M. S. Bahat, GaN-Based HEMTs for High Voltage Operation, 2012.

F. Schwierz, Wide Bandgap and Other Non-III-V RF Transistors : Trends and Prospects, ASU Tempe, vol.24, 2004.

E. Johnson, Physical limitations on frequency and power parameters of transistors, IRE International Convention Record, pp.27-34, 1958.
DOI : 10.1109/IRECON.1965.1147520

B. J. Baliga, Power semiconductor device figure of merit for high-frequency applications, IEEE Electron Device Letters, vol.10, issue.10, pp.455-457, 1989.
DOI : 10.1109/55.43098

G. Chicot, Field effect in boron doped diamond, These de doctorat, 2013.
URL : https://hal.archives-ouvertes.fr/tel-01062250

A. Vescan, P. Gluche, W. Ebert, and E. Kohn, High-temperature, high-voltage operation of pulse-doped diamond MESFET, IEEE Electron Device Letters, vol.18, issue.5, pp.222-224, 1997.
DOI : 10.1109/55.568772

P. C. Chao, K. Chu, and C. Creamer, A New High Power GaN-on-Diamond HEMT with Low- Temperature Bonded Substrate Technology, CS MANTECH Conference, 2013.

H. L. Störmer, R. Dingle, A. C. Gossard, W. Wiegmann, and M. D. Sturge, Two-dimensional electron gas at a semiconductor-semiconductor interface, Solid State Communications, vol.29, issue.10, pp.705-709, 1979.
DOI : 10.1016/0038-1098(79)91010-X

W. Wang, P. Lin, C. Lin, C. Lin, Y. Chan et al., Performance enhancement by using the n/sup +/-GaN cap layer and gate recess technology on the AlGaN-GaN HEMT fabrication, IEEE Electron Device Letters, vol.26, issue.1, pp.5-7, 2005.
DOI : 10.1109/LED.2004.840395

D. S. Lee, X. Gao, S. Guo, and T. Palacios, InAlN/GaN HEMTs With AlGaN Back Barriers, IEEE Electron Device Letters, vol.32, issue.5, pp.617-619, 2011.
DOI : 10.1109/LED.2011.2111352

T. Palacios, A. Chakraborty, S. Heikman, S. Keller, S. P. Denbaars et al., AlGaN/GaN high electron mobility transistors with InGaN back-barriers, IEEE Electron Device Letters, vol.27, issue.1, pp.13-15, 2006.
DOI : 10.1109/LED.2005.860882

Y. Wang, N. S. Yu, D. M. Deng, F. Sun, and K. M. Lau, Improved breakdown voltage of AlGaN/GaN HEMTs grown on Si substrates using partially Mg-doped GaN buffer layer by MOCVD, Science China Physics, Mechanics and Astronomy, vol.26, issue.12, pp.1578-1581, 2010.
DOI : 10.1007/s11433-010-4081-3

Y. C. Choi, L. F. Eastman, and M. Pophristic, Effects of an Fe-doped GaN Buffer in AlGaN/GaN Power HEMTs on Si Substrate, 2006 European Solid-State Device Research Conference, pp.282-285, 2006.
DOI : 10.1109/ESSDER.2006.307693

U. K. Mishra, L. Shen, T. E. Kazior, and Y. Wu, GaN-Based RF Power Devices and Amplifiers, Proc. IEEE, pp.287-305, 2008.
DOI : 10.1109/JPROC.2007.911060

J. Joh and J. A. Del-alamo, Mechanisms for Electrical Degradation of GaN High-Electron Mobility Transistors, 2006 International Electron Devices Meeting, pp.1-4, 2006.
DOI : 10.1109/IEDM.2006.346799

J. Kuzmik, Power electronics on InAlN/(In)GaN: Prospect for a record performance, IEEE Electron Device Letters, vol.22, issue.11, pp.510-512, 2001.
DOI : 10.1109/55.962646

C. Mion, Investigation of the thermal properties of gallium nitride using the three omega technique, 2006.

W. Lu, V. Kumar, R. Schwindt, E. Piner, and I. Adesida, A comparative study of surface passivation on AlGaN/GaN HEMTs, Solid-State Electronics, vol.46, issue.9, pp.1441-1444, 2002.
DOI : 10.1016/S0038-1101(02)00089-8

