J. Kolar and T. Friedli, The Essence of Three-Phase PFC Rectifier Systems—Part I, IEEE Transactions on Power Electronics, vol.28, issue.1, pp.176-198, 2013.
DOI : 10.1109/TPEL.2012.2197867

M. Hartmann, H. Ertl, and J. Kolar, On the Tradeoff Between Input Current Quality and Efficiency of High Switching Frequency PWM Rectifiers, IEEE Transactions on Power Electronics, vol.27, issue.7, pp.3137-3149, 2012.
DOI : 10.1109/TPEL.2011.2179563

J. Rodriguez, M. Rivera, J. Kolar, and P. Wheeler, A Review of Control and Modulation Methods for Matrix Converters, IEEE Transactions on Industrial Electronics, vol.59, issue.1, pp.58-70, 2012.
DOI : 10.1109/TIE.2011.2165310

J. Kolar, F. Krismer, Y. Lobsiger, J. Muhlethaler, T. Nussbaumer et al., Extreme efficiency power electronics, Integrated Power Electronics Systems (CIPS), 2012 7th International Conference on, pp.1-22, 2012.

S. Ujita, Y. Kinoshita, H. Umeda, T. Morita, S. Tamura et al., A compact GaN-based DC-DC converter IC with high-speed gate drivers enabling high efficiencies, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), pp.51-54, 2014.
DOI : 10.1109/ISPSD.2014.6855973

F. C. Lee and Q. Li, High-Frequency Integrated Point-of-Load Converters: Overview, IEEE Transactions on Power Electronics, vol.28, issue.9, pp.4127-4136, 2013.
DOI : 10.1109/TPEL.2013.2238954

K. Wong, W. Chen, X. Liu, C. Zhou, and K. J. Chen, GaN smart power IC technology, physica status solidi (b), vol.37, issue.7, pp.1732-1734, 2010.
DOI : 10.1002/pssb.200983453

S. Ji, D. Reusch, and F. C. Lee, High-Frequency High Power Density 3-D Integrated Gallium-Nitride-Based Point of Load Module Design, IEEE Transactions on Power Electronics, vol.28, issue.9, pp.4216-4226, 2013.
DOI : 10.1109/TPEL.2012.2235859

C. Raynaud, D. Tournier, H. Morel, and D. Planson, Comparison of high voltage and high temperature performances of wide bandgap semiconductors for vertical power devices, Diamond and Related Materials, vol.19, issue.1, pp.1-6, 2010.
DOI : 10.1016/j.diamond.2009.09.015

URL : https://hal.archives-ouvertes.fr/hal-00476195

H. Umezawa, M. Nagase, Y. Kato, and S. Shikata, High temperature application of diamond power device, Diamond and Related Materials, vol.24, pp.201-205, 2012.
DOI : 10.1016/j.diamond.2012.01.011

J. Everts, J. Das, J. Van-dan-keybus, M. Germain, and J. Driesen, GaN-based power transistors for future power electronic converters, Young Researchers Symposium 2010 on Smart Sustainable Power Delivery : Proceedings, 2010.

S. Rashid, A. Tajani, D. Twitchen, L. Coulbeck, F. Udrea et al., Numerical Parameterization of Chemical-Vapor-Deposited (CVD) Single-Crystal Diamond for Device Simulation and Analysis, IEEE Transactions on Electron Devices, vol.55, issue.10, pp.2744-2756, 2008.
DOI : 10.1109/TED.2008.2003225

S. J. Rashid, L. Coulbeck, A. Tajani, M. Brezeanu, A. Garraway et al., Numerical and experimental analysis of single crystal diamond Schottky barrier diodes, Proceedings of The 17th International Symposium on Power Semiconductor Devices and ICs, pp.315-318, 2005.

M. Brezeanu, T. Butler, N. Rupesinghe, S. Rashid, M. Avram et al., Single crystal diamond M???i???P diodes for power electronics, IET Circuits, Devices & Systems, vol.1, issue.5, p.380, 2007.
DOI : 10.1049/iet-cds:20060379

S. J. Rashid, F. Udrea, D. J. Twitchen, R. S. Balmer, and G. A. Amaratunga, High Conductivity delta -Doped Single Crystal Diamond Schottky mip+ Diodes, Power Semiconductor Devices and IC's, 2008. ISPSD'08. 20th International Symposium on, pp.249-252, 2008.

D. Nguyen, C. Raynaud, N. Dheilly, M. Lazar, D. Tournier et al., Experimental determination of impact ionization coefficients in 4H-SiC, Diamond and Related Materials, vol.20, issue.3, pp.395-397, 2011.
DOI : 10.1016/j.diamond.2011.01.039

URL : https://hal.archives-ouvertes.fr/hal-00661429

V. Mortet and A. Soltani, Impurity impact ionization avalanche in p-type diamond, Applied Physics Letters, vol.99, issue.20, p.202105, 2011.
DOI : 10.1063/1.3662403

URL : https://hal.archives-ouvertes.fr/hal-00801157

X. Cheng and Y. Wang, A Surface-Potential-Based Compact Model for AlGaN/GaN MODFETs, IEEE Transactions on Electron Devices, vol.58, issue.2, pp.448-454, 2011.
DOI : 10.1109/TED.2010.2089690

S. Khandelwal and T. A. Fjeldly, A physics based compact model for drain current in AlGaN, Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on, pp.241-244, 2012.

A. Nakajima, K. Takao, and H. Ohashi, GaN Power Transistor Modeling for High-Speed Converter Circuit Design, IEEE Transactions on Electron Devices, vol.60, issue.2, pp.646-652, 2013.
DOI : 10.1109/TED.2012.2226180

K. Im, Y. Jo, K. Kim, D. Kim, H. Kang et al., First demonstration of heterojunction-free GaN nanochannel FinFETs, Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on, pp.415-418, 2013.
URL : https://hal.archives-ouvertes.fr/hal-01078829

G. Chicot, T. N. Tran-thi, A. Fiori, F. Jomard, E. Gheeraert et al., Hole transport in boron delta-doped diamond structures, Applied Physics Letters, vol.101, issue.16, p.162101, 2012.
DOI : 10.1063/1.4758994

URL : https://hal.archives-ouvertes.fr/hal-00760789

T. Sato, K. Ohashi, H. Sugai, T. Sumi, K. Haruna et al., Transport of heavily boron-doped synthetic semiconductor diamond in the hopping regime, Physical Review B, vol.61, issue.19, p.12970, 2000.
DOI : 10.1103/PhysRevB.61.12970

T. Klein, P. Achatz, J. Kacmarcik, C. Marcenat, F. Gustafsson et al., Metal-insulator transition and superconductivity in boron-doped diamond, Physical Review B, vol.75, issue.16, 2007.
DOI : 10.1103/PhysRevB.75.165313

URL : https://hal.archives-ouvertes.fr/hal-00165162

P. Sciajev, V. Gudelis, K. Jaranas, I. Kisialiou, E. Ivakin et al., Carrier recombination and diffusivity in microcrystalline CVD-grown and single-crystalline HPHT diamonds, physica status solidi (a), vol.12, issue.9, pp.1744-1749, 2012.
DOI : 10.1002/pssa.201200052

W. Gajewski, P. Achatz, O. Williams, K. Haenen, E. Bustarret et al., Electronic and optical properties of boron-doped nanocrystalline diamond films, Physical Review B, vol.79, issue.4, 2009.
DOI : 10.1103/PhysRevB.79.045206

URL : https://hal.archives-ouvertes.fr/hal-00761410

N. Kaminski and O. Hilt, Sic and gan devices -competition or coexistence ?, Integrated Power Electronics Systems (CIPS), 2012 7th International Conference on, pp.1-11, 2012.

D. Jin and J. A. Del-alamo, Methodology for the Study of Dynamic ON-Resistance in High-Voltage GaN Field-Effect Transistors, IEEE Transactions on Electron Devices, vol.60, issue.10, pp.3190-3196, 2013.
DOI : 10.1109/TED.2013.2274477

A. Marechal, N. Rouger, J. Crebier, J. Pernot, S. Koizumi et al., Model implementation towards the prediction of J(V) characteristics in diamond bipolar device simulations, Diamond and Related Materials, vol.43, pp.34-42, 2014.
DOI : 10.1016/j.diamond.2014.01.009

URL : https://hal.archives-ouvertes.fr/hal-00968208

H. Umezawa, Y. Kato, and S. Shikata, 1 ?? On-Resistance Diamond Vertical-Schottky Barrier Diode Operated at 250 ??C, Applied Physics Express, vol.6, issue.1, p.11302, 2013.
DOI : 10.7567/APEX.6.011302

S. Yamasaki, T. Makino, D. Takeuchi, M. Ogura, H. Kato et al., Potential of diamond power devices, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD), pp.307-310, 2013.
DOI : 10.1109/ISPSD.2013.6694410

T. Iwasaki, J. Yaita, H. Kato, T. Makino, M. Ogura et al., 600 V Diamond Junction Field-Effect Transistors Operated at 200<formula formulatype="inline"><tex Notation="TeX">$^{\circ}{\rm C}$</tex></formula>, IEEE Electron Device Letters, vol.35, issue.2, pp.241-243, 2014.
DOI : 10.1109/LED.2013.2294969

H. Kato, T. Makino, M. Ogura, D. Takeuchi, and S. Yamasaki, Fabrication of bipolar junction transistor on (001)-oriented diamond by utilizing phosphorus-doped n-type diamond base, Diamond and Related Materials, vol.34, pp.41-44, 2013.
DOI : 10.1016/j.diamond.2013.02.004

T. Makino, H. Kato, S. Ri, S. Yamasaki, and H. Okushi, Homoepitaxial diamond p???n+ junction with low specific on-resistance and ideal built-in potential, Diamond and Related Materials, vol.17, issue.4-5, pp.782-785, 2008.
DOI : 10.1016/j.diamond.2007.12.006

