]. A. Aga00a, S. Agarwal, O. Ryu, J. W. Kordina, and . Palmour, 2600 V, 12 A, 4H- SiC, Asymmetrical Gate Turn Off (GTO) Thyristor Development, Materials Science Forum, pp.338-3421387, 2000.

]. A. Aga00b, S. Agarwal, M. Seshadri, S. Macmillan, J. Mani et al., 4H-SiC p-n diodes and gate turn off thyristors for high-power, high-temperature applications, Solid-State Electronics, vol.44, pp.303-308, 2000.

]. A. Aga01, P. Agarwal, M. Ivanov, J. Levinshtein, S. Palmour et al., Turn-off Performance of a 2.6 kV 4H-SiC Asymmetrical GTO Thyristor, Materials Science Forum, pp.353-356743, 2001.

]. A. Aga05, B. Agarwal, J. Damsky, S. Richmond, C. Krishnaswami et al., The First Demonstration of the 1 cm x 1 cm SiC Thyristor Chip, Proceedings of the 17 International Symposium on Power Semiconductor Devices and IC's, p.195, 2005.

N. Arssi, Conception d'un Thyristor 5 kV en carbure de silicium pour assurer la génération d'impulsions de forte énergie, Thèse de doctorat, 2002.

M. Bakowski, U. Gustafsson, and E. U. Lindefelt, Simulation of SiC High Power Devices, physica status solidi (a), vol.142, issue.1, pp.421-440, 1997.
DOI : 10.1002/1521-396X(199707)162:1<421::AID-PSSA421>3.0.CO;2-B

W. Bartsch, R. Schoerner, and K. O. Dohnke, Optimization of Bipolar SiC-Diodes by Analysis of Avalanche Breakdown Performance, Materials Science Forum, vol.645, issue.648, pp.645-648909, 2010.
DOI : 10.4028/www.scientific.net/MSF.645-648.909

]. S. Bel04, G. Bellone, E. H. Licciardo, and . Neitzert, A novel measurement method of the spatial carrier lifetime profile based on the OCVD technique, Proceedings of the 2004 International Conference on Microelectronic Test Structures, 2004.

P. Brosselard, Conception, Réalisation et Caractérisation d'interrupteurs (thyristors et JFETs) haute tension (5kV) en carbure de silicium, Thèse de doctorat, 2004.

P. Brosselard, T. Bouchet, D. Planson, S. Scharnholz, G. Pâques et al., A 3.5 kV Thyristor in 4H-SiC with a JTE Periphery, Materials Science Forum, pp.483-4851005, 2005.
URL : https://hal.archives-ouvertes.fr/hal-00803057

P. Brosselard, N. Camara, X. Jordà, M. Vellvehi, E. Bano et al., Reliability Aspects of High Voltage 4H-SiC JBS Diodes, Materials Science Forum, vol.600, issue.603, pp.600-603935, 2009.
DOI : 10.4028/www.scientific.net/MSF.600-603.935

[. Salah, Contribution à la conception des dispositifs de puissance en carbure de silicium : étude et extraction des paramètres, Thèse de doctorat, 2007.

J. Caldwell, A. Giles, R. Stahlbush, M. Ancona, O. Glembocki et al., On the Luminescence and Driving Force of Stacking Faults in 4H-SiC, Materials Science Forum, vol.645, issue.648, pp.645-648277, 2010.
DOI : 10.4028/www.scientific.net/MSF.645-648.277

W. Chen, N. Son, E. Janzen, D. Hofmann, and E. B. Meyer, Effective Masses in SiC Determined by Cyclotron Resonance Experiments, physica status solidi (a), vol.81, issue.1, pp.79-93, 1997.
DOI : 10.1002/1521-396X(199707)162:1<79::AID-PSSA79>3.0.CO;2-D

]. W. Cho57, L. Choyke, and . Patrick, Absorption of Light in Alpha SiC near the Band Edge, Physical Review, vol.105, pp.1721-1723, 1957.

]. W. Cho62, L. Choyke, and . Patrick, Exciton Recombination Radiation and Phonon Spectrum of 6H SiC, Physical Review, vol.127, pp.1868-1877, 1962.

