M. Smith, Demand-Led Growth Theory: An Historical Approach. Sraffa Conference, 2010.

K. Eichforn, LEDs in Automotive Lighting, Proc. of SPIE, 2006.

P. Pohlmann, High performance LED lamps for the automobile: needs and opportunities, Manufacturing LEDs for Lighting and Displays, 2007.
DOI : 10.1117/12.760978

F. Bedu, support de formation sur l'éclairage automobile, 2012.

S. Groetsch, Novel Chip size LEDs in a combined High/Low Beam headlamp demonstrator based on a single reflector optic, ISAL conference

E. F. Schubert, Light Emitting Diodes, chapitre 1, 2006.

M. Mai, Lighting systems at Mercedes-Benz, a symbiosis of innovation and safety. ISAL Conference, 2011.

P. Lumiblade, Fiche technique du produit Philips Lumiblade OLED Panel GL350, 2012.

W. Polhmann, Miniaturization in LED-Technology-Opportunities and risks. ISAL conference

K. Kikouchi, Thermal simulation of LED unit for Headlamp and Rear lamp, ISAL conference, 2011.

. Hella, light source for the future, technical document. www.hella.com

X. Fan, Effect of temperature gradient on moisture diffusion in high power devices and the applications in LED packages, 2013 IEEE 63rd Electronic Components and Technology Conference, 2013.
DOI : 10.1109/ECTC.2013.6575765

E. F. Schubert, Light Emitting Diodes, chapitre 4, 2006.

S. Sugahara, Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN, Japanese Journal of Applied Physics, vol.37, issue.Part 2, No. 4A, p.398, 1998.
DOI : 10.1143/JJAP.37.L398

A. Gasse, Les diodes électroluminescentes pour l'éclairage. Chapitre 5 : le packaging, Les diodes électroluminescentes pour l'éclairage, pp.125-127, 2008.

A. Dussaigne, Manuscrit de thèse: Les Diodes électroluminescentes blanches monolithiques, 2005.

P. De and . Mierry, Les diodes electroluminescentes pour l'éclairage, substrats pour LEDs à base de Nitrures-III, Hermes Editions, 2008.

Z. Z. Chen, Ohmic contact formation of Ti/Al/Ni/Au to n-GaN by two-step annealing method, Materials Science and Engineering: B, vol.111, issue.1, pp.36-39, 2004.
DOI : 10.1016/j.mseb.2004.03.014

J. Duboz, matériaux semi-conducteurs à grands gap III-V à base de GaN, pp.995-996, 1995.

C. Zellweger, Manuscrit de thèse: Realization of GaN-based light emitting devices, p.2852, 2003.

C. S. Lee, Investigation of oxidation mechanism for ohmic formation in Ni/Au contacts to ptype GaN layers, Applied Physics, issue.79, p.3815, 2001.

E. F. Schubert, Light Emitting Diodes, 2006.

P. Gilet, Les diodes électroluminescente pour l'éclairage, chapitre 4 : le process des diodes, Hermes Editions, 2008.

P. Lumileds, Fiche technique produit Luxeon K2, 2010.

P. Lumileds, Fiche technique du produit Luxeon Flip Chip, 2013.

W. Wong, Excimer laser liftoff and processing of GaN thin films and light-emitting heterostructures, EECS, 1999.

M. S. Minsky, Room???temperature photoenhanced wet etching of GaN, Applied Physics Letters, vol.68, issue.11, p.1531, 1996.
DOI : 10.1063/1.115689

Y. Fang, High efficiency and output power of near-ultraviolet light-emitting diodes grown on GaN substrate with back-side etching, Physica Scripta, vol.85, issue.4, p.45703, 2012.
DOI : 10.1088/0031-8949/85/04/045703

. Osram, fiche technique du produit série Topled LD G5AP, 2011.

E. F. Schubert, Light Emitting Diodes, Chapitre 11, 2006.

A. C. Corfa and . Stm, Manuscrit de DRT: Simulation et caractérisation thermique de modules d'éclairage a LEDs en intégration Chip On Board, 2009.

