L. Standards-À-60-ghz and .. , 26 1.3.1. Organisation des canaux, p.27

. Etat, .. De-puissance-millimétriques, and P. Les, 49 3.5.2, p.59

C. Lignes-de-transmission, 67 3.1.2. Caractérisation d'une ligne de transmission, p.71

E. De-l-'art and .. , 136 1.1. Techniques de linéarisation et d'amélioration du rendement compatibles aux fréquences millimétriques, p.136

A. Doherty and .. , 137 1.1.3. Polarisation dynamique, PCS), p.141

P. Combinaison-en, 142 1.2.1. Combinaison à base de lignes de transmission, p.145

C. Topologie-du, 147 2.2. Linéarisation par polarisation segmentée, p.151

.. Résultats-de-simulation-et-expérimentaux, 155 2.3.1. Performances petit-signal Performances large-signal en classe A, 155 2.3.3. Performances avec la polarisation segmentée et optimisation de la consommation, p.158

C. La-technologie and F. , 166 3.1.1. Le Back-End Of Line (BEOL), p.167

.. Résultats-de-simulation-et-expérimentaux, 173 3.4.1. Performances petit-signal, p.174

R. Abbasi, T. Kjellberg, A. De-graauw, E. Heijden, R. Roovers et al., A Broadband Differential Cascode Power Amplifier in 45nm CMOS for High-Speed 60GHz System-on-Chip, IEEE RFIC, pp.533-537, 2010.

A. Agah, H. Dabag, B. Hanafi, P. Asbeck, L. Larson et al., A 34% PAE, 18.6dBm 42-45GHz Stacked Power Amplifier in 45nm SOI CMOS, IEEE RFIC, pp.57-60, 2012.

S. Aloui, E. Kerherve, R. Plana, and D. Belot, RF-pad, Transmission Lines and balun optimization for 60GHz 65nm CMOS Power Amplifier, 2010 IEEE Radio Frequency Integrated Circuits Symposium, pp.211-214, 2010.
DOI : 10.1109/RFIC.2010.5477378
URL : https://hal.archives-ouvertes.fr/hal-00481296

E. [. Aloui, R. Kerherve, D. Plana, and . Belot, A 59GHz-to-67GHz 65nm-CMOS high efficiency Power Amplifier, 2011 IEEE 9th International New Circuits and systems conference, pp.225-228, 2011.
DOI : 10.1109/NEWCAS.2011.5981296
URL : https://hal.archives-ouvertes.fr/hal-00619441

Y. [. Aloui, N. Luque, B. Demirel, R. Leite, D. Plana et al., Optimized Power Combining Technique to Design a 20dB Gain, 13.5dBm OCP 1dB 60GHz Power Amplifier Using 65nm CMOS Technology, IEEE RFIC, pp.53-56, 2012.
URL : https://hal.archives-ouvertes.fr/hal-00719185

S. Aloui, B. Leite, N. Demirel, R. Plana, D. Belot et al., Optimization of 65nm CMOS Passive Devices to Design a 16-dBm-Psat 60 GHz Power Amplifier, IEEE LASCAS, pp.1-4, 2013.
URL : https://hal.archives-ouvertes.fr/hal-00842201

I. Aoki, S. Kee, D. Rutledge, and A. Hajimiri, Distributed active transformer-a new power-combining and impedance-transformation technique, IEEE Transactions on Microwave Theory and Techniques, vol.50, issue.1, pp.316-331, 2002.
DOI : 10.1109/22.981284

H. Asada, K. Matsushita, K. Bunsen, K. Okada, and A. Matsuzawa, A 60 GHz CMOS Power Amplifier Using Capacitive Cross-Coupling Neutralization with 16% PAE, IEEE EuMIC, pp.554-557, 2011.