W. Choyke and L. Patrick, Refractive Index and Low-Frequency Dielectric Constant of 6H SiC, Journal of the Optical Society of America, vol.58, issue.3, pp.377-379, 1968.
DOI : 10.1364/JOSA.58.000377

G. Chung, M. J. Loboda, S. Sundaresan, and E. R. Singh, Correlation between Carrier Recombination Lifetime and Forward Voltage Drop in 4H-SiC PiN Diodes, Materials Science Forum, vol.645, issue.648, pp.645-648905, 2010.
DOI : 10.4028/www.scientific.net/MSF.645-648.905

M. K. Das, Q. Zhang, R. Callanan, C. Capell, J. Clayton et al., A 13 kV 4H-SiC n-channel IGBT with Low Rdiff,on and Fast Switching, Materials Science Forum, pp.600-6031183, 2009.

]. S. Dha10, S. Dhar, E. A. Ryu, and . Agarwal, A study on Pre-Oxidation Nitrogen Implantation for the Improvement of Channel Mobility in 4H-SiC MOS- FETs, IEEE Transactions on Electron Devices, vol.57, pp.1195-1200, 2010.

]. N. Dhe09, D. Dheilly, P. Planson, J. Brosselard, P. Hassan et al., Measurement of Carrier Lifetime Temperature Dependence in 3.3kV 4H-SiC PiN Diodes using OCVD Technique, Materials Science Forum, pp.615-617703, 2009.

M. Domeij, E. Danielsson, H. Lee, C. Zetterling, and E. M. Östling, Current Gain of 4H-SiC Bipolar Transistors Including the Effect of Interface States, Materials Science Forum, vol.483, issue.485, pp.483-485889, 2005.
DOI : 10.4028/www.scientific.net/MSF.483-485.889

M. Domeij, C. Zaring, A. Konstantinov, M. Nawaz, J. Svedberg et al., Reimark. 2.2 kV SiC BJTs with low V CESAT fast switching and shortcircuit capability, Materials Science Forum, pp.645-6481033, 2010.

]. R. Elp10, P. Elpelt, E. J. Friedrichs, and . Biela, Fast switching with SiC VJFETs -influence of the device topology, Materials Science Forum, pp.645-648933, 2010.

L. Farese, G. Malm, M. Domeij, and E. M. Östling, Experimental Study of Degradation in 4H-SiC BJTs by Means of Electrical Characterization and Electroluminescence, Materials Science Forum, vol.645, issue.648, pp.645-6481037, 2010.
DOI : 10.4028/www.scientific.net/MSF.645-648.1037

T. Fujimoto, T. Aigo, M. Nakabayashi, S. Sato, M. Katsuno et al., Time Sequential Evolutions of Optically-Induced Single Shockley Stacking Faults Formed in 4H-SiC Epitaxial Layers, Materials Science Forum, vol.645, issue.648, pp.645-648319, 2010.
DOI : 10.4028/www.scientific.net/MSF.645-648.319

]. A. Gal98, J. Galeckas, V. Linnros, U. Grivickas, C. Lindefelt et al., Evaluation of Auger recombination rate in 4H-SiC, Materials Science Forum, pp.264-2533, 1998.

A. Galeckas, P. Grivickas, V. Grivickas, V. Bikbajevas, and E. J. Linnros, Temperature Dependence of the Absorption Coefficient in 4H- and 6H-Silicon Carbide at 355 nm Laser Pumping Wavelength, physica status solidi (a), vol.264, issue.268, pp.613-620, 2002.
DOI : 10.1002/1521-396X(200206)191:2<613::AID-PSSA613>3.0.CO;2-T

]. Y. Ger92, F. D. Gerstenmaier, and . Pfirsch, Theory of Abnormal Thyristor Forward Voltage Behavior, IEEE Transactions on Industry Applications, vol.28, pp.1242-1249, 1992.

]. R. Gha08, H. Ghandi, M. Lee, B. Domeij, C. Buono et al., Fabrication of 2700-V 12-m?.cm 2 non ion-implanted 4H-SiC BJTs with common-emitter current gain of 50, IEEE Electron Device Letters, vol.29, pp.1135-1137, 2008.

]. R. Gha09a, B. Ghandi, M. Buono, G. Domeij, C. Malm et al., High-Voltage 4H-SiC PiN Diodes With Etched Junction Termination Extension, IEEE Electon Devices Letters, vol.30, pp.1170-1172, 2009.

]. R. Gha09b, H. Ghandi, M. Lee, B. Domeij, C. Buono et al., Implantation-Free Low on-resistance 4H-SiC BJTs with Common- Emitter Current Gain of 50 and High Blocking Capability, Materials Science Forum, pp.615-617833, 2009.