T. Makino, S. Tanimoto, Y. Hayashi, H. Kato, N. Tokuda et al., Diamond Schottky-pn diode with high forward current density and fast switching operation, Applied Physics Letters, vol.94, issue.26, p.262101, 2009.
DOI : 10.1063/1.3159837

T. Makino, H. Kato, D. Takeuchi, M. Ogura, H. Okushi et al., Device Design of Diamond Schottky-pn Diode for Low-Loss Power Electronics, Japanese Journal of Applied Physics, vol.51, issue.9R, p.90116, 2012.
DOI : 10.7567/JJAP.51.090116

T. Iwasaki, Y. Hoshino, K. Tsuzuki, H. Kato, T. Makino et al., Diamond Junction Field-Effect Transistors with Selectively Grown n$^{+}$-Side Gates, Applied Physics Express, vol.5, issue.9, p.91301, 2012.
DOI : 10.1143/APEX.5.091301

Y. Hoshino, H. Kato, T. Makino, M. Ogura, T. Iwasaki et al., diamond, physica status solidi (a), vol.81, issue.28, pp.1761-1764, 2012.
DOI : 10.1002/pssa.201200053

H. Kato, K. Oyama, T. Makino, M. Ogura, D. Takeuchi et al., Diamond bipolar junction transistor device with phosphorus-doped diamond base layer, Diamond and Related Materials, vol.27, issue.28, pp.27-28, 2012.
DOI : 10.1016/j.diamond.2012.05.004

S. Yamasaki, T. Matsumoto, K. Oyama, H. Kato, M. Ogura et al., Diamond power devices-possbility of high voltage applications, Electric Power Equipment-Switching Technology (ICEPE-ST) 1st International Conference on, pp.418-420, 2011.

J. Liu, S. Cheng, M. Liao, M. Imura, A. Tanaka et al., Interfacial electronic band alignment of Ta2O5/hydrogen-terminated diamond heterojunction determined by X-ray photoelectron spectroscopy, Diamond and Related Materials, vol.38, pp.24-27, 2013.
DOI : 10.1016/j.diamond.2013.06.005

J. W. Liu, M. Y. Liao, S. H. Cheng, M. Imura, and Y. Koide, /hydrogen-terminated diamond heterojunction, Journal of Applied Physics, vol.113, issue.12, p.123706, 2013.
DOI : 10.1063/1.4798366

J. W. Liu, M. Y. Liao, M. Imura, H. Oosato, E. Watanabe et al., as gate dielectric, Applied Physics Letters, vol.102, issue.11, p.112910, 2013.
DOI : 10.1063/1.4798289

S. Cheng, L. Sang, M. Liao, J. Liu, M. Imura et al., oxides on diamond for power devices, Applied Physics Letters, vol.101, issue.23, p.232907, 2012.
DOI : 10.1063/1.4770059

A. Marechal, G. Chicot, N. Rouger, P. Muret, J. Pernot et al., Leakage current conduction mechanisms in atomic layer deposited HfO2, ZrO2 and Al2O3 on O-terminated diamond, International Conference on Diamond and Carbon Materials, 2014. A. Marechal recipient of the Elsevier Young Scholar Award

A. Maréchal, G. Chicot, N. Rouger, P. Muret, J. Pernot et al., Determination of band diagram alignments of atomic layer deposited HfO2, ZrO2 and Al2O3 on Oterminated diamond, 20th International Hasselt Diamond Workshop on CVD diamond, 2015.

S. A. Russell, S. Sharabi, A. Tallaire, and D. A. Moran, Hydrogen-Terminated Diamond Field-Effect Transistors With Cutoff Frequency of 53 GHz, IEEE Electron Device Letters, vol.33, issue.10, pp.1471-1473, 2012.
DOI : 10.1109/LED.2012.2210020

A. Hiraiwa, T. Saito, A. Daicho, and H. Kawarada, Accuracy assessment of sheet-charge approximation for Fowler-Nordheim tunneling into charged insulators, Journal of Applied Physics, vol.114, issue.13, p.134501, 2013.

H. Umezawa, T. Matsumoto, and S. Shikata, Diamond Metal&#x2013;Semiconductor Field-Effect Transistor With Breakdown Voltage Over 1.5 kV, 12th IEEE Conference on, pp.1112-1114, 2012.
DOI : 10.1109/LED.2014.2356191

H. Kawarada, High-Current Metal Oxide Semiconductor Field-Effect Transistors on H-Terminated Diamond Surfaces and Their High-Frequency Operation, Japanese Journal of Applied Physics, vol.51, issue.9R, p.90111, 2012.
DOI : 10.7567/JJAP.51.090111

K. Hirama, H. Sato, Y. Harada, H. Yamamoto, and M. Kasu, Thermally Stable Operation of H-Terminated Diamond FETs by <formula formulatype="inline"> <tex Notation="TeX">$\hbox{NO}_{2}$</tex></formula> Adsorption and <formula formulatype="inline"><tex Notation="TeX">$\hbox{Al}_{2}\hbox{O}_{3}$ </tex></formula> Passivation, IEEE Electron Device Letters, vol.33, issue.8, pp.1111-1113, 2012.
DOI : 10.1109/LED.2012.2200230

P. Muret, P. Volpe, T. Tran-thi, J. Pernot, C. Hoarau et al., Schottky diode architectures on p-type diamond for fast switching, high forward current density and high breakdown field rectifiers, Diamond and Related Materials, vol.20, issue.3, pp.285-289, 2011.
DOI : 10.1016/j.diamond.2011.01.008

URL : https://hal.archives-ouvertes.fr/hal-00739714

. Kim, 1.6 kV, 2.9 mOhmcm2 normally-off p-GaN HEMT device, Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on, pp.41-44, 2012.
URL : https://hal.archives-ouvertes.fr/in2p3-00148681

F. Wang, G. Wang, A. Huang, W. Yu, and X. Ni, Design and operation of A 3.6 kV high performance solid state transformer based on 13kv SiC MOSFET and JBS diode, Energy Conversion Congress and Exposition (ECCE), 2014 IEEE, pp.4553-4560, 2014.

B. D. Jaeger, M. Van-hove, D. Wellekens, X. Kang, H. Liang et al., Au-free CMOS-compatible AlGaN/GaN HEMT processing on 200 mm Si substrates, 2012 24th International Symposium on Power Semiconductor Devices and ICs, pp.49-52, 2012.
DOI : 10.1109/ISPSD.2012.6229020

F. Medjdoub, J. Derluyn, K. Cheng, M. Leys, S. Degroote et al., Low On-Resistance High-Breakdown Normally Off AlN/GaN/AlGaN DHFET on Si Substrate, IEEE Electron Device Letters, vol.31, issue.2, pp.111-113, 2010.
DOI : 10.1109/LED.2009.2037719

S. Tripathy, V. K. Lin, S. B. Dolmanan, J. P. Tan, R. S. Kajen et al., AlGaN/GaN two-dimensional-electron gas heterostructures on 200???mm diameter Si(111), AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si, p.82110, 2012.
DOI : 10.1063/1.4746751

M. Ishida, T. Ueda, T. Tanaka, and D. Ueda, GaN on Si Technologies for Power Switching Devices, IEEE Transactions on Electron Devices, vol.60, issue.10, pp.3053-3059, 2013.
DOI : 10.1109/TED.2013.2268577

J. Kim, S. Hwang, I. Hwang, H. Choi, S. Chong et al., High threshold voltage p-GaN gate power devices on 200 mm Si, Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on, pp.315-318, 2013.

D. Disney, H. Nie, A. Edwards, D. Bour, H. Shah et al., Vertical power diodes in bulk GaN, Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on, pp.59-62, 2013.

I. C. Kizilyalli, A. P. Edwards, H. Nie, D. Bour, T. Prunty et al., 3.7 kV Vertical GaN PN Diodes, IEEE Electron Device Letters, vol.35, issue.2, pp.247-249, 2014.
DOI : 10.1109/LED.2013.2294175

T. Kimoto, J. Suda, Y. Yonezawa, K. Asano, K. Fukuda et al., Progress in ultrahigh-voltage SiC devices for future power infrastructure, 2014 IEEE International Electron Devices Meeting, pp.2-5, 2014.
DOI : 10.1109/IEDM.2014.7046967

T. Kimoto, Progress and future challenges of silicon carbide devices for integrated circuits, Proceedings of the IEEE 2014 Custom Integrated Circuits Conference, pp.1-8, 2014.
DOI : 10.1109/CICC.2014.6946035

K. Fukuda, D. Okamoto, M. Okamoto, T. Deguchi, T. Mizushima et al., Development of Ultrahigh-Voltage SiC Devices, Electron Devices, pp.396-404, 2015.
DOI : 10.1109/TED.2014.2357812

Y. Yonezawa, T. Mizushima, K. Takenaka, H. Fujisawa, T. Kato et al., Low vf and highly reliable 16 kv ultrahigh voltage sic flip-type n-channel implantation and epitaxial igbt, Electron Devices Meeting (IEDM), 2013 IEEE International, pp.6-6, 2013.
DOI : 10.1109/iedm.2013.6724576

A. Kadavelugu, S. Bhattacharya, S. Ryu, D. Grider, S. Leslie et al., Understanding dv/dt of 15 kV SiC N-IGBT and its control using active gate driver, 2014 IEEE Energy Conversion Congress and Exposition (ECCE), pp.2014-2213, 2014.
DOI : 10.1109/ECCE.2014.6953698

R. Hristova, Étude d'un récepteur optique integré au sein de transistor de puissance à structure verticale, tech. rep, 2008.

