurement and Interpretation of Stress in Aluminum-Based Metallization as a Function of Thermal History, IEEE Transactions on Electron Devices, vol.34, pp.689-699, 1987.

L. B. Freund, J. A. Floro, and E. Chason, Extensions of the Stoney formula for substrate curvature to configurations with thin substrates or large deformations, In: Applied Physics Letters, vol.74, pp.1987-1989, 1999.

H. J. Frost and M. F. Ashby, Deformation mechanisms maps. Pergamon P, 1982.

H. Gao, L. Zhang, W. D. Nix, C. V. Thompson, and E. Arzt, Cracklike grain-boundary diffusion wedges in thin metal films, Acta Materialia, vol.47, pp.2865-2878, 1999.

L. A. Giannuzzi and M. Utlaut, Non-monotonic material contrast in scanning ion and scanning electron images, In: Ultramicroscopy, vol.111, pp.1564-1573, 2011.

M. Glavanovics, T. Detzel, and K. Weber, Impact of thermal overload operation on wirebond and metallization reliability in smart power devices, Proceedings of the 30th European Solid-State Circuits Conference, pp.273-276, 2004.

J. Goehre, F. Izm, U. Geißler, and M. Schneider-ramelow, Influence of Bonding Parameters on the Reliability of Heavy Wire Bonds on Power Semiconductors Selection of Bonding Parameters for the, Proc. of CIPS, pp.6-8, 2012.

J. Goehre, M. Schneider-ramelow, U. Geißler, and K. Lang, Interface Degradation of Al Heavy Wire Bonds on Power Semiconductors during Active Power Cycling measured by the Shear Test, Proc. CIPS, pp.1-6, 2010.

J. Goldestein, D. E. Newburry, D. C. Joy, C. E. Lyman, P. Echlin et al., Scanning Electron Microscopy and X-ray Microanalysis, 2003.

A. Guédon, E. Woirgard, and C. Zardini, Evaluation of lead-free soldering for automotive applications, In: Microelectronics Reliability, vol.42, pp.1555-1558, 2002.

W. B. Hampshire and C. A. , Packaging. ASM Intern, 1989.

P. Jacob and G. Nicoletti, Failure causes generating aluminium protrusion/extrusion, Microelectronics Reliability, vol.53, pp.1553-1557, 2013.

G. C. Janssen, M. M. Abdalla, F. Van-keulen, B. R. Pujada, and B. Van-venrooy, Celebrating the 100th anniversary of the Stoney equation for film stress: Developments from polycrystalline steel strips to single crystal silicon wafers, In: Thin Solid Films, vol.517, pp.1858-1867, 2009.

Y. C. Joo and C. V. Thompson, Analytic model for the grain structures of near-bamboo interconnects, In: Journal of Applied Physics, vol.76, pp.7339-7346, 1994.

B. Kaouache, P. Gergaud, O. Thomas, O. Bostrom, and M. Legros, Impact of thermal cycling on the evolution of grain, precipitate and dislocation structure in Al, 0.5% Cu, 1% Si thin films, In: Microelectronic Engineering, vol.70, issue.2-4, pp.447-454, 2003.

J. G. Kassakian and D. J. Perreault, The Future of Electronics in Automobiles, Proceedings of the 13th International Symposium on Power Semiconductor Devices and ICs, pp.15-19, 2001.

M. A. Kelly, Automotive Electronics Council, Short circuit reliability characterization of smart power devices for 12V systems, Attachement, vol.12, 2006.

B. W. Kempshall, S. M. Schwarz, B. I. Prenitzer, L. Giannuzzi, R. B. Irwin et al., Ion channeling effects on the focused ion beam milling of Cu, In: Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.19, p.749, 2001.

B. Khong, Fiabilité prédictive de composants de puissance soumis à des tests de fatigue accélérés, 2007.

B. Khong, M. Legros, P. Tounsi, P. Dupuy, X. Chauffleur et al., Characterization and modelling of ageing failures on power MOSFET devices, In: Microelectronics Reliability, vol.47, pp.1735-1740, 2007.