W. Götz, A. Schöner, G. Pensl, W. Suttrop, W. Choyke et al., ???silicon carbide, Journal of Applied Physics, vol.73, issue.7, pp.3332-3338, 1993.
DOI : 10.1063/1.352983

T. Hatakeyama, T. Watanabe, T. Shinohe, K. Kojima, K. Arai et al., Impact ionization coefficients of 4H silicon carbide, Applied Physics Letters, vol.85, issue.8, pp.1380-1382, 2004.
DOI : 10.1063/1.1784520

T. Hayashi, K. Asano, J. Suda, and E. T. Kimoto, Temperature and Injection Level Dependencies of Carrier Lifetimes in p-Type and n-Type 4H-SiC Epilayers, Materials Science Forum, vol.645, issue.648, pp.645-648199, 2010.
DOI : 10.4028/www.scientific.net/MSF.645-648.199

T. Hiyoshi, T. Hori, E. T. Suda, and . Kimoto, Bevel Mesa Combined with Implanted Junction Termination Structure for 10 kV SiC PiN Diodes, Materials Science Forum, vol.600, issue.603, pp.600-603995, 2009.
DOI : 10.4028/www.scientific.net/MSF.600-603.995

J. Hu, L. X. Li, P. Alexandrov, X. Wang, and J. H. Zhao, 5 kV, 9.5 A SiC JBS Diodes with Non-Uniform Guard Ring Edge Termination for High Power Switching Application, Materials Science Forum, vol.600, issue.603, pp.600-603947, 2009.
DOI : 10.4028/www.scientific.net/MSF.600-603.947

]. B. Hul09a, C. Hull, S. Jonas, M. Ryu, M. Das et al., Performance of 60 A, 1200 V 4H-SiC DMOSFETs, Materials Science Forum, pp.615-617749, 2009.

]. M. Ike80, H. Ikeda, E. T. Matsunami, and . Tanaka, Site effect on the impurity levels in 4H, 6H, and 15R SiC, Physical Review B, vol.22, issue.6, pp.2832-2854, 1980.

E. Imhoff, F. Kub, and E. K. Hobart, Grayscale Junction Termination for High-Voltage SiC Devices, Materials Science Forum, vol.615, issue.617, pp.615-617691, 2009.
DOI : 10.4028/www.scientific.net/MSF.615-617.691

P. Ivanov, M. Levinshtein, S. Rumyantsev, A. Agarwal, and E. J. Palmour, Turn-off operation of a MOS-gate 2.6 kV 4H???SiC gate turn-off thyristor, Solid-State Electronics, vol.44, issue.12, pp.2155-2159, 2000.
DOI : 10.1016/S0038-1101(00)00182-9

]. P. Iva06, M. E. Ivanov, J. W. Levinshtein, M. K. Palmour, E. B. Das et al., High power 4H-SiC PiN diodes (10 kV class) with record high carrier lifetime, Solid State Electronics, vol.50, pp.1368-1370, 2006.

M. R. Jennings, A. Perez-tomas, M. Davies, D. Walker, L. Zhu et al., Analysis of Al/Ti, Al/Ni multiple and triple layer contacts to p-type 4H-SiC, Solid-State Electronics, vol.51, issue.5, pp.797-801, 2007.
DOI : 10.1016/j.sse.2007.02.037

I. Kang, J. Song, S. Joo, W. Bahng, S. Kim et al., Effect of the Doping Concentration and Space of Both p-Grid and Field Limiting Ring on 4H-SiC Junction Barrier Schottky Diode with Single Ion Implantation Process, Materials Science Forum, vol.600, issue.603, pp.600-603959, 2009.
DOI : 10.4028/www.scientific.net/MSF.600-603.959

]. A. Kin10, T. Kinoshita, T. Ohyanagi, K. Yatsuo, H. Fukuda et al., Fabrication of 1.2kV, 100 A, 4H-SiC(0001 and (000-1) junction barrier Schottky diodes with almost same Schottky barrier height, Materials Science Forum, pp.645-648893, 2010.

P. B. Klein, Identification of Defects Limiting the Carrier Lifetime in n^- Epitaxial Layers of 4H-SiC, Materials Science Forum, vol.645, issue.648, pp.645-648193, 2010.
DOI : 10.4028/www.scientific.net/MSF.645-648.193

]. P. Kle10b, R. Klein, K. Myers-ward, B. L. Lew, C. R. Vanmil et al., Temperature Dependence of the Carrier Lifetime in 4H-SiC Epilayers, Materials Science Forum, pp.645-648203, 2010.

