On the thermally activated field evaporation of surface atoms, Le Journal de Physique Colloques 45, p.9, 1984. ,
URL : https://hal.archives-ouvertes.fr/jpa-00224394
Thermal response of a field emitter subjected to ultra-fast laser illumination, Journal of Physics D: Applied Physics, vol.42, issue.12, p.12, 2009. ,
DOI : 10.1088/0022-3727/42/12/125502
Effet de champ sous éclairement ultra-bref " Application à la sonde atomique, 2010. ,
Advances in Pulsed-Laser Atom Probe: Instrument and Specimen Design for Optimum Performance, Microscopy and Microanalysis, vol.72, issue.06, p.6, 2007. ,
DOI : 10.1103/PhysRevB.30.4946
Measurement of temperature rises in the femtosecond laser pulsed three-dimensional atom probe, Applied Physics Letters, vol.88, issue.15, p.15, 2006. ,
DOI : 10.1063/1.2191412
Conditions to cancel the laser polarization dependence of a subwavelength tip, Applied Physics Letters, vol.94, issue.12, p.12, 2009. ,
DOI : 10.1063/1.3095829
Theory of Nanometric Optical Tweezers, Theory of Nanometric optical tweezers, pp.645-648, 1997. ,
DOI : 10.1103/PhysRevLett.79.645
Application à la sonde atomique, Effect of optical diffraction on laser heating of a field emitter, 1986. ,
URL : https://hal.archives-ouvertes.fr/tel-00607299
Principles of Optics: Electromagnetic Theory of Propagation, Interference and Diffraction of Light (CUP Archive, 1999. ,
DOI : 10.1017/CBO9781139644181
How can a particle absorb more than the light incident on it?, American Journal of Physics, vol.51, issue.4, 1983. ,
DOI : 10.1119/1.13262
The shape of field emitters and the ion trajectories in three-dimensional atom probes, Journal of Microscopy, vol.196, issue.3, 1999. ,
DOI : 10.1046/j.1365-2818.1999.00637.x
Influence of shank profile on laser heating of a field emitter, Journal of Applied Physics, vol.57, issue.7, 1985. ,
DOI : 10.1063/1.335453
Physique de l'évaporation par effet de champ du silicium sous éclairement Laser ultra court: application à la sonde atomique, 2008. ,
« Laser assisted field evaporation of oxides in atom probe analysis », Ultramicroscopy, Special Issue: 52nd International Field Emission Symposium, 2011. ,
Some aspects of the silicon behaviour under femtosecond pulsed laser field evaporation, Proceedings of the 50th International Field Emission Symposium & the 19th International Vacuum Nanoelectronics Conference, 2007. ,
DOI : 10.1016/j.ultramic.2007.02.027
Evidence of field evaporation assisted by nonlinear optical rectification induced by ultrafast laser, Physical Review B, vol.73, issue.16, 2006. ,
DOI : 10.1103/PhysRevB.73.165416
« Evaporation mechanisms of MgO in laser assisted atom probe tomography », Ultramicroscopy, Special Issue: 52nd International Field Emission Symposium, ) and 300°K », Physical Review 99, 2011. ,
On the Field Evaporation Behavior of Dielectric Materials in Three-Dimensional Atom Probe: A Numeric Simulation, Microscopy and Microanalysis, vol.6, issue.01, p.1, 2011. ,
DOI : 10.1017/S1431927610093888
A model to predict image formation in Atom probeTomography, Ultramicroscopy, vol.132, p.132, 2013. ,
DOI : 10.1016/j.ultramic.2012.12.007
« Ultrafast Laser-Triggered Field Ion Emission from Semiconductor Tips, New Journal of Physics, vol.14, issue.11, 2012. ,
Field ion microscopy and pulsed laser atom???probe mass spectroscopy of insulating glasses, Journal of Applied Physics, vol.53, issue.9, 1982. ,
DOI : 10.1063/1.331509
Analysis of Bulk Dielectrics with Atom Probe Tomography, Microscopy and Microanalysis, vol.14, issue.S2, p.2, 2008. ,
DOI : 10.1017/S1431927608083657
Field penetration and band bending near semiconductor surfaces in high electric fields, Surface Science, vol.81, issue.1 ,
DOI : 10.1016/0039-6028(79)90503-X
« Mechanism of laser assisted field evaporation from insulating oxides », Ultramicroscopy, Special Issue: 52nd International Field Emission Symposium, 2011. ,
A perfectly matched layer for the absorption of electromagnetic waves, Journal of Computational Physics, vol.114, issue.2, 1994. ,
DOI : 10.1006/jcph.1994.1159
Three-dimensional thermal response of a metal subwavelength tip under femtosecond laser illumination, Physical Review B, vol.84, issue.3, 2011. ,
DOI : 10.1103/PhysRevB.84.033405
Ionization of Field-Evaporated Ions, Physical Review Letters, vol.44, p.23, 1980. ,
In-situ observation of non-hemispherical tip shape formation during laser-assisted atom probe tomography, Journal of Applied Physics, vol.109, issue.10, p.10, 2011. ,
DOI : 10.1063/1.3592339
Ionization of Field-Evaporated Ions ,
Spatial Resolution in Atom Probe Tomography, Microscopy and Microanalysis, vol.10, issue.01, p.1, 2010. ,
DOI : 10.1063/1.1139794
URL : https://hal.archives-ouvertes.fr/hal-00591219