P. Altuntas, F. Lecourt, A. Cutivet, N. Defrance, E. Okada et al., Power Performance at 40 GHz of AlGaN/GaN High-Electron Mobility Transistors Grown by Molecular Beam Epitaxy on Si(111) Substrate, IEEE Electron Device Letters, vol.36, issue.4, pp.303-305, 2015.
DOI : 10.1109/LED.2015.2404358

O. Patard, R. Aubry, J. C. Jacquet, S. Piotrowicz, O. Jardel et al., Improvement of the passivation process for high performance InAlN, presented at the Workshop on Compound Semiconductor Devices and Integrated Circuits (WOCSDICE), pp.57-58, 2015.

S. Tirelli, L. Lugani, D. Marti, J. Carlin, N. Grandjean et al., AlInN-Based HEMTs for Large-Signal Operation at 40 GHz, IEEE Transactions on Electron Devices, vol.60, issue.10, pp.3091-3098, 2013.
DOI : 10.1109/TED.2013.2262136

A. Soltani, J. Gerbedoen, Y. Cordier, D. Ducatteau, M. Rousseau et al., Power Performance of AlGaN/GaN High-Electron-Mobility Transistors on (110) Silicon Substrate at 40 GHz, IEEE Electron Device Letters, vol.34, issue.4, pp.490-492, 2013.
DOI : 10.1109/LED.2013.2244841
URL : https://hal.archives-ouvertes.fr/hal-00809856

J. Cheron, M. Campovecchio, R. Quere, D. Schwantuschke, R. Quay et al., Highefficiency power amplifier MMICs in 100 nm GaN technology at Ka-band frequencies, Microwave Conference (EuMC), pp.1463-1466, 2013.
URL : https://hal.archives-ouvertes.fr/hal-00911618

F. Medjdoub, M. Zegaoui, B. Grimbert, D. Ducatteau, N. Rolland et al., First Demonstration of High-Power GaN-on-Silicon Transistors at 40 GHz, IEEE Electron Device Letters, vol.33, issue.8, pp.1168-1170, 2012.
DOI : 10.1109/LED.2012.2198192
URL : https://hal.archives-ouvertes.fr/hal-00786912

D. Marti, S. Tirelli, A. R. Alt, J. Roberts, and C. R. Bolognesi, 150-GHz Cutoff Frequencies and 2-W/mm Output Power at 40 GHz in a Millimeter-Wave AlGaN/GaN HEMT Technology on Silicon, IEEE Electron Device Letters, vol.33, issue.10, pp.1372-1374, 2012.
DOI : 10.1109/LED.2012.2204855

C. F. Campbell, High Power GaN MMIC, W03-6 : Gallium Nitride : Advances in DC and RF Power

J. J. Zhou, X. Dong, C. Kong, Y. C. Kong, C. J. Ren et al., Developing the Ka-band GaN power HEMT devices, Proceedings of 2012 5th Global Symposium on Millimeter-Waves, pp.617-620
DOI : 10.1109/GSMM.2012.6314414

K. Takagi, K. Matsushita, K. Masuda, S. Nakanishi, T. Soejima et al., GaN HEMTs with pre-match for Ka-band with 18W, Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International, pp.1-4, 2011.

K. Takagi, K. Matsushita, Y. Kashiwabara, K. Masuda, S. Nakanishi et al., Developing GaN HEMTs for Ka-Band with 20W, 2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), pp.1-4, 2010.
DOI : 10.1109/CSICS.2010.5619660

A. Crespo, M. M. Bellot, K. D. Chabak, J. K. Gillespie, G. H. Jessen et al., High-Power Ka-Band Performance of AlInN/GaN HEMT With 9.8-nm-Thin Barrier, IEEE Electron Device Letters, vol.31, issue.1, pp.2-4, 2010.
DOI : 10.1109/LED.2009.2034875

