[En ligne] Disponible sur: http://www.maxisciences.com/rover-curiosity/des- radiations-cosmiques-seraient-a-l-039-origine, pp.18-2014 ,
« Rayons cosmiques galactiques et restes de supernovae », Newtron Monitor Database, 13-févr-1919. [En ligne]. Disponible sur, p.338 ,
« Les supernovae, sources de rayons cosmiques ? » [En ligne] Disponible sur: http://www.cieletespace.fr/evenement/4861_les-supernovae-sources-de-rayons- cosmiques, Consulté le, pp.19-2013 ,
Nuclear Tracks in Solids, Scientific American, vol.220, issue.6, 1975. ,
DOI : 10.1038/scientificamerican0669-30
En ligne] Disponible sur, pp.19-2013 ,
[En ligne] Disponible sur: http://science.nasa.gov/science-news/science-at- nasa, Consulté le, pp.19-2013, 2008. ,
Disponible sur, Les eruptions solaires ». [En ligne], pp.19-2013 ,
Radiation-matter interaction, in space radiation environment and its effects on spacecraft components and systems, Cépaduès éd, 2004. ,
Universal damage factor for radiation-induced dark current in silicon devices, IEEE Transactions on Nuclear Science, vol.47, issue.6, pp.2451-2459, 2000. ,
DOI : 10.1109/23.903792
« Une Nouvelle Approche de la Sélection des Composants de Type MOS pour l'Environnement Radiatif Spatial = A new approach to select MOS devices for the radiative space environment, 1998. ,
Total-dose radiation hardness assurance, IEEE Transactions on Nuclear Science, vol.50, issue.3, pp.552-564, 2003. ,
DOI : 10.1109/TNS.2003.813130
Dose rate and annealing effects on total dose response of MOS and bipolar circuits, IEEE Transactions on Nuclear Science, vol.42, issue.6, pp.1567-1574, 1995. ,
DOI : 10.1109/23.488751
Total ionizing dose effects in MOS oxides and devices, IEEE Transactions on Nuclear Science, vol.50, issue.3, pp.483-499, 2003. ,
DOI : 10.1109/TNS.2003.812927
Total Ionizing Dose Versus Displacement Damage Dose Induced Dark Current Random Telegraph Signals in CMOS Image Sensors, IEEE Transactions on Nuclear Science, vol.58, issue.6, pp.3085-3094, 2011. ,
DOI : 10.1109/TNS.2011.2171005
Review of displacement damage effects in silicon devices, IEEE Transactions on Nuclear Science, vol.50, issue.3, pp.653-670, 2003. ,
DOI : 10.1109/TNS.2003.813197
Estimation of Single Event Transient Voltage Pulses in VLSI Circuits From Heavy-Ion-Induced Transient Currents Measured in a Single MOSFET, IEEE Transactions on Nuclear Science, vol.54, issue.4, pp.1037-1041, 2007. ,
DOI : 10.1109/TNS.2007.891397
Monte-Carlo simulations to quantify neutron-induced multiple bit upsets in advanced SRAMs, IEEE Transactions on Nuclear Science, vol.52, issue.5, pp.1538-1544, 2005. ,
DOI : 10.1109/TNS.2005.855823
URL : https://hal.archives-ouvertes.fr/hal-00328657
Impact of Heavy Ion Energy and Nuclear Interactions on Single-Event Upset and Latchup in Integrated Circuits, Impact of Heavy Ion Energy and Nuclear Interactions on Single-Event Upset and Latchup in Integrated Circuits, pp.2303-2311, 2007. ,
DOI : 10.1109/TNS.2007.909844
Single-event upset and snapback in silicon-on-insulator devices and integrated circuits, IEEE Transactions on Nuclear Science, vol.47, issue.6, pp.2165-2174, 2000. ,
DOI : 10.1109/23.903749
Heavy ion induced snapback in CMOS devices, IEEE Transactions on Nuclear Science, vol.36, issue.6, pp.2367-2374, 1989. ,
DOI : 10.1109/23.45450
Single event gate rupture in thin gate oxides, IEEE Transactions on Nuclear Science, vol.44, issue.6, pp.2345-2352, 1997. ,