B. Khong, P. Tounsi, P. Dupuy, X. Chauffleur, M. Legros et al., Innovative methodology for predictive reliability of intelligent power devices using extreme electro-thermal fatigue, In: Microelectronics Reliability, vol.45, issue.11, pp.1717-1722, 2005.

J. Korec and C. Bull, History of FET Technology and the Move to NexFET TM, pp.44-50, 2009.

O. Kraft, L. B. Freund, R. Phillips, and E. Arzt, Dislocation plasticity in thin metal films, MRS Bulletin, vol.27, pp.30-37, 2002.

J. E. Krzanowski, A transmission electron microscopy study of ultrasonic wire bonding, Proc. of Electronic Components Conference, pp.450-455, 1989.

C. Langlois, T. Douillard, H. Yuan, N. P. Blanchard, A. Descampsmandine et al., Crystal orientation mapping via ion channeling: An alternative to EBSD, In: Ultramicroscopy, vol.157, pp.65-72, 2015.
URL : https://hal.archives-ouvertes.fr/hal-02066168

B. S. Lee, Y. H. Ko, J. H. Bang, C. W. Lee, S. Yoo et al., Interfacial reactions and mechanical strength of Sn-3.0Ag0.5Cu/Ni/Cu and Au-20Sn/Ni/Cu solder joints for power electronics applications, In: Microelectronics Reliability, vol.71, pp.119-125, 2017.

W. W. Lee, L. T. Nguyen, and G. S. Selvaduray, Solder joint fatigue models: review and applicability to chip scale packages, In: Microelectronics Reliability, vol.40, pp.231-244, 2000.

M. Legros, Relaxation plastique des couches métalliques par dislocations et défauts étendus, Série Electronique Et MicroÉlectronique). M. Mouis, 2006.

M. Legros, M. Cabié, and D. S. Gianola, In situ deformation of thin films on substrates, In: Microscopy Research and Technique, vol.72, pp.270-283, 2009.

M. Legros, G. Dehm, T. J. Balk, E. Arzt, J. R. Bostrom et al., Plasticity-related phenomena in metallic films on substrates, Materials Research Society Symposium-Proceedings, vol.779, pp.63-74, 2003.

M. Legros, K. J. Hemker, A. Gouldstone, S. Suresh, R. Kellerflaig et al., Microstructural evolution in passivated Al films on Si substrates during thermal cycling, Acta Materialia, vol.50, pp.3435-3452, 2002.

M. Legros, G. Dehm, and T. Balk, In-Situ TEM Study of Plastic Stress Relaxation Mechanisms and Interface Effects in Metallic Films Marc, MRS online Proc. Library Archive, vol.875, pp.237-247, 2005.

J. Lienig, Interconnect and Current Density Stress-An introduction to Electromigration-Aware Design, Proceedings of the 2005 international workshop on System level interconnect prediction, vol.1, pp.81-88, 2005.

J. E. Lilienfeld, Method and apparatus for controlling electric currents. Patent 1,745,175, 1926.

R. K. Lowry, Laser decapsulation method. Patent US 7,316, pp.936-938, 2008.

I. Lum, M. Mayer, and Y. Zhou, Footprint study of ultrasonic wedge-bonding with aluminum wire on copper substrate, Journal of Electronic Materials, vol.35, issue.3, pp.433-442, 2006.

J. Lutz, H. Schlangenotto, U. Scheuermann, and R. De-doncker, Semiconductor Power Devices: Physics, Characteristics, Reliability, 2011.

D. Martineau, Caractérisation de l'endommagement de composants électroniques de puissance soumis à des tests de vieillissement accéléré, 2011.

D. Martineau, C. Levade, M. Legros, P. Dupuy, and T. Mazeaud, Universal mechanisms of Al metallization ageing in power MOSFET devices, In: Microelectronics Reliability, vol.54, pp.2432-2439, 2014.
URL : https://hal.archives-ouvertes.fr/hal-01729249

D. Martineau, T. Mazeaud, M. Legros, P. Dupuy, and C. Levade, Characterization of alterations on power MOSFET devices under extreme electro-thermal fatigue, In: Microelectronics Reliability, vol.50, pp.1768-1772, 2010.