]. A. Kon97, Q. Konstantinov, N. Wahab, E. U. Nordell, and . Lindefelt, Ionization rates and critical fields in 4H silicon carbide, Applied Physics Letters, vol.71, pp.90-92, 1997.

]. A. Kon98, Q. Konstantinov, N. Wahab, E. U. Nordell, and . Lindefelt, Study of Avalanche Breakdown and Impact Ionization in 4H Silicon Carbide, Journal of Electronic Materials, vol.27, pp.335-341, 1998.

]. H. Kon10, T. Kono, M. Suzuki, C. Mizukami, S. Ota et al., 1360 V, 5.0 m?.cm 2 double-implanted MOSFETs fabricated on 4H-SiC(000-1), Materials Science Forum, pp.645-648987, 2010.

]. R. Kos09, T. Kosugi, Y. Sakata, K. Sakuma, T. Suzuki et al., Voltage- Current (V-I) Characteristics of 1, 5kV Class pn Junctions with p-well Structures on (0001) 4H-SiC. Materials Science Forum, pp.615-617683, 2009.

]. A. Kum09, . Kumta, J. H. Rusli, and . Xia, Field-plate Terminated Pt/n-4H-SiC SBD Using Thermal SiO2 and Sputter Deposited AlN Dielectric Stack, Materials Science Forum, pp.600-603987, 2009.

M. Lades, Modeling and Simulation of Wide Bandgap Semiconductor Devices : 4H/6H-SiC, Thèse de doctorat, 2000.

]. Lee09, M. Lee, C. Domeij, R. Zetterling, M. Ghandi et al., 1200 V 4H-SiC BJTs with a Common Emitter Current Gain of 60 and Low On-resistance, Materials Science Forum, pp.600-6031151, 2009.

M. Levinshtein, T. Mnatsakanov, P. Ivanov, J. Palmour, S. Rumyantsev et al., "Paradoxes" of carrier lifetime measurements in high-voltage SiC diodes, IEEE Transactions on Electron Devices, vol.48, issue.8, pp.1703-1710, 2001.
DOI : 10.1109/16.936692

M. Levinshtein, P. Ivanov, A. Agarwal, and E. J. Palmour, Optical switch-on of silicon carbide thyristor, Electronics Letters, vol.38, issue.12, pp.592-593, 2002.
DOI : 10.1049/el:20020415

]. B. Li99, L. Li, E. J. Cao, and . Zhao, High Current Density 800-V 4H-SiC Gate Turn- Off Thyristors, IEEE Electron Device Letters, vol.20, pp.219-222, 1999.

]. U. Lin98 and . Lindefelt, Doping-induced band edge displacements and band gap narrowing in 3C-, 4H-, 6H-SiC, and Si, Journal of Applied Physics, vol.84, p.2628, 1998.

]. W. Loh08, B. K. Loh, J. S. Ng, S. I. Ng, H. Soloviev et al., Impact Ionization Coefficients in 4H-SiC, IEEE Transactions on Electron Devices, vol.55, issue.8, pp.1984-1990, 2008.
DOI : 10.1109/TED.2008.926679

P. Losee, Y. Wang, C. Li, S. Sharma, I. Bhat et al., Comparative Evaluation of Anode Layers on the Electrical Characteristics of High Voltage 4H-SiC PiN Diodes, Materials Science Forum, vol.600, issue.603, pp.600-6031003, 2009.
DOI : 10.4028/www.scientific.net/MSF.600-603.1003

K. Matocha, P. Losee, A. Gowda, E. Delgado, G. Dunne et al., Performance and Reliability of SiC MOSFETs for High-Current Power Modules, Materials Science Forum, vol.645, issue.648, pp.645-6481123, 2010.
DOI : 10.4028/www.scientific.net/MSF.645-648.1123

S. I. Maximenko, J. A. Freitas, J. , P. B. Klein, A. Shrivastava et al., Cathodoluminescence study of the properties of stacking faults in 4H-SiC homoepitaxial layers, Applied Physics Letters, vol.94, issue.9, p.94, 2009.
DOI : 10.1063/1.3089231

E. Motto, J. Donlon, M. Tabata, H. Takahashi, Y. Yu et al., Application characteristics of an experimental RB-IGBT (reverse blocking IGBT) module, Conference Record of the 2004 IEEE Industry Applications Conference, 2004. 39th IAS Annual Meeting., pp.1-4, 2004.
DOI : 10.1109/IAS.2004.1348675

]. K. Nak09, Y. Nakayama, Y. Sugawara, K. Miyanagi, S. Asano et al., Behavior of Stacking Faults in TEDREC Phenomena for 4.5 kV SiCGT, Materials Science Forum, pp.600-6031175, 2009.