DOI : 10.1109/23.659060
Charge-based MOS transistor modeling: the EKV model for lowpower and RF IC design, 2006. ,
DOI : 10.1002/0470855460
RF Circuit Implications of Moderate Inversion Enhanced Linear Region in MOSFETs, IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications, vol.51, issue.2, pp.319-328, 2004. ,
DOI : 10.1109/TCSI.2003.822400
Re-interpreting the MOS transistor via the inversion coefficient and the continuum of gms, 9th International Conference on Electronics, Circuits and Systems, pp.1179-1182, 2002. ,
Comparison of 60Co Response and 10 KeV X-Ray Response in MOS Capacitors, IEEE Transactions on Nuclear Science, vol.30, issue.6, pp.4377-4381, 1983. ,
DOI : 10.1109/TNS.1983.4333141
Structure and Imperfections in Amorphous and Crystalline Dioxide, 2000. ,
: Direct Measurement of the Drift Mobility and Lifetime, Physical Review Letters, vol.30, issue.26, pp.1333-1336, 1973. ,
DOI : 10.1103/PhysRevLett.30.1333
« A bulkcontrolled temperature and power supply independent CMOS voltage reference, 2008 Joint 6th International IEEE Northeast Workshop on Circuits and Systems and TAISA Conference, pp.109-112, 2008. ,
Channel Length Dependence of the Body-Factor Effect in NMOS Devices, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol.2, issue.1, pp.2-4, 1983. ,
DOI : 10.1109/TCAD.1983.1270015
Temperature dependence of threshold voltage in thin-film SOI MOSFETs, IEEE Electron Device Letters, vol.11, issue.8, pp.329-331, 1990. ,
DOI : 10.1109/55.57923
CMOS radiation sensor with binary output, IEEE Transactions on Nuclear Science, vol.42, issue.3, pp.174-178, 1995. ,
DOI : 10.1109/23.387358
Device electronics for integrated circuits, 2003. ,
Influence of Fin Width on the Total Dose Behavior of p-Channel Bulk MuGFETs, IEEE Electron Device Letters, vol.31, issue.3, pp.243-245, 2010. ,
DOI : 10.1109/LED.2009.2039633
« Channel length impact on radiation-induced threshold voltage shift in N-MOSFET devices at low gamma rays radiation doses, 1999 IEEE Nuclear Science Symposium, pp.401-407, 1999. ,
Separation of effects of oxide-trapped charge and interface-trapped charge on mobility in irradiated power MOSFETs, IEEE Transactions on Nuclear Science, vol.40, issue.6, pp.1307-1315, 1993. ,
DOI : 10.1109/23.273537
Modeling of radiation-induced mobility degradation in MOSFETs, 1997 21st International Conference on Microelectronics. Proceedings, pp.355-356, 1997. ,
DOI : 10.1109/ICMEL.1997.625271
Augier, « Effects of radiation?induced oxide?trapped charge on inversion?layer hole mobility at 300 and 77 K », Appl. Phys. Lett, vol.60, pp.25-3156, 1992. ,
A Simple Model for Separating Interface and Oxide Charge Effects in MOS Device Characteristics, IEEE Transactions on Nuclear Science, vol.31, issue.6, pp.1497-1501, 1984. ,
DOI : 10.1109/TNS.1984.4333537
Stojadinovic, « Gamma-Radiation Effects in CMOS Transistors, Solid State Device Research Conference, pp.725-728, 1987. ,
Standby and Active Leakage Current Control and Minimization in CMOS VLSI Circuits, IEICE Transactions on Electronics, vol.88, issue.4, pp.509-519, 2005. ,
DOI : 10.1093/ietele/e88-c.4.509
Radiation-induced off-state leakage current in commercial power MOSFETs, Radiation-induced off-state leakage current in commercial power MOSFETs, pp.2378-2386, 2005. ,
DOI : 10.1109/TNS.2005.860724
