F. Leonard and A. A. Talin, Electrical contacts to one- and two-dimensional nanomaterials, Nature Nanotechnology, vol.85, issue.12, pp.773-783
DOI : 10.1103/PhysRevLett.85.1958

R. W. Olesinski and G. J. Abbaschian, The Cu-Ge (Copper-Germanium) system. Bulletin of Alloy Phase Diagrams, pp.28-35, 1986.

L. Krusin-elbaum and M. O. Aboelfotoh, Unusually low resistivity of copper germanide thin films formed at low temperatures, Applied Physics Letters, vol.13, issue.12, pp.1341-1343, 1991.
DOI : 10.1080/00018735200101151

A. J. Mcalister and J. L. Murray, The Al-Ge (Aluminum-Germanium) system . Bulletin of Alloy Phase Diagrams, pp.341-347, 1984.

L. Tanner and H. Okamoto, The Pt-Si (Platinum-Silicon) system, Journal of Phase Equilibria, vol.77, issue.2, pp.571-574, 1991.
DOI : 10.1007/BF02645072

H. Ryll, M. Simson, M. D. Hertog, R. Dunin-borkowski, K. Hajraoui et al., Imaging At the Timescale Of Micro- and Milliseconds With the pnCCD (S)TEM Camera, Microscopy and Microanalysis, vol.19, issue.S3, pp.1585-1586, 1017.
DOI : 10.1021/nn202524j
URL : https://hal.archives-ouvertes.fr/hal-01638848

C. Hollauer, Modeling of Thermal Oxidation and Stress Effects PhD thesis, eingereicht an der Technischen Universität Wien Fakultät für Elektrotechnik BIBLIOGRAPHY und Informationstechnik, 2007.

N. Petkov, Real-Time TEM Reveals Growth, Transformation and Function in One-Dimensional Nanoscale Materials: From a Nanotechnology Perspective, ISRN Nanotechnology, vol.11, issue.9
DOI : 10.1021/nl201233u

S. Kral, C. Zeiner, M. Stöger-pollach, E. Bertagnolli, M. I. Den-hertog et al., Abrupt Schottky Junctions in Al/Ge Nanowire Heterostructures, Nano Letters, vol.15, issue.7, pp.4783-4787
DOI : 10.1021/acs.nanolett.5b01748
URL : https://hal.archives-ouvertes.fr/hal-01615211

C. Subramaniam, T. Yamada, K. Kobashi, A. Sekiguchi, D. N. Futaba et al., One hundred fold increase in current carrying capacity in a carbon nanotube???copper composite, Nature Communications, vol.33, 2013.
DOI : 10.1063/1.3147183

F. M. Brunbauer, E. Bertagnolli, J. Majer, and A. Lugstein, Electrical transport properties of single-crystal Al nanowires, Nanotechnology, vol.27, issue.38, p.27
DOI : 10.1088/0957-4484/27/38/385704

. K. Prof and . Saraswat, Polycides, salicides and metals gates, 2010.

D. L. Beke, Landolt-Bronstein : Group III Condensed Matter, volume 33A, 1998.

M. Mongillo, P. Spathis, G. Katsaros, P. Gentile, M. Sanquer et al., Joule-Assisted Silicidation for Short-Channel Silicon Nanowire Devices, ACS Nano, vol.5, issue.9, pp.7117-7123
DOI : 10.1021/nn202524j

Y. C. Chou, W. W. Wu, B. Y. Cheng, S. L. Yoo, N. Myung et al., in Nanowires of Si, Nano Letters, vol.8, issue.8, pp.2194-2199, 2008.
DOI : 10.1021/nl080624j

V. C. Holmberg, K. A. Collier, and B. A. , Real-Time Observation of Impurity Diffusion in Silicon Nanowires, Nano Letters, vol.11, issue.9, pp.3803-3808
DOI : 10.1021/nl201879u

Y. C. Lin, Y. Chen, and Y. Huang, The growth and applications of silicides for nanoscale devices, Nanoscale, vol.32, issue.5, pp.1412-1421
DOI : 10.1109/20.539125

