R. P. Feynman, There's plenty of room at the bottom [data storage], Journal of Microelectromechanical Systems, vol.1, issue.1, pp.60-66, 1992.
DOI : 10.1109/84.128057

G. E. Moore, Progress in digital integrated electronics, Electron Devices Meeting, pp.11-13, 1975.

M. Lundstrom, APPLIED PHYSICS: Enhanced: Moore's Law Forever?, Science, vol.299, issue.5604, pp.210-211, 2003.
DOI : 10.1126/science.1079567

W. M. Arden, The International Technology Roadmap for Semiconductors???Perspectives and challenges for the next 15 years, Current Opinion in Solid State and Materials Science, vol.6, issue.5, pp.371-377, 2002.
DOI : 10.1016/S1359-0286(02)00116-X

J. D. Meindl, Q. Chen, and J. A. Davis, Limits on Silicon Nanoelectronics for Terascale Integration, Science, vol.293, issue.5537, pp.2044-2049, 2001.
DOI : 10.1126/science.293.5537.2044

P. H. Siegel, Terahertz technology, IEEE Transactions on Microwave Theory and Techniques, vol.50, issue.3, pp.910-928, 2002.
DOI : 10.1109/22.989974

M. Tonouchi, Cutting-edge terahertz technology, Nature Photonics, vol.77, issue.2, pp.97-105, 2007.
DOI : 10.1038/nphoton.2007.3

M. Nagel, P. Haring-bolivar, M. Brucherseifer, H. Kurz, A. Bosserhoff et al., Integrated THz technology for label-free genetic diagnostics, Applied Physics Letters, vol.80, issue.1, p.154, 2002.
DOI : 10.1063/1.1428619

R. M. Woodward, B. E. Cole, V. P. Wallace, R. J. Pye, D. D. Arnone et al., Terahertz pulse imaging in reflection geometry of human skin cancer and skin tissue, Physics in Medicine and Biology, vol.47, issue.21, pp.3853-3863, 2002.
DOI : 10.1088/0031-9155/47/21/325

B. Fischer, M. Hoffmann, H. Helm, R. Wilk, F. Rutz et al., Terahertz time-domain spectroscopy and imaging of artificial RNA, Optics Express, vol.13, issue.14, pp.5205-5215, 2005.
DOI : 10.1364/OPEX.13.005205

D. M. Mittleman, J. Cunningham, M. C. Nuss, and M. Geva, Noncontact semiconductor wafer characterization with the terahertz Hall effect, Applied Physics Letters, vol.71, issue.1, p.16, 1997.
DOI : 10.1063/1.119456

H. Zhong, J. Xu, X. Xie, T. Yuan, R. Reightler et al., Nondestructive defect identification with terahertz time-of-flight tomography, IEEE Sensors Journal, vol.5, issue.2, pp.203-208, 2005.
DOI : 10.1109/JSEN.2004.841341

D. L. Woolard, J. O. Jensen, and R. J. Hwu, Terahertz Science and Technology for Military and Security Applications, World Scientific, vol.46, 2007.
DOI : 10.1142/6608

K. Kawase, Y. Ogawa, Y. Watanabe, and H. Inoue, Non-destructive terahertz imaging of illicit drugs using spectral fingerprints, Optics Express, vol.11, issue.20, pp.2549-2554, 2003.
DOI : 10.1364/OE.11.002549

N. Kukutsu, A. Hirata, M. Yaita, K. Ajito, H. Takahashi et al., Toward practical applications over 100 GHz, Microwave Symposium Digest (MTT) IEEE MTT-S International, pp.1134-1137, 2010.

C. Kao, Z. Huang, and . Wang, Terahertz Terabit Wireless Communication, IEEE Microwave Magazine, vol.12, issue.4, pp.108-116, 2011.

U. R. Pfeiffer and E. O. Jefors, Terahertz imaging with CMOS/BiCMOS process technologies, 2010 Proceedings of ESSCIRC, pp.52-60, 2010.
DOI : 10.1109/ESSCIRC.2010.5619773

R. Piesiewicz, T. Kleine-ostmann, N. Krumbholz, D. Mittleman, M. Koch et al., Short-Range Ultra-Broadband Terahertz Communications: Concepts and Perspectives, IEEE Antennas and Propagation Magazine, vol.49, issue.6, pp.24-39, 2007.
DOI : 10.1109/MAP.2007.4455844

E. Seok, D. Shim, C. Mao, R. Han, S. Sankaran et al., Progress and Challenges Towards Terahertz CMOS Integrated Circuits, IEEE Journal of Solid-State Circuits, vol.45, issue.8, pp.1554-1564, 2010.
DOI : 10.1109/JSSC.2010.2049793

URL : https://hal.archives-ouvertes.fr/hal-00546334

J. V. Siles and J. Grajal, Physics-Based Design and Optimization of Schottky Diode Frequency Multipliers for Terahertz Applications, IEEE Transactions on Microwave Theory and Techniques, vol.58, issue.7, pp.1933-1942, 2010.
DOI : 10.1109/TMTT.2010.2050103

Q. Hu, B. S. Williams, S. Kumar, H. Callebaut, S. Kohen et al., Resonant-phonon-assisted THz quantum-cascade lasers with metal???metal waveguides, Semiconductor Science and Technology, vol.20, issue.7, pp.228-236, 2005.
DOI : 10.1088/0268-1242/20/7/013

H. Ito, F. Nakajima, T. Furuta, and T. Ishibashi, Continuous THz-wave generation using antenna-integrated uni-travelling-carrier photodiodes, Semiconductor Science and Technology, vol.20, issue.7, pp.191-198, 2005.
DOI : 10.1088/0268-1242/20/7/008

A. Masahiro, S. Safumi, and K. Naomichi, Resonant Tunneling Diodes for Sub- Terahertz and Terahertz Oscillators, Jpn J Appl Phys, vol.47, issue.6, pp.4375-4384, 2008.

