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Conception et réalisation de commutateurs RF à base de matériaux à transition de phase (PTM) et à changement de phase (PCM)

Abstract : This research work focuses on the design and realization of RF switches based on the integration of new materials such as vanadium dioxide (VO2), Ge2Sb2Te5 (GST) and GeTe chalcogenides alloys. The operating principle of these devices is based on the resistivity change presented by these materials. VO2 exhibits a Metal-Insulator transition (MIT) around 68°C for which the material changes from an insulating state (high resistivity) to a metallic one (low resistivity). The MIT transition can be triggered in different ways (thermally, electrically and optically) with low switching time. GST and GeTe alloys have the particularity to be reversibly switched between a high resistive-amorphous state to low resistive-crystalline state, under a specific heat treatment. Thanks to the non-volatile resistivity change presented by these materials, GST/GeTe-based switches are able to operate in bistable mode. The fabricated devices exhibit good electrical performances (insertion loss and isolation) over a broadband. The aim of our work is to propose an alternative solution to conventional technologies (semiconductors and RF-MEMS), to design RF switches that can be used afterward in the design of reconfigurable devices (filters, antennas).
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Amine Mennai. Conception et réalisation de commutateurs RF à base de matériaux à transition de phase (PTM) et à changement de phase (PCM). Electronique. Université de Limoges, 2016. Français. ⟨NNT : 2016LIMO0035⟩. ⟨tel-01357082⟩

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