K. Benaissa, J. Yang, D. Crenshaw, B. Williams, S. Sridhar et al., RF CMOS on high-resistivity substrates for system-on-chip applications, IEEE Transactions on Electron Devices, vol.50, issue.3, pp.567-576, 2003.
DOI : 10.1109/TED.2003.810470

R. Bhat, A. Chakrabarti, and H. Krishnaswamy, Large-scale power-combining and linearization in watt-class mmWave CMOS power amplifiers, 2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), pp.283-286, 2013.
DOI : 10.1109/RFIC.2013.6569583

J. R. Black, Electromigration—A brief survey and some recent results, IEEE Transactions on Electron Devices, vol.16, issue.4, p.338, 1969.
DOI : 10.1109/T-ED.1969.16754

M. Boers, A 60GHz transformer coupled amplifier in 65nm digital CMOS, 2010 IEEE Radio Frequency Integrated Circuits Symposium, pp.343-346, 2010.
DOI : 10.1109/RFIC.2010.5477356

M. Bohsali and A. M. Niknejad, Current combining 60GHz CMOS power amplifiers, 2009 IEEE Radio Frequency Integrated Circuits Symposium, pp.31-34, 2009.
DOI : 10.1109/RFIC.2009.5135483

S. M. Bowers, K. Sengupta, B. D. Parker, and A. Hajimiri, Integrated Self-Healing for mm-Wave Power Amplifiers, IEEE Transactions on Microwave Theory and Techniques, vol.61, issue.3, pp.1301-1315, 2013.
DOI : 10.1109/TMTT.2013.2243750

F. Brecht and P. Reynaert, A Transformer-Coupled True-RMS Power Detector in 40nm CMOS, IEEE ISSCC, pp.62-63, 2014.

F. Burdin, Nouvelles topologies de diviseurs de puissance, baluns et déphaseurs en bandes RF et millimétriques, apport des lignes à ondes lentes, 2013.

N. Ceylan, Linearization of power amplifiers by means of digital predistortion, 2005.

W. L. Chan, J. R. Long, M. Spirito, and J. J. Pekarik, A 60GHz-Band 1V 11.5dBm Power Amplifier with 11% PAE in 65nm CMOS, 2009 IEEE International Solid-State Circuits Conference, Digest of Technical Papers, pp.380-381, 2009.
DOI : 10.1109/ISSCC.2009.4977467/mm1

E. Dickson, S. T. Laskin, T. Nicolson, K. H. Chalvatzis, and . Yau, Advanced SiGe BiCMOS and CMOS platforms for Optical and Millimeter-Wave Integrated Circuits, IEEE CSIC, pp.12-15, 2006.

J. Chen and A. M. Niknejad, A Compact 1V 18.6 dBm 60 GHz Power Amplifier in 65 nm CMOS, IEEE ISSCC, pp.432-433, 2011.

L. Chen, L. Li, and T. J. Cui, A 1V 18dBm 60GHz Power Amplifier with 24dB Gain in 65nm LP CMOS, IEEE APMC, pp.13-15, 2012.

J. Chen, L. Ye, D. Titz, F. Gianesello, R. Pilard et al., A Digitally Modulated mm-Wave Cartesian Beamforming Transmitter with Quadrature Spatial Combining, IEEE ISSCC, pp.232-233, 2013.
URL : https://hal.archives-ouvertes.fr/hal-00918898

J. Chen, Advanced Architectures for Efficient mm-Wave CMOS Wireless Transmitters, 2014.

I. Chen, S. E. Holland, and C. Hu, Electrical breakdown in thin gate and tunneling oxides, IEEE Transactions on Electron Devices, vol.32, issue.2, pp.413-422, 1985.
DOI : 10.1109/T-ED.1985.21957

H. Chireix, High Power Outphasing Modulation, Proceedings of the IRE, vol.23, issue.11, pp.1370-1392, 1935.
DOI : 10.1109/JRPROC.1935.227299

D. Chowdhury, P. Reynaert, and A. M. Niknejad, Design Considerations for 60 GHz Transformer-Coupled CMOS Power Amplifiers, IEEE Journal of Solid-State Circuits, vol.44, issue.10, pp.2733-2744, 2009.
DOI : 10.1109/JSSC.2009.2028752

D. Chowdhury, Efficient Transmitters for Wireless Communications in Nanoscale CMOS Technology, 2010.

E. Cohen, S. Ravid, and D. Ritter, 60GHz 45nm PA for Linear OFDM Signal with Predistortion Correction achieving 6.1% PAE and -28dB EVM, IEEE RFIC, pp.35-38, 2009.