A. J. Miller, Micromachined antenna-coupled uncooled microbolometers for terahertz imaging arrays, Terahertz for Military and Security Applications II, pp.18-24, 2004.
DOI : 10.1117/12.543236

T. Yasui, A. Nishimura, T. Suzuki, K. Nakayama, and S. Okajima, Detection system operating at up to 7THz using quasioptics and Schottky barrier diodes, Review of Scientific Instruments, vol.77, issue.6, p.66102, 2006.
DOI : 10.1063/1.2206770

S. Ariyoshi, C. Otani, A. Dobroiu, H. Sato, K. Kawase et al., Terahertz imaging with a direct detector based on superconducting tunnel junctions, Applied Physics Letters, vol.88, issue.20, p.203503, 2006.
DOI : 10.1063/1.2204842

A. Al-attar, T. H. Hassibi, and . Lee, A 77GHz monolithic IMPATT transmitter in standard CMOS technology, IEEE MTT-S International Microwave Symposium Digest, 2005., 2005.
DOI : 10.1109/MWSYM.2005.1517000

J. Rieh and D. Kim, An Overview of Semiconductor Technologies and Circuits for Terahertz Communication Applications, 2009 IEEE Globecom Workshops, pp.1-6, 2009.
DOI : 10.1109/GLOCOMW.2009.5360683

P. M. Schroter and A. Chakravorty, Compact Hierarchical Bipolar Transistor Modeling With Hicum, World Scientific, vol.0, 2010.
DOI : 10.1142/7257

M. S. Gupta, Power gain in feedback amplifiers, a classic revisited, IEEE Transactions on Microwave Theory and Techniques, vol.40, issue.5, pp.864-879, 1992.
DOI : 10.1109/22.137392

S. Lee, B. Jagannathan, S. Narasimha, A. Chou, N. Zamdmer et al., Record RF performance of 45-nm SOI CMOS Technology, 2007 IEEE International Electron Devices Meeting, pp.255-258, 2007.
DOI : 10.1109/IEDM.2007.4418916

B. Geynet, P. Chevalier, B. Vandelle, F. Brossard, N. Zerounian et al., SiGe HBTs featuring fT 400GHz at room temperature, IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp.121-124, 2008.

D. Kim and J. A. Del-alamo, 30-nm InAs PHEMTs with fT = 644 GHz and fmax = 681 GHz, IEEE Electron Device Letters, vol.31, issue.8, pp.806-808, 2010.

W. Snodgrass, W. Hafez, N. Harff, and M. Feng, Pseudomorphic InP/InGaAs Heterojunction Bipolar Transistors (PHBTs) Experimentally Demonstrating fT = 765 GHz at 25°C Increasing to fT = 845 GHz at -55°C, Electron Devices Meeting IEDM '06. International, pp.1-4, 2006.

C. Jan, P. Bai, S. Biswas, M. Buehler, Z. Chen et al., A 45nm low power system-on-chip technology with dual gate (logic and I/O) high-k/metal gate strained silicon transistors, 2008 IEEE International Electron Devices Meeting, pp.1-4, 2008.
DOI : 10.1109/IEDM.2008.4796772

B. Heinemann, R. Barth, D. Bolze, J. Drews, G. G. Fischer et al., SiGe HBT technology with fT/fmax of 300GHz/500GHz and 2.0 ps CML gate delay, Electron Devices Meeting (IEDM), pp.30-35, 2010.

R. Lai, X. B. Mei, W. R. Deal, W. Yoshida, Y. M. Kim et al., Sub 50 nm InP HEMT Device with Fmax Greater than 1 THz, 2007 IEEE International Electron Devices Meeting, pp.609-611, 2007.
DOI : 10.1109/IEDM.2007.4419013

V. Jain, E. Lobisser, A. Baraskar, B. J. Thibeault, M. J. Rodwell et al., InGaAs/InP DHBTs in a Dry-Etched Refractory Metal Emitter Process Demonstrating Simultaneous <formula formulatype="inline"><tex Notation="TeX">$f_{\tau}/f_{\max} \sim \hbox{430/800}\ \hbox{GHz}$</tex></formula>, IEEE Electron Device Letters, vol.32, issue.1, pp.24-26, 2011.
DOI : 10.1109/LED.2010.2084069

J. Rieh, Y. Oh, D. Yoon, N. Kim, D. Kim et al., An overview of challenges and current status of Si-based terahertz monolithic integrated circuits, 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology, pp.1-4
DOI : 10.1109/ICSICT.2012.6467961

G. Gao, M. Wang, X. Gui, and H. Morkoc, Thermal design studies of high-power heterojunction bipolar transistors, IEEE Transactions on Electron Devices, vol.36, issue.5, pp.854-863, 1989.

