Carrier profiling of ZnO nanowire structures by scanning capacitance microscopy and scanning spreading resistance microscopy

Abstract : Based on atomic force microscope (AFM), scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) have demonstrated high efficiency for two dimensional (2D) electrical characterizations of Si semiconductors at nanoscale and then have been extensively employed in Si-based structures/devices before being extended to the study of some other semiconductor materials. However, ZnO, a representative of the third generation semiconductor material, being considered a promising candidate for future devices in many areas, especially in opto-electronic area, has rarely been addressed. Recently, extensive research interests have been attracted by ZnO NWs for future devices such as LED, UV laser and sensor. Therefore, a good understanding of electrical properties of the NWs is in need. In this context, this thesis work is dedicated to the 2D electrical characterization of ZnO NWs with the focus of carrier profiling on this kind of nanostructure in the effort of their p-type doping. For this purpose, a planarization process has been developed for the NWs structure in order to obtain an appropriate sample surface and perform SCM/SSRM measurements on the top of the NWs. For quantitative analysis, Ga doped ZnO multilayer staircase structures were developed serving as calibration samples. Finally, residual carrier concentrations inside the CBD and MOCVD grown ZnO NWs are determined to be around 3×10^18 cm^-3 and 2×10^18 cm^-3, respectively. The results from SCM/SSRM characterization have been compared with that from macroscopic C-V measurements on collective ZnO NWs and the differences are discussed. In addition to carrier profiling on NWs structure, applications of SCM/SSRM on some other ZnO-based nanostructures are also investigated including ZnO:Sb films, ZnO/ZnO:Sb core-shell NWs structure, ZnO/ZnMgO core-multishell coaxial heterostructures.
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Lin Wang. Carrier profiling of ZnO nanowire structures by scanning capacitance microscopy and scanning spreading resistance microscopy. Electronics. Université de Lyon, 2016. English. ⟨NNT : 2016LYSEI031⟩. ⟨tel-01494694⟩

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