Total-Dose Radiation and Annealing Studies: Implications for Hardness Assurance Testing, Total-Dose Radiation and Annealing Studies: Implications for Hardness Assurance Testing, pp.1343-1351, 1986. ,
DOI : 10.1109/TNS.1986.4334603
Comparison of Proton and Neutron Carrier Removal Rates, Comparison of Proton and Neutron Carrier Removal Rates, pp.1140-1146, 1987. ,
DOI : 10.1109/TNS.1987.4337443
Displacement Damage Effects in Irradiated Semiconductor Devices, Displacement Damage Effects in Irradiated Semiconductor Devices, pp.1740-1766, 2013. ,
DOI : 10.1109/TNS.2013.2261316
Sorge, « TID and displacement damage effects in vertical and lateral power MOSFETs for integrated DC-DC converters, 2009 European Conference on Radiation and Its Effects on Components and Systems (RADECS), pp.46-53, 2009. ,
Study of N-channel MOSFETs with an enclosed-gate layout in a 0.18 /spl mu/m CMOS technology, IEEE Transactions on Nuclear Science, vol.52, issue.4, pp.861-867, 2005. ,
DOI : 10.1109/TNS.2005.852652
Radiation tolerant VLSI circuits in standard deep submicron CMOS technologies for the LHC experiments: practical design aspects, IEEE Transactions on Nuclear Science, vol.46, issue.6, pp.1690-1696, 1999. ,
DOI : 10.1109/23.819140
Enclosed Layout Transistor with Active Region Cutout, 2008 IEEE Region 5 Conference, pp.1-5, 2008. ,
DOI : 10.1109/TPSD.2008.4562742
« Performance analysis of highspeed MOS transistors with different layout styles, IEEE International Symposium on Circuits and Systems, pp.3688-3691, 2005. ,
Sung, « Dual-channel SOI LIGBT with improved latch-up and forward voltage drop characteristics, Device Research Conference, pp.53-54, 2001. ,
Clock Feedthrough in CMOS Analog Transmission Gate Switches, ASIC/SOC Conference 15th Annual IEEE International, pp.181-185, 2002. ,
DOI : 10.1007/s10470-005-3014-y
« Radiation Tolerant Low Power 12-bit ADC in 130 nm CMOS Technology », présenté à TWEPP 2011 Topical Workshop on Electronics for Particle Physics, 2011. ,
Reduced-Precision Redundancy for Reliable FPGA Communications Systems in High-Radiation Environments, IEEE Transactions on Aerospace and Electronic Systems, vol.49, issue.1, pp.369-380, 2013. ,
DOI : 10.1109/TAES.2013.6404109
Supply and threshold voltage scaling for low power CMOS, IEEE Journal of Solid-State Circuits, vol.32, issue.8, pp.1210-1216, 1997. ,
DOI : 10.1109/4.604077
« A new semiconductor voltage standard », in Solid-State Circuits Conference. Digest of Technical Papers, IEEE International, vol.VII, pp.32-33, 1964. ,
New developments in IC voltage regulators, IEEE Journal of Solid-State Circuits, vol.6, issue.1, pp.2-7, 1971. ,
DOI : 10.1109/JSSC.1971.1050151
A precision reference voltage source, IEEE Journal of Solid-State Circuits, vol.8, issue.3, pp.222-226, 1973. ,
DOI : 10.1109/JSSC.1973.1050378
A simple three-terminal IC bandgap reference, IEEE Journal of Solid-State Circuits, vol.9, issue.6, pp.388-393, 1974. ,
DOI : 10.1109/JSSC.1974.1050532
An integrated bandgap reference, IEEE Journal of Solid-State Circuits, vol.11, issue.3, pp.403-406, 1976. ,
DOI : 10.1109/JSSC.1976.1050744
« Low voltage techniques », in Solid-State Circuits Conference. Digest of Technical Papers, IEEE International, vol.XXI, pp.238-239, 1978. ,
Designing Analog Chips, Virtualbookworm.com Publishing, 2005. ,
CMOS analog integrated circuits based on weak inversion operations, IEEE Journal of Solid-State Circuits, vol.12, issue.3, pp.224-231, 1977. ,