Physique de l'évaporation par effet de champ du silicium sous éclairement Laser ultra court: application à la sonde atomique, 2008. ,
Surface carrier recombination of a silicon tip under high electric field, Applied Physics Letters, vol.97, issue.7, 2010. ,
DOI : 10.1063/1.3473816
Spatial Resolution in Atom Probe Tomography, Microscopy and Microanalysis, vol.10, issue.01, p.1, 2010. ,
DOI : 10.1063/1.1139794
URL : https://hal.archives-ouvertes.fr/hal-00591219
« Intrinsic Optical Absorption in Single-Crystal Germanium and Silicon at 77°K and 300°K », Physical Review 99 ,
« Evaporation mechanisms of MgO in laser assisted atom probe tomography », Ultramicroscopy, Special Issue: 52nd International Field Emission Symposium, 2011. ,
In-situ observation of non-hemispherical tip shape formation during laser-assisted atom probe tomography, Journal of Applied Physics, vol.109, issue.10, p.10, 2011. ,
DOI : 10.1063/1.3592339
Light absorption in conical silicon particles, Optics Express, vol.21, issue.3, 2013. ,
DOI : 10.1364/OE.21.003891
The heat capacity of pure silicon and germanium and properties of their vibrational frequency spectra, Philosophical Magazine, vol.41, issue.39, p.39, 1959. ,
DOI : 10.1080/14786435908233340
« Ultrafast Laser-Triggered Field Ion Emission from Semiconductor Tips, New Journal of Physics, vol.14, issue.11, 2012. ,
« Laser pulsing of field evaporation in atom probe tomography », Current Opinion in Solid State and Materials Science 18, 2014. ,
Field evaporation mechanism of bulk oxides under ultra fast laser illumination, Journal of Applied Physics, vol.110, issue.4, 2011. ,
DOI : 10.1063/1.3610523
Numerical study of femtosecond laser-assisted atom probe tomography, Applied Physics A, vol.4, issue.3, 2013. ,
DOI : 10.1007/s00339-012-7189-7
URL : https://hal.archives-ouvertes.fr/ujm-00710834
« Mechanism of laser assisted field evaporation from insulating oxides », Ultramicroscopy, Special Issue: 52nd International Field Emission Symposium, 2011. ,
Do Dielectric Nanostructures Turn Metallic in High-Electric dc Fields?, Nano Letters, vol.14, issue.11 ,
DOI : 10.1021/nl502715s
Current runaway in insulators affected by impact ionization and recombination, Journal of Applied Physics, vol.47, issue.10, p.10, 1976. ,
DOI : 10.1063/1.322440
Field evaporation of oxides: A theoretical study, Ultramicroscopy, vol.132, p.132, 2013. ,
DOI : 10.1016/j.ultramic.2012.10.007
Néanmoins la contribution du band-bending à la diminution de la résolution en masse ne peut elle pas être réduite car intrinsèque à notre matériau ,
« Laser assisted field evaporation of oxides in atom probe analysis », Ultramicroscopy, Special Issue: 52nd International Field Emission Symposium, 2011. ,
« Mechanism of laser assisted field evaporation from insulating oxides », Ultramicroscopy, Special Issue: 52nd International Field Emission Symposium, 2011. ,
« Pulsed laser induced photoconductivity in II?VI crystal: ZnSe », Solid State Communications 68, 1988. ,
Methods for a precision measurement of ionic masses and appearance energies using the pulsed???laser time???of???flight atom probe, Review of Scientific Instruments, vol.55, issue.8, 1984. ,
DOI : 10.1063/1.1137930
« Ultrafast Laser-Triggered Field Ion Emission from Semiconductor Tips, New Journal of Physics, vol.14, issue.11, 2012. ,
Current runaway in insulators affected by impact ionization and recombination, Journal of Applied Physics, vol.47, issue.10, p.10, 1976. ,
DOI : 10.1063/1.322440
Field penetration and band bending near semiconductor surfaces in high electric fields, Surface Science, vol.81, issue.1 ,
DOI : 10.1016/0039-6028(79)90503-X
« Energy deficit of pulsed-laser field-ionized and field-emitted ions from non-metallic nanotips », Journal of Applied Physics, vol.115, p.20, 2014. ,
Some aspects of the silicon behaviour under femtosecond pulsed laser field evaporation, Proceedings of the 50th International Field Emission Symposium & the 19th International Vacuum Nanoelectronics Conference, 2007. ,
DOI : 10.1016/j.ultramic.2007.02.027
Photoillumination effect on silicon field ion microscopy, Journal of Vacuum Science and Technology, vol.16, issue.2, 1979. ,
DOI : 10.1116/1.570016
Atom-Probe Field Ion Microscopy: Field Ion Emission, and Surfaces and Interfaces at Atomic Resolution, 2005. ,
« Modelling of minority-carrier transport in heavily doped silicon emitters », Solid-State Electronics 30, 1987. ,
Study of vertical Si/SiO2 interface using laser-assisted atom probe tomography and transmission electron microscopy, Micron, vol.58, p.58, 2014. ,
DOI : 10.1016/j.micron.2013.11.003
In situ site-specific specimen preparation for atom probe tomography, Ultramicroscopy, vol.107, issue.2-3, 2007. ,
DOI : 10.1016/j.ultramic.2006.06.008