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Conception d’un modulateur électro-optique Mach Zehnder 100 Gbits/s NRZ sur silicium

Abstract : The sustained development of software applications including mass storage, intensive computing and broadband communication, motivates the emergence of novel communication technologies. On one hand, communications through metallic interconnections approach their inherent limitations in term of energy, area and cost per bit. On the other hand, conventional hybrid photonics, based on discrete 2D/3D photonic assemblies of III-V photonic devices, cannot be integrated. The rising silicon photonic technology, thanks to its high level of integration, overcomes the shortcomings of the two previous approaches and promises a low cost solution allowing close proximity integration of photonics with electronics.The design of a very high data rate electro-optic modulator on silicon is reported in this thesis manuscript. In a first section, the state of the art of optic systems is presented with a focus on the main technological challenges limiting performances. Then, a silicon based topology is introduced to achieve a 100 Gbs Mach Zehnder modulator. It was implemented with the STMicroelectronics PIC25G technology. The driver of this modulator was designed with the 55 nm SiGe BiCMOS technology of the same founder. The demonstrator introduced in this work offer a 100 Gbs data rate with an NRZ modulation on a single optical channel. For this configuration, this prototype provides a data rate beyond the state of the art (for a single optical transmission path) with an energy per bit of 80 pJ/bit.
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Submitted on : Tuesday, January 24, 2017 - 11:36:38 AM
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  • HAL Id : tel-01444701, version 1


Jérémie Prades. Conception d’un modulateur électro-optique Mach Zehnder 100 Gbits/s NRZ sur silicium. Electronique. Université de Bordeaux, 2016. Français. ⟨NNT : 2016BORD0205⟩. ⟨tel-01444701⟩



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