H. Ru-cker, B. Heinemann, and A. Fox, SiGe BiCMOS Technologies for Applications above 100 GHz, 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), pp.1-4, 2012.

P. Chevalier, T. Lacave, E. Canderle, A. Pottrain, Y. Carminati et al., Scaling of SiGe BiCMOS Technologies for Applications above 100 GHz, 2012 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), pp.1-4
DOI : 10.1109/CSICS.2012.6340083

E. O-jefors, J. Grzyb, Y. Zhao, B. Heinemann, B. Tillack et al., A 820GHz SiGe chipset for terahertz active imaging applications, Solid-State Circuits Conference Digest of Technical Papers (ISSCC), pp.224-226, 2011.

M. I. Dyakonov and M. S. Shur, Plasma wave electronics: novel terahertz devices using two dimensional electron fluid, IEEE Transactions on Electron Devices, vol.43, issue.10, pp.1640-1645, 1996.
DOI : 10.1109/16.536809

D. Harame, A. Joseph, P. Cheng, V. Jain, and R. Camillo-castillo, (Keynote) History and Future Directions in SiGe HBT BiCMOS Technology and Its Applications, ECS Transactions, vol.49, issue.1, pp.3-14, 2012.
DOI : 10.1149/04901.0003ecst

A. Pottrain, T. Lacave, D. Ducatteau, D. Gloria, P. Chevalier et al., High Power Density Performances of SiGe HBT From BiCMOS Technology at W-Band, IEEE Electron Device Letters, vol.33, issue.2, pp.182-184, 2012.
DOI : 10.1109/LED.2011.2177631

URL : https://hal.archives-ouvertes.fr/hal-00788168

S. P. Voinigescu, A. Tomkins, E. Dacquay, P. Chevalier, J. Hasch et al., A Study of SiGe HBT Signal Sources in the 220-330-GHz Range, IEEE Journal of Solid-State Circuits, 2013.

M. Weis, C. Majek, A. K. Sahoo, C. Maneux, O. Mazouffre et al., Optimized Ring Oscillator With 1.65-ps Gate Delay in a SiGe:C HBT Technology, IEEE Electron Device Letters, vol.34, issue.10, pp.1214-1216, 2013.
DOI : 10.1109/LED.2013.2277550

U. R. Pfeiffer, E. Ojefors, A. Lisauskas, and H. G. Roskos, Opportunities for silicon at mmWave and Terahertz frequencies, 2008 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp.149-156, 2008.
DOI : 10.1109/BIPOL.2008.4662734

E. Johnson, Physical limitations on frequency and power parameters of transistors, IRE International Convention Record, pp.27-34, 1965.
DOI : 10.1109/IRECON.1965.1147520

S. P. Gaur, Performance limitations of silicon bipolar transistors, IEEE Journal of Solid-State Circuits, vol.14, issue.2, pp.337-343, 1979.
DOI : 10.1109/JSSC.1979.1051183

M. Schroter, G. Wedel, B. Heinemann, C. Jungemann, J. Krause et al., Physical and Electrical Performance Limits of High-Speed SiGeC HBTs&#x2014;Part I: Vertical Scaling, IEEE Transactions on Electron Devices, vol.58, issue.11, pp.3687-3696, 2011.
DOI : 10.1109/TED.2011.2163722

M. Schroter, J. Krause, N. Rinaldi, G. Wedel, B. Heinemann et al., Physical and Electrical Performance Limits of High-Speed Si GeC HBTs&#x2014;Part II: Lateral Scaling, IEEE Transactions on Electron Devices, vol.58, issue.11, pp.3697-3706, 2011.
DOI : 10.1109/TED.2011.2163637

L. L. Liou and B. Bayraktaroglu, Thermal stability analysis of AlGaAs/GaAs heterojunction bipolar transistors with multiple emitter fingers, IEEE Transactions on Electron Devices, vol.41, issue.5, pp.629-636
DOI : 10.1109/16.285008

K. Puttaswamy and G. H. Loh, Thermal Herding: Microarchitecture Techniques for Controlling Hotspots in High-Performance 3D-Integrated Processors, 2007 IEEE 13th International Symposium on High Performance Computer Architecture, pp.193-204, 2007.
DOI : 10.1109/HPCA.2007.346197

A. Chantre, P. Chevalier, T. Lacave, G. Avenier, M. Buczko et al., Pushing conventional SiGe HBT technology towards 'Dotfive' terahertz, Microwave Integrated Circuits Conference (EuMIC), pp.21-24, 2010.
URL : https://hal.archives-ouvertes.fr/hal-00550010

P. Chevalier, T. F. Meister, B. Heinemann, S. Van-huylenbroeck, W. Liebl et al., Towards THz SiGe HBTs, 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp.57-65, 2011.
DOI : 10.1109/BCTM.2011.6082749

URL : https://hal.archives-ouvertes.fr/hal-00574425

D. Vasileska, K. Raleva, and S. M. Goodnick, Modeling heating effects in nanoscale devices: the??present??and??the??future, Journal of Computational Electronics, vol.118, issue.2, pp.66-93, 2008.
DOI : 10.1007/s10825-008-0254-y

