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Solution d'interconnexions pour la haute température

Abstract : Silicon has reached its usage limit in many areas such as aeronautics. One of the challenges is the design of power components operable in high temperature and/or high voltage. The use of wide bandgap materials such as silicon carbide (SiC) provides in part a solution to meet these requirements. The packaging must be adapted to these new types of components and new operating environnement. However, it appears that the planar integration (2D), consisting of wire-bonding and soldered components-attach, can not meet these expectations. This thesis aims to develop a three dimensional power module for the high temperature aeronautics applications. A new original 3D structure made of two silicon carbide dies, silver-sintered die-attaches and an encapsulation by parylene HT has been developed. Its various constituting elements, the reason for their choice, and the pratical realization of the structure are presented in this manuscript. Then, we focus on a failure mode specific to silver-sintered attaches : The silver migration. An experimental study allows to define the triggering conditions of this failure. It is extended and analyzed by numerical simulations.
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Submitted on : Saturday, March 7, 2015 - 2:45:43 AM
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  • HAL Id : tel-01127466, version 1


Raphaël Riva. Solution d'interconnexions pour la haute température. Energie électrique. INSA de Lyon, 2014. Français. ⟨NNT : 2014ISAL0064⟩. ⟨tel-01127466⟩



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