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Contribution à l'étude de la fiabilité des MOSFETs en carbure de silicium

Abstract : Recent years have seen SiC MOSFET reach the industrial market. This type of device is particularly adapted to the design of power electronics equipment with high efficiency and high reliability capable to operate in high ambient temperature. Nevertheless the question of the SiC MOSFET reliability has to be addressed prior to considering the implementation of such devices in an aeronautic application. The failure mechanisms linked to the gate oxide of the SiC MOSFET have for a long time prevented the introduction of the device. In this manuscript we propose to study the reliability of the first generation of SiC MOSFET. First, the mechanism known as the Time–Dependent Dielectric Breakdown is studied through experimental results extracted from literature. Our study shows the successful application of a Weibull law to model the time-to-failure distribution extracted from the accelerated tests. The results show also a significant improvement of the SiC MOSFET structure with respect to this phenomenon. In a second step, the impact of the threshold voltage instability is quantified through accelerated tests known as High Temperature Gate Bias. The collected degradation data are modeled using a non-homogeneous Gamma process. This approach allows taking into account the variability between devices tested under the same conditions. Acceleration factors have been proposed with respect to temperature and gate voltage. Eventually the study delivers a primary estimation of the remaining useful lifetime of the SiC MOSFET in a typical aeronautic application.
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Thomas Santini. Contribution à l'étude de la fiabilité des MOSFETs en carbure de silicium. Electronique. Université de Lyon, 2016. Français. ⟨NNT : 2016LYSEI021⟩. ⟨tel-01495657⟩

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