London Stock Exchange Group Annual Report Managing and Mining Sensor Data Connected objects and the Internet of things ? A paradigm shift, 2009 International Conference on Photonics in Switching, pp.383-428, 2009. ,
The Quantified Self: Fundamental Disruption in Big Data Science and Biological Discovery Cramming more components onto integrated circuits, Biotechnology: DIY biology. Nature Big Data, vol.472, issue.1 2 19, pp.167-85, 1965. ,
Progress In Digital Integrated Electronics Executive Summary, Impact de l'environnement du diélectrique sur les performances du transistor pour les noeuds technologiques de 32 nm à 14 nm, pp.11-13, 1975. ,
Dense SiOC cap for damage-less ultra low k integration with direct CMP in C45 architecture and beyond, Microelectronic Engineering, vol.85, issue.10, pp.2098-2101, 2008. ,
DOI : 10.1016/j.mee.2008.04.043
URL : https://hal.archives-ouvertes.fr/hal-00466362
32nm node BEOL integration with an extreme low-k porous SiOCH dielectric k=2.3, Microelectronic Engineering, vol.87, issue.3, pp.316-320, 2010. ,
DOI : 10.1016/j.mee.2009.07.008
Optimization of porous ultra low-? dielectrics (?? 2.55) for 28nm generation, IITC, 2011. ,
Challenges of gate-dielectric scaling, including the vertical replacement-gate MOSFET, AIP Conference Proceedings, pp.97-104, 2001. ,
DOI : 10.1063/1.1354379
Low-k Materials: Recent Advances, " in Advanced Interconnects for ULSI Technology, 2012. ,
300 mm Multi Level Air Gap Integration for Edge Interconnect Technologies and Specific High Performance Applications, International Interconnect Technology Conference, pp.196-198, 2008. ,
URL : https://hal.archives-ouvertes.fr/hal-00398957
Low dielectric constant materials for microelectronics, Journal of Applied Physics, vol.93, issue.11, p.8793, 2003. ,
DOI : 10.1063/1.1567460
Quantification of processing damage in porous low dielectric constant films, Microelectronic Engineering, vol.83, issue.11-12, pp.11-12, 2006. ,
DOI : 10.1016/j.mee.2006.10.019
Intégration et caractérisation de diélectriques poreux à très basse permittivité pour les interconnexions des circuits cmos sub-45nm, 2008. ,
Porous low dielectric constant materials for microelectronics, Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences, vol.87, issue.2, pp.201-215, 2006. ,
DOI : 10.1021/la035384w
Structural evolution of nano-porous ultra-low-k dielectrics under broadband UV curing, Adv. Met. Conf. Proc, pp.489-494, 2007. ,
Supercritical CO2/co-solvent extraction of porogens and surfactant templates to obtain ultralow dielectric constant films, Thin Solid Films, vol.516, issue.15, pp.4733-4741, 2008. ,
DOI : 10.1016/j.tsf.2007.08.099
Etude d'un matériau diélectrique poreux de type SiOCH. Effet des posttraitements plasma et de nettoyage et intégration, thèse de doctorat Université Montpellier 2, 2007. ,
Effect of plasma treatments on a porous low-k material ??? Study of pore sealing, Microporous and Mesoporous Materials, vol.106, issue.1-3, pp.1-3, 2007. ,
DOI : 10.1016/j.micromeso.2007.02.009
Porosity and structure evolution of a SiOCH low k material during post-etch cleaning process, Microelectronic Engineering, vol.84, issue.11, pp.2600-2605, 2007. ,
DOI : 10.1016/j.mee.2007.07.001
URL : https://hal.archives-ouvertes.fr/hal-00202919
Traitements plasmas post gravure pour l ' intégration des matériaux SiOCH poreux dans les interconnexions en microélectronique, 2009. ,
Analysis of the impact of different additives during etch processes of dense and porous low-k with OES and QMS, Microelectronic Engineering, vol.87, issue.3, pp.337-342, 2010. ,
DOI : 10.1016/j.mee.2009.08.004
Impact of patterning and ashing on electrical properties and reliability of interconnects in a porous SiOCH ultra low-k dielectric material, Microelectronic Engineering, vol.82, issue.3-4, pp.3-4, 2005. ,
DOI : 10.1016/j.mee.2005.07.015
Surface and near-surface modifications of ultralow dielectric constant materials exposed to plasmas under sidewall-like conditions, Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, vol.28, issue.6, p.1104, 2010. ,
