Semi-conducteurs 2D pour l’électronique flexible : évaluation du potentiel du MoS2 monocouche en tant que matériau de canal

Abstract : This PhD thesis is dedicated to the assessment of the potential of monolayers of molybdenum disulfide (MoS2) as a N-type channel material for flexible electronics. This 2D semiconductor of atomic-scale thickness is chemically stable, mechanically robust and has a direct bandgap of 1.9 eV. This work includes the synthesis of MoS2 monolayers by Chemical Vapor Deposition (CVD) and the characterization of this material. The MoS2 monolayers were integrated in air-stable N-type transistors. The study highlighted the impact on the device performances of both the environment and the resistances at the MoS2/metal interfaces. Electronic mobilities of 20 cm²/(V.s) in combination with ION/IOFF ratios > 106 were achieved. These performances allowed integrating MoS2 monolayers in flexible transistors. This work was combined with the study of electrografted organic ultrathin films used as gate dielectrics and their integration in MoS2 transistors. This thesis shows that MoS2 monolayers are a viable option for flexible electronics operating at low bias, in particular when they are associated with ultrathin organic dielectrics.
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  • HAL Id : tel-01428418, version 1

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Hugo Casademont. Semi-conducteurs 2D pour l’électronique flexible : évaluation du potentiel du MoS2 monocouche en tant que matériau de canal. Micro et nanotechnologies/Microélectronique. Université Paris-Saclay, 2016. Français. ⟨NNT : 2016SACLS365⟩. ⟨tel-01428418⟩

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