S. Lefebvre and F. Miserey, Composants à semi-conducteur pour l'électronique de puissance, No, 2004.

S. Lefebvre and B. Multon, Commande des semi-conducteurs de puissances : contextes

S. Lefebvre and B. Multon, Commande des semi-conducteurs de puissances : principes

J. Crébier, Intégration Monolithique et composants de puissance. Habilitation à Diriger des Recherches -INPG -G2Elab, 2006.

H. Fujita, A Resonant Gate-Drive Circuit Capable of High-Frequency and High-Efficiency Operation, IEEE Transactions on Power Electronics, vol.25, issue.4, pp.962-969, 2010.
DOI : 10.1109/TPEL.2009.2030201

D. Vasic, F. Costa, and E. Sarraute, Piezoelectric transformer for integrated MOSFET and IGBT gate driver, IEEE Transactions on Power Electronics, vol.21, issue.1, pp.56-65, 2006.
DOI : 10.1109/TPEL.2005.861121

Y. Zhang, M. Rodriguez, and D. Maksimovic, 100 MHz, 20 V, 90% efficient synchronous buck converter with integrated gate driver, 2014 IEEE Energy Conversion Congress and Exposition (ECCE), pp.3664-3671, 2014.
DOI : 10.1109/ECCE.2014.6953899

A. Shorten, W. T. Ng, M. Sasaki, T. Kawashima, H. Nishio et al., A segmented gate driver IC for the reduction of IGBT collector current over-shoot at turn-on A one-chip isolated gate driver with an electromagnetic resonant coupler using a SPDT switch, Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on, pp.73-76, 2012.

L. Dulau, S. Pontarollo, A. Boimond, J. Garnier, N. Giraudo et al., A new gate driver integrated circuit for IGBT devices with advanced protections, IEEE Transactions on Power Electronics, vol.21, issue.1, pp.38-44, 2006.
DOI : 10.1109/TPEL.2005.861115

M. Bathily, B. Allard, and F. Hasbani, A 200-MHz Integrated Buck Converter With Resonant Gate Drivers for an RF Power Amplifier, IEEE Transactions on Power Electronics, vol.27, issue.2, pp.610-613, 2012.
DOI : 10.1109/TPEL.2011.2119380

URL : https://hal.archives-ouvertes.fr/hal-00579197

N. Rouger, J. Crebier, H. T. Manh, and C. Schaeffer, Toward integrated gate driver supplies : Practical and analytical studies of high-voltage capabilities, 2008 IEEE Power Electronics Specialists Conference, pp.873-879, 2008.
DOI : 10.1109/PESC.2008.4592039

A. Rujas, G. Garcia, I. Etxeberria-otadu, U. Larranaga, and T. Nieva, Design and experimental validation of a high frequency gate driver for silicon carbide power modules, 2014 IEEE Energy Conversion Congress and Exposition (ECCE), pp.5729-5735, 2014.
DOI : 10.1109/ECCE.2014.6954187

Y. Xi, M. Chen, K. Nielson, and R. Bell, Optimization of the drive circuit for enhancement mode power GaN FETs in DC-DC converters, 2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and Exposition (APEC), pp.2467-2471, 2012.
DOI : 10.1109/APEC.2012.6166168

A. Sokolov, D. Mascarella, and G. Joos, Variable-speed IGBT gate driver with loss/overshoot balancing for switching loss reduction, 2014 IEEE Energy Conversion Congress and Exposition (ECCE), pp.1232-1239, 2014.
DOI : 10.1109/ECCE.2014.6953542

L. Hoffmann, C. Gautier, S. Lefebvre, and F. Costa, Optimization of the Driver of GaN Power Transistors Through Measurement of Their Thermal Behavior, IEEE Transactions on Power Electronics, vol.29, issue.5, 2013.
DOI : 10.1109/TPEL.2013.2277759

M. Sasaki, H. Nishio, A. Shorten, and W. T. Ng, Current balancing control for parallel connected IGBTs using programmable gate driver output resistance, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD), pp.65-68, 2013.
DOI : 10.1109/ISPSD.2013.6694398

Z. Wang, X. Shi, L. M. Tolbert, F. Wang, and B. J. Blalock, A di/dt Feedback-Based Active Gate Driver for Smart Switching and Fast Overcurrent Protection of IGBT Modules, IEEE Transactions on Power Electronics, vol.29, issue.7, pp.3720-3732, 2014.
DOI : 10.1109/TPEL.2013.2278794

T. Kang and J. Kim, Design and analysis of 37.5% energy-recycling flyback-type class-D gate driver IC with 5-to-15V level-conversion, 2014 IEEE Energy Conversion Congress and Exposition (ECCE), pp.2159-2163, 2014.
DOI : 10.1109/ECCE.2014.6953689

R. Mitova, J. Crebier, L. Aubard, and C. Scheaffer, Gate driver supply of power switches without galvanic insulation, Conference Record of the 2004 IEEE Industry Applications Conference, 2004. 39th IAS Annual Meeting., pp.1917-1923, 2004.
DOI : 10.1109/IAS.2004.1348731

URL : https://hal.archives-ouvertes.fr/hal-00185649

J. Delaine, P. Jeannin, D. Frey, and K. Guepratte, Insulated gate driver for eGaN FET, 2014 IEEE Energy Conversion Congress and Exposition (ECCE), pp.2849-2856, 2014.
DOI : 10.1109/ECCE.2014.6953785

URL : https://hal.archives-ouvertes.fr/hal-01067186

G. Schmitt, W. Kusserow, and R. Kennel, Power supply for a IGBT-driver with high insulation voltage based on a printed planar transformers, 2008 13th International Power Electronics and Motion Control Conference, pp.1239-1242, 2008.
DOI : 10.1109/EPEPEMC.2008.4635438

K. Onda, A. Konno, and J. Sakano, New concept high-voltage IGBT gate driver with selfadjusting active gate control function for SiC-SBD hybrid module, Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on, pp.343-346, 2013.
DOI : 10.1109/ispsd.2013.6694418

Y. Chen, F. Lee, L. Amoroso, and H. Wu, A Resonant MOSFET Gate Driver With Efficient Energy Recovery, IEEE Transactions on Power Electronics, vol.19, issue.2, pp.470-477, 2004.
DOI : 10.1109/TPEL.2003.823206

S. Busquets-monge, D. Boroyevich, R. Burgos, and Z. Chen, Performance analysis and design optimization of a self-powered gate-driver supply circuit, 2010 IEEE International Symposium on Industrial Electronics, pp.979-985, 2010.
DOI : 10.1109/ISIE.2010.5637049

C. Caramel, P. Austin, J. Sanchez, E. Imbernon, and M. Breil, Integrated IGBT short-circuit protection structure: Design and optimization, Microelectronics Journal, vol.37, issue.3, pp.249-256, 2006.
DOI : 10.1016/j.mejo.2005.09.028

N. Rouger, Intégration monolithique des fonctions d'interface au sein de composants de puissance à structure verticale, 2008.

L. Peng, R. Wu, X. Fang, Y. Toyoda, M. Akahane et al., A novel 3d TSV transformer technology for digital isolator gate driver applications, Power Semiconductor Devices and ICs (ISPSD), 2013 25th International Symposium on, pp.69-72, 2013.

F. Qi, L. Xu, G. Zhao, and J. Wang, Transformer isolated gate drive with protection for SiC MOSFET in high temperature application, 2014 IEEE Energy Conversion Congress and Exposition (ECCE), pp.5723-5728, 2014.
DOI : 10.1109/ECCE.2014.6954186

T. V. Nguyen, P. Jeannin, J. Crebier, and J. Schanen, A new compact, isolated and integrated gate driver using high frequency transformer for interleaved Boost converter, 2011 IEEE Energy Conversion Congress and Exposition, pp.1889-1896, 2011.
DOI : 10.1109/ECCE.2011.6064016

URL : https://hal.archives-ouvertes.fr/hal-00626992

N. Dheilly, G. Paques, D. Planson, P. Bevilacqua, and S. Scharnholz, Optical Triggering of 4H-SiC Thyristors with a 365 nm UV LED, Materials Science Forum, vol.679, issue.680, pp.679-680, 2011.
DOI : 10.4028/www.scientific.net/MSF.679-680.690

URL : https://hal.archives-ouvertes.fr/hal-00661458

M. J. Lazarus, K. Loungis, and V. H. Allen, Optically controlled high-speed switching of a power transistor Circuits and Systems I : Fundamental Theory and Applications, IEEE Transactions on, vol.47, issue.4, pp.528-535, 2000.

F. Zhao and M. M. Islam, Optically Activated SiC Power Transistors for Pulsed-Power Application, IEEE Electron Device Letters, vol.31, issue.10, pp.1146-1148, 2010.
DOI : 10.1109/LED.2010.2058840

H. Fujita, A Resonant Gate-Drive Circuit With Optically Isolated Control Signal and Power Supply for Fast-Switching and High-Voltage Power Semiconductor Devices, IEEE Transactions on Power Electronics, vol.28, issue.11, pp.5423-5430, 2013.
DOI : 10.1109/TPEL.2013.2247423

S. K. Mazumder, A. Mojab, and S. K. Mazumder, Optically-gated Non-latched High Gain Power Device 15-kV 100-A single-bias all-optical SiC emitter turn-off thyristor, tech. rep., DTIC Document Energy Conversion Congress and Exposition (ECCE), pp.2014-455, 2008.