M. Nawaz, C. Zaring, J. Bource, M. Schupbach, M. Domeij et al., Assessment of High and Low Temperature Performance of SiC BJTs, Materials Science Forum, vol.615, issue.617, pp.615-617825, 2009.
DOI : 10.4028/www.scientific.net/MSF.615-617.825

]. B. Ng03, J. Ng, R. David, G. Tozer, F. Rees et al., Nonlocal Effects in Thin 4H-SiC UV Avalanche Photodiodes, IEEE Transactions on Electron Devices, vol.50, pp.1724-1732, 2003.

W. [. O-'brien, E. S. Shaheen, and . Bayne, Evaluation of 4 mm x 4 mm Silicon Carbide Thyristors, IEEE Transactions on Dielectrics and Electrical Insulation, vol.14, issue.4, pp.986-993, 2007.
DOI : 10.1109/TDEI.2007.4286538

W. [. O-'brien, V. Shaheen, C. Chiscop, E. M. Scozzie, and . Koebke, Evaluation of Si and SiC SGTOs for High-Action Army Applications, IEEE Transactions on Magnetics, vol.45, issue.1, pp.402-406, 2009.
DOI : 10.1109/TMAG.2008.2008549

]. C. Ota09, J. Ota, K. Nishio, T. Takao, T. Hatakeyama et al., Doping Concentration Optimization for Ultralow-loss 4H-SiC Floating Junction Schottky Barrier Diode

]. L. Pat65, W. J. Patrick, D. R. Choyke, and . Hamilton, Luminescence of 4H SiC, and Location of Conduction-Band Minima in SiC Polytypes, Physical Review, vol.137, pp.1515-1520, 1965.

L. Patrick and W. Choyke, Static Dielectric Constant of SiC, Physical Review B, vol.2, issue.6, p.2255, 1970.
DOI : 10.1103/PhysRevB.2.2255

C. Persson and U. Lindefelt, Relativistic band structure calculation of cubic and hexagonal SiC polytypes, Journal of Applied Physics, vol.82, issue.11, pp.5496-5508, 1997.
DOI : 10.1063/1.365578

]. R. Per05, D. Perez, A. Tournier, P. Perez-tomas, N. Godignon et al., Planar edge termination design and technology considerations for 1.7-kV 4H-SiC PiN diodes, IEEE Transactions on Electron Devices, vol.52, pp.2309-2316, 2005.

D. Perrone, M. Naretto, S. Ferrero, L. Scaltrito, and C. F. Pirri, 4H-SiC Schottky Barrier Diodes Using Mo-, Ti- and Ni-Based Contacts, Materials Science Forum, vol.615, issue.617, pp.615-617647, 2009.
DOI : 10.4028/www.scientific.net/MSF.615-617.647

D. Peters, W. Bartsch, B. Thomas, and E. R. Sommer, 6.5 kV SiC PiN Diodes with Improved Forward Characteristics, Materials Science Forum, vol.645, issue.648, pp.645-648901, 2010.
DOI : 10.4028/www.scientific.net/MSF.645-648.901
URL : https://hal.archives-ouvertes.fr/jpa-00251925

D. Planson, N. Dheilly, D. Tournier, and E. P. Brosselard, Protection périphérique d'une diode bipolaire SiC-4H. Simulation électrique de JTE à dopage variable, 2008.

]. T. Pod00, S. Podlesak, F. M. Schneider, and . Simon, Single Shot and Burst Repetitive Operation of Involute Gate 125 mm Symmetric Thyristors up to 221 kA with a di/dt of 2, IEEE Transactions on Plasma Science, vol.28, pp.1528-1532, 2000.

]. A. Pow07, J. Powell, S. Jenny, H. Muller, V. Hoegood et al., SiC material and devices, tome 2, chapitre Growth of SiC substrates, World Scientific, pp.15-16, 2007.