Y. E. Yaish, A. Katsman, G. M. Cohen, and M. Beregovsky, Kinetics of nickel silicide growth in silicon nanowires: From linear to square root growth, Journal of Applied Physics, vol.109, issue.9, p.94303, 2011.
DOI : 10.1007/s11664-009-1071-1

K. Ogata, E. Sutter, X. Zhu, and S. Hofmann, core/shell nanowires, Nanotechnology, vol.22, issue.36, p.365305, 2011.
DOI : 10.1088/0957-4484/22/36/365305

Y. T. Wu, C. W. Huang, C. H. Chiu, C. F. Chang, J. Y. Chen et al., Nickel/Platinum Dual Silicide Axial Nanowire Heterostructures with Excellent Photosensor Applications, Nano Letters, vol.16, issue.2, pp.1086-1091
DOI : 10.1021/acs.nanolett.5b04309

L. J. Huang, K. N. Chen, and . Tu, The influence of surface oxide on the growth of metal/semiconductor nanowires, Nano Letters, vol.11, issue.7, pp.2753-2758

N. S. Dellas, Silicide and germanide contacts to silicon and germanium nanowires, 2011.

C. H. Chiu, C. W. Huang, J. Y. Chen, Y. T. Huang, J. C. Hu et al., Copper silicide/silicon nanowire heterostructures: in situ TEM observation of growth behaviors and electron transport properties, Nanoscale, vol.12, issue.11, pp.5086-5092, 2013.
DOI : 10.1021/cg300273d

S. C. Hsu, C. L. Hsin, C. W. Huang, S. Y. Yu, C. W. Wang et al., Single-crystalline Ge nanowires and Cu3Ge/Ge nano-heterostructures, CrystEngComm, vol.102, issue.14, pp.4570-4574
DOI : 10.1103/PhysRevLett.102.106805

Y. Chen, Y. C. Lin, X. Zhong, H. C. Cheng, X. Duan et al., Kinetic Manipulation of Silicide Phase Formation in Si Nanowire Templates, Nano Letters, vol.13, issue.8, pp.3703-3708
DOI : 10.1021/nl401593f

H. Okino, I. Matsuda, R. Hobara, Y. Hosomura, S. Hasegawa et al., Applied physics letters, situ resistance measurements of epitaxial cobalt silicide nanowires on Si, pp.233108-233108, 2005.

T. Burchhart, A. Lugstein, Y. J. Hyun, G. Hochleitner, and E. Bertagnolli, Atomic Scale Alignment of Copper-Germanide Contacts for Ge Nanowire Metal Oxide Field Effect Transistors, Nano Letters, vol.9, issue.11, pp.3739-3742, 2009.
DOI : 10.1021/nl9019243

Y. Wu, J. Xiang, C. Yang, W. Lu, and C. M. Lieber, Single-crystal metallic nanowires and metal/semiconductor nanowire heterostructures, Nature, issue.6995, pp.43061-65, 2004.

J. L. Lensch-falk, E. R. Hemesath, and L. J. Lauhon, Syntaxial Growth of Ge/Mn-Germanide Nanowire Heterostructures, Nano Letters, vol.8, issue.9, pp.2669-2673, 2008.
DOI : 10.1021/nl800933s

H. Y. Yang, L. J. Tuan, K. L. Chen, and . Wang, Ferromagnetic germanide in Ge nanowire transistors for spintronics application, ACS Nano, vol.6, issue.6, pp.5710-5717

Y. C. Lin, K. C. Lu, W. W. Wu, J. Bai, L. J. Chen et al., Single Crystalline PtSi Nanowires, PtSi/Si/PtSi Nanowire Heterostructures, and Nanodevices, Nano Letters, vol.8, issue.3, pp.913-918, 2008.
DOI : 10.1021/nl073279r

M. Tinani, A. Mueller, Y. Gao, E. A. Irene, Y. Z. Hu et al., In situ real-time studies of nickel silicide phase formation, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.19, issue.2, pp.376-383, 2001.
DOI : 10.1116/1.1347046

F. Heurle and L. Miglio, Silicides : Fundamentals and applications, World Scientific, 2000.

W. Tang, B. M. Nguyen, R. Chen, and S. A. Dayeh, Solid-state reaction of nickel silicide and germanide contacts to semiconductor nanochannels, Semiconductor Science and Technology, vol.29, issue.5, p.54004, 2014.
DOI : 10.1088/0268-1242/29/5/054004