E. Cohen, O. Degani, S. Ravid, and D. Ritter, Robust 60 GHz 90nm and 40nm CMOS wideband neutralized amplifiers with 23dB gain 4.6dB NF and 24% PAE, 2012 IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, pp.207-210, 2012.
DOI : 10.1109/SiRF.2012.6160151

J. P. Collinge, Reduction of kink effect in thin-film SOI MOSFETs, IEEE Electron Device Letters, vol.9, issue.2, pp.97-99, 1988.
DOI : 10.1109/55.2052

S. C. Cripps, RF power amplifiers for wireless communications, IEEE Microwave Magazine, vol.1, issue.1, 2006.
DOI : 10.1109/MMW.2000.823830

M. Dehan, Characterization and Modeling of SOI RF Integrated components Catholic University of Louvain Thesis, 2003.

N. Demirel, E. Kerhervé, R. Plana, D. Pache, and D. Belot, 59-71GHz Wideband MMIC Balanced Power Amplifier in a 0.13um SiGe Technology, IEEE EuMC, pp.1852-1855, 2009.
URL : https://hal.archives-ouvertes.fr/hal-00481780

W. Doherty, A New High Efficiency Power Amplifier for Modulated Waves, Proceedings of the IRE, vol.24, issue.9, pp.1163-1182, 1936.
DOI : 10.1109/JRPROC.1936.228468

M. L. Edwards and J. H. Sinsky, A new criterion for linear 2-port stability using a single geometrically derived parameter, IEEE Transactions on Microwave Theory and Techniques, vol.40, issue.12, pp.2303-2311, 1992.
DOI : 10.1109/22.179894

S. Emami, R. Wiser, E. Ali, M. Forbes, M. Gordon et al., A 60GHz CMOS phased-array transceiver pair for multi-Gb/s wireless communications, 2011 IEEE International Solid-State Circuits Conference, 2011.
DOI : 10.1109/ISSCC.2011.5746265

J. Essing, R. Mahmoudi, Y. Pei, and A. V. Roermund, A fully integrated 60GHz distributed transformer power amplifier in bulky CMOS 45nm, 2011 IEEE Radio Frequency Integrated Circuits Symposium, pp.1-4, 2011.
DOI : 10.1109/RFIC.2011.5940684

C. Fager, J. C. Pedro, N. Borges-de-carvalho, H. Zirath, F. Fortes et al., A Comprehensive Analysis of IMD Behavior in RF CMOS Power Amplifiers, IEEE Journal of Solid-State Circuits, vol.39, issue.1, pp.24-34, 2004.
DOI : 10.1109/JSSC.2003.820860

P. M. Farahabadi and K. Moez, A Dual-Mode Highly Efficient 60GHz Power Amplifier in 65nm CMOS, IEEE RFIC, pp.155-158, 2014.

J. Gorisse, A. Cathelin, A. Kaiser, E. J. Kerhervégu12-]-q, Z. Gu et al., A 60GHz CMOS RMS power detector for antenna impedance mismatch detection Two-Way Current-Combining W-Band Power Amplifier in 65-nm CMOS, TAISA Conference Proc. ESSCIRC, pp.93-961365, 2008.