J. W. Matthews and A. E. Blakeslee, Defects in epitaxial multilayers. II. Dislocation pile-ups, threading dislocations, slip lines and cracks, In: Journal of Crystal Growth, vol.29, pp.273-280, 1975.

J. W. Matthews and A. E. Blakeslee, Defects in Epitaxial Multilayers .1. Misfit Dislocations, In: Journal of Crystal Growth, vol.27, pp.118-125, 1974.

J. Mayer, L. A. Giannuzzi, T. Kamino, and J. Michael, TEM Sample Preparation and FIB-Induced Damage, MRS Bulletin, vol.32, pp.400-407, 2007.

V. Mehrotra, J. He, M. S. Dadkhah, K. Rugg, and M. C. Shaw, Wirebond Reliability in IGBT-Power Modules: Application of High Resolution Strain and Temperature Mapping, Proc. ISPSD, pp.113-116, 1999.

J. Michael and L. Giannuzzi, Improved EBSD Sample Preparation Via Low Energy Ga+ FIB Ion Milling, In: Microscopy and Microanalysis, vol.13, pp.926-927, 2007.

J. L. Moll, M. Tanenbaum, J. M. Goldey, and N. Holonyak, P-N-P-N Transistor Switches, Proceedings of the IRE, vol.44, pp.1174-1182, 1956.

F. Morancho, Le transistor MOS de puissance à tranchées : modélisation et limites de performances. Micro et nanotechnologies/Microélectronique, 1996.

C. W. Mueller and J. Hilibrand, The "Thyristor'"-A New Highspeed Switchhg Transistor, IRE Transactions, vol.18, pp.2-5, 1958.

P. Muellner and E. Arzt, Observation of dislocation disappearance in aluminum thin films and consequences for thin film properties, Proceedings of the 1997 MRS, vol.505, pp.149-154, 1998.

W. W. Mullins, Idealized two Dimensional Sintering by Interface Diffusion, In: Scripta metall. et mater, vol.29, pp.491-496, 1993.

M. , A reliable technology concept for active power cycling to extreme temperatures, In: Microelectronics Reliability, vol.51, issue.11, pp.1927-1932, 2011.

M. , Effective and reliable heat management for power devices exposed to cyclic short overload pulses, In: Microelectronics Reliability, vol.53, issue.11, pp.1745-1749, 2013.

W. D. Nix, Mechanical properties of thin films, In: Metallurgical Transactions A, vol.20, issue.11, pp.2217-2245, 1989.

W. D. Nix and H. Gao, Atomistic interpretation of interface stress, Scripta Materialia, vol.39, pp.1653-1661, 1998.

E. L. Owen, SCR Is 50 Years Old, IEEE Industry Applications Magazine, vol.13, pp.6-10, 2007.

K. B. Pedersen, D. Benning, P. K. Kristensen, V. N. Popok, and K. ,

. Pedersen, Interface structure and strength of ultrasonically wedge bonded heavy aluminium wires in Si-based power modules, In: Journal of Materials Science: Materials in Electronics, vol.25, pp.2863-2871, 2014.

E. Philofsky, Design Limits When using Gold-Aluminum Bonds, Proc. of 9th Reliability Physics Symposium, pp.114-119, 1971.

S. Pietranico, S. Lefebvre, S. Pommier, M. B. Bouaroudj, and S. Bontemps, A study of the effect of degradation of the aluminium metallization layer in the case of power semiconductor devices, In: Microelectronics Reliability, vol.51, pp.1824-1829, 2011.
URL : https://hal.archives-ouvertes.fr/hal-01636559

S. Pietranico, S. Pommier, S. Lefebvre, and S. Pattofatto, Thermal fatigue and failure of electronic power device substrates, In: International Journal of Fatigue, vol.31, pp.1911-1920, 2009.
URL : https://hal.archives-ouvertes.fr/hal-00417898

P. Procter, Mold Compound, High Performance Requirements, 2003.

S. Ramminger, N. Seliger, and G. Wachutka, Reliability model for Al wire bonds subjected to heel crack failures, In: Microelectronics Reliability, vol.40, pp.1521-1525, 2000.