DOI : 10.1109/JSSC.1977.1050882
A low-voltage CMOS bandgap reference, IEEE Journal of Solid-State Circuits, vol.14, issue.3, pp.573-579, 1979. ,
DOI : 10.1109/JSSC.1979.1051218
A CMOS bandgap voltage reference, IEEE Journal of Solid-State Circuits, vol.14, issue.3, pp.655-657, 1979. ,
DOI : 10.1109/JSSC.1979.1051234
« A 1 V, 26 mu;W extended temperature range band-gap reference in 130-nm CMOS technology, Solid-State Circuits Conference, 2005. ESSCIRC 2005. Proceedings of the 31st European, pp.503-506 ,
A 1.4 V Supply CMOS Fractional Bandgap Reference, IEEE Journal of Solid-State Circuits, vol.42, issue.10, pp.2180-2186, 2007. ,
DOI : 10.1109/JSSC.2007.905236
URL : https://hal.archives-ouvertes.fr/insu-00359676
A CMOS bandgap reference circuit with sub-1-V operation, IEEE Journal of Solid-State Circuits, vol.34, issue.5, pp.670-674, 1999. ,
DOI : 10.1109/4.760378
Low voltage techniques [for micropower operational amplifiers], Low voltage techniques, pp.838-846, 1978. ,
DOI : 10.1109/JSSC.1978.1052058
« A second-order temperature compensated bandgap reference for analog -to -digital converter, 2010 International Conference on Computer Design and Applications (ICCDA), pp.1-354, 2010. ,
Dash, « Design of second-order sub-bandgap mixedmode voltage reference circuit for low voltage applications, 18th International Conference on VLSI Design, pp.307-312, 2005. ,
Second-order compensated bandgap reference with convex correction, Electronics Letters, vol.41, issue.5, pp.276-277, 2005. ,
DOI : 10.1049/el:20057071
Ping, « A New CMOS Current Reference with High Order Temperature Compensation, 2006 International Conference on Communications, Circuits and Systems Proceedings, pp.2189-2192, 2006. ,
CMOS current reference without resistance, IEEE Journal of Solid-State Circuits, vol.32, issue.7, pp.1132-1135, 1997. ,
DOI : 10.1109/4.597305
Contribution to the Built-In Self-Test for RF VCOs, 2010. ,
URL : https://hal.archives-ouvertes.fr/hal-00539163
Mutual compensation of mobility and threshold voltage temperature effects with applications in CMOS circuits, IEEE Transactions on Circuits and Systems I: Fundamental Theory and Applications, vol.48, issue.7, pp.876-884, 2001. ,
DOI : 10.1109/81.933328
Degradation of precision reference devices in space environments, IEEE Transactions on Nuclear Science, vol.44, issue.6, 1997. ,
DOI : 10.1109/23.658965
A Radiation Hard Bandgap Reference Circuit in a Standard 0.13 <formula> <tex>$\mu$</tex></formula>m CMOS Technology, IEEE Transactions on Nuclear Science, vol.54, issue.6, pp.2727-2733, 2007. ,
DOI : 10.1109/TNS.2007.910170
Design of a Bandgap Reference Circuit with Trimming for Operation at Multiple Voltages and Tolerant to Radiation in 90nm CMOS Technology, 2010 IEEE Computer Society Annual Symposium on VLSI, pp.269-272, 2010. ,
DOI : 10.1109/ISVLSI.2010.64
Analysis of bipolar linear circuit response mechanisms for high and low dose rate total dose irradiations, IEEE Transactions on Nuclear Science, vol.43, issue.6, pp.3040-3048, 1996. ,
DOI : 10.1109/23.556903
Design and optimization of multithreshold cmos (mtcmos) circuits, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, vol.22, issue.10, pp.1324-1342 ,
DOI : 10.1109/TCAD.2003.818127
