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Caractérisation électrique d’hétérostructures AlGaN/GaN pour des applications de puissance

Abstract : This PhD is part of the development of HEMT power transistor based on galliumnitride at the CEA. Due to their high electron mobility, high breakdown _eld and goodthermal conductivity, AlGaN/GaN HEMT are very promising devices for power electronic applications.The goal of this PhD is, using electrical characterization, to increase the knowledge ofthe AlGaN/GaN material prior to the fabrication of transistors. First, through measurements ofthe resistance of the electron gas located at the AlGaN/GaN interface, a trapping phenomenonwas evidenced in the material. Then, in order to set a production follow-through of AlGaN/GaNon Si wafers , a method of measuring the sheet resistance of a AlGaN/GaN stack without thefabrication of contacts was developed and patented. Finally, on HEMT transistors fabricatedusing di_erent epitaxies, a detailed study of the sheet resistance, the mobility and the sheetcarrier density in and out of the gated area was carried out.
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https://tel.archives-ouvertes.fr/tel-01235460
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Submitted on : Monday, November 30, 2015 - 11:34:07 AM
Last modification on : Friday, October 23, 2020 - 5:03:22 PM
Long-term archiving on: : Tuesday, March 1, 2016 - 12:21:20 PM

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LEHMANN_2015_archivage.pdf
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  • HAL Id : tel-01235460, version 1

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STAR | CEA | DRT | LETI | CEA-GRE

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Jonathan Lehmann. Caractérisation électrique d’hétérostructures AlGaN/GaN pour des applications de puissance. Micro et nanotechnologies/Microélectronique. Université Grenoble Alpes, 2015. Français. ⟨NNT : 2015GREAT081⟩. ⟨tel-01235460⟩

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