]. R. Rag97, B. J. Raghunathan, and . Baliga, Measurement of Electron and Hole Impact Ionization Coefficients for SiC, IEEE International Symposium on Power Semiconductor Devices and IC's, pp.173-176, 1997.

C. Raynaud, D. Nguyen, N. Dheilly, D. Tournier, P. Brosselard et al., Optical beam induced current measurements: principles and applications to SiC device characterization, physica status solidi (a), vol.433, issue.436, pp.2273-2283, 2009.
DOI : 10.1002/pssa.200825183
URL : https://hal.archives-ouvertes.fr/hal-00398971

]. D. Ris07 and . Risaletto, Caractérisation électrique en commutation de diodes haute tension en carbure de silicium, Thèse de doctorat, 2007.

]. A. Rit10, D. Ritenour, V. Sheridan, E. J. Bondarenko, and . Casady, Performance of 15 mm 2 1200 V Normally-Off SiC VJFETs with 120 A Saturation Current, Materials Science Forum, pp.645-648937, 2010.

M. Ruff, H. Schulze, and E. U. Kellner, Progress in the development of an 8-kV light-triggered thyristor with integrated protection functions, IEEE Transactions on Electron Devices, vol.46, issue.8, pp.1768-1774, 1999.
DOI : 10.1109/16.777168

]. Ryu01, A. K. Ryu, R. Agarwal, E. J. Singh, and . Palmour, 3100 V, Asymmetrical, Gate Turn-Off (GTO) Thyristors in 4H-SiC, IEEE Electron Device Letters, vol.22, pp.127-129, 2001.

S. Ryu, S. Krishnaswami, M. O. 'loughlin, J. Richmond, A. Agarwal et al., 10-kV, 123-m<tex>$Omega cdot $</tex>cm<tex>$^2$</tex>4H-SiC Power DMOSFETs, IEEE Electron Device Letters, vol.25, issue.8, pp.556-558, 2004.
DOI : 10.1109/LED.2004.832122

V. Sankaran, J. Hudgins, and E. W. Portnoy, Role of the amplifying gate in the turn-on process of involute structure thyristors, IEEE Transactions on Power Electronics, vol.5, issue.2, pp.125-132, 1990.
DOI : 10.1109/63.53149

]. W. Sch94, G. Schaffer, K. Negley, E. J. Irvine, and . Palmour, Conductivity Anisotropy in Epitaxial 6H an 4H SiC, Material Research Society Symposium Proceedings, tome 339, pp.595-600, 1994.

R. Schorner, P. Friedrichs, D. Peters, D. Stephani, S. Dimitrijev et al., Enhanced channel mobility of 4H???SiC metal???oxide???semiconductor transistors fabricated with standard polycrystalline silicon technology and gate-oxide nitridation, Applied Physics Letters, vol.80, issue.22, pp.4253-4255, 2002.
DOI : 10.1063/1.1483125

S. Scharnholz, V. Zorngiebel, P. Brosselard, D. Planson, M. Lazar et al., Electrical characterization of 4H-SiC GTO-thyristors realized by ISL, 2004.

S. Scharnholz, B. Vergne, J. Konrath, G. Pâques, and E. V. Zorngiebel, Pulse Current Characterization of SiC GTO Thyristors, European Conference on Silicon Carbide and Related Materials, 2010.
DOI : 10.4028/www.scientific.net/MSF.679-680.682

P. Shaffer, Refractive Index, Dispersion, and Birefringence of Silicon Carbide Polytypes, Applied Optics, vol.10, issue.5, pp.1034-1036, 1971.
DOI : 10.1364/AO.10.001034

H. Shimizu, Y. Onose, T. Someya, H. Onose, and E. N. Yokoyama, Normallyoff 4H-SiC Vertical JFET with Large Current Density, Materials Science Forum, pp.600-6031059, 2009.
DOI : 10.4028/www.scientific.net/msf.600-603.1059

A. Shrivastava, P. B. Klein, E. R. Glaser, J. D. Caldwell, A. V. Bolotnikov et al., Long Carrier Lifetime in 4H-SiC Epilayers Using Chlorinated Precursors, Materials Science Forum, vol.615, issue.617, pp.615-617291, 2009.
DOI : 10.4028/www.scientific.net/MSF.615-617.291

]. A. Shr09b, P. Shrivastava, B. Muzykov, S. M. Pearman, T. S. Angel et al., Investigation of Triangular Defects in 4H-SiC 4 o off cut (0001) Si Face Epilayers Grown by CVD, Materials Science Forum, pp.600-603139, 2009.