D. L. Harame, J. H. Comfort, J. D. Cressler, E. F. Crabbe, J. Y. Sun et al., Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits, IEEE Transactions on Electron Devices, vol.42, issue.3, pp.455-468, 1995.
DOI : 10.1109/16.368039

D. L. Harame, J. H. Comfort, J. D. Cressler, E. F. Crabbe, J. Y. Sun et al., Si/SiGe epitaxial-base transistors. II. Process integration and analog applications, IEEE Transactions on Electron Devices, vol.42, issue.3, pp.469-482, 1995.
DOI : 10.1109/16.368043

D. J. Walkey, T. J. Smy, C. Reimer, M. Schröter, H. Tran et al., Modeling thermal resistance in trench-isolated bipolar technologies including trench heat flow, Solid-State Electronics, vol.46, issue.1, pp.7-17, 2002.
DOI : 10.1016/S0038-1101(01)00305-7

I. Marano, V. , and N. Rinaldi, Effectively modeling the thermal behavior of trench-isolated bipolar transistors Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Micro-Systems, EuroSimE 2008 -International Conference on Thermal, pp.1-8, 2008.

J. Rieh, J. Johnson, S. Furkay, D. Greenberg, G. Freeman et al., Structural dependence of the thermal resistance of trench-isolated bipolar transistors, Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, pp.100-103, 2002.
DOI : 10.1109/BIPOL.2002.1042896

G. Freeman, J. Rieh, Z. Yang, and F. Guarin, Reliability and performance scaling of very high speed SiGe HBTs, Microelectronics Reliability, vol.44, issue.3, pp.397-410, 2004.
DOI : 10.1016/j.microrel.2003.11.003

R. H. Winkler, Thermal properties of high-power transistors, IEEE Transactions on Electron Devices, vol.14, issue.5, pp.260-263
DOI : 10.1109/T-ED.1967.15939

W. Liu, Thermal coupling in 2-finger heterojunction bipolar transistors, IEEE Transactions on Electron Devices, vol.42, issue.6, pp.1033-1038, 1995.
DOI : 10.1109/16.387234

E. K. Mueller, Internal thermal feedback in four-poles especially in transistors, Proceedings of the IEEE, pp.924-930, 1964.

J. Andrews, C. Grens, and J. D. Cressler, The effects of layout variation on the thermal characteristics of SiGe HBTS, Proceedings of the Bipolar/BiCMOS Circuits and Technology Meeting, 2005., pp.50-53, 2005.
DOI : 10.1109/BIPOL.2005.1555199

A. Pawlak, M. Schroter, J. Krause, D. Céli, and N. Derrier, HICUM/2 v2.3 parameter extraction for advanced SiGe-heterojunction bipolar transistors, 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp.1-4, 2011.
DOI : 10.1109/BCTM.2011.6082780

R. Sisoc, From Radio Frequency to Millimeter Wave and THz Silicon System-On-Chip Technologies, Available: CATRENE UREKA Cluster , CT209

. Dotseven, Towards 0.7 THz Silicon/Germanium Heterojunction Bipolar Technology Available: EUFP7 funded IP, number 316755

G. Avenier, M. Diop, P. Chevalier, G. Troillard, N. Loubet et al., 0.13 <formula formulatype="inline"><tex Notation="TeX">$\mu$</tex> </formula>m SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications, IEEE Journal of Solid-State Circuits, vol.44, issue.9, pp.2312-2321, 2009.
DOI : 10.1109/JSSC.2009.2024102

P. Chevalier, F. Pourchon, T. Lacave, G. Avenier, Y. Campidelli et al., A conventional double-polysilicon FSA-SEG Si/SiGe:C HBT reaching 400 GHz fMAX, IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp.1-4, 2009.
URL : https://hal.archives-ouvertes.fr/hal-00474462

M. Schroter and A. Hicum, Scalable Physics-Based Compact Bipolar Transistor Model Available on the web, 2004.

M. Schroter, M. Friedrich, and H. Rein, A generalized integral charge-control relation and its application to compact models for silicon-based HBT's, IEEE Transactions on Electron Devices, vol.40, issue.11, pp.2036-2046
DOI : 10.1109/16.239746

J. Krause, Modellierung von Bipolartransistoren für Leistungsverstärker in HF-Anwendungen, Chair for Electron Devices and Integrated Circuits, 2008.

A. K. Sahoo, Electro-thermal Characterizations, Compact Modeling and TCAD based Device Simulations of advanced SiGe: C BiCMOS HBTs and of nanometric CMOS FET, 2012.

P. Aaen, J. A. Plá, and J. Wood, Modeling and Characterization of RF and Microwave Power FETs, 2007.
DOI : 10.1017/CBO9780511541124

G. F. Engen and R. W. Beatty, Microwave Reflectometer Techniques, IEEE Transactions on Microwave Theory and Techniques, vol.7, issue.3, pp.351-355, 1959.
DOI : 10.1109/TMTT.1959.1124587

J. Cusack, S. Perlow, and B. Perlman, Automatic Load Contour Mapping for Microwave Power Transistors, Microwave Symposium Digest, 1974 S-MTT International, pp.269-271, 1974.