P. Lumileds, fiche technique des produits de la série Luxéon F

M. H. Chang, Light emitting diodes reliability review. Microelectronics Reliability, 2012.

P. Led, Lighting Explained, Understanding LED sources, fixtures, applications, and opportunities. Philips Solid-State Lighting Solutions, 2010.

S. Hallereau, Reverse costing analysis, composant CREE Xlamp XP-E White LED, Yole development, 2010.

R. Fraux, Reverse costing analysis, composant Seoul Z power Z5 White LED, Yole développement, 2010.

K. Muller, Low Rth die Attach for High Brightness LEDs, Osram. ISAl conference, 2011.

. Suntronic, Fiche technique d'encre argent, Suntronic® Silver ink for inkjet printing process, 2011.

R. Jordan, Advanced Packaging for High Power LEDs, Fraunhofer IZM Berlin, 2013.

C. A. Harper, Electronic packaging end interconnection Handbook, second edition. electronic packaging interconnection series, 1997.

G. Chen, Transient Thermal Performance of IGBT Power, IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, vol.12, issue.1, 2012.

W. J. Grieg, Integrated Circuit Packaging, assembly and Interconnections, 2006.

G. Harman, Wire Bonding in Microelectronics, second edition, 1997.

T. Nshanian, Effect of residual stress on the electrical activity of dislocations in GaN light emitting diodes. Microeectronics Reliability, pp.9-10, 2012.

J. D. Reed, High density interconnect at 10µm pitch with mechanically keyed Cu/Sn-Cu and Cu-Cu bonding for 3-D integration, 2010.

P. Dumontet, Support de formation: Evaluation de la qualité d'un procédé électronique, 2012.

P. Lightlab, LED substrates technology, Philips Lighting/Lightlab, 2011.

P. Lumileds, Luxeon rebel board design and assembly application brief, 2008.

N. Sabran, Led System for Signal functions Technical description, Valeo, 2010.

A. Uddin, Study of degradation mechanism of blue light emitting diodes, Thin Solid Films, vol.483, issue.1-2, pp.378-81, 2005.
DOI : 10.1016/j.tsf.2005.01.018

G. Meneghesso, Failure modes and mechanisms of DC-aged GaN LEDs. physica status solidi, pp.389-392, 2002.

K. Kohler, Control of the Mg doping profile in III-N light-emitting diodes and its effect on the electroluminescence efficiency, Journal of Applied Physics, vol.97, issue.10, 2005.
DOI : 10.1063/1.1901836

E. Suhir, New approach to the high quality epitaxial growth of lattice-mismatched materials, Applied Physics Letters, pp.49-140, 1986.

E. Suhir, Stresses in bi-material GaN assemblies, Journal of Applied Physics, vol.110, issue.7, 2011.
DOI : 10.1063/1.3638702

L. Trevisanello, Manuscrit de thèse: Analysis of the Temperature impact on Reliability on GaN based LEDs, 2008.

J. and D. Normatif, Document JEP157 -Recommended ESD-CDM Target Levels, 2009.

D. L. Barton, Degradation of blue AlGaN/InGaN/GaN LEDs subjected to high current pulses. ieee international reliability physics symposium, 1995.

H. Kim, Electromigration-induced failure of GaN multi-quantum well light emitting diode, Electronics Letters, vol.36, issue.10, pp.908-918, 2000.
DOI : 10.1049/el:20000657

M. Meneghini, Reversible Degradation of Ohmic Contacts on p-GaN for Application in High-Brightness LEDs, IEEE Transactions on Electron Devices, vol.54, issue.12, pp.3245-51, 2007.
DOI : 10.1109/TED.2007.908900

R. K. Traeger, Hermeticity in polymeric lid sealants. 25th Electronic Components, conf, p.361, 1976.

P. Lumileds, Fiche technique du produit Altilon 1X4, 2010.

L. Samsung, Fiche technique du produit 10W AH534A, 2012.

A. C. Corfa and . Stm, Manuscrit de DRT: Simulation et caractérisation thermique de modules d'éclairage a LEDs en intégration Chip On Board, 2009.