S. M. Sze, Semiconductor Devices -Physics and Technology, 1985.

W. Tang, S. A. Dayeh, S. T. Picraux, J. Y. Huang, and K. N. Tu, Ultrashort Channel Silicon Nanowire Transistors with Nickel Silicide Source/Drain Contacts, Nano Letters, vol.12, issue.8, pp.3979-3985
DOI : 10.1021/nl3011676

O. C. Aviles and A. I. Oliva, PHYSICAL PROPERTIES OF AU AND AL THIN FILMS MEASURED BY RESISTIVE HEATING, Surface Review and Letters, vol.27, issue.01, pp.101-106, 2005.
DOI : 10.1016/S0924-4247(96)01401-X

H. Bracht, Copper related diffusion phenomena in germanium and silicon. Materials science in semiconductor processing, pp.113-124, 2004.

R. N. Hall and J. H. Racette, Diffusion and Solubility of Copper in Extrinsic and Intrinsic Germanium, Silicon, and Gallium Arsenide, Journal of Applied Physics, vol.7, issue.2, pp.379-397, 1964.
DOI : 10.1063/1.1735538

J. C. Severiens and C. S. Fuller, Mobility of Impurity Ions in Germanium and Silicon, Physical Review, vol.87, issue.5, pp.1322-1323, 1953.
DOI : 10.1103/PhysRev.87.526

F. C. Frank and D. Turnbull, Mechanism of Diffusion of Copper in Germanium, Physical Review, vol.27, issue.3, pp.617-618, 1956.
DOI : 10.1063/1.1722229

H. M. Tawancy and M. O. Aboelfotoh, Effect of phase transitions in copper-germanium thin film alloys on their electrical resistivity, Journal of Materials Science, vol.6, issue.23, pp.6053-6064, 1995.
DOI : 10.1007/BF01151527

A. Aubin, Analyse de la formation des phases du système cuivre-germanium par diffraction des rayons x sur des échantillons d'épaisseur nanoscopique

F. M. Heurle and J. Gupta, Phase formations in the copper-germanium system: Reactions, structures and resistivities, Applied Surface Science, pp.73-214, 1993.

J. Kedzierski, P. Xuan, E. H. Anderson, J. Bokor, T. King et al., Complementary silicide source/drain thin-body MOSFETs for the 20 nm gate length regime IEDM '00. Technical Digest . International Overview and status of metal S/D Schottky-barrier MOSFET technology, Electron Devices Meeting, pp.57-601048, 2000.

H. Mehrer, Diffusion in Solids, 2007.
DOI : 10.1007/978-3-540-71488-0

B. E. Deal and A. S. Grove, General Relationship for the Thermal Oxidation of Silicon, Journal of Applied Physics, vol.46, issue.12, pp.3770-3778, 1965.
DOI : 10.1016/0022-3697(63)90021-0

F. Nemouchi, D. Mangelinck, C. Bergman, P. Gas, and U. Smith, Differential scanning calorimetry analysis of the linear parabolic growth of nanometric Ni silicide thin films on a Si substrate, Applied Physics Letters, vol.86, issue.4, p.41903, 2005.
DOI : 10.4028/www.scientific.net/MSF.155-156.15

Y. Chen, Y. C. Lin, C. W. Huang, C. W. Wang, L. J. Chen et al., Kinetic Competition Model and Size-Dependent Phase Selection in 1-D Nanostructures, Nano Letters, vol.12, issue.6, pp.3115-3120
DOI : 10.1021/nl300990q

J. Appenzeller, J. Knoch, E. Tutuc, M. Reuter, and S. Guha, Dual-gate silicon nanowire transistors with nickel silicide contacts. International Electron Devices Meeting Technical Digest, 2006.