M. Paggi, P. H. Williams, and J. M. Borrego, Nonlinear GaAs MESFET modeling using pulsed gate measurements, IEEE Transactions on Microwave Theory and Techniques, vol.36, issue.12, pp.1593-1597, 1988.
DOI : 10.1109/22.17389

J. F. Vidalou, J. F. Grossier, M. Chaumas, M. Camiade, P. Roux et al., Accurate nonlinear transistor modeling using pulsed S parameters measurements under pulsed bias conditions, 1991 IEEE MTT-S International Microwave Symposium Digest, pp.95-98, 1991.
DOI : 10.1109/MWSYM.1991.146933

F. Van-raay and G. Kompa, A new on-wafer large-signal waveform measurement system with 40 GHz harmonic bandwidth, 1992 IEEE Microwave Symposium Digest MTT-S, pp.1435-1438, 1992.
DOI : 10.1109/MWSYM.1992.188279

S. P. Voinigescu, E. Dacquay, V. Adinolfi, I. Sarkas, A. Balteanu et al., Characterization and Modeling of an SiGe HBT Technology for Transceiver Applications in the 100&#x2013;300-GHz Range, IEEE Transactions on Microwave Theory and Techniques, vol.60, issue.12, pp.4024-4034, 2012.
DOI : 10.1109/TMTT.2012.2224368

E. Canderle, P. Chevalier, A. Montagne, L. Moynet, G. Avenier et al., Extrinsic base resistance optimization in DPSA-SEG SiGe:C HBTs, 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), pp.1-4
DOI : 10.1109/BCTM.2012.6352650

URL : https://hal.archives-ouvertes.fr/hal-00801192

H. Tran, M. Schroter, D. J. Walkey, D. Marchesan, and T. J. Smy, Simultaneous extraction of thermal and emitter series resistances in bipolar transistors, Proceedings of the 1997 Bipolar/BiCMOS Circuits and Technology Meeting, pp.170-173
DOI : 10.1109/BIPOL.1997.647427

J. Rieh, D. Greenberg, B. Jagannathan, G. Freeman, and S. Subbanna, Measurement and modeling of thermal resistance of high speed SiGe heterojunction bipolar transistors, 2001 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems. Digest of Papers (IEEE Cat. No.01EX496), pp.110-113, 2001.
DOI : 10.1109/SMIC.2001.942350

R. Menozzi, J. Barrett, and P. Ersland, A new method to extract HBT thermal resistance and its temperature and power dependence, IEEE Transactions on Device and Materials Reliability, vol.5, issue.3, pp.595-601, 2005.
DOI : 10.1109/TDMR.2005.854210

R. C. Joy and E. S. Schlig, Thermal properties of very fast transistors, IEEE Transactions on Electron Devices, vol.17, issue.8, pp.586-594, 1970.
DOI : 10.1109/T-ED.1970.17035

R. M. Fox and S. Lee, Predictive modeling of thermal effects in BJTs, Proceedings of the 1991 Bipolar Circuits and Technology Meeting, pp.89-92, 1991.
DOI : 10.1109/BIPOL.1991.160963

D. T. Zweidinger, R. M. Fox, J. S. Brodsky, T. Jung, and S. Lee, Thermal impedance extraction for bipolar transistors, IEEE Transactions on Electron Devices, vol.43, issue.2, pp.342-346
DOI : 10.1109/16.481737

D. J. Walkey, T. J. Smy, D. Marchesan, H. Tran, C. Reimer et al., Extraction and modelling of thermal behavior in trench isolated bipolar structures, Proceedings of the 1999 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.99CH37024), pp.97-100, 1999.
DOI : 10.1109/BIPOL.1999.803535

C. Anghel, R. Gillon, and A. Ionescu, Self-Heating Characterization and Extraction Method for Thermal Resistance and Capacitance in HV MOSFETs, IEEE Electron Device Letters, vol.25, issue.3, pp.141-143, 2004.
DOI : 10.1109/LED.2003.821669

A. El-rafei, A. Saleh, R. Sommet, J. M. Nebus, and R. Quere, Experimental Characterization and Modeling of the Thermal Behavior of SiGe HBTs, IEEE Transactions on Electron Devices, vol.59, issue.7, pp.1921-1927, 2012.
DOI : 10.1109/TED.2012.2196765

URL : https://hal.archives-ouvertes.fr/hal-00917684

A. K. Sahoo, S. Fregonese, M. Weiß, B. Grandchamp, N. Malbert et al., Characterization of self-heating in Si???Ge HBTs with pulse, DC and AC measurements, Solid-State Electronics, vol.76, pp.13-18, 2012.
DOI : 10.1016/j.sse.2012.04.039

URL : https://hal.archives-ouvertes.fr/hal-00978797

O. Sevimli, A. E. Parker, A. P. Fattorini, and S. J. Mahon, Measurement and Modeling of Thermal Behavior in InGaP/GaAs HBTs, IEEE Transactions on Electron Devices, vol.60, issue.5, pp.1632-1639, 2013.
DOI : 10.1109/TED.2013.2254117

D. A. Frickey-between, S. , Z. , Y. , H. et al., Conversions between S, Z, Y, H, ABCD, and T parameters which are valid for complex source and load impedances, IEEE Transactions on Microwave Theory and Techniques, vol.42, issue.2, pp.205-211, 1994.
DOI : 10.1109/22.275248