S. Bose and S. K. Mazumder, Atomistic and electrical simulations of a GaN???AlN???(4H)SiC heterostructure optically-triggered vertical power semiconductor device, Solid-State Electronics, vol.62, issue.1, pp.5-13, 2011.
DOI : 10.1016/j.sse.2011.03.008

T. Sarkar and S. K. Mazumder, Dynamic power density, wavelength, and switching time modulation of optically triggered power transistor (OTPT) performance parameters, Microelectronics Journal, vol.38, issue.2, pp.285-298, 2007.
DOI : 10.1016/j.mejo.2006.11.020

S. K. Mazumder and T. Sarkar, Optically Activated Gate Control for Power Electronics, IEEE Transactions on Power Electronics, vol.26, issue.10, pp.2863-2886, 2011.
DOI : 10.1109/TPEL.2009.2034856

R. Berriane, J. Sanchez, and J. Jalade, MOS-gated optically triggered thyristor: A new galvanically insulated high voltage integrated switch, Solid-State Electronics, vol.39, issue.6, pp.863-869, 1996.
DOI : 10.1016/0038-1101(95)00247-2

P. Chakrabarti, V. Jha, P. Kalra, and G. Gupta, Noise modeling of an optically controlled MESFET (OPFET), Microwave and Optical Technology Letters, vol.38, issue.2, pp.79-83, 2002.
DOI : 10.1002/mop.10242

F. Zhao, M. Islam, P. Muzykov, A. Bolotnikov, and T. Sudarshan, Optically Activated 4H-SiC p-i-n Diodes for High-Power Applications, IEEE Electron Device Letters, vol.30, issue.11, pp.1182-1184, 2009.
DOI : 10.1109/LED.2009.2031419

N. Dheilly, Conception et optimisation de thyristors optiques en carbure de silicium pour des applications d'électronique impulsionnelle, 2011.

P. Hongbin, C. Lin, R. Jie, C. Zhiming, and N. Yagong, An optically controlled SiC lateral power transistor based on SiC/SiCGe super junction structure, Journal of Semiconductors, vol.31, issue.4, p.44001, 2010.
DOI : 10.1088/1674-4926/31/4/044001

T. Sarkar and S. K. Mazumder, Amplitude, pulse-width, and wavelength modulation strategies for an optically-controlled power DMOSFET, 2004 IEEE 35th Annual Power Electronics Specialists Conference (IEEE Cat. No.04CH37551), pp.3004-3008, 2004.
DOI : 10.1109/PESC.2004.1355313

T. Sarkar and S. K. Mazumder, Epitaxial Design of a Direct Optically Controlled GaAs/AlGaAs-Based Heterostructure Lateral Superjunction Power Device for Fast Repetitive Switching, IEEE Transactions on Electron Devices, vol.54, issue.3, pp.589-600, 2007.
DOI : 10.1109/TED.2006.890231

A. Meyer, S. K. Mazumder, and H. Riazmontazer, Optical control of 1200-V and 20-A SiC MOSFET, 2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and Exposition (APEC), p.2012
DOI : 10.1109/APEC.2012.6166179

S. Nagai, N. Negoro, T. Fukuda, N. Otsuka, H. Sakai et al., A DC-isolated gate drive IC with drive-by-microwave technology for power switching devices, 2012 IEEE International Solid-State Circuits Conference, pp.404-406, 2012.
DOI : 10.1109/ISSCC.2012.6177066

S. Nagai, Y. Kawai, O. Tabata, H. Fujiwara, Y. Yamada et al., A Drive-by-Microwave isolated gate driver with a high-speed voltage monitoring, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), pp.434-437, 2014.
DOI : 10.1109/ISPSD.2014.6856069

C. Batard, G. Andrieux, N. Ginot, and M. Mannah, Wireless Transmission of IGBT Driver Control, 2009 Twenty-Fourth Annual IEEE Applied Power Electronics Conference and Exposition, pp.1257-1262, 2009.
DOI : 10.1109/APEC.2009.4802825

Z. Liu, X. Huang, F. C. Lee, and Q. Li, Package Parasitic Inductance Extraction and Simulation Model Development for the High-Voltage Cascode GaN HEMT, IEEE Transactions on Power Electronics, vol.29, issue.4, pp.1977-1985, 2014.
DOI : 10.1109/TPEL.2013.2264941

J. Wang, H. S. Chung, and R. T. Li, Characterization and Experimental Assessment of the Effects of Parasitic Elements on the MOSFET Switching Performance, IEEE Transactions on Power Electronics, vol.28, issue.1, pp.573-590, 2013.
DOI : 10.1109/TPEL.2012.2195332

M. A. Broadmeadow, G. R. Walker, and G. F. Ledwich, Comparison of the gate drive parameter space for driving power MOSFETs using conventional and cascode configurations, 2014 IEEE Energy Conversion Congress and Exposition (ECCE), pp.3002-3009, 2014.
DOI : 10.1109/ECCE.2014.6953808

M. Abu-khaizaran, P. Palmer, and Y. Wang, Parameters influencing the performance of an IGBT gate drive, 2008 IEEE Power Electronics Specialists Conference, pp.3457-3462, 2008.
DOI : 10.1109/PESC.2008.4592490

S. She, W. Zhang, X. Huang, W. Du, Z. Liu et al., Thermal analysis and improvement of cascode GaN HEMT in stack-die structure, 2014 IEEE Energy Conversion Congress and Exposition (ECCE), pp.5709-5715, 2014.
DOI : 10.1109/ECCE.2014.6954184

C. Cai, W. Zhou, and K. Sheng, Characteristics and Application of Normally-Off SiC-JFETs in Converters Without Antiparallel Diodes, IEEE Transactions on Power Electronics, vol.28, issue.10, pp.4850-4860, 2013.
DOI : 10.1109/TPEL.2012.2237417

H. Wang, A. M. Ho, Q. Jiang, and K. J. Chen, A GaN pulse width modulation integrated circuit, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD), pp.430-433, 2014.
DOI : 10.1109/ISPSD.2014.6856068

W. Chen, K. Wong, and K. J. Chen, Monolithic integration of lateral field-effect rectifier with normally-off HEMT for GaN-on-Si switch-mode power supply converters, 2008 IEEE International Electron Devices Meeting, pp.1-4, 2008.
DOI : 10.1109/IEDM.2008.4796635

V. Pala, H. Peng, P. Wright, M. M. Hella, and T. P. Chow, Integrated High-Frequency Power Converters Based on GaAs pHEMT: Technology Characterization and Design Examples, IEEE Transactions on Power Electronics, vol.27, issue.5, pp.2644-2656, 2012.
DOI : 10.1109/TPEL.2011.2174803

H. Lee, K. Ryu, M. Sun, and T. Palacios, Wafer-Level Heterogeneous Integration of GaN HEMTs and Si (100) MOSFETs, IEEE Electron Device Letters, vol.33, issue.2, pp.200-202, 2012.
DOI : 10.1109/LED.2011.2174136

A. Fontsere, A. Perez-tomas, V. Banu, P. Godignon, J. Millã¡n et al., A HfO 2 based 800v/300Â?C300Â?C Au-free AlGaN/GaN-on-Si HEMT technology, Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on, pp.37-40, 2012.

S. She, W. Zhang, X. Huang, W. Du, Z. Liu et al., Thermal analysis and improvement of cascode GaN HEMT in stack-die structure, " in Energy Conversion Congress and Exposition (ECCE) Evaluation of high-voltage cascode gan hemt in different packages, Applied Power Electronics Conference and Exposition (APEC), 2014 Twenty-Ninth Annual IEEE, pp.5709-5715, 2014.

F. Lee, J. Van-wyk, D. Boroyevich, G. Lu, Z. Liang et al., Technology trends toward a system-in-a-module in power electronics, Circuits and Systems Magazine, pp.4-22, 2002.
DOI : 10.1109/MCAS.2002.1173132

N. Mcneill, D. Holliday, and P. H. Mellor, Half-bridge power device gate driver circuit with isolation using integrated magnetic component and carrier signal phase switching, Power Electronics and Applications Proceedings of the 2011-14th European Conference on, pp.1-10, 2011.

H. Peng, V. Pala, P. Wright, T. P. Chow, and M. M. Hella, High efficiency, high switching speed, AlGaAs/GaAs P-HEMT DC???DC converter for integrated power amplifier modules, Analog Integrated Circuits and Signal Processing, vol.3, issue.11, pp.331-348, 2010.
DOI : 10.1007/s10470-010-9543-z

T. Sarkar and S. K. Mazumder, Epitaxial Design of a Direct Optically Controlled GaAs/AlGaAs-Based Heterostructure Lateral Superjunction Power Device for Fast Repetitive Switching, IEEE Transactions on Electron Devices, vol.54, issue.3, pp.589-600, 2007.
DOI : 10.1109/TED.2006.890231

Q. Chen, J. W. Yang, A. Osinsky, S. Gangopadhyay, B. Lim et al., Schottky barrier detectors on GaN for visible???blind ultraviolet detection, Applied Physics Letters, vol.70, issue.17, p.2277, 1997.
DOI : 10.1063/1.118837

A. Osinsky, S. Gangopadhyay, J. W. Yang, R. Gaska, D. Kuksenkov et al., Visible-blind GaN Schottky barrier detectors grown on Si(111), Visible-blind GaN Schottky barrier detectors grown on Si, p.551, 1998.
DOI : 10.1063/1.120755

E. Monroy, F. Alle, E. Munoz, and F. Omnes, AlGaN metal???semiconductor???metal photodiodes, Applied Physics Letters, vol.74, issue.22, p.3401, 1999.
DOI : 10.1063/1.123358

F. Zhang, G. Sun, H. Huang, Z. Wu, L. Wang et al., High-Performance 4H&#x2013;SiC-Based Metal&#x2013;Insulator&#x2013;Semiconductor Ultraviolet Photodetectors With <formula formulatype="inline"><tex Notation="TeX">$\hbox{SiO}_{2}$</tex></formula> and <formula formulatype="inline"><tex Notation="TeX">$\hbox{Al}_{2}\hbox{O}_{3}\hbox{/}\hbox{SiO}_{2}$</tex></formula> Films, IEEE Electron Device Letters, vol.32, issue.12, pp.1722-1724, 2011.
DOI : 10.1109/LED.2011.2168597

F. Yan, S. Xiaobin, Y. Aslam, D. Zhao, J. Franz et al., 4h-SiC UV photo detectors with large area and very high specific detectivity, IEEE Journal of Quantum Electronics, vol.40, pp.1315-1320, 2004.

