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OTFTs de type N à base de semiconducteurs π-conjugués : fabrication, performance et stabilité

Abstract : The main goal of this present work consists in the fabrication and optimization of N type organic field effect transistors. Bottom Gate Bottom Contact transistors are performed at low temperature T<120°C. Three different electro-deficient organic molecules are thermally evaporated and used as active layer. OTFTs based on LPP core molecule present low field effect mobility around 10-5cm2/V.s. The optimization study investigated on deposition parameters of this molecule on OTFTs performances does not allow improving this mobility. Moreover gate bias stress measurements reveal important instabilities related to this molecule. Indenfluorene derivatives core (IF) based OTFTs show better performances. Field effect mobility µFE=2.1x10-4 cm2/V is reached using IF(CN2)2 meta in optimized deposition conditions and µFE=1x10-2 cm2/V.s is obtained using IF(CN2)2 para after annealing treatment. The investigated gate bias stress study highlights the good electrical stability of IF(CN2)2 para based OTFTs. Temperature measurements allow us studying the charge transport phenomenon in these indenofluorene derivatives. Fabricated N-type OTFTs are used to perform a first electronic circuit that consists in a logic gate (invertor).Finally this low temperature process led us to achieve OTFTs devices on flexible substrates (PEN).
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Submitted on : Thursday, May 12, 2016 - 5:48:07 PM
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  • HAL Id : tel-01315195, version 1


Sarah Bebiche. OTFTs de type N à base de semiconducteurs π-conjugués : fabrication, performance et stabilité. Electronique. Université Rennes 1, 2015. Français. ⟨NNT : 2015REN1S105⟩. ⟨tel-01315195⟩



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