Electrons and phonons in graphene : electron-phonon coupling, screening and transport in the field effect setup

Abstract : Understanding the transport properties of two-dimensional crystals doped by field effect is a conceptual milestone for tomorrow's nanoelectronics. In this thesis we develop first-principles methods to investigate electron-phonon interactions, screening and phonon-limited transport in graphene. To overcome the limitations of existing plane-wave ab initio packages, originally devised for three-dimensional periodic solids, we truncate the Coulomb interaction in the third direction and isolate the 2D system from its periodic images. This is implemented in density-functional perturbation theory to calculate charge density responses and phonon spectra in a two-dimensional framework. We use those methods to develop a quantitative model of electron-phonon coupling for graphene in the field effect transistor configuration. We find that the coupling of electrons to acoustic phonons is dominated by the unscreened gauge field, which we compute with full inclusion of electron-electron interactions at the GW level. Our simulations of the static screening properties of graphene validate analytical models and reveal that the deformation potential is strongly screened, such that its contribution to acoustic phonon scattering is negligible. We find a small but finite linear coupling with out-of-plane phonons. By solving the Boltzmann transport equation we obtain the phonon-limited resistivity. Below room temperature, our results confirm the role of acoustic phonons and a 15% increase of the ab initio gauge field parameter leads to an excellent quantitative agreement with experiment. Above room-temperature, we point to the importance of the coupling with intrinsic optical phonons.
Document type :
Theses
Complete list of metadatas

Cited literature [106 references]  Display  Hide  Download

https://tel.archives-ouvertes.fr/tel-01274687
Contributor : Abes Star <>
Submitted on : Tuesday, February 16, 2016 - 10:22:06 AM
Last modification on : Tuesday, May 14, 2019 - 11:07:20 AM
Long-term archiving on : Tuesday, May 17, 2016 - 10:05:33 AM

File

2015PA066393.pdf
Version validated by the jury (STAR)

Identifiers

  • HAL Id : tel-01274687, version 1

Citation

Thibault Sohier. Electrons and phonons in graphene : electron-phonon coupling, screening and transport in the field effect setup. Physics [physics]. Université Pierre et Marie Curie - Paris VI, 2015. English. ⟨NNT : 2015PA066393⟩. ⟨tel-01274687⟩

Share

Metrics

Record views

875

Files downloads

6804