N. G. Wright and A. B. Horsfall, SiC sensors: a review, Journal of Physics D: Applied Physics, vol.40, issue.20, pp.6345-6354, 2007.
DOI : 10.1088/0022-3727/40/20/S17

Y. Koide and M. Liao, Mechanism of photoconductivity gain for p-diamond Schottky photodiode, Diamond and Related Materials, vol.16, issue.4-7, pp.949-952, 2007.
DOI : 10.1016/j.diamond.2007.01.010

M. Imura, Y. Koide, M. Liao, and J. Alvarez, Vertical-type Schottky-barrier photodiode using p-diamond epilayer grown on heavily boron-doped p+-diamond substrate, Diamond and Related Materials, vol.17, issue.11, pp.1916-1921, 2008.
DOI : 10.1016/j.diamond.2008.04.012

URL : https://hal.archives-ouvertes.fr/hal-00763182

V. Polyakov, A. Rukovishnikov, L. Avdeeva, Z. Kun-'kova, V. Varnin et al., UV Schottky photodiode on boron-doped CVD diamond films, Diamond and Related Materials, vol.15, issue.11-12, pp.1972-1975, 2006.
DOI : 10.1016/j.diamond.2006.08.008

S. Radovanovic, High-Speed Photodiodes in Standard CMOS Technology, 2006.

Y. A. Schow and . Vlasov, Monolithic Silicon Integration of Scaled Photonic Switch Fabrics , CMOS Logic, and Device Driver Circuits, Journal of Lightwave Technology, vol.32, pp.743-751, 2014.

J. H. Lau, Evolution, challenge, and outlook of TSV, 3D IC integration and 3d silicon integration, 2011 International Symposium on Advanced Packaging Materials (APM), pp.462-488, 2011.
DOI : 10.1109/ISAPM.2011.6105753

H. Park, A. Fang, S. Kodama, and J. Bowers, Hybrid silicon evanescent laser fabricated with a silicon waveguide and III-V offset quantum wells, Optics Express, vol.13, issue.23, pp.9460-9464, 2005.
DOI : 10.1364/OPEX.13.009460

J. E. Bowers, D. Liang, A. W. Fang, H. Park, R. Jones et al., Hybrid Silicon Lasers: The Final Frontier to Integrated Computing, Optics and Photonics News, vol.21, issue.5, pp.28-33, 2010.
DOI : 10.1364/OPN.21.5.000028

S. Assefa, S. Shank, W. Green, M. Khater, E. Kiewra et al., A 90nm CMOS integrated Nano-Photonics technology for 25Gbps WDM optical communications applications, 2012 International Electron Devices Meeting, pp.33-41, 2012.
DOI : 10.1109/IEDM.2012.6479162

D. Fowler, C. Baudot, J. Fedeli, B. Caire, L. Virot et al., Complete Si-Photonics Device-library on 300mm wafers, Optical Fiber Communication Conference, p.2, 2014.
DOI : 10.1364/OFC.2014.Th2A.22

T. Pham, Composants unipolaires en diamant pour l'électronique de puissance -thèse en cours

T. Simonot, Conception et hybridation de l'environnement électronique des composants de puissance à structure verticale, 2011.

D. To, Isolation galvanique intégrée pour transistors de puissance, 2015.

R. Vafaei, Contrôle optique intégré pour composants de puissance, 2014.

L. Le, Isolation galvanique intégrée pour nouveaux transistors de puissance -thèse en cours, 2015.

H. Nguyen, Méthodes et Modèles pour une Approche de Dimensionnement Géométrique et Technologique d'un Semi-conducteur de Puissance Intégré. Application à la Conception d'un MOSFET autonome, 2011.

H. Nguyen, J. Coulomb, L. Gerbaud, J. Crébier, and N. Rouger, Application of progressive quadratic response surface method for an oscillation problem optimization, COMPEL, The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, vol.31, issue.3, pp.842-857, 2012.
URL : https://hal.archives-ouvertes.fr/hal-00520046

H. Nguyen-xuan, L. Gerbaud, N. Rouger, and J. Crébier, Optimization of a power mosfet and its monolithically integrated self-powering circuits, International Journal of Applied Electromagnetics and Mechanics, vol.37, pp.159-171, 2011.

R. Grezaud, Driver pour transistors de puissance GaN, 2014.

R. Grezaud, F. Ayel, N. Rouger, and J. Crébier, An Adaptive Output Impedance Gate Drive Circuit for Safer and More Efficient Control of Wide Bandgap Devices, IEEE Workshop on Wide Bandgap Power Devices and Applications, pp.68-71, 2013.

R. Grezaud, F. Ayel, N. Rouger, and J. Crébier, A specific switching characterization method for evaluation of operating point and temperature impacts on wide bandgap devices, The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, pp.104-107, 2013.
DOI : 10.1109/WiPDA.2013.6695573

URL : https://hal.archives-ouvertes.fr/hal-00988288

R. Vafaei, J. Crébier, and N. Rouger, Performance measurements of an optical detector designed for monolithic integration with a power VDMOS, 2013 IEEE International Instrumentation and Measurement Technology Conference (I2MTC), pp.1609-1614, 2013.
DOI : 10.1109/I2MTC.2013.6555686

URL : https://hal.archives-ouvertes.fr/hal-00828612

R. Vafaei, N. Rouger, D. To, and J. Crebier, Experimental Investigation of an Integrated Optical Interface for Power MOSFET Drivers, IEEE Electron Device Letters, vol.33, issue.2, pp.230-232, 2012.
DOI : 10.1109/LED.2011.2175196

URL : https://hal.archives-ouvertes.fr/hal-00672877

B. Sarrazin, Optimisation d'une chaîne de traction pour véhicule électrique, 2012.

B. Sarrazin, N. Rouger, and J. Ferrieux, Performance analysis of different power electronics structures for electric vehicles (EVs), European Journal of Electrical Engineering, vol.16, issue.3-4, pp.3-4, 2013.
DOI : 10.3166/ejee.16.447-463

URL : https://hal.archives-ouvertes.fr/hal-00988234

B. Sarrazin, N. Rouger, J. Ferrieux, and Y. Avenas, Benefits of cascaded inverters for electrical vehicles' drive-trains, 2011 IEEE Energy Conversion Congress and Exposition, pp.1441-1448, 2011.
DOI : 10.1109/ECCE.2011.6063950

URL : https://hal.archives-ouvertes.fr/hal-00728008

R. Mitova, Intégration de l'alimentation de la commande rapprochée d'un interrupteur de puissance à potentiel flottant, 2005.

N. Rouger, Fonctions intégrées tout silicium Master's thesis, Stage M2R INPG -G2Elab, 2005.

N. Rouger, J. Crebier, R. Mitova, L. Aubard, and C. Schaeffer, Fully integrated driver power supply for insulated gate transistors, 2006 IEEE International Symposium on Power Semiconductor Devices & IC's, pp.1-4, 2006.
DOI : 10.1109/ISPSD.2006.1666151

N. Rouger and J. Crebier, Toward Generic Fully Integrated Gate Driver Power Supplies, IECON 2006, 32nd Annual Conference on IEEE Industrial Electronics, pp.2106-2114, 2008.
DOI : 10.1109/IECON.2006.347252

URL : https://hal.archives-ouvertes.fr/hal-00406629

J. Crebier and N. Rouger, Loss Free Gate Driver Unipolar Power Supply for High Side Power Transistors, IEEE Transactions on Power Electronics, vol.23, issue.3, pp.1565-1573, 2008.
DOI : 10.1109/TPEL.2008.921163

URL : https://hal.archives-ouvertes.fr/hal-00406642

H. T. Manh, Autour de l'autoalimentation de la commande rapprochée d'un igbt, 2007.

B. N. Dac, Intégration fonctionnelle autour des composants quatre quadrants avec l'application à la conversion AC/AC, 2008.

N. Rouger, J. Crebier, L. Aubard, and C. Schaeffer, Toward Generic Fully Integrated Gate Driver Power Supplies, IECON 2006, 32nd Annual Conference on IEEE Industrial Electronics, pp.1866-1871, 2006.
DOI : 10.1109/IECON.2006.347252

URL : https://hal.archives-ouvertes.fr/hal-00406629

A. S. De-urturi, Mise en oeuvre et caractérisation d'une isolation optique en électronique de puissance, 2009.

N. Rouger and J. Crebier, Integrated Photoreceiver For An Isolated Control Signal Transfert In Favour Of Power Transistors, 2008 20th International Symposium on Power Semiconductor Devices and IC's, pp.213-216, 2008.
DOI : 10.1109/ISPSD.2008.4538936

URL : https://hal.archives-ouvertes.fr/hal-00282182

N. Rouger, R. Vafaei, D. N. To, and J. Crébier, Etude expérimentale d'un étage intégré d'isolation par voie optique pour transistors de puissance, Electronique de Puissance du Futur 2012, 2012.

N. Rouger, R. Vafaei, N. To, L. T. Le, N. Corrao et al., Transfert isolé des signaux de commande dans le contexte de l'intégration pour les composants actifs d'électronique de puissance, Symposium de Génie Electrique SGE 2014, 2014.

T. Simonot, N. Rouger, J. Crébier, V. Gaude, and I. Pheng, A novel power system in package with 3D chip on chip interconnections of the power transistor and its gate driver, Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on, pp.328-331, 2011.
URL : https://hal.archives-ouvertes.fr/hal-00599317

T. Simonot, N. Rouger, J. Crébier, and J. Arnould, Design and characterization of a signal insulation coreless transformer integrated in a CMOS gate driver chip, Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on, pp.360-363, 2011.
URL : https://hal.archives-ouvertes.fr/hal-00599260

R. Grezaud, F. Ayel, N. Rouger, and J. Crebier, Méthodes spécifiques de caractérisation en dynamique et de commande de composants grand gap en environnement variable, Symposium de Génie Electrique SGE 2014, 2014.