E. Hammerstad and O. Jensen, Accurate Models for Microstrip Computer-Aided Design, MTT-S International Microwave Symposium Digest, pp.407-409, 1980.
DOI : 10.1109/MWSYM.1980.1124303

Y. Hsiao, Z. Tsai, H. Liao, J. Kao, and H. Wang, Millimeter-Wave CMOS Power Amplifiers With High Output Power and Wideband Performances, Part 15.3 Wireless medium access control (MAC) and physical layer (PHY) specifications for high rate wireless personal area networks (WPANs), Amendment 2: Millimeter-wave based alternative physical layer extension, pp.4520-4533, 2009.
DOI : 10.1109/TMTT.2013.2288223

T. [. Imai, T. Nojima, and . Murase, Novel linearizer using balanced circulators and its application to multilevel digital radio systems, IEEE Transactions on Microwave Theory and Techniques, vol.37, issue.8
DOI : 10.1109/22.31085

A. Itu-radiocommunication, Recommendation ITU-R P.676-5 ? Attenuation by atmospheric gases, 2001.

J. [. Jen, T. W. Tsai, H. Huang, and . Wang, Design and Analysis of a 55- 71-GHz Compact and Broadband Distributed Active Transformer Power Amplifier in 90-nm CMOS Process A Wideband Millimeter-Wave Power Amplifier With 20 dB Linear Power Gain and +8 dBm Maximum Saturated Output Power, IEEE Trans. Microw. Theory Tech. IEEE Journal of Solid-State Circuits, vol.5743, issue.77, pp.1637-16461553, 2008.

E. Kaymaksut and P. Reynaert, Transformer-Based Uneven Doherty Power Amplifier in 90 nm CMOS for WLAN Applications, IEEE Journal of Solid-State Circuits, vol.47, issue.7, pp.1659-1671, 2012.
DOI : 10.1109/JSSC.2012.2191334

E. Kaymaksut, D. Zhao, and P. Reynaert, E-band Transformer-based Doherty Power Amplifier in 40nm CMOS, IEEE RFIC, pp.167-170, 2014.

S. Kee, The class e/f family of harmonic-tuned switching power amplifiers, 2002.

T. W. Kim, B. Kim, I. Nam, B. Ko, and K. Lee, A Low-Power Highly Linear Cascoded Multiple-Gated Transistor CMOS RF Amplifier with 10dB IP3 Improvement, IEEE Microwave. And Wireless Components Letters, vol.13, issue.6, pp.205-207, 2003.

T. Kjellberg, M. Abbasi, M. Ferndahl, A. De-graauw, E. Heijden et al., A Compact Cascode Power Amplifier in 45-nm CMOS for 60-GHz Wireless Systems, 2009 Annual IEEE Compound Semiconductor Integrated Circuit Symposium, pp.1-4, 2009.
DOI : 10.1109/csics.2009.5315699

A. Komijani, A. Natarajan, and A. Hajimiri, A 24-GHz, +14.5-dBm fully integrated power amplifier in 0.18-/spl mu/m CMOS, IEEE Journal of Solid-State Circuits, vol.40, issue.9, pp.1901-1908, 2005.
DOI : 10.1109/JSSC.2005.848143

D. Kraszewski, V. Subramanian, W. Keusgen, and G. Boeck, Prediction of the Dielectric Properties of Two-Phase Mixtures, Journal of Microwave Power, vol.12, issue.3, pp.57-59, 1977.
DOI : 10.1080/16070658.1977.11689049

S. Kulkarni and P. Reynaert, A Push-Pull mm-Wave Power Amplifier with <0.8° AM-PM Distortion in 40nm CMOS, IEEE ISSCC, pp.252-253, 2014.

J. L. Kuo, Z. M. Tsai, K. Y. Lin, and H. Wang, A 50 to 70 GHz Power Amplifier Using 90nm CMOS Technology, IEEE Microwave. And Wireless Components Letters, vol.19, issue.1, pp.45-47, 2009.

J. Lai and A. Valdes-garcia, A 1V 17, IEEE ISSCC, pp.424-425, 2010.

T. Larocca, J. Y. Liu, and M. F. Chang, 60 GHz CMOS Amplifiers Using Transformer-Coupling and Artificial Dielectric Differential Transmission Lines for Compact Design, IEEE Journal of Solid-State Circuits, vol.44, issue.5, pp.1425-1435, 2009.
DOI : 10.1109/JSSC.2009.2015794

T. Larocca, Y. Wu, K. Thai, R. Snyder, N. Daftari et al., A 64QAM 94GHz CMOS transmitter SoC with digitally-assisted power amplifiers and thru-silicon waveguide power combiners, 2014 IEEE Radio Frequency Integrated Circuits Symposium, pp.295-298, 2014.
DOI : 10.1109/RFIC.2014.6851724

C. Y. Law and A. Pham, A High-Gain 60 GHz Power Amplifier with 20dBm Output Power in 90 nm CMOS Design and modeling of mm-wave integrated transformers in CMOS and BiCMOS technologies, IEEE ISSCC, pp.426-427, 2010.