Y. S. Muzychka, Influence of Geometry and Edge Cooling on Thermal Spreading Resistance, Journal of Thermophysics and Heat Transfer, vol.20, issue.2, 2006.
DOI : 10.2514/1.14807

J. M. Shah, Experimental analysis model for anomalously high ideality factors(n2.0) in

. Algan, GaN p-n junction diodes, journal of applied physics, vol.94, p.2627, 2003.

Y. Deshayes, Manuscrit de thèse: Diagnostic de défaillances de systèmes optoélectroniques émissifs pour applications de télécommunication : Caratérisations électro-optiques et simulations thermomécaniques, 2002.

H. Mathieu, Physique des semiconducteurs et des composants électroniques, Edition MASSON, 1987.

E. M. Grundmann, The physics of semiconductors : an introduction including devices and nanophysics, 2006.

F. A. Padovani, Field and thermionic-field emission in Schottky barriers, Solid-State Electronics, vol.9, issue.7, p.695, 1966.
DOI : 10.1016/0038-1101(66)90097-9

R. Stratton, Theory of Field Emission from Semiconductors, Physical Review, vol.125, issue.1, pp.67-82, 1962.
DOI : 10.1103/PhysRev.125.67

H. Morkoc, Handbook of Nitride Semiconductors and Devices : Electronic and Optical Processes in Nitrides, 2008.

Y. Deshayes, Stark Effects Model Used to Highlight Selective Activation of Failure Mechanisms in MQW InGaN, GaN Light-Emitting Diodes. Device and Materials Reliability IEEE Transactions on, issue.10 1, pp.164-170, 2010.

P. Lumileds, Fiche technique du produit Altilon 1X4, 2010.

M. Dal and L. , Phosphors for LED-based light sources: Thermal properties and reliability issues. Microelectronics Reliability, pp.9-10, 2012.

C. D. Breach, New observations on intermetallic compound formation in gold ball bonds: general growth patterns and identification of two forms of Au4Al, Microelectronics Reliability, vol.44, issue.6, pp.973-981, 2004.
DOI : 10.1016/j.microrel.2004.02.013

E. F. Schubert, Light Emitting Diodes, pp.103-104, 2006.

J. Shah, Estimating bond wire current-carrying capacity. Power systems design, publication ON Semiconductor, 2012.

K. B. Nam, Optical properties of AlN and GaN in elevated temperatures, Applied Physics Letters, vol.85, issue.16, 2004.
DOI : 10.1063/1.1806545

E. F. Schubert, Light-Emitting Diodes, chapitre 5, pp.98-100, 2006.

E. R. Schubert, Light Emitting-Diodes, chapitre 4, pp.63-71, 2006.

B. Hamon, N-contacts degradation analysis of white flip chip LEDs during reliability tests. IRPS conference, 2014.

F. Delor-jestin, Durability of crosslinked polydimethylsyloxanes: the case of composite insulators, Science and Technology of Advanced Materials, vol.13, issue.2, 2008.
DOI : 10.1002/pol.1983.170210511
URL : https://hal.archives-ouvertes.fr/hal-00399463

F. Virlogeux, Evaluation of cross-linking after accelerated photo-ageing of silicone rubber, Polymer International, vol.53, issue.2, pp.163-168, 2004.
DOI : 10.1002/pi.1329

K. Xiang, Accelerated thermal ageing studies of polydimethylsiloxane (PDMS) rubber, Journal of Polymer Research, vol.91, issue.5, pp.1-7, 2012.
DOI : 10.1007/s10965-012-9869-6

H. C. Chen, Improvement on lumens efficiency in White LEDs by roughened dispensing package, Nanoelectronics Conference (INEC) IEEE 4th International, pp.1-2, 2011.

K. Zeng, Kirkendal void formation in eutectic SnPb solder joints on bare Cu and its effect on joint reliability, 2005.

C. Lei, Void formation and surface energies in Cu(InGa)Se2, Journal of Applied Physics, vol.100, issue.7, p.73518, 2006.
DOI : 10.1063/1.2357422

H. Xu, Intermetallic phase transformations in Au???Al wire bonds, Intermetallics, vol.19, issue.12, pp.1808-1816, 2011.
DOI : 10.1016/j.intermet.2011.07.003

P. Lumileds, Fiche technique du produit Altilon 1X4, 2010.

R. Veysseyre, Statistique et probabilités pour l'ingénieur. Edition Dunod, 2001.

M. Fukuda, Reliability and Degradation of Semiconductor Lasers and LEDs (Optoelectronics Library) Optoelectronics Library, 1991.

