Couples de spin-orbite en vue d'applications aux mémoires cache

Abstract : They require smaller areas for bigger storage densities, non-volatility as well as reduced and shorter writing electrical currents. Magnetic Random Access Memory (MRAM) is one of the best candidates for the replacement of SRAM and DRAM. Moreover, the recent discovery of spin-orbit torques (SOT) may lead to a new technology called SOT-MRAM. These promising technologies combine non-volatility and good reliability but many challenges still need to be taken up.This thesis aims at switching magnetization by spin-orbit torques with ultra-fast current pulse and at reducing their amplitude. This preliminary work should enable one to proof the concept of SOT-MRAM written with short current pulses and low electrical consumption to write a memory cell.To do so, we studied Ta-CoFeB-MgO-based memory cells for which we verified current dependencies on pulse lengths and external magnetic field. Then we proved the ultrafast writing of a SOT-MRAM cell with pulses as short as 400 ps. Next, we focused on reducing the critical writing currents by SOT with the application of an electric field. We showed that magnetic anisotropy can be modulated by an electricfield. If it can be lowered while a current pulse is injected through the tantalum track, we observed a reduction of the critical current density for the switching of the CoFeB magnetization. Those results are very promising for the development of SOT-MRAM and encourage one to delve deeper into this study. The magnetization switching mechanism seems to be a nucleation followed by propagations of magneticdomain walls. This assumption is based on many physical tendencies we observed and also on numerical simulations.
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Claire Hamelin. Couples de spin-orbite en vue d'applications aux mémoires cache. Matière Condensée [cond-mat]. Université Grenoble Alpes, 2016. Français. ⟨NNT : 2016GREAY061⟩. ⟨tel-01588369⟩

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