Q. S. Lim, A. V. Kordesch, and R. A. Keating, Performance comparison of MIM capacitors and metal finger capacitors for analog and RF applications, 2004 RF and Microwave Conference (IEEE Cat. No.04EX924)
DOI : 10.1109/RFM.2004.1411082

J. Y. Liu, Q. J. Gu, T. Larocca, N. Wang, Y. Wu et al., A 60 GHz High Gain Transformer-Coupled Differential Power Amplifier in 65nm CMOS, IEEE APMC, pp.932-935, 2010.

J. Y. Liu, R. Berenguer, and M. F. Chang, Millimeter-Wave Self-Healing Power Amplifier With Adaptive Amplitude and Phase Linearization in 65-nm CMOS, IEEE Transactions on Microwave Theory and Techniques, vol.60, issue.5, pp.1342-1352, 2012.
DOI : 10.1109/TMTT.2012.2189119

B. Martineau, A. Cathelin, F. Danneville, A. Kaiser, G. Dambrine et al., 80 GHz low noise amplifiers in 65nm CMOS SOI, ESSCIRC 2007, 33rd European Solid-State Circuits Conference, pp.348-351, 2007.
DOI : 10.1109/ESSCIRC.2007.4430315
URL : https://hal.archives-ouvertes.fr/hal-00284027

M. Martineau, Potentialité de la technologie CMOS 65nm SOI pour des applications sans fils en bande millimétrique, 2008.

B. Martineau, V. Knopik, A. Siligaris, F. Gianesello, and D. Belot, A 53-to-68GHz 18dBm power amplifier with an 8-way combiner in standard 65nm CMOS, 2010 IEEE International Solid-State Circuits Conference, (ISSCC), pp.428-429, 2010.
DOI : 10.1109/ISSCC.2010.5433879

J. W. Mcpherson and H. C. , Underlying physics of the thermochemical E model in describing low-field time-dependent dielectric breakdown in SiO2 thin films, Journal of Applied Physics, vol.84, issue.3, pp.1513-1523, 1998.
DOI : 10.1063/1.368217

F. Monsieur, E. Vincent, D. Roy, S. Bruyere, J. C. Vildeuil et al., A thorough investigation of progressive breakdown in ultra-thin oxides. Physical understanding and application for industrial reliability assessment, 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320), pp.45-54, 2002.
DOI : 10.1109/RELPHY.2002.996609

E. Morifuji, H. S. Momose, T. Ohguro, T. Yoshitomi, H. Kimijima et al., Future perspective and scaling down roadmap for RF CMOS, IEEE VLSI Circuits, pp.165-166, 1999.

A. M. Niknejad, Analysis, Simulation, and Applications of Passive Devices on Conductive Substrates, 2000.

O. T. Ogunnika and A. Valdes-garcia, A 60GHz Class-E tuned power amplifier with PAE &#x003E;25% in 32nm SOI CMOS, 2012 IEEE Radio Frequency Integrated Circuits Symposium, pp.65-68, 2012.
DOI : 10.1109/RFIC.2012.6242233

H. Takeuchi, M. Yamagishi, A. Noda, and . Matsuzawa, A 60-GHz 16QAM, IEEE Journal of Solid-State Circuits, vol.46, issue.12, pp.2988-3004, 2011.

K. Okada, R. Minami, Y. Tsukui, S. Kawai, Y. Seo et al., 20.3 A 64-QAM 60GHz CMOS transceiver with 4-channel bonding, 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC), pp.346-347, 2014.
DOI : 10.1109/ISSCC.2014.6757463
URL : https://hal.archives-ouvertes.fr/hal-00174723

A. D. Olver, Millimetre-wave systems-past, present and future, IEE Proceedings F Radar and Signal Processing, pp.35-52, 1989.