J. S. Moon, D. Wong, M. Hu, P. Hashimoto, M. Antcliffe et al., 55% PAE and High Power Ka-Band GaN HEMTs With Linearized Transconductance via <formula formulatype="inline"><tex Notation="TeX">$\hbox{n}+$</tex></formula> GaN Source Contact Ledge, IEEE Electron Device Letters, vol.29, issue.8, pp.834-837, 2008.
DOI : 10.1109/LED.2008.2000792

T. Palacios, A. Chakraborty, S. Rajan, C. Poblenz, S. Keller et al., High-power AlGaN/GaN HEMTs for Ka-band applications, IEEE Electron Device Letters, vol.26, issue.11, pp.781-783, 2005.
DOI : 10.1109/LED.2005.857701

Y. Wu, M. Moore, A. Saxler, T. Wisleder, U. K. Mishra et al., 8-watt GaN HEMTs at millimeter-wave frequencies, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., pp.583-585, 2005.
DOI : 10.1109/IEDM.2005.1609414

M. Micovic, A. Kurdoghlian, H. P. Moyer, P. Hashimoto, A. Schmitz et al., GaN MMIC technology for microwave and millimeter-wave applications, IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05., p.3, 2005.
DOI : 10.1109/CSICS.2005.1531801

J. S. Moon, S. Wu, D. Wong, I. Milosavljevic, A. Conway et al., Gate-recessed AlGaN-GaN HEMTs for high-performance millimeter-wave applications, IEEE Electron Device Letters, vol.26, issue.6, pp.348-350, 2005.
DOI : 10.1109/LED.2005.848107

S. C. Binari, P. B. Klein, and T. E. Kazior, Trapping effects in GaN and SiC microwave FETs, Proc. IEEE, pp.1048-1058, 2002.
DOI : 10.1109/JPROC.2002.1021569

A. P. Zhang, L. B. Rowland, E. B. Kaminsky, V. Tilak, J. C. Grande et al., Correlation of device performance and defects in AlGaN/GaN high-electron mobility transistors, Journal of Electronic Materials, vol.47, issue.5, pp.388-394, 2003.
DOI : 10.1007/s11664-003-0163-6

V. Gavryushin, Deep Level Saturation Spectroscopy, International Journal of Optics, vol.28, issue.12, pp.1-16, 2012.
DOI : 10.1134/S0021364006010061

D. V. Lang, Deep???level transient spectroscopy: A new method to characterize traps in semiconductors, Journal of Applied Physics, vol.45, issue.7, pp.3023-3032, 1974.
DOI : 10.1063/1.1663719

R. Vetury, Polarization Induced 2DEG in AlGaN/GaN HEMTs : On the origin, DC and transient characterization, 2000.

J. Teyssier, Caractérisation en impulsions des transistors microondes : application à la modélisation non linéaire pour la c.a.o. des circuits, 1994.

C. Charbonniaud, Caractérisation et modélisation électrothermique non linéaire de transistors à effet de champ GaN pour l'amplification de puissance micro-onde, 2005.

A. R. Arehart, A. C. Malonis, C. Poblenz, Y. Pei, J. S. Speck et al., Next generation defect characterization in nitride HEMTs, physica status solidi (c), vol.8, issue.7-8, pp.2242-2244, 2011.
DOI : 10.1002/pssc.201000955

P. Audren, J. M. Dumas, M. P. Favennec, and S. Mottet, Étude des pièges dans les transistors à haute mobilité électronique sur GaAs à l'aide de la méthode dite dè`relaxation isotherme

J. Joh and J. A. Del-alamo, A Current-Transient Methodology for Trap Analysis for GaN High Electron Mobility Transistors, IEEE Transactions on Electron Devices, vol.58, issue.1, pp.132-140, 2011.
DOI : 10.1109/TED.2010.2087339

A. Chantre, G. Vincent, and D. Bois, Deep-level optical spectroscopy in GaAs, Physical Review B, vol.23, issue.10, p.5335, 1981.
DOI : 10.1103/PhysRevB.23.5335

D. L. Losee, Admittance spectroscopy of deep impurity levels: ZnTe Schottky barriers, Applied Physics Letters, vol.21, issue.2, pp.54-56, 2003.
DOI : 10.1063/1.1654276

