Durcissement par conception d'ASIC analogiques

Abstract : The purpose of this thesis work is to investigate circuit design techniques to improve the robustness to Total Ionizing Dose (TID) of analog circuits within electronic systems embedded in space probes, satellites and vehicles. Such circuits often contain bipolartransistor components which are quite sensitive to cumulated radiation dose. However highly integrated CMOS technology has been shown to exhibit better natural TDI hardening.The approach proposed here is a hardening by design using a full CMOS semiconductor technology commercially available from ST Microelectronics calledHCMOS9A. The proposed generic hardening design methods will be seen to be compatibleand applicable to other existing or future process technologies. Furthermore this approach addresses the issue of ever-increasing development cost and access to hardened technologies.The first TID hardening technique proposed is applied to a full-CMOS voltage reference. This technique does not involve p-n junctions nor any particular layout precaution but instead is based on the subtraction of two different threshold voltages which allows the cancellation of TDI effects. While the use of advanced commercial CMOS technologies for specific radiation hardened applications is becoming more common, these technologies suffer from larger inputoffs et voltage drift than their bipolar transistor counterparts, which can impact system performance. The second technique studied is that of auto-zeroing, which is an efficient method to reduce the complex offset voltage drift mechanisms of operational amplifiers due to temperature. The purpose here is to prove that this technique can also cancel input offset voltage drift due to TID.Index term : hardening, cumulated dose, CMOS technology, voltage reference,operational amplifier.
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Yohan Piccin. Durcissement par conception d'ASIC analogiques. Electronique. Université de Bordeaux, 2014. Français. ⟨NNT : 2014BORD0145⟩. ⟨tel-01148495⟩

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