C. Pavageau, Utilisation des technologies CMOS SOI 130nm pour des applications en gamme de fréquences millimétriques, 2005.

U. R. Pfeiffer and D. Goren, A 23-dBm 60-GHz Distributed Active Transformer in a Silicon Process Technology, IEEE Transactions on Microwave Theory and Techniques, vol.55, issue.5, pp.857-865, 2007.
DOI : 10.1109/TMTT.2007.895654

A. Platzer, W. Struble, and K. Hetzler, Instabilities diagnosis and the role of K in microwave circuits, IEEE MTT-S Digest, pp.1185-1188, 1993.

T. Quémerais, L. Moquillon, V. Huard, J. M. Fournier, P. Benech et al., DC Hot Carrier Stress Effect on CMOS 65nm 60GHz Power Amplifiers, IEEE RFIC, pp.351-354, 2010.

T. Quémerais, Conception et Etude de la Fiabilité des Amplificateurs de Puissance Fonctionnant aux Fréquences Millimétriques en Technologies CMOS Avancées, 2010.

T. Quémerais, L. Moquillon, J. M. Fournier, P. Benech, and V. Huard, Design-in-Reliable Millimeter-Wave Power Amplifiers in a 65-nm CMOS Process, IEEE Transactions on Microwave Theory and Techniques, vol.60, issue.4, pp.1079-1085, 2012.
DOI : 10.1109/TMTT.2012.2184133

S. [. Raczkowski, W. Thijs, B. De-raedt, P. Nauwelaers, and . Wambacq, 50-to-67GHz ESD-Protected Power Amplifiers in Digital 45nm LP CMOS, 2009 IEEE International Solid-State Circuits Conference, Digest of Technical Papers, pp.382-383, 2009.
DOI : 10.1109/ISSCC.2009.4977468/mm1

B. Razavi, A study of injection locking and pulling in oscillators, IEEE Journal of Solid-State Circuits, vol.39, issue.9, pp.1415-1424, 2004.
DOI : 10.1109/JSSC.2004.831608

J. M. Rollet, Stability and Power-Gain Invariants of Linear Twoports, IRE Transactions on Circuit Theory, vol.9, issue.1, pp.29-32, 1962.
DOI : 10.1109/TCT.1962.1086854

N. Saito, T. Tsukizawa, N. Shirakata, T. Morita, K. Tanaka et al., A Fully Integrated 60-GHz CMOS Transceiver Chipset Based on WiGig/IEEE 802.11ad With Built-In Self Calibration for Mobile Usage, IEEE Journal of Solid-State Circuits, vol.48, issue.12, pp.1-14, 2013.
DOI : 10.1109/JSSC.2013.2279573

S. Saigusa, T. Mitomo, H. Okuni, M. Hosoya, A. Sai et al., 20.4 A fully integrated single-chip 60GHz CMOS transceiver with scalable power consumption for proximity wireless communication, 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC), pp.348-349, 2014.
DOI : 10.1109/ISSCC.2014.6757464

C. E. Shannon, A Mathematical Theory of Communication, Bell System Technical Journal, vol.27, issue.3, pp.379-423, 1948.
DOI : 10.1002/j.1538-7305.1948.tb01338.x

F. Shirinfar, M. Nariman, T. Sowlati, M. Rofougaran, R. Rofougaran et al., A fully integrated 22.6dBm mm-Wave PA in 40nm CMOS, 2013 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), pp.279-282, 2013.
DOI : 10.1109/RFIC.2013.6569582

S. Shopov, R. E. Amaya, J. W. Rogers, and C. Plett, Adapting the Doherty Amplifier for Millimetre-Wave CMOS Applications Modélisation grand signal de MOSFET en hyperfréquences : Application à l'étude des non linéarités des filières SOI, IEEE NEWCAS, pp.229-232, 2004.