DOI : 10.1116/1.3499271
Les Procédés par Plasmas Impliqués dans l ' Intégration des Matériaux SiOCH Poreux pour les Interconnexions en Microélectronique, 2007. ,
Oxygen radical and plasma damage of low-k organosilicate glass materials: Diffusion-controlled mechanism for carbon depletion, Journal of Applied Physics, vol.106, issue.1, pp.1331-013311, 2009. ,
DOI : 10.1063/1.3168428
Residue growth on metallic hard mask after dielectric etching in fluorocarbon based plasmas. II. Solutions, Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, vol.29, issue.1, p.11018, 2011. ,
DOI : 10.1116/1.3527073
URL : https://hal.archives-ouvertes.fr/hal-00625286
Effects of vacuum ultraviolet radiation on deposited and ultraviolet-cured low-k porous organosilicate glass, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.29, issue.3, p.30602, 2011. ,
DOI : 10.1116/1.3570818
Effect of vacuum ultraviolet and ultraviolet irradiation on mobile charges in the bandgap of low-k-porous organosilicate dielectrics, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.29, issue.1, p.10601, 2011. ,
DOI : 10.1116/1.3520433
Post-Etch Cleaning Chemistries Evaluation for Low k-Copper Integration, Solid State Phenomena, vol.92, pp.263-266, 2003. ,
DOI : 10.4028/www.scientific.net/SSP.92.263
Etching Mechanism of Vitreous Silicon Dioxide in HF-Based Solutions, Journal of the American Chemical Society, vol.122, issue.18, pp.4345-4351, 2000. ,
DOI : 10.1021/ja993803z
UV cure impact on robust low-k with sub-nm pores and high carbon content for high performance Cu/low-k BEOL modules, 2013 IEEE International Interconnect Technology Conference, IITC, pp.1-3, 2013. ,
DOI : 10.1109/IITC.2013.6615590
Copper in organic acid based cleaning solutions, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.24, issue.5, p.2467, 2006. ,
DOI : 10.1116/1.2335866
Study of the post-etch cleaning compatibility with dense and porous ULK materials ??? characterization of the process impact, Microelectronic Engineering, vol.83, issue.11-12, pp.11-12, 2006. ,
DOI : 10.1016/j.mee.2006.10.025
Etude de traitements de restauration et d'architectures alternatives pour l'intégration des matériaux diélectriques SiOCH poreux dans les interconnexions en microélectronique, 2010. ,
Effects of chemical mechanical polishing on a porous SiCOH dielectric, Microelectronic Engineering, vol.91, pp.82-88, 2012. ,
DOI : 10.1016/j.mee.2011.08.005
Impact of the CMP process on the electrical properties of ultra low k porous SiOCH, Microelectronic Engineering, vol.87, issue.3, pp.333-336, 2010. ,
DOI : 10.1016/j.mee.2009.07.029
URL : https://hal.archives-ouvertes.fr/hal-00626789
Evaluation des performances isolantes de couches poreuses de SiOCH et de polymères destinés aux technologies d ' intégration innovantes, thèse de doctorat G2Elab, 2011. ,
Challenges of back end of the line for sub 65 nm generation, Microelectronic Engineering, vol.70, issue.2-4, pp.2-4, 2003. ,
DOI : 10.1016/S0167-9317(03)00467-2
Porous low k pore sealing process study for 65 nm and below technologies, Proceedings of the IEEE 2003 International Interconnect Technology Conference (Cat. No.03TH8695), pp.245-247 ,
DOI : 10.1109/IITC.2003.1219766
Investigation of physical and chemical property changes of ultra low-?? SiOCH in aspect of cleaning and chemical repair processes, Microelectronic Engineering, vol.87, issue.3, pp.457-461, 2010. ,
DOI : 10.1016/j.mee.2009.06.028
Efficiency of reducing and oxidizing ash plasmas in preventing metallic barrier diffusion into porous SiOCH, Microelectronic Engineering, vol.85, issue.8, pp.1842-1849, 2008. ,
DOI : 10.1016/j.mee.2008.05.028
URL : https://hal.archives-ouvertes.fr/hal-00387514
Improving mechanical robustness of ultralow-k SiOCH plasma enhanced chemical vapor deposition glasses by controlled porogen decomposition prior to UV-hardening, Journal of Applied Physics, vol.107, issue.10, p.104122, 2010. ,