S. Bruce, A. Trasser, M. Birk, A. Rydberg, and H. Schumacher, Extraction of thermal time constant in HBTs using small signal measurements, Electronics Letters, vol.33, issue.2, pp.165-167, 1997.
DOI : 10.1049/el:19970102

A. K. Sahoo, S. Fregonese, M. Weiss, N. Malbert, and T. Zimmer, Electrothermal characterization of Si-Ge HBTs with pulse measurement and transient simulation, Solid-State Device Research Conference (ESSDERC), 2011 Proceedings of the European, pp.239-242, 2011.
URL : https://hal.archives-ouvertes.fr/hal-00669428

B. Schaefer and M. Dunn, Pulsed measurements and modeling for electrothermal effects, Bipolar/BiCMOS Circuits and Technology Meeting Proceedings of the 1996, pp.110-117, 1996.

J. Teyssier, P. Bouysse, Z. Ouarch, D. Barataud, T. Peyretaillade et al., 40-GHz/150-ns versatile pulsed measurement system for microwave transistor isothermal characterization, IEEE Transactions on Microwave Theory and Techniques, vol.46, issue.12, pp.2043-2052, 1998.
DOI : 10.1109/22.739281

URL : https://hal.archives-ouvertes.fr/hal-01287610

A. Saleh, M. A. Chahine, T. Reveyrand, G. Neveux, D. Barataud et al., 40 ns pulsed I/V set-up and measurement method applied to InP HBT characterization and electro-thermal modeling, 2009 IEEE Radio Frequency Integrated Circuits Symposium, pp.401-404, 2009.
DOI : 10.1109/RFIC.2009.5135567

URL : https://hal.archives-ouvertes.fr/hal-00414091

M. Rickelt, H. Rein, and E. Rose, Influence of impact-ionization-induced instabilities on the maximum usable output voltage of Si-bipolar transistors, IEEE Transactions on Electron Devices, vol.48, issue.4, pp.774-783, 2001.
DOI : 10.1109/16.915725

A. K. Sahoo, S. Fregonese, M. Weiss, N. Malbert, and T. Zimmer, Electrothermal dynamic simulation and thermal spreading impedance modeling of Si-Ge HBTs, 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), pp.45-48, 2011.
URL : https://hal.archives-ouvertes.fr/hal-00669443

A. E. Parker and J. G. , Broad-band characterization of FET self-heating, IEEE Transactions on Microwave Theory and Techniques, vol.53, issue.7, pp.2424-2429, 2005.
DOI : 10.1109/TMTT.2005.850399

J. H. Vuolevi, T. Rahkonen, and J. P. Manninen, Measurement technique for characterizing memory effects in RF power amplifiers, IEEE Transactions on Microwave Theory and Techniques, vol.49, issue.8, pp.1383-1389, 2001.
DOI : 10.1109/22.939917

A. K. Sahoo, S. Fregonese, M. Weis, N. Malbert, and T. Zimmer, A Scalable Electrothermal Model for Transient Self-Heating Effects in Trench-Isolated SiGe HBTs, IEEE Transactions on Electron Devices, vol.59, issue.10, pp.2619-2625, 2012.
DOI : 10.1109/TED.2012.2209651

URL : https://hal.archives-ouvertes.fr/hal-00978803

J. M. Andrews, C. M. Grens, and J. D. Cressler, Compact Modeling of Mutual Thermal Coupling for the Optimal Design of SiGe HBT Power Amplifiers, IEEE Transactions on Electron Devices, vol.56, issue.7, pp.1529-1532, 2009.
DOI : 10.1109/TED.2009.2021365

C. J. Glassbrenner and G. A. Slack, Thermal Conductivity of Silicon and Germanium from 3??K to the Melting Point, Physical Review, vol.134, issue.4A, p.1058, 1964.
DOI : 10.1103/PhysRev.134.A1058

S. Inc, TCAD Sentaurus User Guide E-2010.12, 2010.

D. J. Walkey, T. J. Smy, R. G. Dickson, J. S. Brodsky, D. T. Zweidinger et al., Equivalent circuit modeling of static substrate thermal coupling using VCVS representation, IEEE Journal of Solid-State Circuits, vol.2, issue.9, pp.1198-1206, 2002.
DOI : 10.1109/JSSC.2002.801200

K. Fukahori and P. R. Gray, Computer simulation of integrated circuits in the presence of electrothermal interaction Solid-State Circuits, IEEE Journal, vol.11, issue.6, pp.834-846, 1976.