G. Meneghesso, Recent results on the degradation of white LEDs for lighting, Journal of Physics D: Applied Physics, vol.43, issue.35, p.35, 2010.
DOI : 10.1088/0022-3727/43/35/354007
URL : https://hal.archives-ouvertes.fr/hal-00569692

E. F. Schubert, Light Emitting Diode, chapitre 4, 2006.

M. H. Chang, Light Emitting Diode reliability review. Microelectronics Reliability, 2012.

H. C. Chen, Improvement on lumens efficiency in White LEDs by roughened dispensing package, International NanoElectronic Conference, 2011.

M. Dal and L. , Phosphors for LED-based light sources: Thermal properties and reliability issues. Microelectronics Reliability, pp.9-10, 2012.

T. Okamoto, Thermal Endurance, Electrical Insulating, and Mechanical Properties of Hybrid Made with Poly(dimethylsiloxane) and Tetraethoxysilane, Japanese Journal of Applied Physics, vol.47, issue.1, pp.521-526, 2008.
DOI : 10.1143/JJAP.47.521

E. F. Schubert, Light-Emitting Diodes, chapitre 5, pp.98-100, 2006.

W. Kwapil, Influence of surface texture on the defect-induced breakdown behavior of multicrystalline silicon solar cells Progress in Photovoltaics: Research and Applications of crystalline silicon solar cells: Experiment and Simulation, Photovoltaic Specialists Conference (PVSC), IEEE 39th, pp.534-543, 2013.

E. F. Schubert, Light Emitting Diodes, pp.103-104, 2006.

T. Nshanian, Effect of residual stress on the electrical activity of dislocations in GaN light emitting Diodes. Microelectronics Reliability, pp.9-10, 2012.

N. Ueta, Residual Stress Distribution in Stacked LSI Chips Mounted by Flip Chip Technology, 2006 International Conference on Electronic Materials and Packaging, 2006.
DOI : 10.1109/EMAP.2006.4430593

M. K. Rahim, Fundamentals of delamination initiation and growth in flip chip assemblies, Proceedings Electronic Components and Technology, 2005. ECTC '05., 2005.
DOI : 10.1109/ECTC.2005.1441420

A. A. Griffith, The Phenomena of Rupture and Flow in Solids, Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, vol.221, issue.582-593, pp.163-198, 1921.
DOI : 10.1098/rsta.1921.0006

B. Hamon, N-contacts degradation analysis of white flip chip LEDs during reliability tests, 2014 IEEE International Reliability Physics Symposium, 2014.
DOI : 10.1109/IRPS.2014.6861140

X. Guo, Current crowding in GaN/InGaN light emitting diodes on insulating substrates, Journal of Applied Physics, vol.90, issue.8, 2001.
DOI : 10.1063/1.1403665

J. Yun, Current, voltage and temperature distribution modeling of light-emitting diodes based on electrical and thermal circuit analysis, Semiconductor Science and Technology, vol.28, issue.8, p.8, 2013.
DOI : 10.1088/0268-1242/28/8/085001

A. E. Chernyakov, Experimental and theoretical study of electrical, thermal, and optical characteristics of InGaN/GaN high-power flip-chip LEDs, physica status solidi (a), vol.78, issue.1, pp.466-469, 2013.
DOI : 10.1002/pssa.201200658

. Production-scientifique-conférence-sans-acte-@bullet-journée-puissance, B. Imaps-tours, L. Chambion, V. Mendizabal, L. Carreau et al., Présentation orale -10 octobre 2012 « Eclairage automobile : Les conséquences de l'intégration de DELs blanches de puissance sur la stratégie des tests de fiabilité, Conférences avec actes ? European MicroElectronics Packaging Conference, EMPC Grenoble. Présentation orale ? 10 Septembre 2013 « Electro-optical assessment of white LEDs multichip modules for automotive applications: Failure analysis and packaging influence