S. Ramminger, P. Ttirkes, and G. Wachutka, Crack Mechanism in Wire Bonding Joints, In: Microelectronics Reliability, vol.38, pp.1301-1305, 1998.

E. F. Rauch and M. Véron, Automated crystal orientation and phase mapping in TEM, In: Materials Characterization, vol.98, pp.1-9, 2014.
URL : https://hal.archives-ouvertes.fr/hal-01121290

E. F. Rauch, M. Véron, J. Portillo, D. Bultreys, Y. Maniette et al., Automatic Crystal Orientation and Phase Mapping in TEM by Precession Diffraction, In: Microscopy and Analysis, vol.22, pp.5-8, 2008.

L. Reimer, U. Heilers, and G. Saliger, Kikuchi band contrast in diffraction patterns recorded by transmitted and backscattered electrons, In: Scanning, vol.8, pp.101-118, 1986.

G. Romano, M. Riccio, G. De-falco, L. Maresca, A. Irace et al., An ultrafast IR thermography system for transient temperature detection on electronic devices, Proc. of Annual IEEE Semiconductor Thermal Measurement and Management Symposium, pp.80-84, 2014.

G. Rostaing, M. Berkani, D. Mechouche, D. Labrousse, S. Lefebvre et al., Reliability of power MOSFET-based smart switches under normal and extreme conditions for 24V battery system applications, In: Microelectronics Reliability, vol.53, issue.11, pp.1703-1706, 2013.
URL : https://hal.archives-ouvertes.fr/hal-01700479

J. P. Russell, A. M. Goodman, L. A. Goodman, and J. M. Neilson, The COMFET-A New High Conductance MOS-Gated Device, In: IEEE Electron Device Letters, vol.4, issue.3, pp.63-65, 1983.

J. Sanchez, State of the art and trends in power integration, vol.33, pp.20-29, 1999.

W. Sanfins, Caractérisation et modélisation de modules de puissance "fail-to-short" pour convertisseurs sécurisés à tolérance de pannes-Application véhicule électrique hybride, 2017.

C. J. Santoro, Thermal Cycling and Surface Reconstruction in Aluminum Thin Films, In: Journal of The Electrochemical Society, vol.116, p.361, 1969.

J. B. Sauveplane, P. Tounsi, E. Scheid, and A. Deram, 3D electrothermal investigations for reliability of ultra low ON state resistance power MOSFET, In: Microelectronics Reliability, vol.48, pp.1464-1467, 2008.

U. Scheuermann and S. Schuler, Power cycling results for different control strategies, In: Microelectronics Reliability, vol.50, issue.11, pp.1203-1209, 2010.

A. J. Schwartz, M. Kumar, B. L. Adams, and D. P. Field, Electron Backscatter Diffraction in Materials Science, 2000.

R. A. Schwarzer and D. Gerth, The effect of grain orientation on the relaxation of thermomechanical stress and hillock growth in AI1%Si conductor layers on silicon substrates, In: Journal of Electronic Materials, vol.22, pp.607-610, 1993.

W. Shockley and J. K. Sparks, Teal, p-n Junction Transistors, Physical Review, In: Physical Review, vol.83, pp.151-162, 1951.

W. Shockleyt, A Unipolar " Field-Effect " Transistor, Proc. of the I.R.E. 1952, pp.1365-1376

V. Smet, F. Forest, J. J. Huselstein, F. Richardeau, Z. Khatir et al., Ageing and failure modes of IGBT modules in high-temperature power cycling, IEEE Transactions on Industrial Electronics, vol.58, pp.4931-4941, 2011.
URL : https://hal.archives-ouvertes.fr/hal-00713206

G. G. Stoney, The tension of metallic films deposited by Electrolysis, In: Proceedings of the Royal Society of London A, vol.82, pp.172-175, 1909.

S. C. Sun and J. D. Plummer, Modeling of the On-Resistance of LDMOS, VDMOS and 46 VMOS Power Transistors, IEEE Transactions On Electron Devices, vol.27, pp.356-367, 1980.

