Dépôt chimique (CVD/ALD) assisté par plasma et intégration de Ti(Al)N et Ta(Al)N pour les métaux de grille sub-20nm

Abstract : For the sub-20 nm technological nodes metal conformity requirements are beyond the possibilities of the currently used PVD deposition technique. CVD techniques, more specifically MOCVD and ALD, are identified as the best techniques for metal deposition. For metal-gate application, titanium and tantalum carbo-nitrides alloys are considered as the most promising. In this work, a detailed review of MOCVD and ALD deposition mechanisms and plasma influence on the deposited material is carried out. First, process windows for successful tuning of the metal properties are examined. Plasma impact on the metal and the inherent reaction mechanisms are also highlighted with the help of plasma characterisation. Then great importance is given to the integration of these metals, by careful study of the interactions taking place at the interfaces. Correlations between physico-chemical properties and electrical behavior of the metal/high-k dielectric stack are introduced thanks to XPS characterisation. Finally, aluminium doping of MOCVD TiN and TaN is considered for n-mos and p-mos gate characteristics achievement. By comparison of the properties and behaviours of Al doped metals deposited by PVD and MOCVD, diffusion mechanisms are proposed to explain the role of Al in the observed changes.
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Fabien Piallat. Dépôt chimique (CVD/ALD) assisté par plasma et intégration de Ti(Al)N et Ta(Al)N pour les métaux de grille sub-20nm. Micro et nanotechnologies/Microélectronique. Université de Grenoble, 2014. Français. ⟨NNT : 2014GRENT015⟩. ⟨tel-01281188⟩

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