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Contribution à la caractérisation de composants sub-terahertz

Abstract : The continuous improvement in Silicon technologies allows SiGeC (Silicon-Germanium-Carbon) heterojunction bipolar transistors (HBT) to compete with III-V components for millimeter wave and sub-THz (below 300GHz) applications. The technology development cycle (characterization, modeling, design and fabrication) needs several iterations resulting in high costs. Furthermore, the measurement methodologies need to be re-assessed and modified to address higher measurement frequencies. In order to reduce the number of iterations and to allow reliable measurement in the sub-THz band, the characterization procedure has been revisited.First, a description and investigation of the measurement instrument (VNA) has been made. After exploring all possible calibration methods, the best candidate for an “on-wafer” calibration for the sub-THz frequency range has been selected. Then, after analyzing the limits of the chosen calibration method (Thru-Reflect-Line: TRL), workarounds are proposed, by modification of the errors coefficients calculation and by changing the standards used during the calibration process. At last, a study concerning the de-embedding methods is carried out. It is shown, that using two new standards helps to reduce the over-compensation of parasitic components.
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Submitted on : Friday, February 5, 2016 - 10:23:26 AM
Last modification on : Wednesday, December 4, 2019 - 3:23:38 PM
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  • HAL Id : tel-01269635, version 1


Manuel Potéreau. Contribution à la caractérisation de composants sub-terahertz. Electronique. Université de Bordeaux, 2015. Français. ⟨NNT : 2015BORD0243⟩. ⟨tel-01269635⟩



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