A. Katsman, Y. Yaish, E. Rabkin, and M. Beregovsky, Surface Diffusion Controlled Formation of Nickel Silicides in Silicon Nanowires, Journal of Electronic Materials, vol.38, issue.4, pp.365-370, 2010.
DOI : 10.1007/s11664-009-1071-1

R. S. Wagner and W. C. Ellis, VAPOR???LIQUID???SOLID MECHANISM OF SINGLE CRYSTAL GROWTH, Applied Physics Letters, vol.33, issue.5, pp.89-90, 1964.
DOI : 10.1063/1.1777195

D. B. Williams and C. B. Carter, Transmission Electron Microscopy, 2009.

M. Hertog, Caractérisation de Nanofils de Silicium par Microscopie Electronique en Transmission, 2009.

N. Stoddard, G. Duscher, W. Windl, and G. Rozgonyi, A new understanding of near-threshold damage for 200 keV irradiation in silicon, Journal of Materials Science, vol.32, issue.14, pp.3639-3650, 2005.
DOI : 10.1007/978-1-4757-5099-7

D. Cooper, N. Bernier, and J. L. Rouviere, Combining 2 nm Spatial Resolution and 0.02% Precision for Deformation Mapping of Semiconductor Specimens in a Transmission Electron Microscope by Precession Electron Diffraction, Nano Letters, vol.15, issue.8, pp.5289-5294, 2015.
DOI : 10.1021/acs.nanolett.5b01614
URL : https://hal.archives-ouvertes.fr/hal-01588268

D. Cooper, N. Bernier, and J. L. Rouviere, Field mapping of semiconductor devices in a transmission electron microscope with nanometre scale resolution by off-axis electron holography and precession electron diffraction, 2015 IEEE 15th International Conference on Nanotechnology (IEEE-NANO), pp.777-780, 2015.
DOI : 10.1109/NANO.2015.7388725

J. E. Wood, D. B. Williams, and J. I. Goldstein, Experimental and theoretical determination of kAFe factors for quantitative X-ray microanalysis in the analytical electron microscope, Journal of Microscopy, vol.69, issue.3-4, pp.255-274, 1984.
DOI : 10.1007/978-1-4757-5581-7_4

P. J. Sheridan, Determination of experimental and theoreticalkASi factors for a 200-kV analytical electron microscope, Journal of Electron Microscopy Technique, vol.133, issue.1, pp.41-61, 1989.
DOI : 10.1007/978-1-4757-5581-7_4

J. I. Goldstein, J. L. Costley, G. W. Lorimer, R. R. Burdet, Z. Saghi et al., Quantitative X-ray analysis in the electron microscope A novel 3D absorption correction method for quantitative EDX-STEM tomography, Scanning Electron Microscopy Ultramicroscopy, vol.1, issue.160, pp.315-324118, 1977.

M. Watanabe and D. B. Willams, The quantitative analysis of thin specimens: a review of progress from the Cliff-Lorimer to the new zeta-factor methods, Journal of Microscopy, vol.133, issue.2
DOI : 10.1088/0370-1298/69/5/305

P. Rueda-fonseca, E. Robin, E. Bellet-amalric, M. Lopez-haro, M. D. Hertog et al., Quantitative Reconstructions of 3D Chemical Nanostructures in Nanowires, Nano Letters, vol.16, issue.3, pp.1637-1642
DOI : 10.1021/acs.nanolett.5b04489
URL : https://hal.archives-ouvertes.fr/hal-01274694

M. Mongillo, Transport properties and functional devices on CVD grown Silicon nanowires, 2010.
URL : https://hal.archives-ouvertes.fr/tel-00939480

M. Duchamp, Q. Xu, and R. E. Dunin-borkowski, Convenient Preparation of High-Quality Specimens for Annealing Experiments in the Transmission Electron Microscope, Microscopy and Microanalysis, vol.209, issue.06, pp.1638-1645, 2014.
DOI : 10.1063/1.3074309

L. Palatinus, PETS -program for analysis of electron diffraction data, Institute of Physics, 2011.

M. C. Wingert, Z. C. Chen, S. Kwon, J. Xiang, and R. Chen, Ultra-sensitive thermal conductance measurement of one-dimensional nanostructures enhanced by differential bridge, Review of Scientific Instruments, vol.83, issue.2
DOI : 10.1088/0957-0233/22/1/015103

H. Ftouni, C. Blanc, D. Tainoff, A. D. Fefferman, M. Defoort et al., Thermal conductivity of silicon nitride membranes is not sensitive to stress, Physical Review B, vol.92, issue.12, pp.92125439-92125448
DOI : 10.1016/j.jnoncrysol.2011.06.035
URL : https://hal.archives-ouvertes.fr/hal-01231839

