Skip to Main content Skip to Navigation
Theses

Caractérisation des effets parasites dans les HEMTs GaN : développement d'un banc de mesure 3ω

Abstract : This report is devoted to the development of a new measurement bench for thermal impedance characterization of GaN HEMTs. This measurement test set uses the so-called « 3ω » technique, which consists to measure the electrical signal at third harmonic real image of the thermal magnitude variations of the device. A sweep in function of the excitation frequency allows extracting of the thermal impedance. The measurement results have been validated by electrical simulation. Other complementary studies were performed to identify the trapping effects using different methods to extract the traps signature. The realization of nonlinear models is presented for AlGaN HEMT / GaN and InAIN / GaN to the power amplification applications in frequency bands X and K.
Document type :
Theses
Complete list of metadata

Cited literature [109 references]  Display  Hide  Download

https://tel.archives-ouvertes.fr/tel-01137882
Contributor : Abes Star :  Contact
Submitted on : Tuesday, March 31, 2015 - 4:08:05 PM
Last modification on : Thursday, May 17, 2018 - 3:52:02 AM
Long-term archiving on: : Wednesday, July 1, 2015 - 11:46:09 AM

File

2014LIMO0048.pdf
Version validated by the jury (STAR)

Identifiers

  • HAL Id : tel-01137882, version 1

Collections

Citation

Mustafa Avcu. Caractérisation des effets parasites dans les HEMTs GaN : développement d'un banc de mesure 3ω. Electronique. Université de Limoges, 2014. Français. ⟨NNT : 2014LIMO0048⟩. ⟨tel-01137882⟩

Share

Metrics

Record views

580

Files downloads

4273