Effects of Substrate Doping on the Linearly Extrapolated Threshold Voltage of Symmetrical DG MOS Devices, IEEE Transactions on Electron Devices, vol.52, issue.7, pp.1616-1621, 2005. ,
DOI : 10.1109/TED.2005.850622
0.7 V supply highly linear subthreshold low-noise amplifier design for 2.4 GHz wireless sensor network applications, Microwave and Optical Technology Letters, vol.50, issue.5, pp.1316-1320, 2009. ,
DOI : 10.1002/mop.24333
Flat-band voltage dependence on channel length in short-channel threshold model, IEEE Transactions on Electron Devices, vol.32, issue.5, pp.1001-1002 ,
DOI : 10.1109/T-ED.1985.22062
Threshold-voltage variations in VLSI MOSFETs due to short channel lengths, IEEE Journal of Solid-State Circuits, vol.22, issue.5, pp.905-908 ,
DOI : 10.1109/JSSC.1987.1052833
« Design of a Low-Power Bandgap Current Reference, 2010 International Conference on E-Product E-Service and E-Entertainment (ICEEE), pp.1-3 ,
Optimal Two-Dimension Common Centroid Layout Generation for MOS Transistors Unit-Circuit, 2005 IEEE International Symposium on Circuits and Systems, pp.2999-3002, 2005. ,
DOI : 10.1109/ISCAS.2005.1465258
468 #x00B5;W low-power bandgap voltage reference, 2010 3rd IEEE International Conference on Computer Science and Information Technology (ICCSIT), pp.256-258, 2010. ,
Dundar, « MOS only simulated grounded negative resistors, 34th International Conference on Telecommunications and Signal Processing (TSP), pp.328-331, 2011. ,
Amemiya, « A 0.3 #x03BC;W, 7 ppm/ #x00B0;C CMOS Voltage reference circuit for on-chip process monitoring in analog circuits, Solid-State Circuits Conference, pp.398-401, 2008. ,
Voltage reference design using 1 V power supply in 0.13 µm CMOS technology, 2013 IEEE 4th Latin American Symposium on Circuits and Systems (LASCAS), pp.1-4, 2013. ,
DOI : 10.1109/LASCAS.2013.6518993
Application of test method 1019.4 to nonhardened power MOSFETs, Application of test method 1019.4 to nonhardened power MOSFETs, pp.555-560, 1994. ,
DOI : 10.1109/23.299798
Comparative analysis of low dose-rate, accelerated, and standard cobalt-60 radiation response data for a low-dropout voltage regulator and a voltage reference, IEEE Radiation Effects Data Workshop, pp.177-180, 2002. ,
DOI : 10.1109/REDW.2002.1045550
Total dose performance of radiation hardened voltage regulators and references, 2001 IEEE Radiation Effects Data Workshop. NSREC 2001. Workshop Record. Held in conjunction with IEEE Nuclear and Space Radiation Effects Conference (Cat. No.01TH8588), pp.1-5, 2001. ,
DOI : 10.1109/REDW.2001.960440
Enz, « Design methodology for ultra low-power analog circuits using next generation BSIM6 MOSFET compact model », Microelectron, J, vol.44, issue.7, pp.570-575 ,
What are these border traps: introduced by radiation and seen by charge pumping technique?, 2001 IEEE Nuclear Science Symposium Conference Record (Cat. No.01CH37310), pp.234-239, 2001. ,
DOI : 10.1109/NSSMIC.2001.1008449
Djezzar, « Fast and simple method for estimation and separation of radiation-induced traps in MOSFETs devices, 2011 IEEE International Conference on Quality and Reliability (ICQR), pp.469-472, 2011. ,
Temes, « Circuit techniques for reducing the effects of op-amp imperfections: autozeroing, correlated double sampling, and chopper stabilization, Proc. IEEE, pp.1584-1614, 1996. ,
On the relationship between topography and transistor matching in an analog CMOS technology, IEEE Transactions on Electron Devices, vol.39, issue.2, pp.275-282, 1992. ,