]. N. Son00, P. Son, W. Hai, C. Chen, B. Hallin et al., Hole Effective Masses in 4H SiC Determined by Optically Detected Cyclotron Resonance, Materials Science Forum, vol.338, issue.342, pp.338-342563, 2000.
DOI : 10.4028/www.scientific.net/MSF.338-342.563

E. Spahn, K. Sterzelmeier, C. Gauthier-blum, V. Brommer, L. Sinniger et al., 50-kJ Ultracompact Pulsed-Power Supply Unit for Active Protection Launcher Systems, IEEE Transactions on Magnetics, vol.45, issue.1, pp.462-466, 2009.
DOI : 10.1109/TMAG.2008.2008527

]. S. Sri99, T. Sridhara, R. Eperjesi, E. W. Devaty, and . Choyke, Penetration depths in the ultraviolet for 4H, 6H and 3C silicon carbide at seven common laser pumping wavelengths, Materials Science and Engineering, pp.61-62229, 1999.

]. R. Sta09, B. L. Stahlbush, R. L. Vanmil, K. Myers-ward, D. K. Lew et al., Basal plane dislocation reduction in 4H-SiC epitaxy by growth interruptions, Applied Physics Letters, vol.94, issue.4, 2009.

]. H. Sto74, J. G. Storm, and . Clair, An Involute Gate-Emitter Configuration for Thyristors, IEEE Transactions on Electron Devices, vol.21, pp.520-522, 1974.

Y. Sugawara, D. Takayama, K. Asano, R. Singh, J. Palmour et al., 12-19 kV 4H-SiC pin diodes with low power loss, Proceedings of the 13th International Symposium on Power Semiconductor Devices & ICs. IPSD '01 (IEEE Cat. No.01CH37216), 2001.
DOI : 10.1109/ISPSD.2001.934552

]. Y. Sug09, S. Sugawara, Y. Ogata, K. Miyanagi, S. Asano et al., Electron Irradiation Lifetime Control for SiC Bipolar Devices of 200 kVA High Power SiC Inverters, Materials Science Forum, pp.600-6031179, 2009.

]. S. Sun10, H. Sundaresan, D. Issa, E. R. Veereddy, and . Singh, Large Area >8 kV SiC GTO Thyristors with innovative Anode-Gate designs, Materials Science Forum, pp.645-6481021, 2010.

D. Tournier, A. Perez-tomas, P. Godignon, J. Millan, H. Mank et al., Impact of fine surface Chemical-Mechanical Polishing on the manufacturing yield of 1200V SiC Schottky Barrier Diodes, Proceedings. ISPSD '05. The 17th International Symposium on Power Semiconductor Devices and ICs, 2005., 2005.
DOI : 10.1109/ISPSD.2005.1487995

]. T. Tra00, F. Trajkovic, P. Udrea, E. G. Waind, and . Amaratunga, The effect of static and dynamic parasitic charge in the termination area of high voltage devices and possible solutions, International Symposium on Power Semiconductor Devices and ICs, 2000.

]. L. Tul08, E. Tully, D. Fulkerson, E. R. Goerz, and . Speer, Evaluation of Light- Triggered Thyristors for Pulsed Power Applications, IEEE International Power Modulators and High Voltage Conference, 2008.

]. A. Uda07, E. Udal, and . Velmre, Investigation of charge carrier lifetime temperature-dependence in 4H-SiC diodes, Materials Science Forum, pp.556-557375, 2007.

H. Vang, Optimisation des étapes technologiques pour la fabrication de composants de puissance en carbure de silicium, Thèse de doctorat, 2006.

H. Vang, S. Scharnholz, C. Raynaud, M. Lazar, G. Pâques et al., Impact of RIE Etching on the Breakdown Voltage of 4H-SiC Mesa Diodes, Materials Science Forum, vol.600, issue.603, pp.600-6031011, 2009.
DOI : 10.4028/www.scientific.net/MSF.600-603.1011

K. Vassilevski, K. Hilton, N. Wright, M. Uren, A. Munday et al., Silicon Carbide Vertical JFET Operating at High Temperature, Materials Science Forum, vol.600, issue.603, pp.600-6031063, 2009.
DOI : 10.4028/www.scientific.net/MSF.600-603.1063

K. Vassilevski, I. Nikitina, A. Horsfall, N. Wright, and E. C. Johnson, 4.6 kV, 10.5 m?.cm 2 Nickel Silicide Schottky Diodes on Commercial 4H-SiC Epitaxial Wafers, Materials Science Forum, pp.645-648897, 2010.
URL : https://hal.archives-ouvertes.fr/hal-01391852

]. V. Vel09, T. Veliadis, M. Mcnutt, H. Mccoy, G. Hearne et al., 1200-V, 50-A, Silicon Carbide Vertical Junction Field Effect Transistors for Power Switching Applications, Materials Science Forum, pp.600-6031047, 2009.