S. Suresh, Fatigue of Materials, Second Edition. Cambridge, 1998.

C. V. Thompson, Structure evolution during processing of polycrystalline films, Annu. Rev. Materials Science, vol.30, pp.159-90, 2000.

J. M. Titchmarsh, Comparison of high spatial resolution in EDX and EELS analysis, In: Ultramicroscopy, vol.28, issue.1-4, pp.347-351, 1989.

S. I. Tomkeieff, Linear Intercepts, Areas and Volumes, Nature, vol.155, pp.24-24, 1945.

P. K. Tse and T. M. Lach, Aluminum electromigration of 1-mil bond wire in octal inverter integrated circuits, 1995 Proceedings of 45th Electronic Components and Technology Conference, 1995.

N. Tsuji, Y. Ito, Y. Saito, and Y. Minamino, Strength and ductility of ultrafine grained aluminum and iron produced by ARB and annealing, Scripta Materialia, vol.47, pp.893-899, 2002.

J. Turlo, Deformation behavior of thin aluminum films on silicon substrates, 1992.

P. Turpin, L. Guillot, M. Cousineau, P. Dupuy, and P. Perruchoud, Fuse end Relay Replacement by Intelligent 2 m? RdsON Smart Power Switches, Proc. of 10th European Conference on Power Electronics and Applications, 2003.

S. Vaidya, T. T. Sheng, and A. K. Sinha, Linewidth dependence of electromigration in evaporated Al-0.5%Cu, In: Applied Physics Letters, vol.36, issue.6, pp.464-466, 1980.

D. T. Walton, H. J. Frost, and C. V. Thompson, Development of nearbamboo and bamboo microstructures in thin-film strips, In: Applied Physics Letters, vol.61, pp.40-42, 1992.

D. T. Walton, H. J. Frost, and C. V. Thompson, Development of nearbamboo and bamboo microstructures in thin-film strips, In: Applied Physics Letters, vol.61, pp.40-42, 1992.

H. Wang, M. Liserre, and F. Blaabjerg, Toward reliable power electronics: Challenges, design tools, and opportunities, In: IEEE Industrial Electronics Magazine, vol.7, issue.2, pp.17-26, 2013.

D. Weiss, H. Gao, and E. Arzt, Constrained diffusional creep in UHV-produced copper thin films, Acta Materialia, vol.49, pp.2395-2403, 2001.

B. L. Wensink, Jet etch method for decapsulation of molded devices, 1983.

G. Wiederhirn, The strength limits of ultra-thin copper films, p.212, 2007.

D. B. Williams and C. B. Carter, Transmission Electron Microscope, A Textbook for Materials Science, 2009.

R. K. Williams, M. N. Darwish, R. A. Blanchard, R. Siemieniec, P. Rutter et al., The trench power MOSFET: Part i-History, technology, and prospects, IEEE Transactions on Electron Devices, vol.64, pp.674-691, 2017.

H. Xu, C. Liu, V. V. Silberschmidt, S. S. Pramana, T. J. White et al., Behavior of aluminum oxide, intermetallics and voids in Cu-Al wire bonds, Acta Materialia, vol.59, pp.5661-5673, 2011.

Y. Yamada, Y. Takaku, Y. Yagi, I. Nakagawa, T. Atsumi et al., Reliability of wire-bonding and solder joint for high temperature operation of power semiconductor device, In: Microelectronics Reliability 47, vol.12, pp.2147-2151, 2007.

T. Youssef, W. Rmili, E. Woirgard, S. Azzopardi, N. Vivet et al., Power modules die attach: A comprehensive evolution of the nanosilver sintering physical properties versus its porosity, In: Microelectronics Reliability, vol.55, issue.10, pp.1997-2002, 2015.
URL : https://hal.archives-ouvertes.fr/hal-01857025

K. Zeng and K. N. Tu, Six cases of reliability study of Pb-free solder joints in electronic packaging technology, In: Materials Science and Engineering: R: Reports, vol.38, pp.55-105, 2002.

K. Zheng, Electron-beam-assisted superplastic shaping of nanoscale amorphous silica, In: Nature Communications, vol.1, pp.28-36, 2010.