R. Grezaud, F. Ayel, N. Rouger, and J. Crebier, Monolithically integrated voltage level shifter for Wide Bandgap Devices-based converters, 2014 10th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), pp.1-4, 2014.
DOI : 10.1109/PRIME.2014.6872759

L. Benaissa, N. Rouger, J. Widiez, J. Crebier, J. Dafonseca et al., A vertical power device conductive assembly at wafer level using direct bonding technology, 2012 24th International Symposium on Power Semiconductor Devices and ICs, pp.77-80, 2012.
DOI : 10.1109/ISPSD.2012.6229027

URL : https://hal.archives-ouvertes.fr/hal-00820244

N. Rouger, L. Benaissa, J. Widiez, B. Imbert, V. Gaude et al., True 3D packaging solution for stacked vertical power devices, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD), pp.90-100, 2013.
DOI : 10.1109/ISPSD.2013.6694405

URL : https://hal.archives-ouvertes.fr/hal-00843807

J. Crebier, B. Letowski, J. Widiez, and N. Rouger, Brevet d'invention CEA / CNRS en cours d'évaluation, Convertisseur

D. To, N. Rouger, Y. Lembeye, J. Arnould, and N. Corrao, Modeling and characterization of 0.35 um CMOS coreless transformer for gate drivers, Power Semiconductor Devices IC's (ISPSD), 2014 IEEE 26th International Symposium on, pp.330-333, 2014.
URL : https://hal.archives-ouvertes.fr/hal-00989648

L. Le, J. Crebier, and N. Rouger, CMOS integrated optical isolator for power transistor gate driver, IECON 2014, 40th Annual Conference of the IEEE Industrial Electronics Society, 2014.
DOI : 10.1109/IECON.2014.7048669

URL : https://hal.archives-ouvertes.fr/hal-01084058

L. Le, Modélisation de transistors gan, 2012.

A. Maréchal, N. Rouger, J. Crébier, J. Pernot, S. Koizumi et al., Diamond bipolar device simulation, The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, pp.151-154, 2013.
DOI : 10.1109/WiPDA.2013.6695584

G. Chicot, Field effect in boron doped diamond, 2013.
URL : https://hal.archives-ouvertes.fr/tel-01062250

G. Verneau, Optimisation géométrique de MOSFETs de puissance en vue d'intégrer l'alimentation de l'étage de commande, p.2, 2003.

Q. Hoang, Outils d'optimisation pour la conception de composants de puissance, 2011.

T. Simonot, H. Nguyen, N. Rouger, J. Crebier, A. Bourennane et al., Towards reduced threshold voltages for vertical power Mosfet transistors, 2011 IEEE International Symposium on Industrial Electronics, pp.444-449, 2011.
DOI : 10.1109/ISIE.2011.5984199

URL : https://hal.archives-ouvertes.fr/hal-00607324

T. Simonot, N. Rouger, X. H. Nguyen, J. Crébier, A. Bourennane et al., Tension de seuil réduite pour composants de puissance à grille: Intérêts et conséquences, 13ème édition du colloque Électronique de Puissance du Futur, p.4, 2010.

X. H. Nguyen, L. Gerbaud, N. Rouger, and J. Crébier, optimization of a power MOS- FET And Its Monolithically integrated self-powering Circuits, 11th International Workshop on Optimization and Inverse Problems in Electromagnetism, pp.978-954, 2010.

N. Rouger, Analytic and semi-analytic modeling for double gaussian and any pn junction, 2015.

D. Deptuck, N. Rouger, N. Jaeger, and L. Chrostowski, A trans-Canadian graduate course in silicon nanophotonics, Photons technical review, vol.8, pp.29-33, 2010.
URL : https://hal.archives-ouvertes.fr/hal-00608500

R. Boeck, N. A. Jaeger, N. Rouger, and L. Chrostowski, Series-coupled silicon racetrack resonators and the Vernier effect: theory and measurement, Optics Express, vol.18, issue.24, pp.25151-25157, 2010.
DOI : 10.1364/OE.18.025151

URL : https://hal.archives-ouvertes.fr/hal-00545395

N. Rouger, L. Chrostowski, and R. Vafaei, Temperature Effects on Silicon-on-Insulator (SOI) Racetrack Resonators: A Coupled Analytic and 2-D Finite Difference Approach, Journal of Lightwave Technology, vol.28, issue.9, pp.1380-1391, 2010.
DOI : 10.1109/JLT.2010.2041528

URL : https://hal.archives-ouvertes.fr/hal-00485612

N. Jaeger, D. Deptuck, N. Rouger, and L. Chrostowski, Current Trends in Silicon Photonics in the Context of Higher Education, CMOS Emerging Technologies Workshop, 2010.
URL : https://hal.archives-ouvertes.fr/hal-00608293

L. Chrostowski, N. Rouger, D. Deptuck, and N. Jaeger, Silicon Nanophotonics Fabrication: An innovative graduate course, 2010 17th International Conference on Telecommunications, pp.544-551, 2010.
DOI : 10.1109/ICTEL.2010.5478599

URL : https://hal.archives-ouvertes.fr/hal-00476550

N. Rouger and L. Chrostowski, Simulation of coupling between parallel SOI nanowaveguides and its dependence on temperature, 2009 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics, pp.103-104, 2009.
DOI : 10.1109/OMEMS.2009.5338536

W. Shi, Z. Duan, R. Vafaei, N. Rouger, B. Faraji et al., Simulation of a 1550-nm InGaAsP-InP transistor laser, Photonics and Optoelectronics Meetings (POEM) 2009: Optoelectronic Devices and Integration, pp.75160-75160, 2009.
DOI : 10.1117/12.841564

T. Tasmin, N. Rouger, G. Xia, L. Chrostowski, and N. A. Jaeger, Design of a 1550nm SiGe/Si quantum-well optical modulator, Photonics North 2010, p.77501, 2010.
DOI : 10.1117/12.870014

URL : https://hal.archives-ouvertes.fr/hal-00545393

N. Rouger, Epicdriver -electronics photonics integrated circuits for gate drivers -towards more efficient integrated power electronics, 2015.

. Docteur, Institut Polytechnique de Grenoble Lauréat de l'agrégation de génie électrique Ancien élève normalien au département EEA de l'ENS Cachan Publications sur la période Septembre, 2005.

J. Crébier and N. Rouger, Industrial and power electronics, book chapter of introducing to circuits and systems, Encyclopedia Of Life Support Systems (EOLSS)

A. Marechal, N. Rouger, J. Crebier, J. Pernot, S. Koizumi et al., Model implementation towards the prediction of J(V) characteristics in diamond bipolar device simulations, Diamond and Related Materials, vol.43, pp.34-42, 2014.
DOI : 10.1016/j.diamond.2014.01.009

URL : https://hal.archives-ouvertes.fr/hal-00968208

B. Sarrazin, N. Rouger, and J. Ferrieux, Performance analysis of different power electronics structures for electric vehicles (EVs), European Journal of Electrical Engineering, vol.16, issue.3-4, pp.3-4, 2013.
DOI : 10.3166/ejee.16.447-463

URL : https://hal.archives-ouvertes.fr/hal-00988234

N. Rouger, L. Benaissa, J. Crébier, J. Widiez, J. Defonseca et al., Packaging à l'échelle du wafer pour les semiconducteurs de puissance dans les convertisseurs multicellulaires, European Journal of Electrical Engineering, vol.16, pp.3-4, 2013.

R. Vafaei, N. Rouger, D. N. To, and J. Crebier, Experimental Investigation of an Integrated Optical Interface for Power MOSFET Drivers. Electron Device Letters, IEEE, vol.33, issue.2, pp.230-232, 2012.
URL : https://hal.archives-ouvertes.fr/hal-00672877

H. Nguyen, J. Coulomb, L. Gerbaud, J. Crébier, and N. Rouger, Application of progressive quadratic response surface method for an oscillation problem optimization, COMPEL, The International Journal for Computation and Mathematics in Electrical and Electronic Engineering, issue.3, pp.31842-857, 2012.
URL : https://hal.archives-ouvertes.fr/hal-00520046

H. Nguyen-xuan, L. Gerbaud, N. Rouger, and J. Crébier, Optimization of a power mosfet and its monolithically integrated self-powering circuits, International Journal of Applied Electromagnetics and Mechanics, vol.37, issue.2, pp.159-171, 2011.

N. Rouger, L. Chrostowski, and R. Vafaei, Temperature Effects on Silicon-on-Insulator (SOI) Racetrack Resonators: A Coupled Analytic and 2-D Finite Difference Approach, Journal of Lightwave Technology, vol.28, issue.9, pp.1380-1391, 2010.
DOI : 10.1109/JLT.2010.2041528

URL : https://hal.archives-ouvertes.fr/hal-00485612

R. Boeck, N. A. Jaeger, N. Rouger, and L. Chrostowski, Series-coupled silicon racetrack resonators and the Vernier effect: theory and measurement, Optics Express, vol.18, issue.24, pp.25151-25157, 2010.
DOI : 10.1364/OE.18.025151

URL : https://hal.archives-ouvertes.fr/hal-00545395

D. Deptuck, . Rouger, L. Jaeger, and . Chrostowski, A trans-Canadian graduate course in silicon nanophotonics. Photons technical review, pp.29-33, 2010.
URL : https://hal.archives-ouvertes.fr/hal-00608500

J. Crebier and N. Rouger, Loss Free Gate Driver Unipolar Power Supply for High Side Power Transistors, IEEE Transactions on Power Electronics, vol.23, issue.3, pp.1565-1573, 2008.
DOI : 10.1109/TPEL.2008.921163

URL : https://hal.archives-ouvertes.fr/hal-00406642

N. Rouger, J. Crebier, and S. Catellani, High-Efficiency and Fully Integrated Self-Powering Technique for Intelligent Switch-Based Flyback Converters, IEEE Transactions on Industry Applications, vol.44, issue.3, pp.826-835, 2008.
DOI : 10.1109/TIA.2008.921435

URL : https://hal.archives-ouvertes.fr/hal-00406632

N. Rouger and J. Crebier, Toward Generic Fully IntegratedGate Driver Power Supplies. Power Electronics, IEEE Transactions on, vol.23, issue.4, pp.2106-2114, 2008.

