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Vieillissement et mécanismes de dégradation sur des composants de puissance en carbure de silicium (SIC) pour des applications haute température

Abstract : Since 2000, Silicon Carbide (SiC) power devices have been available on the market offering tremendous performances. This leads to really high efficiency power systems, and allows achieving significative improvements in terms of volume and weight, i.e. a better integration. Moreover, SiC devices could be used at high temperature (>200°C). However, the SiCmarket share is limited by the lack of reliability studies. This problem has yet to be solved and this is the objective of this study : aging and failure mechanisms on power devices for high temperature applications. Aging tests have been realized on SiC MOSFETs. Due to its simple drive requirement and the advantage of safe normally-Off operation, SiCMOSFET is becoming a very promising device. However, the gate oxide remains one of the major weakness of this device. Thus, in this study, the threshold voltage shift has been measured and its instability has been explained. Results demonstrate good lifetime and stable operation regarding the threshold voltage below a 300°C temperature reached using a suitable packaging. Understanding SiC MOSFET reliability issues under realistic switching conditions remains a challenge that requires investigations. A specific aging test has been developed to monitor the electrical parameters of the device. This allows to estimate the health state and predict the remaining lifetime.Moreover, the defects in the failed device have been observed by using FIB and SEM imagery. The gate leakage current appears to reflect the state of health of the component with a runaway just before the failure. This hypothesis has been validated with micrographs showing cracks in the gate. Eventually, a comparative study has been realized with the new generations of SiCMOSFET
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  • HAL Id : tel-01127292, version 1

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Rémy Ouaida. Vieillissement et mécanismes de dégradation sur des composants de puissance en carbure de silicium (SIC) pour des applications haute température. Energie électrique. Université Claude Bernard - Lyon I, 2014. Français. ⟨NNT : 2014LYO10228⟩. ⟨tel-01127292⟩

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