M. Rolland, P. Fukaishi, ]. A. Vincentsil11, O. Siligaris, B. Richard et al., A 60GHz Power Amplifier With 14.5dBm Saturation Power and 25% Peak PAE in CMOS 65nm SOI A 65-nm CMOS Fully Integrated Transceiver Module for 60-GHz Wireless HD Applications, IEEE Journal of Solid-State Circuits IEEE Journal of Solid-State Circuits, vol.4546, issue.712, pp.1286-12943005, 2010.
URL : https://hal.archives-ouvertes.fr/hal-00474169

P. Smulders, Exploiting the 60 GHz band for local wireless multimedia access: prospects and future directions, IEEE Communications Magazine, vol.40, issue.1, pp.140-147, 2002.
DOI : 10.1109/35.978061

A. [. Sokal and . Sokal, Class E-A new class of high-efficiency tuned single-ended switching power amplifiers, IEEE Journal of Solid-State Circuits, vol.10, issue.3, pp.168-176, 1975.
DOI : 10.1109/JSSC.1975.1050582

J. Stathis, Percolation models for gate oxide breakdown, Journal of Applied Physics, vol.86, issue.10, pp.5757-5766, 1999.
DOI : 10.1063/1.371590

[. Tang, E. Pistono, P. Ferrari, and J. Fournier, Enhanced performance of a 60-GHz power amplifier by using slow-wave transmission lines in 40??nm CMOS technology, International Journal of Microwave and Wireless Technologies, vol.4, issue.01, pp.93-100, 2012.
DOI : 10.1109/LMWC.2009.2027053

X. Tang, Apport des lignes à ondes lentes S-CPW aux performances d'un front-end millimétrique en technologie CMOS avancée, 2012.

A. [. Thyagarajan, C. D. Niknejad, and . Hull, A 60 GHz Linear Wideband Power Amplifier using Cascode Neutralization in 28nm CMOS, IEEE CICC, pp.1-4, 2013.

J. Tsai, H. Chang, P. Wu, Y. Lee, T. Huang et al., Design and analysis of a 44-GHz MMIC low-loss built-in linearizer for high-linearity medium power amplifiers, IEEE Transactions on Microwave Theory and Techniques, vol.54, issue.6, pp.2487-2496, 2012.
DOI : 10.1109/TMTT.2006.875800

J. Tsai, H. Yang, and T. Huang, A 60 GHz CMOS Power Amplifier With Built-in Pre-Distortion Linearizer, IEEE Microwave and Wireless Components Letters, vol.21, issue.12, pp.676-678, 2011.
DOI : 10.1109/LMWC.2011.2171929

M. Varonen, M. Kärkkäinen, M. Kantanen, and K. A. Halonen, Millimeter-Wave Integrated Circuits in 65-nm CMOS, IEEE Journal of Solid-State Circuits, vol.43, issue.9, pp.1991-2002, 2008.
DOI : 10.1109/JSSC.2008.2001902

S. Veeraraghavan and J. G. Fossum, Short-channel effects in SOI MOSFETs, IEEE Transactions on Electron Devices, vol.36, issue.3, pp.522-528, 1989.
DOI : 10.1109/16.19963

V. Vidojkovic, G. Mangraviti, K. Khalaf, V. Szortyka, K. Vaesen et al., A Low Power 57-to-66GHz Transceiver in 40nm LP CMOS with -17dB EVM at 7Gb/s, IEEE ISSCC, pp.268-269, 2012.

V. Vidojkovic, V. Szortyka, K. Khalaf, G. Mangraviti, S. Brebels et al., A low-power radio chipset in 40nm LP CMOS with beamforming for 60GHz high-data-rate wireless communication, 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers, pp.236-237, 2013.
DOI : 10.1109/ISSCC.2013.6487715

C. Wang, H. Chang, P. Wu, K. Lin, T. Huang et al., A 60GHz Low-Power Six-Port Transceiver for Gigabit Software-Defined Transceiver Applications, 2007 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, pp.192-193, 2007.
DOI : 10.1109/ISSCC.2007.373359

D. Webster, J. Scott, and D. Haigh, Control of circuit distortion by the derivative superposition method [MMIC amplifier], IEEE Microwave and Guided Wave Letters, vol.6, issue.3, pp.123-125, 1993.
DOI : 10.1109/75.481087

. Wireless-gigabit-alliance, WiGig White Paper : Defining the Future of Multi- Gigabit Wireless Communications, 2010.