J. Crébier, . Nguyen, . Vincent, . Rouger, C. Aubard et al., Promotion d'une approche syst??me dans l'int??gration monolithique pour semi-conducteurs de puissance, Revue internationale de g??nie ??lectrique, vol.10, issue.5, pp.527-540, 2007.
DOI : 10.3166/rige.10.527-540

]. L. Chrostowski, N. Rouger, D. Deptuck, and N. A. Jaeger, Silicon Nanophotonics Fabrication: An innovative graduate course, 2010 17th International Conference on Telecommunications, pp.544-551, 2010.
DOI : 10.1109/ICTEL.2010.5478599

URL : https://hal.archives-ouvertes.fr/hal-00476550

N. Rouger, Challenges and benefits of microelectronics for power electronics: from integrated optical driving to optimized power semiconductor switches, 2014 10th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), pp.1-1, 2014.
DOI : 10.1109/PRIME.2014.6872675

T. H. Trinh, J. Crébier, N. Rouger, and Y. Lembeye, Convertisseur de tension, 2012.

L. T. Le, J. Crebier, and N. Rouger, CMOS integrated optical isolator for power transistor gate driver, IECON 2014, 40th Annual Conference of the IEEE Industrial Electronics Society, 2014.
DOI : 10.1109/IECON.2014.7048669

URL : https://hal.archives-ouvertes.fr/hal-01084058

A. Marechal, G. Chicot, N. Rouger, P. Muret, J. Pernot et al., Leakage current conduction mechanisms in atomic layer deposited HfO2, ZrO2 and Al2O3 on O-terminated diamond. International Conference on Diamond and Carbon Materials, 2014. A. Marechal recipient of the Elsevier Young Scholar Award

R. Grezaud, F. Ayel, N. Rouger, and J. Crebier, Monolithically integrated voltage level shifter for Wide Bandgap Devices-based converters, 2014 10th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME), pp.1-4, 2014.
DOI : 10.1109/PRIME.2014.6872759

D. To, N. Rouger, Y. Lembeye, J. Arnould, and N. Corrao, Modeling and characterization of 0.35 um CMOS coreless transformer for gate drivers, Power Semiconductor Devices IC's (ISPSD), 2014 IEEE 26th International Symposium on, pp.330-333, 2014.
URL : https://hal.archives-ouvertes.fr/hal-00989648

N. To, N. Rouger, J. Arnould, N. Corrao, J. Crebier et al., Integrated gate driver circuits with an ultra-compact design and high level of galvanic isolation for power transistors, Integrated Power Systems (CIPS), 2014 8th International Conference on, pp.1-6, 2014.
URL : https://hal.archives-ouvertes.fr/hal-00957347

N. Rouger, J. Widiez, L. Benaissa, B. Imbert, P. Gondcharton et al., 3D Packaging for vertical power devices, Integrated Power Systems (CIPS), 2014 8th International Conference on, pp.1-6, 2014.
URL : https://hal.archives-ouvertes.fr/hal-00989640

A. Maréchal, N. Rouger, J. Crébier, J. Pernot, S. Koizumi et al., Diamond bipolar device simulation, The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, pp.151-154, 2013.
DOI : 10.1109/WiPDA.2013.6695584

R. Grezaud, F. Ayel, N. Rouger, and J. Crébier, An Adaptive Output Impedance Gate Drive Circuit for Safer and More Efficient Control of Wide Bandgap Devices, IEEE Workshop on Wide Bandgap Power Devices and Applications, pp.68-71, 2013.

R. Grezaud, F. Ayel, N. Rouger, and J. Crébier, A specific switching characterization method for evaluation of operating point and temperature impacts on wide bandgap devices, The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications, pp.104-107, 2013.
DOI : 10.1109/WiPDA.2013.6695573

URL : https://hal.archives-ouvertes.fr/hal-00988288

N. Rouger, L. Benaissa, J. Widiez, B. Imbert, V. Gaude et al., True 3D packaging solution for stacked vertical power devices, 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD), pp.90-100, 2013.
DOI : 10.1109/ISPSD.2013.6694405

URL : https://hal.archives-ouvertes.fr/hal-00843807

R. Vafaei, J. Crébier, and N. Rouger, Performance measurements of an optical detector designed for monolithic integration with a power VDMOS, 2013 IEEE International Instrumentation and Measurement Technology Conference (I2MTC), pp.1609-1614, 2013.
DOI : 10.1109/I2MTC.2013.6555686

URL : https://hal.archives-ouvertes.fr/hal-00828612

T. H. Trinh, T. H. Phung, J. Crébier, N. Rouger, and Y. Lembeye, Integrated low power low voltage isolated switch mode power supply, IECON 2012, 38th Annual Conference on IEEE Industrial Electronics Society, pp.500-505, 2012.
DOI : 10.1109/IECON.2012.6388773

URL : https://hal.archives-ouvertes.fr/hal-00820246

L. Benaissa, N. Rouger, J. Widiez, J. C. Crebier, J. Dafonseca et al., A vertical power device conductive assembly at wafer level using direct bonding technology, 2012 24th International Symposium on Power Semiconductor Devices and ICs, pp.77-80, 2012.
DOI : 10.1109/ISPSD.2012.6229027

URL : https://hal.archives-ouvertes.fr/hal-00820244

L. Kerachev, K. Vladimirova, V. Gaude, J. Widiez, J. Crebier et al., Implementation of monolithic multiple vertical power diodes in a multiphase converter, 2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and Exposition (APEC), pp.169-175, 2012.
DOI : 10.1109/APEC.2012.6165815

URL : https://hal.archives-ouvertes.fr/hal-00706742

J. Trung-hieu-trinh, N. Crébier, Y. Rouger, and . Lembeye, An Integration of Dual Active Bridge DC/DC Converters Used in Micro Converters Networks, Power Electronics/Intelligent Motion/Power Quality PCIM Europe Conference 2012, p.page, 2012.

B. Sarrazin, N. Rouger, J. P. Ferrieux, and Y. Avenas, Benefits of cascaded inverters for electrical vehicles' drive-trains, 2011 IEEE Energy Conversion Congress and Exposition, pp.1441-1448, 2011.
DOI : 10.1109/ECCE.2011.6063950

URL : https://hal.archives-ouvertes.fr/hal-00728008

B. Sarrazin, N. Rouger, J. P. Ferrieux, and J. C. Crebier, Cascaded Inverters for electric vehicles: Towards a better management of traction chain from the battery to the motor?, 2011 IEEE International Symposium on Industrial Electronics, pp.153-158, 2011.
DOI : 10.1109/ISIE.2011.5984149

T. Simonot, H. X. Nguyen, N. Rouger, J. C. Crebier, A. Bourennane et al., Towards reduced threshold voltages for vertical power Mosfet transistors, 2011 IEEE International Symposium on Industrial Electronics, pp.444-449, 2011.
DOI : 10.1109/ISIE.2011.5984199

URL : https://hal.archives-ouvertes.fr/hal-00607324

N. Rouger, J. Crebier, and O. Lesaint, Integrated low power and high bandwidth optical isolator for monolithic power MOSFETs driver, 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs, pp.356-359, 2011.
DOI : 10.1109/ISPSD.2011.5890864

URL : https://hal.archives-ouvertes.fr/hal-00599257

T. Simonot, N. Rouger, J. Crébier, V. Gaude, and I. Pheng, A novel power system in package with 3D chip on chip interconnections of the power transistor and its gate driver, Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on, pp.328-331, 2011.
URL : https://hal.archives-ouvertes.fr/hal-00599317

T. Simonot, N. Rouger, J. Crébier, and J. Arnould, Design and characterization of a signal insulation coreless transformer integrated in a CMOS gate driver chip, Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on, pp.360-363, 2011.
URL : https://hal.archives-ouvertes.fr/hal-00599260

X. Hoa-nguyen, L. Gerbaud, N. Rouger, and J. Crébier, Flexible Parameter Identification Tool for semiconductor Device Design, 11th International Workshop on Optimization and Inverse Problems in Electromagnetism, oipe2010, pp.978-954, 2010.

X. Hoa-nguyen, L. Gerbaud, N. Rouger, and J. Crébier, optimization of a power MOSFET And Its Monolithically integrated self-powering Circuits, 11th International Workshop on Optimization and Inverse Problems in Electromagnetism, pp.978-954, 2010.

