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Développement de la croissance de graphène par CVD sur cobalt, analyses morphologique et structurale

Abstract : Graphene, a two-dimensional material composed of carbon atoms arranged in hexagonal lattice, has outstanding physical and chemical properties, i.e. its exceptional electronic mobility. This material is thus promising for many applications in the future. However, if chemical vapour deposition (CVD) is a very promising method for large-scale graphene growth , it is still very challenging to control graphene characteristics. The objective of this experimental work is both to develop graphene growth by CVD at atmospheric pressure and moderate temperature (600°C / 850°C) on cobalt and to analyse grown graphene with complementary techniques to determine its physical, chemical and structural characteristics.A study of the influence of different synthesis parameters on graphene characteristics (number of layer, coverage, defect and crystallite size) has been achieved. By combining the use of commercial cobalt foils with growth temperature of 850°C, a high cooling rate (100°C/min) and a low carbon supply, a continuous graphene film of three layers has been synthesized. Moreover, by measuring carbon distribution in the cobalt substrate after graphene growth, we have highlighted a carbon concentration about 100 times higher than carbon solubility in cobalt at 850 °C.The influence of cobalt on graphene structure was studied by X-ray diffraction using a synchrotron beamline. Prior to experiments, graphene was grown by CVD at atmospheric pressure on cobalt thin film. The structural study of this system has revealed a turbostratic stacking of graphene and two different orientations for graphene domains with respect to cobalt.The study of the graphene/cobalt system is completed by a multi-technique and localised characterisation of graphene which enables to analyse a same area of graphene when it is on cobalt and then after transfer on SiO2 substrate. Sample characterisation is based on microscopy and Raman spectroscopy. The influence of cobalt substrate on grown graphene, especially on mechanical strain and electronic doping, is highlighted.
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Submitted on : Monday, May 16, 2016 - 1:02:15 AM
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  • HAL Id : tel-01316232, version 1


Olivier Duigou. Développement de la croissance de graphène par CVD sur cobalt, analyses morphologique et structurale. Matériaux. Université Paris Saclay (COmUE), 2015. Français. ⟨NNT : 2015SACLS101⟩. ⟨tel-01316232⟩



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