P. Wright, J. Lees, J. Benedikt, P. J. Tasker, and S. C. Cripps, A Methodology for Realizing High Efficiency Class-J in a Linear and Broadband PA, IEEE Transactions on Microwave Theory and Techniques, vol.57, issue.12
DOI : 10.1109/TMTT.2009.2033295

K. Yamauchi, K. Mori, M. Nakayama, Y. Itoh, Y. Mitsui et al., A novel series diode linearizer for mobile radio power amplifiers, 1996 IEEE MTT-S International Microwave Symposium Digest, pp.831-834, 1996.
DOI : 10.1109/MWSYM.1996.511066

H. C. Yeh, C. C. Chiong, S. Aloui, and H. Wang, Analysis and Design of Millimeter-Wave Low-Voltage CMOS Cascode LNA With Magnetic Coupled Technique, IEEE Transactions on Microwave Theory and Techniques, vol.60, issue.12, pp.4066-4079, 2012.
DOI : 10.1109/TMTT.2012.2224365

D. Zhao, S. Kulkarni, and P. Reynaert, A 60-GHz Outphasing Transmitter in 40-nm CMOS, IEEE Journal of Solid-State Circuits, vol.47, issue.12, pp.3172-3183, 2012.
DOI : 10.1109/JSSC.2012.2216692

Y. Zhao and J. R. Long, A Wideband, Dual-Path, Millimeter-Wave Power Amplifier With 20 dBm Output Power and PAE Above 15% in 130 nm SiGe-BiCMOS, IEEE Journal of Solid-State Circuits, vol.47, issue.9, pp.1981-1997, 2012.
DOI : 10.1109/JSSC.2012.2201275

D. Zhao and P. Reynaert, A 60-GHz Dual-Mode Class AB Power Amplifier in 40-nm CMOS, IEEE Journal of Solid-State Circuits, vol.48, issue.10, pp.2323-2337, 2013.
DOI : 10.1109/JSSC.2013.2275662

. Liste-des-travaux-publiés-brevets, Amplificateur de puissance RF à plage multiple, p.100856

B. Leite, E. Kerhervé, A. Ghiotto, A. Larie, B. Martineau et al., 60 GHz 28 nm CMOS transformer-coupled power amplifier for WiGig applications, Electronics Letters, vol.50, issue.20, pp.1451-1453, 2014.
DOI : 10.1049/el.2014.1979
URL : https://hal.archives-ouvertes.fr/hal-01088908

:. B. Conférences-internationales, N. Moret, E. Deltimple, A. Kerhervé, B. Larie et al., A 60 GHz Highly Reliable Power Amplifier with 13 dBm Psat 15% Peak PAE in 65nm CMOS Technology IEEE 15 th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) A compact 60GHz power amplifier using slow-wave transmission lines in 65nm CMOS, IEEE European Microwave Integrated Circuits Conference (EuMIC), pp.61-64, 2013.

A. Larie, E. Kerhervé, B. Martineau, and D. Belot, A wideband 65nm CMOS transformer-coupled power amplifier for WiGig applications, 2014 9th European Microwave Integrated Circuit Conference, pp.175-178, 2014.
DOI : 10.1109/EuMIC.2014.6997786
URL : https://hal.archives-ouvertes.fr/hal-01110620

S. Cmos-reconfigurable-power-amplifier-with and 2. Pae, 18.2dBm P -1dB and 74mW P DC (accepté) Conférences internationales invitées, IEEE International Solid-State Circuits Conference (ISSCC) From 65nm to 28nm Power Amplifiers for 60GHz Applications IEEE International Symposium Radio- Frequency Integration Technology (RFIT), 2014.