M. Pedram and S. Nazarian, Thermal Modeling, Analysis, and Management in VLSI Circuits: Principles and Methods, Proceedings of the IEEE, pp.1487-1501, 2006.
DOI : 10.1109/JPROC.2006.879797

M. Sokolich, A. R. Kramer, Y. K. Boegeman, and R. R. Martinez, Demonstration of sub-5 ps CML ring oscillator gate delay with reduced parasitic AlInAs/InGaAs HBT, IEEE Electron Device Letters, vol.22, issue.7, pp.309-311, 2001.
DOI : 10.1109/55.930674

B. Jagannathan, M. Meghelli, A. V. Rylyakov, R. A. Groves, A. K. Chinthakindi et al., A 4.2-ps ECL ring-oscillator in a 285-GHz f/sub MAX/ SiGe technology, IEEE Electron Device Letters, vol.23, issue.9, pp.541-543, 2002.
DOI : 10.1109/LED.2002.802654

H. Ru-cker, B. Heinemann, W. Winkler, R. Barth, J. Borngraber et al., A 0.13 <formula formulatype="inline"><tex Notation="TeX">$\mu{\hbox {m}}$</tex></formula> SiGe BiCMOS Technology Featuring f<formula formulatype="inline"> <tex Notation="TeX">$_{T} $</tex></formula>/f<formula formulatype="inline"> <tex Notation="TeX">$_{\max}$</tex></formula> of 240/330 GHz and Gate Delays Below 3 ps, IEEE Journal of Solid-State Circuits, vol.45, issue.9, pp.1678-1686, 2010.
DOI : 10.1109/JSSC.2010.2051475

M. Weiß, A. K. Sahoo, C. Maneux, and T. Zimmer, Rigorous investigations of a SiGe:C BiCMOS ring oscillator with optimized gate delay, Microwave Conference (GeMiC), 2012.

A. Fox, B. Heinemann, R. Barth, S. Marschmeyer, C. Wipf et al., SiGe:C HBT architecture with epitaxial external base, 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, pp.70-73, 2011.
DOI : 10.1109/BCTM.2011.6082751

V. N. Hoang, G. Doornbos, J. Michelon, A. Kumar, A. Nackaerts et al., Balancing Resistance and Capacitance of Signal Interconnects for Power Saving, 2007 IEEE International Interconnect Technology Conferencee, pp.126-128, 2007.
DOI : 10.1109/IITC.2007.382372

M. Alioto and G. Palumbo, Model and design of bipolar and MOS current-mode logic: CML, ECL and SCL digital circuits, 2005.

M. Alioto and G. Palumbo, Oscillation frequency in CML and ESCL ring oscillators, IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications, vol.48, issue.2, pp.210-214, 2001.
DOI : 10.1109/81.904885

M. Alioto and G. Palumbo, Highly accurate and simple models for CML and ECL gates, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol.18, issue.9, pp.1369-1375, 1999.
DOI : 10.1109/43.784127

N. Rinaldi, Thermal analysis of solid-state devices and circuits: an analytical approach, Solid-State Electronics, vol.44, issue.10, pp.1789-1798, 2000.
DOI : 10.1016/S0038-1101(00)00120-9

M. Weis, M. Santorelli, S. Ghosh, P. Chevalier, A. Chantre et al., Characterization of mutual heating inside a SiGe ring oscillator, 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012.
DOI : 10.1109/BCTM.2012.6352622

B. Leite, E. Kerherve, J. Begueret, and D. Belot, An Analytical Broadband Model for Millimeter-Wave Transformers in Silicon Technologies, IEEE Transactions on Electron Devices, vol.59, issue.3, pp.582-589, 2012.
DOI : 10.1109/TED.2011.2180909

URL : https://hal.archives-ouvertes.fr/hal-00651725

F. Grover, Inductance calculations, 2004.

M. Wurzer, T. F. Meister, H. Schafer, H. Knapp, J. Bock et al., 42 GHz static frequency divider in a Si/SiGe bipolar technology, 1997 IEEE International Solids-State Circuits Conference. Digest of Technical Papers, pp.122-123, 1997.
DOI : 10.1109/ISSCC.1997.585293

J. Altet, W. Claeys, S. Dilhaire, and A. Rubio, Dynamic Surface Temperature Measurements in ICs, Proceedings of the IEEE, pp.1519-1533, 2006.
DOI : 10.1109/JPROC.2006.879793

J. P. Brito and A. Rabaeijs, CMOS smart temperature sensors for RFID applications, 2013 26th Symposium on Integrated Circuits and Systems Design (SBCCI), 2013.
DOI : 10.1109/SBCCI.2013.6644858

S. A. Maas, Nonlinear Microwave and Rf Circuits, 2003.

M. De-matos, E. Kerherve, H. Lapuyade, J. Begueret, and Y. Deval, Millimeter-wave and power characterization for integrated circuits, 2009 EAEEIE Annual Conference, pp.1-4, 2009.
DOI : 10.1109/EAEEIE.2009.5335500

URL : https://hal.archives-ouvertes.fr/hal-00400858

N. Nenadovic, S. Mijalkovic, L. K. Nanver, L. K. Vandamme, V. Alessandro et al., Extraction and modeling of self-heating and mutual thermal coupling impedance of bipolar transistors, IEEE Journal of Solid-State Circuits, vol.39, issue.10, pp.1764-1772, 2004.
DOI : 10.1109/JSSC.2004.833766

C. Kim, N. Goto, and K. Honjo, Thermal behavior depending on emitter finger and substrate configurations in power heterojunction bipolar transistors, IEEE Transactions on Electron Devices, vol.45, issue.6, pp.1190-1195, 1998.