T. Simonot, J. Crébier, N. Rouger, and V. Gaude, 3D hybrid integration and functional interconnection of a power transistor and its gate driver, 2010 IEEE Energy Conversion Congress and Exposition, pp.1268-1274, 2010.
DOI : 10.1109/ECCE.2010.5617816

URL : https://hal.archives-ouvertes.fr/hal-00520083

T. Simonot, N. Rouger, and J. Crébier, Design and characterization of an integrated CMOS gate driver for vertical power MOSFETs, 2010 IEEE Energy Conversion Congress and Exposition, pp.2206-2213, 2010.
DOI : 10.1109/ECCE.2010.5617824

URL : https://hal.archives-ouvertes.fr/hal-00520085

T. Tasmin, N. Rouger, G. Xia, L. Chrostowski, and N. A. Jaeger, Design of a 1550nm SiGe/Si quantum-well optical modulator, Photonics North 2010, p.77501, 2010.
DOI : 10.1117/12.870014

URL : https://hal.archives-ouvertes.fr/hal-00545393

W. Shi, Z. Duan, R. Vafaei, N. Rouger, B. Faraji et al., Simulation of a 1550-nm InGaAsP-InP transistor laser, Photonics and Optoelectronics Meetings (POEM) 2009: Optoelectronic Devices and Integration, pp.75160-75160, 2009.
DOI : 10.1117/12.841564

N. Rouger and L. Chrostowski, Simulation of coupling between parallel SOI nanowaveguides and its dependence on temperature, 2009 IEEE/LEOS International Conference on Optical MEMS and Nanophotonics, pp.103-104, 2009.
DOI : 10.1109/OMEMS.2009.5338536

N. Rouger and J. Crebier, Integrated Photoreceiver For An Isolated Control Signal Transfert In Favour Of Power Transistors, 2008 20th International Symposium on Power Semiconductor Devices and IC's, pp.213-216, 2008.
DOI : 10.1109/ISPSD.2008.4538936

URL : https://hal.archives-ouvertes.fr/hal-00282182

N. Rouger, J. Crebier, H. T. Manh, and C. Schaeffer, Toward integrated gate driver supplies : Practical and analytical studies of high-voltage capabilities, 2008 IEEE Power Electronics Specialists Conference, pp.873-879, 2008.
DOI : 10.1109/PESC.2008.4592039

N. Rouger, J. Crebier, R. Mitova, L. Aubard, and C. Schaeffer, Fully integrated driver power supply for insulated gate transistors, 2006 IEEE International Symposium on Power Semiconductor Devices & IC's, pp.1-4, 2006.
DOI : 10.1109/ISPSD.2006.1666151

N. Rouger, J. Catellani, and . Crébier, High Efficiency and Fully Integrated Self Powering Technique For VIPer Based Flyback Converters, Industry Applications Conference 41st IAS Annual Meeting, pp.2503-2510, 2006.
URL : https://hal.archives-ouvertes.fr/hal-00198345

N. Rouger, J. Crebier, L. Aubard, and C. Schaeffer, Toward Generic Fully Integrated Gate Driver Power Supplies, IECON 2006, 32nd Annual Conference on IEEE Industrial Electronics, pp.1866-1871, 2006.
DOI : 10.1109/IECON.2006.347252

URL : https://hal.archives-ouvertes.fr/hal-00406629

N. Rouger, R. Vafaei, N. To, L. T. Le, N. Corrao et al., Transfert isolé des signaux de commande dans le contexte de l'intégration pour les composants actifs d'électronique de puissance, Articles publiés de conférences nationales à comité de lecture Symposium de Génie Electrique SGE 2014, 2014.

R. Grezaud, F. Ayel, N. Rouger, and J. Crebier, Méthodes spécifiques de caractérisation en dynamique et de commande de composants grand gap en environnement variable, Symposium de Génie Electrique SGE 2014, 2014.

N. Rouger, R. Vafaei, D. N. To, and J. Crébier, Etude expérimentale d'un étage intégré d'isolation par voie optique pour transistors de puissance, Electronique de Puissance du Futur 2012, p.page, 2012.

C. Gineste, T. Bouchet, O. Gatti, J. Crébier, P. Austin et al., Vers une filière et un support de conception EDA (Electronic Design Automation) des fonctions de coupure spécifiques, 2012.

N. Rouger, L. Benaissa, J. Crébier, J. Widiez, J. Defonseca et al., Packaging à l'échelle du wafer pour les convertisseurs multicellulaires, Electronique de Puissance du Futur 2012, p.page, 2012.

B. Sarrazin, N. Rouger, and J. Ferrieux, Evaluation des Performances d'une Chaîne de Traction pour Véhicule Electrique pour Différentes Structures d'Electronique de Puissance, Electronique de Puissance du Futur 2012, p.page, 2012.

N. Trung-hieu-trinh, Y. Rouger, J. Lembeye, and . Crébier, Convertisseur intégré pour les applications réseaux de micro convertisseurs, Electronique de Puissance du Futur 2012, p.page, 2012.

T. Simonot, N. Rouger, and J. Crébier, Conception, intégration 3D et caractérisation d'un circuit de commande CMOS pour transistors de puissance, Électronique de Puissance du Futur 13ème édition du colloque, 2010.

L. Sanchez and . Gerbaud, Tension de seuil réduite pour composants de puissance à grille: Intérêts et conséquences, 13ème édition du colloque Électronique de Puissance du Futur, p.4, 2010.

N. Rouger and J. Crébier, Intégration Monolithique d'un Récepteur Optique au sein de Transistors de Puissance : Enjeux et Possibilités, EPF 2008 XIIème colloque Electronique de Puissance du Futur, pp.141-146, 2008.

J. Crébier, . Nguyen, . Vincent, . Rouger, C. Aubard et al., Promotion d'une approche syst??me dans l'int??gration monolithique pour semi-conducteurs de puissance, Electronique de Puissance du Futur (EPF), 2006.
DOI : 10.3166/rige.10.527-540

A. Maréchal, G. Chicot, N. Rouger, P. Muret, J. Pernot et al., Determination of band diagram alignments of atomic layer deposited HfO2, ZrO2 and Al2O3 on O-terminated diamond, Communications à des congrés 20th International Hasselt Diamond Workshop on CVD diamond, 2015.

N. Rouger, G2elab and hybrid and monolithic integration for power semiconductor devices, The 1st Tsukuba-Grenoble Symposium, 2014.

N. Rouger, J. Widiez, L. Benaissa, B. Imbert, B. Gondcharton et al., Advanced Wafer Level Packaging Technology by Layer Transfer Engineering:Application to 3D Packaging for vertical power devices, IMAPS, 2014.
URL : https://hal.archives-ouvertes.fr/hal-01092423

A. Maréchal, N. Rouger, J. Crébier, J. Pernot, S. Koizumi et al., Models and parameters study for diamond electronic devices simulations, JSAP-MRS Joint Symposia, 2013.

A. Maréchal, N. Rouger, J. Crébier, J. Pernot, S. Koizumi et al., Parameter adjustment for diamond electronic devices simulation, 18th International Hasselt Diamond Workshop on CVD diamond, 2013.

N. Jaeger, . Deptuck, L. Rouger, and . Chrostowski, Current Trends in Silicon Photonics in the Context of Higher Education, CMOS Emerging Technologies Workshop, 2010.
URL : https://hal.archives-ouvertes.fr/hal-00608293

M. Torres, . Rouger, . Vafaei, . Amin, . Boeck et al., Soi nanophotonic devices analysis and fabrication, Pacific Centre for Advanced Materials and Microstructures (PCAMM) Annual Meeting, 2008.

N. Rouger and J. Crebier, Hybrid and monolithic integration for power semiconductor devices and their associated ic's, STmicroelectronics Milano meeting, 2014.

N. Rouger and P. Jeannin, Composants gan de puissance : possibilités et contraintes associées pour une utilisation dans les convertisseurs à haute fréquence, 2013.

N. Rouger, Wide bandgap material, gan. Workshop EPFL -Lanef, 2012.

N. Rouger, Commande optique de composants de puissance, Journées Thématiques GdR Seeds, 2012.

N. Rouger, état de l'art autour de l'intégration des éléments périphériques des semiconducteurs de puissance, Journées Thématiques GdR Seeds, 2011.

N. Rouger, Commande optique de composants de puissance, 2010.

N. Rouger, Contrôle optique intégré pour les semiconducteurs de puissance et les convertisseurs d'énergie, Conseil scientifique du G2Elab, 2010.

N. Rouger, Soi nanophotonics, 2009.

F. Capy and N. Rouger, Nouvelles fonctions de commutation de puissance intégrées sur silicium, Journées Thématiques GdR Seeds, 2005.

N. Rouger and P. Jeannin, Grands gaps : Drivers, système et fiabilité, 2014.

N. Rouger and P. Jeannin, Grands gaps : Drivers, système et fiabilité, 2014.

N. Rouger and P. Jeannin, Grands gaps : Drivers, système et fiabilité, 2014.

N. Rouger, Rapport de fin de projet, anr sipowlight, 2014.

N. Rouger and P. Jeannin, Grands gaps : vers une intégration 3d et monolithique des périphériques de commande et de contrôle des composants de puissance, Synthèse Annuelle de l'Observatoire des Micro et Nano Technologies, 2014.

N. Rouger and P. Jeannin, Grands gaps : technologies et composants de puissace, 2013.

N. Rouger and P. Jeannin, Grands gaps : Drivers, système et fiabilité, 2013.

N. Rouger and P. Jeannin, Grands gaps : Drivers, système et fiabilité, 2013.

N. Rouger, Rapport à t0+30, anr sipowlight, Compte rendu intermédiaire, 2013.

N. Rouger and P. Jeannin, Driver gan haute fréquence -contribution à la synthèse annuelle, groupe grands gaps, Synthèse Annuelle de l'Observatoire des Micro et Nano Technologies, 2013.

N. Rouger, Rapport à t0+18, anr sipowlight. Compte rendu à mi projet, 2012.

N. Rouger, Rapport à t0+6, anr sipowlight, Compte rendu intermédiaire, 2011.

N. Rouger, Intégration monolithique des fonctions d'interface au sein de composants de puissance à structure verticale, 2008.

L. T. Le, D. Colin, J. Crebier, and N. Rouger, CMOS gate driver with integrated optical receiver for power electronics applications, 2015 17th European Conference on Power Electronics and Applications (EPE'15 ECCE-Europe), 2015.
DOI : 10.1109/EPE.2015.7309437

URL : https://hal.archives-ouvertes.fr/hal-01208262

N. Rouger, CMOS Gate Drivers for High Speed -High Voltage Wide Bandgap Power Switches, CMOSETR, 2015.
URL : https://hal.archives-ouvertes.fr/hal-01159160