H. J. Yang and H. Y. Tuan, High-yield, high-throughput synthesis of germanium nanowires by metal???organic chemical vapor deposition and their functionalization and applications, J. Mater. Chem., vol.64, issue.5, pp.2215-2225
DOI : 10.1103/PhysRevB.64.233401

Y. Hanaoka, K. Hinode, K. Takeda, and D. Kodama, Increase in Electrical Resistivity of Copper and Aluminum Fine Lines, MATERIALS TRANSACTIONS, vol.43, issue.7, pp.1621-1623, 2002.
DOI : 10.2320/matertrans.43.1621

J. G. Becht, F. J. Van-loo, and R. Metselaar, The solid state diffusion reaction of copper with germanium; a comparison between silicon and germanium, Reactivity of Solids, vol.6, issue.1, pp.61-73, 1988.
DOI : 10.1016/0168-7336(88)80046-9

M. Werner, H. Mehrer, and H. D. Hochheimer, Effect of hydrostatic pressure, temperature, and doping on self-diffusion in germanium, Physical Review B, vol.16, issue.6, pp.3930-3937, 1985.
DOI : 10.1088/0022-3719/16/25/003

A. Kuper, H. Letaw, L. Slifkin, E. Sonder, and C. T. Tomizuka, Self-Diffusion in Copper, Physical Review, vol.61, issue.5, pp.1224-1225, 1954.
DOI : 10.1103/PhysRev.61.325

Y. C. Chou, W. W. Wu, C. Y. Lee, C. Y. Liu, L. J. Chen et al., in [110] Si Nanowires, The Journal of Physical Chemistry C, vol.115, issue.2, pp.397-401, 108686.
DOI : 10.1021/jp108686y

C. Y. Nam, D. Tham, and J. E. Fischer, Disorder Effects in Focused-Ion-Beam-Deposited Pt Contacts on GaN Nanowires, Nano Letters, vol.5, issue.10, pp.2029-2033, 2005.
DOI : 10.1021/nl0515697

A. Thanailakis, D. C. Northrop, K. Nishimura, A. Kita, and . Toriumi, Metal-germanium Schottky barriers. Solid- State Electronics(73)90052-X. URL http://www.sciencedirect.com/science Evidence for strong Fermi-level pinning due to metal-induced gap states at metal/germanium interface, Applied Physics Letters, vol.1615, issue.911212, pp.1383-1389123123, 1973.

T. Hanrath and B. A. , Influence of Surface States on Electron Transport through Intrinsic Ge Nanowires, The Journal of Physical Chemistry B, vol.109, issue.12, pp.5518-5524
DOI : 10.1021/jp044491b

. Lauhon, Relative influence of surface states and bulk impurities on the electrical properties of Ge nanowires, Nano Letters, vol.9, issue.9, pp.3268-3274, 2009.

J. D. Cutnell and K. W. Johnson, Physics 3rd Edition, 1995.

C. Durkan and M. E. Welland, Size effects in the electrical resistivity of polycrystalline nanowires, Physical Review B, vol.76, issue.20, pp.14215-14218, 2000.
DOI : 10.1063/1.357979

E. Kirkendall, Diffusion of zinc in alpha brass, Trans AIME, vol.147, pp.104-110, 1942.

F. M. Brunbauer, E. Bertagnolli, and A. Lugstein, Gate-Tunable Electron Transport Phenomena in Al???Ge???111??????Al Nanowire Heterostructures, Nano Letters, vol.15, issue.11, pp.7514-7518
DOI : 10.1021/acs.nanolett.5b03169

V. T. Serebryanskii and V. A. , Phase diagram of the aluminum ? Boron system, Journal of Structural Chemistry, vol.308, issue.6, pp.692-694, 1961.
DOI : 10.1007/BF00747329

. Anon, Itrs international technology roadmap for semiconductors, 2015.

V. V. Eremenko, P. N. Chubov, and Y. A. Pilipenko, Dependence of the critical temperature and energy gap on the thickness of superconducting Aluminum films, SOVIET PHYSICS JETP, vol.28, issue.3, pp.389-395, 1969.