]. V. Vel10, H. Veliadis, E. J. Hearne, R. Stewart, A. Howell et al., Feasibility of efficient power switching using short-channel 1200-V Normally-Off SiC VJFETs ; experimental analysis and simulations, Materials Science Forum, pp.645-648929, 2010.

B. Vergne, G. Pâques, J. Konrath, S. Scharnholz, N. Dheilly et al., Chambre à Vide de Caractérisation Haute Tension de Composants Semiconducteurs Nus, 2010.

J. Wang and A. Huang, Design and Characterization of High-Voltage Silicon Carbide Emitter Turn-off Thyristor, IEEE Transactions on Power Electronics, vol.24, issue.5, pp.1189-1197, 2009.
DOI : 10.1109/TPEL.2009.2013861

T. Yamamoto, J. Kojima, T. Endo, E. Okuno, T. Sakakibara et al., 1200-V JBS Diodes with Low Threshold Voltage and Low Leakage Current, Materials Science Forum, vol.600, issue.603, pp.600-603939, 2009.
DOI : 10.4028/www.scientific.net/MSF.600-603.939

]. B. Zha03a, Y. Zhang, X. Liu, J. Zhou, E. A. Hawley et al., The high power and high frequency operation of the emitter turn-off (ETO) thyristor, The 29 th Annual Conference of the IEEE Industial Electronics Society, 2003.

J. Zhao, P. Alexandrov, and E. X. Li, Demonstration of the first 10-kV 4H-SiC Schottky barrier diodes, IEEE Electron Device Letters, vol.24, issue.6, pp.402-404, 2003.
DOI : 10.1109/LED.2003.813370

J. Zhang, J. Zhao, P. Alexandrov, and E. T. Burke, Demonstration of first 9.2???kV 4H-SiC bipolar junction transistor, Electronics Letters, vol.40, issue.21, pp.1381-1383, 2004.
DOI : 10.1049/el:20046223

J. Zhao, P. Alexandrov, J. Zhang, and E. X. Li, Fabrication and characterization of 11-kV normally off 4H-SiC trenched-and-implanted vertical junction FET. Electron Device Letters, pp.474-476, 2004.

Q. Zhang, A. Agarwal, A. Burka, B. Geil, and C. Scozzie, 4H-SiC BJTs with current gain of 110. Solide-State Electronics, pp.1008-1010, 2008.

]. J. Zha09a, P. Zhang, J. H. Alexandrov, and . Zhao, 1600 V, 5.1 m?.cm 2 4H-SiC BJT with a High Current Gain of ?=70, Materials Science Forum, pp.600-6031155, 2009.

J. Zhang, L. Fursin, X. Li, X. Wang, J. H. Zhao et al., 4H-SiC Bipolar Junction Transistors with Graded Base Doping Profile, Materials Science Forum, vol.615, issue.617, pp.615-617829, 2009.
DOI : 10.4028/www.scientific.net/MSF.615-617.829

]. Q. Zha09c, C. Zhang, J. Jonas, A. Sumakeris, E. J. Agarwal et al., 12 kV 4H- SiC p-IGBTs with Record Low Specific On-resistance, Materials Science Forum, pp.600-6031187, 2009.

Q. Zhang, R. Callanan, A. Agarwal, A. Burk, M. O. 'loughlin et al., 10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC, Materials Science Forum, vol.645, issue.648, pp.645-6481025, 2010.
DOI : 10.4028/www.scientific.net/MSF.645-648.1025

D. Chante, C. Planson, B. Raynaud, E. H. Spangenberg, and . Kurz, Fabrication and Characterization of High Voltage SiC-Thyristors, Materials Science Forum, pp.433-436883, 2003.

V. Zorngiebel, S. Scharnholz, E. Spahn, P. Brosselard, and E. H. Vang, Investigations on SiC-thyristors for pulsed power applications, 2nd European Pulsed Power Symposium EPPS, 2004.