J. A. Reynoso-hernandez, L. Escotte, R. Plana, and J. Graffeuil, Deep level characterisation in GaAs FETs by means of the frequency dispersion of the output impedance, Electronics Letters, vol.31, issue.8, pp.677-678, 1995.
DOI : 10.1049/el:19950465

W. Kruppa, S. C. Binari, and K. Doverspike, Low-frequency dispersion characteristics of GaN HFETs, Electronics Letters, vol.31, issue.22, pp.1951-1952, 1995.
DOI : 10.1049/el:19951298

A. Paccagnella, C. Tedesco, C. Canali, A. Cetronio, and C. Lanzieri, Frequency dispersion of transconductance: a tool to characterise deep levels in III-V FETs, Electronics Letters, vol.28, issue.22, pp.2107-2109, 1992.
DOI : 10.1049/el:19921351

A. Rafei, G. Callet, G. Mouginot, J. Faraj, S. Laurent et al., DC (10 Hz) to RF (40 GHz) output conduction extraction by S-parameters measurements for in-depth characterization of AlInN/GaN HEMTS, focusing on low frequency dispersion effects, Microwave Integrated Circuits Conference (EuMIC), pp.5-8, 2011.
URL : https://hal.archives-ouvertes.fr/hal-00701112

O. Jardel, S. Laurent, T. Reveyrand, R. Quéré, P. Nakkala et al., Modeling of trap induced dispersion of large signal dynamic Characteristics of GaN HEMTs, 2013 IEEE MTT-S International Microwave Symposium Digest (MTT), 2013.
DOI : 10.1109/MWSYM.2013.6697576
URL : https://hal.archives-ouvertes.fr/hal-00911581

G. A. Umana-membreno, J. M. Dell, B. D. Nener, L. Faraone, G. Parish et al., Low-temperature shallow-trap related output-admittance frequency dispersion in AlGaN/GaN MODFETs, 1998 Conference on Optoelectronic and Microelectronic Materials and Devices. Proceedings (Cat. No.98EX140), pp.252-255, 1998.
DOI : 10.1109/COMMAD.1998.791634

S. D. Nsele, L. Escotte, J. Tartarin, S. Piotrowicz, and S. L. Delage, Broadband Frequency Dispersion Small-Signal Modeling of the Output Conductance and Transconductance in AlInN/GaN HEMTs, IEEE Transactions on Electron Devices, vol.60, issue.4, pp.1372-1378, 2013.
DOI : 10.1109/TED.2013.2248158
URL : https://hal.archives-ouvertes.fr/hal-00859123

S. Choi and M. B. Das, Origin and modeling of the frequency dependent output conductance in microwave GaAs MESFET's with buried p layer, IEEE Transactions on Electron Devices, vol.41, issue.10, pp.1725-1733, 1994.
DOI : 10.1109/16.324580

C. Camacho-peã±alosa and C. S. Aitchison, Modelling frequency dependence of output impedance of a microwave MESFET at low frequencies, Electronics Letters, vol.21, issue.12, pp.528-529, 1985.
DOI : 10.1049/el:19850373

J. M. Golio, M. G. Miller, G. N. Maracas, and D. A. Johnson, Frequency-dependent electrical characteristics of GaAs MESFETs, IEEE Transactions on Electron Devices, vol.37, issue.5, pp.1217-1227, 1990.
DOI : 10.1109/16.108182

. Agilent, Agilent E5061B Network , Configuration Guide

J. Tartarin, G. Soubercaze-pun, J. Grondin, L. Bary, J. Mimila-arroyo et al., Generation-Recombination Defects In AlGaN/GaN HEMT On SiC Substrate, Evidenced By Low Frequency Noise Measurements And SIMS Characterization, AIP Conference Proceedings, p.163, 2007.
DOI : 10.1063/1.2759658
URL : https://hal.archives-ouvertes.fr/hal-01343422

O. Mitrofanov, Poole-Frenkel electron emission from the traps in AlGaN/GaN transistors, Journal of Applied Physics, vol.95, issue.11, p.6414, 2004.
DOI : 10.1063/1.1719264

J. Horn, D. E. Root, and G. Simpson, GaN Device Modeling with X-Parameters, 2010 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), pp.1-4, 2010.
DOI : 10.1109/CSICS.2010.5619691

S. Y. Lee, B. A. Cetiner, H. Torpi, S. J. Cai, J. Li et al., An X-band GaN HEMT power amplifier design using an artificial neural network modeling technique, IEEE Trans. Electron Devices, vol.48, issue.3, pp.495-501, 2001.