DOI : 10.1063/1.3428958
plasma treatment, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.29, issue.5, p.51305, 2011. ,
DOI : 10.1116/1.3626534
Mechanism of k-value Reduction of PECVD Low-k Films Treated with He / H2 Ash Plasma, PESM, pp.4-5, 2010. ,
Plasma processing of low-k dielectrics, Journal of Applied Physics, vol.113, issue.4, p.41101, 2013. ,
DOI : 10.1063/1.4765297
Silylation Using a Supercritical Carbon Dioxide Medium to Repair Plasma-Damaged Porous Organosilicate Films, Electrochemical and Solid-State Letters, vol.7, issue.12, pp.338-341, 2004. ,
DOI : 10.1149/1.1819876
Rapid repair of plasma ash damage in low-k dielectrics using supercritical CO[sub 2], Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.22, issue.3, pp.1-12, 2004. ,
DOI : 10.1116/1.1755220
Silylation of porous methylsilsesquioxane films in supercritical carbon dioxide, Microelectronic Engineering, vol.76, issue.1-4, pp.52-59, 2004. ,
DOI : 10.1016/j.mee.2004.07.028
Repair and capping of porous MSQ films using chlorosilanes and supercritical CO 2, Microelectronic Engineering, pp.349-352, 2005. ,
The restoration of porous methylsilsesquioxane (p-MSQ) films using trimethylhalosilanes dissolved in supercritical carbon dioxide, Microelectronic Engineering, vol.82, issue.3-4, pp.3-4, 2005. ,
DOI : 10.1016/j.mee.2005.07.027
Repair of plasma-damaged p-SiOCH dielectric films in supercritical CO2, Microelectronic Engineering, vol.87, issue.9, pp.1680-1684, 2010. ,
DOI : 10.1016/j.mee.2009.11.049
Spectroscopic Ellipsometry Analysis of Nanoporous Low Dielectric Constant Films Processed via Supercritical CO2 for Next-generation Microelectronic Devices, 2007. ,
Sidewall restoration of porous ultra low-k dielectrics for sub-45nm technology nodes, Microelectron. Eng, vol.84, issue.11, pp.2595-2599, 2007. ,
Electrical property improvements of ultra low-k ILD using a silylation process feasible for process integration, IEEE, vol.1, pp.1-3, 2011. ,
Internal Repair for Plasma Damaged Lowk Films by Methylating Chemical Vapor, Jpn. J. Appl. Phys, vol.50, issue.5, pp.1-22, 2011. ,
Restoration and pore sealing of plasma damaged porous organosilicate low k dielectrics with phenyl containing agents, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.25, issue.3, p.906, 2007. ,
DOI : 10.1116/1.2738489
Characterization and chemical recovery of plasma damaged porous low-k SiOCH dielectric for the semiconductor industry, 2012. ,
Texture des matériaux pulvérulents, dans Analyses de surface et de matériaux, Techniques de l'ingénieur, 2003. ,
Liquid intrusion and alternative methods for the characterization of macroporous materials, IUPAC Technical Report) Pure Appl. Chem, vol.84, issue.1, pp.107-136, 2012. ,
Reporting physisorption data for gas/solid systems with special reference to the determination of surface area and porosity (Provisional), Pure and Applied Chemistry, vol.54, issue.11, pp.603-619, 1984. ,
DOI : 10.1351/pac198254112201
Adsorption et Condensation de Fluides Simples dans le Silicium Mésoporeux : Une Approche Expérimentale et par Simulation Monte Carlo, 2003. ,
Influence of elastic deformation of porous materials in adsorption-desorption process: A thermodynamic approach, Physical Review B, vol.78, issue.8, pp.1-12, 2008. ,
DOI : 10.1103/PhysRevB.78.085433
URL : https://hal.archives-ouvertes.fr/hal-00316163
Techniques innovantes pour la caractérisation microstructurale de couches minces, 2006. ,
Ellipsométrie UV appliquée aux high-k, 2009. ,
Sorption and structure of active carbons. I. Adsorption of organic vapors, Zhurnal Fiz. Khimii, 1947. ,
Physical Adsorption of Gases and Vapors in Micropores, Prog. Surf. Membr. Sci. vol, vol.9, pp.1-70, 1975. ,
DOI : 10.1016/B978-0-12-571809-7.50006-1
Theoretical Basis for the Potential Theory Adsorption Isotherms. The Dubinin-Radushkevich and Dubinin-Astakhov Equations, Langmuir, vol.10, issue.11, pp.4244-4249, 1994. ,
DOI : 10.1021/la00023a054