P. R. Gray, D. J. Hamilton, and D. Lieux, Analysis and design of temperature stabilized substrate integrated circuits, IEEE Journal of Solid-State Circuits, vol.9, issue.2, pp.61-69, 1974.
DOI : 10.1109/JSSC.1974.1050463

M. H. Nagel, M. J. Fonderie, G. C. Meijer, and J. H. Huijsing, Integrated 1 V thermal shutdown circuit, Electronics Letters, vol.28, issue.10, p.969, 1992.
DOI : 10.1049/el:19920615

S. Lehmann, M. Weiss, Y. Zimmermann, A. Pawlak, K. Aufinger et al., Scalable compact modeling for SiGe HBTs suitable for microwave radar applications, 2011 IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp.113-116, 2011.
DOI : 10.1109/SIRF.2011.5719339

R. R. Severino, J. B. Begueret, D. Belot, Y. Deval, and T. Taris, A SiGe:C BiCMOS LNA for 94GHz band applications, 2010 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2010.
DOI : 10.1109/BIPOL.2010.5668051

URL : https://hal.archives-ouvertes.fr/hal-00517064

A. K. Sahoo, M. Weiß, S. Fregonese, N. Malbert, and T. Zimmer, Transient electro-thermal characterization of Si???Ge heterojunction bipolar transistors, Solid-State Electronics, vol.74, pp.77-84, 2012.
DOI : 10.1016/j.sse.2012.04.015

URL : https://hal.archives-ouvertes.fr/hal-00978809

A. K. Sahoo, S. Fregonese, M. Weiß, B. Grandchamp, N. Malbert et al., Characterization of self-heating in Si???Ge HBTs with pulse, DC and AC measurements, Solid-State Electronics, vol.76, pp.13-18, 2012.
DOI : 10.1016/j.sse.2012.04.039

URL : https://hal.archives-ouvertes.fr/hal-00978797

A. K. Sahoo, S. Fregonese, M. Weiß, N. Malbert, and T. Zimmer, A Scalable Electrothermal Model for Transient Self-Heating Effects in Trench-Isolated SiGe HBTs, IEEE Transactions on Electron Devices, vol.59, issue.10, pp.2619-2625, 2012.
DOI : 10.1109/TED.2012.2209651

URL : https://hal.archives-ouvertes.fr/hal-00978803

M. Weiß, S. Fregonese, M. Santorelli, A. K. Sahoo, C. Maneux et al., Pulsed I(V) &#x2014; pulsed RF measurement system for microwave device characterization with 80ns/45GHz, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC), pp.74-82, 2013.
DOI : 10.1109/ESSDERC.2012.6343365

T. Chantre and . Zimmer, Optimized Ring Oscillator With 1.65-ps Gate Delay in a SiGe:C HBT Technology International Conferences, IEEE Electron Device Letters, vol.34, pp.1214-1216, 2013.
URL : https://hal.archives-ouvertes.fr/hal-00906390

S. Lehmann, Y. Weiß, . Zimmermann, . Pawlak, M. Aufinger et al., Scalable compact modeling for SiGe HBTs suitable for microwave radar applications, 2011 IEEE 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2011.
DOI : 10.1109/SIRF.2011.5719339

A. K. Sahoo, S. Fregonese, M. Weiß, N. Malbert, and T. Zimmer, Electrothermal characterization of Si-Ge HBTs with pulse measurement and transient simulation, European Solid-State Device Research Conference (ESSDERC), 2011.
URL : https://hal.archives-ouvertes.fr/hal-00669428

A. K. Sahoo, S. Fregonese, M. Weiß, N. Malbert, and T. Zimmer, Electrothermal dynamic simulation and thermal spreading impedance modeling of Si-Ge HBTs, 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2011.
URL : https://hal.archives-ouvertes.fr/hal-00669443

M. Weiß, A. K. Sahoo, C. Maneux, and T. Zimmer, Rigorous investigations of a SiGe:C BiCMOS ring oscillator with optimized gate delay, German Microwave Conference (GeMiC), 2012.

M. Weiß, S. Fregonese, M. Santorelli, A. K. Sahoo, C. Maneux et al., Pulsed I(V) &#x2014; pulsed RF measurement system for microwave device characterization with 80ns/45GHz, 2012 Proceedings of the European Solid-State Device Research Conference (ESSDERC), 2012.
DOI : 10.1109/ESSDERC.2012.6343365

M. Weiß, M. Santorelli, S. Ghosh, P. Chevalier, A. Chantre et al., Characterization of mutual heating inside a SiGe ring oscillator, 2012 IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2012.
DOI : 10.1109/BCTM.2012.6352622

M. Weiß, A. K. Sahoo, C. Raya, S. Ghosh, M. Santorelli et al., Characterization of intra-device mutual thermal coupling in multi finger SiGe: C HBTs, IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC), 2013.

A. K. Sahoo, S. Fregonese, M. Weiß, C. Maneux, N. Malbert et al., Impact of Back-end-of-line on Thermal Impedance in SiGe HBTs A Scalable Model for Temperature Dependent Thermal Resistance of SiGe HBTs, 18th International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013.

M. Workshops, C. Weiß, C. Majek, T. Maneux, F. M. Zimmer-crolles et al., Impact of process variation on the circuit performance (RO / LNA)Ring Oscillator: Simulation versus MeasurementOn pulsed RF measurementsElectro-thermal device characterization and modelling, HiCuM Workshop BipAk BCTM, 2010.