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Etude des mécanismes de formation des contacts ohmiques pour des transistors de puissance sur Nitrure de Gallium

Abstract : This PhD is part of the development of Gallium nitride based power transistors at the CEA-LETI. These transistors, especially those based on AlGaN/GaN heterostructure, are very promising for power electronics applications. The goal of this PhD is to increase the knowledge of the mechanisms responsible for the ohmic contact formation on a AlGaN/GaN structure. First, a thermodynamic study of several transition metals has been performed, leading us to select Ti/Al metallization. Then, the multiple physico-chemical reactions of this stack with nitride substrates have been studied depending on the stack composition and the annealing temperature. Finally, several studies on AlGaN/GaN structure coupling both physico-chemical and electrical characterizations reveal different decisive parameters for the formation of an ohmic contact with a low-resistance and a low annealing temperature.
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Submitted on : Friday, September 22, 2017 - 2:15:05 PM
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BERTRAND_2016_diffusion.pdf
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  • HAL Id : tel-01592003, version 1

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STAR | CEA | DRT | LETI | CEA-GRE

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Dimitri Bertrand. Etude des mécanismes de formation des contacts ohmiques pour des transistors de puissance sur Nitrure de Gallium. Micro et nanotechnologies/Microélectronique. Université Grenoble Alpes, 2016. Français. ⟨NNT : 2016GREAI060⟩. ⟨tel-01592003⟩

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