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Développement d’amplificateurs sur substrats flexibles à partir de transistors organiques à effet de champ

Abstract : Organic field effect transistors (OFETs) have huge potential in the applications of future electronics, such as flexible circuits and displays or medical application. However, stability and performances of OFETs need to be improved, so as to reach the real market applications.First objective of this work is to realize air stable OFETs with state of the art performance. To that end, several approaches have been applied with special focus on process simplification. Small molecule, dinaphtho[2,3-b:2',3‘-f]thieno[3,2-b]thiophene (DNTT) has been chosen as the active layer for all devices studies. Metal electrodes in combination with oxide interfacial layers were investigated to decrease the contact resistance, which not only affects eventual mobility that can be achieved but also complicates circuit design. A systematic study was carried out to fabricate high capacitance dielectric layer and passivating the surface with proper interfacial layers. These approaches allowed to obtain high performance OFET on plastic substrate with high mobility (2.4cm2.V-1.s-1), high current on/off ratio (> 106), low threshold voltage and no hysteresis As the second objective, OFET devices were simulated using GoldenGate (with Cadence Virtuoso® environment) to derive relevant parameters, which helped to design amplifier circuit. Finally, passive component (resistance) has been developed and final circuit was realized and characterized.
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Submitted on : Wednesday, August 23, 2017 - 5:02:05 PM
Last modification on : Wednesday, April 1, 2020 - 1:24:25 AM


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  • HAL Id : tel-01576704, version 1


Geoffroy Houin. Développement d’amplificateurs sur substrats flexibles à partir de transistors organiques à effet de champ. Electronique. Université de Bordeaux, 2017. Français. ⟨NNT : 2017BORD0588⟩. ⟨tel-01576704⟩



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