DOI : 10.1109/16.121683
Influence of die attachment on MOS transistor matching, Influence of die attachment on MOS transistor matching, pp.209-218, 1997. ,
DOI : 10.1109/66.572070
Design of analog CMOS integrated circuits, 2001. ,
A Single-Temperature Trimming Technique for MOS-Input Operational Amplifiers Achieving 0.33 <formula formulatype="inline"> <tex Notation="TeX">$\mu$</tex></formula>V/<formula formulatype="inline"> <tex Notation="TeX">$^{\circ}$</tex></formula>C Offset Drift, IEEE Journal of Solid-State Circuits, vol.46, issue.9, pp.2099-2107, 2011. ,
DOI : 10.1109/JSSC.2011.2139530
1/f noise and radiation effects in MOS devices, MOS devices, pp.1953-1964, 1994. ,
DOI : 10.1109/16.333811
A low noise, low residual offset, chopped amplifier for mixed level applications, 1998 IEEE International Conference on Electronics, Circuits and Systems. Surfing the Waves of Science and Technology (Cat. No.98EX196), pp.333-336, 1998. ,
DOI : 10.1109/ICECS.1998.814893
A low drift fully integrated MOSFET operational amplifier, IEEE Journal of Solid-State Circuits, vol.13, issue.4, pp.499-503, 1978. ,
DOI : 10.1109/JSSC.1978.1051084
« A Low Offset High Voltage Swing Rail-to-Rail Buffer Amplifier with for LCD Driver, IEEE Conference on Electron Devices and Solid-State Circuits, pp.1025-1030, 2007. ,
Makinwa, « Dynamic Offset Cancellation Techniques for Operational Amplifiers, Precision Instrumentation Amplifiers and Read-Out Integrated Circuits, pp.21-49, 2013. ,
Precision instrumentation amplifiers and read-out integrated circuits, 2013. ,
DOI : 10.1007/978-1-4614-3731-4
A 140 dB-CMRR Current-Feedback Instrumentation Amplifier Employing Ping-Pong Auto-Zeroing and Chopping, IEEE Journal of Solid-State Circuits, vol.45, issue.10, pp.2044-2056, 2010. ,
DOI : 10.1109/JSSC.2010.2060253
On charge injection in analog MOS switches and dummy switch compensation techniques, IEEE Transactions on Circuits and Systems, vol.37, issue.2, pp.256-264, 1990. ,
DOI : 10.1109/31.45719
A low-voltage CMOS switch with a novel clock boosting scheme, IEEE Transactions on Circuits and Systems II: Express Briefs, vol.52, issue.4, pp.185-188, 2005. ,
DOI : 10.1109/TCSII.2004.842037
Fully differential switched-current memory cell with low charge-injection errors, Circuits Devices Syst. IEE Proc, pp.157-164, 2001. ,
DOI : 10.1049/ip-cds:20010128
The Recycling Folded Cascode: A General Enhancement of the Folded Cascode Amplifier, IEEE Journal of Solid-State Circuits, vol.44, issue.9, pp.2535-2542, 2009. ,
DOI : 10.1109/JSSC.2009.2024819
A self-biased high performance folded cascode CMOS op-amp, Proceedings Tenth International Conference on VLSI Design, pp.429-434, 1997. ,
DOI : 10.1109/ICVD.1997.568171
A 1.8 V self-biased complementary folded cascode amplifier, AP-ASIC'99. First IEEE Asia Pacific Conference on ASICs (Cat. No.99EX360), pp.63-65, 1999. ,
DOI : 10.1109/APASIC.1999.824030
URL : https://hal.archives-ouvertes.fr/in2p3-00004486
A Compact Low-Power High Slew-Rate Rail-to-Rail Class-AB Buffer Amplifier for LCD Driver ICs, 2007 IEEE Conference on Electron Devices and Solid-State Circuits, pp.397-400, 2007. ,
DOI : 10.1109/EDSSC.2007.4450146
Huijsing, « A compact powerefficient 3 V CMOS rail-to-rail input/output operational amplifier for VLSI cell libraries », IEEE J. Solid-State Circuits, vol.29, pp.12-1505, 1994. ,