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Conception d’un onduleur triphasé à base de composants SiC en technologie JFET à haute fréquence de commutation

Abstract : Since 2000, Silicon Carbide (SiC) components are available on the market mainly as Schottky diodes and FET transistor. These new devices provide better switching performance than Silicon (Si) components that leads to a reduction of losses and operating temperatures at equivalent cooling system. Using SiC components allows to a better converter integration. It is in this context that ECA-EN has started this thesis dedicated to using SiC devices in a three-phase inverter at high switching frequency. The converter object of this study is supply by a input voltage of 450V and provides a current of 40A per phase. The components used for these study are SiC Normally-Off JFET and Schottky Diodes because these devices were commercialized at the begining of this thesis and offer better switching performance than others SiC components. FET transistors have a different structure compared to traditionnal IGBT especially their capability to conduct a reverse current with or without body diode. So it is necessary to develop new tools dedicated to the design of converters built with SiC components. These tools are based on the electrical properties of the converters and the statics and dynamics characteristics of the transistor and the diode. The results show that when the transistors conduct a reverse current, the number of components/dies can be reduced. According to data, a PCB board of an inverter leg has been built and tested at ECA-EN. The thermal measurement based on the heatsink shows that the switching frequency of an inverter leg can be increased from 12 to 100 kHz for an ouput power of 12kW.
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Xavier Fonteneau. Conception d’un onduleur triphasé à base de composants SiC en technologie JFET à haute fréquence de commutation. Electronique. INSA de Lyon, 2014. Français. ⟨NNT : 2014ISAL0059⟩. ⟨tel-01127458⟩

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