G. Dambrine, A. Cappy, F. Heliodore, and E. Playez, A new method for determining the FET small-signal equivalent circuit, IEEE Transactions on Microwave Theory and Techniques, vol.36, issue.7, pp.1151-1159, 1988.
DOI : 10.1109/22.3650

C. Azizi, J. Graffeuil, and P. , Le transistor ?? effet de champ ?? grille Schottky au GaAs : analyse et mod??le math??matique du fonctionnement avec la grille en polarisation directe, Revue de Physique Appliqu??e, vol.16, issue.6, pp.303-315, 1981.
DOI : 10.1051/rphysap:01981001606030300

Z. Ouarch, Caractérisation et modélisation des effets de pièges et thermiques des transistors à effet de champ sur AsGa: application à la simulation de la dynamique lente des circuits non linéaires micro-ondes, Thèse de doctorat Faculté des sciences et techniques, 1999.

F. and D. Groote, Mesures de formes d'ondes temporelles en impulsions : application à la caractérisation de transistors micro-ondes de forte puissance, 2007.

J. Faraj and J. Teyssier, Développement et validation d'un banc de caractérisation de transistors de puissance en mode temporel impulsionnel, 2010.

O. Jardel, F. De-groote, T. Reveyrand, J. Jacquet, C. Charbonniaud et al., An Electrothermal Model for AlGaN/GaN Power HEMTs Including Trapping Effects to Improve Large-Signal Simulation Results on High VSWR, IEEE Transactions on Microwave Theory and Techniques, vol.55, issue.12, pp.2660-2669, 2007.
DOI : 10.1109/TMTT.2007.907141
URL : https://hal.archives-ouvertes.fr/hal-00198570

S. Forestier, T. Gasseling, P. Bouysse, R. Quere, and J. M. Nebus, A new nonlinear capacitance model of millimeter wave power PHEMT for accurate AM/AM-AM/PM simulations, IEEE Microwave and Wireless Components Letters, vol.14, issue.1, pp.43-45, 2004.
DOI : 10.1109/LMWC.2003.820635

M. Rudolph, C. Fager, and D. E. Root, Nonlinear Transistor Model Parameter Extraction Techniques, 2011.
DOI : 10.1017/CBO9781139014960

M. Wang and K. J. Chen, Kink Effect in AlGaN/GaN HEMTs Induced by Drain and Gate Pumping, IEEE Electron Device Letters, vol.32, issue.4, pp.482-484, 2011.
DOI : 10.1109/LED.2011.2105460

P. Nakkala, Pulsed I-V and RF characterization and modeling of AIGaN HEMTs and Graphene FETs
URL : https://hal.archives-ouvertes.fr/tel-01175525

G. Berghoff, E. Bergeault, B. Huyart, and L. Jallet, Automated characterization of HF power transistors by source-pull and multiharmonic load-pull measurements based on six-port techniques, IEEE Transactions on Microwave Theory and Techniques, vol.46, issue.12, pp.2068-2073, 1998.
DOI : 10.1109/22.739284

T. Gasseling and J. Nébus, Caractérisation non linéaire avancée de transistors de puissance pour la validation de leur modèle CAO, 2003.

K. S. Boutros, W. B. Luo, Y. Ma, G. Nagy, and J. Hacker, 5W GaN MMIC for Millimeter-Wave Applications, 2006 IEEE Compound Semiconductor Integrated Circuit Symposium, pp.93-95, 2006.
DOI : 10.1109/CSICS.2006.319922

M. Van-heijningen, F. E. Van-vliet, R. Quay, F. Van-raay, and M. Seelmann-eggebert, Design and Analysis of a 34 dBm Ka-Band GaN High Power Amplifier MMIC, 2006 European Microwave Integrated Circuits Conference, pp.75-78, 2006.
DOI : 10.1109/EMICC.2006.282754

M. Micovic, A. Kurdoghlian, H. P. Moyer, P. Hashimoto, A. Schmitz et al., Ka-band MMIC power amplifier in GaN HFET technology, 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535), pp.1653-1656, 2004.
DOI : 10.1109/MWSYM.2004.1338903

A. M. Darwish, K. Boutros, B. Luo, B. D. Huebschman, E. Viveiros et al., AlGaN/GaN <formula><tex>$Ka$</tex></formula>-Band 5-W MMIC Amplifier, IEEE Transactions on Microwave Theory and Techniques, vol.54, issue.12, pp.4456-4463, 2006.
DOI : 10.1109/TMTT.2006.883599

C. F. Campbell, M. Kao, and S. Nayak, High efficiency Ka-band power amplifier MMICs fabricated with a 0, Microwave Symposium Digest (MTT), 2012 IEEE MTT-S International, pp.1-3, 2012.

C. F. Campbell, Y. Liu, M. Kao, and S. Nayak, High efficiency Ka-band Gallium Nitride power amplifier MMICs, 2013 IEEE International Conference on Microwaves, Communications, Antennas and Electronic Systems (COMCAS 2013), pp.1-5, 2013.
DOI : 10.1109/COMCAS.2013.6685246

K. Kong, M. Kao, and S. Nayak, Miniaturization of Ka-Band High Power Amplifier by 0.15 ??m GaN MMIC Technology, 2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), pp.1-4, 2014.
DOI : 10.1109/CSICS.2014.6978569

A. M. Darwish, J. X. Qiu, E. A. Viveiros, and H. A. Hung, Improved linearity of power amplifier GaN MMIC for Ka-band SATCOM, 2012 IEEE/MTT-S International Microwave Symposium Digest, pp.1-3, 2012.
DOI : 10.1109/MWSYM.2012.6259625

S. Din, M. Wojtowicz, and M. Siddiqui, High power and high efficiency Ka band power amplifier, 2015 IEEE MTT-S International Microwave Symposium
DOI : 10.1109/MWSYM.2015.7166776

C. Y. Ng, K. Takagi, T. Senju, K. Matsushita, H. Sakurai et al., A 20-watt Ka-band GaN high power amplifier MMIC, Microwave Conference (EuMC), pp.1348-1351, 2014.

O. Jardel, G. Callet, D. Lancereau, J. Jacquet, T. Reveyrand et al., First demonstration of AlInN/GaN HEMTs amplifiers at K band, 2012 IEEE/MTT-S International Microwave Symposium Digest, pp.1-3, 2012.
DOI : 10.1109/MWSYM.2012.6259551
URL : https://hal.archives-ouvertes.fr/hal-00707893

G. Mouginot, Potentialités des transistors HEMTs AlGaN-GaN pour l'amplification large bande de fréquence : Effets limitatifs et modélisation, Thèse de doctorat : électronique des hautes fréquences et optoélectronique, 2011.

A. Platzker, W. Struble, and K. T. Hetzler, Instabilities diagnosis and the role of K in microwave circuits, 1993 IEEE MTT-S International Microwave Symposium Digest, pp.1185-1188, 1993.
DOI : 10.1109/MWSYM.1993.277082

S. Colangeli, R. Cleriti, D. Palombini, and E. Limiti, On the unconditional stability of N-port networks, Microwave Conference (EuMC), pp.1520-1523, 2014.

A. Anakabe, N. Ayllón, J. M. Collantes, A. Mallet, G. Soubercaze-pun et al., Automatic pole-zero identification for multivariable large-signal stability analysis of RF and microwave circuits, Microwave Conference (EuMC), pp.477-480, 2010.

J. M. Collantes, N. Otegi, A. Anakabe, N. Ayllon, A. Mallet et al., Monte-Carlo stability analysis of microwave amplifiers, WAMICON 2011 Conference Proceedings, pp.1-6, 2011.
DOI : 10.1109/WAMICON.2011.5872888