Heats of adsorption from the Dubinin-Astakhov model applied to??the characterization of pillared interlayered clays (PILCs), Adsorption, vol.298, issue.2, pp.287-292, 2010. ,
DOI : 10.1007/s10450-010-9283-5
Method for the calculation of effective pore size distribution in molecular sieve carbon., Journal of Chemical Engineering of Japan, vol.16, issue.6, pp.470-475, 1983. ,
DOI : 10.1252/jcej.16.470
Curvature and parametric sensitivity in models for adsorption in micropores, AIChE Journal, vol.37, issue.3, pp.429-436, 1991. ,
DOI : 10.1002/aic.690370312
High-resolution nitrogen and argon adsorption on ZSM-5 zeolites: effects of cation exchange and ratio, Microporous Materials, vol.3, issue.4-5, pp.4-5, 1995. ,
DOI : 10.1016/0927-6513(94)00064-3
Improved Horvath???Kawazoe equations including spherical pore models for calculating micropore size distribution, Chemical Engineering Science, vol.49, issue.16, pp.2599-2609, 1994. ,
DOI : 10.1016/0009-2509(94)E0054-T
Characterization of Porous Solids and Powders: Surface Area, Pore Size and Density, p.347, 2004. ,
DOI : 10.1007/978-1-4020-2303-3
Investigations of a complete pore structure analysis, Journal of Colloid and Interface Science, vol.26, issue.1, pp.54-61, 1968. ,
DOI : 10.1016/0021-9797(68)90271-3
Pore structure analysis by water vapor adsorption, Journal of Colloid and Interface Science, vol.29, issue.3, pp.485-491, 1969. ,
DOI : 10.1016/0021-9797(69)90132-5
Studies on pore systems in catalysts VIII. The adsorption of krypton and of nitrogen on graphitized carbon, J. Catal, vol.7, issue.2, pp.485-491, 1967. ,
Determination of Pore Size Distribution of Mesoporous and Macroporous Silicas by Means of Benzene-Desorption Isotherms, Journal of Colloid and Interface Science, vol.165, issue.2, pp.532-535, 1994. ,
DOI : 10.1006/jcis.1994.1260
Investigation on the t-curves of organic molecules as applied to porous solids, Egypt. J. Chem, vol.19, issue.3, pp.405-415, 1976. ,
Physical and chemical aspects of adsorbents and catalyst, p.650, 1970. ,
Powder Surface Area and Porosity, Seconde édition, Chapman an, 1984. ,
Data reduction practice in X-ray reflectometry, Journal of Applied Crystallography, vol.40, issue.5, pp.813-819, 2007. ,
DOI : 10.1107/S0021889807030403
A comparison of modern data analysis methods for X-ray and neutron specular reflectivity data, Journal of Applied Crystallography, vol.40, issue.5, pp.820-833, 2007. ,
DOI : 10.1107/S0021889807032207
URL : https://hal.archives-ouvertes.fr/hal-00170057
Diffusion, diffraction, réflectométrie et fluorescence de rayons-X à la PAC ,
Pore Characterization in Low-k Dielectric Films Using X-ray Reflectivity: X-ray Porosimetry, 2004. ,
Three characterization techniques coupled with adsorption for studying the nanoporosity of supported films and membranes, Microporous and Mesoporous Materials, vol.111, issue.1-3, pp.1-3, 2008. ,
DOI : 10.1016/j.micromeso.2007.08.033
URL : https://hal.archives-ouvertes.fr/hal-00273915
Study of solvent penetration inside a porous low k material by neutron reflectometry ??? Influence of material surface modifications and of solvent properties, Microelectronic Engineering, vol.85, issue.10, pp.2089-2093, 2008. ,
DOI : 10.1016/j.mee.2008.03.010
Pore characterization of ultralow-k dielectric thin films using positronium annihilation spectroscopy, 2008. ,
The Theory of Positrons, Physical Review, vol.76, issue.6, pp.749-759, 1949. ,
DOI : 10.1103/PhysRev.76.749
Principles and Applications of Positron & Positronium Chemistry, p.406, 2002. ,
DOI : 10.1142/5086
thin films using positron annihilation lifetime spectroscopy, Journal of Applied Physics, vol.89, issue.9, p.5138, 2001. ,
DOI : 10.1063/1.1360704
Structure- Modification Model of Porogen-Based Porous SiOC Film with Ultraviolet Curing, Jpn. J. Appl. Phys, vol.50, issue.5, pp.5-06, 2011. ,
Damage characterization of low-k layers through Cu damascene process using monoenergetic positron beams, 2010 IEEE International Interconnect Technology Conference, pp.9-11, 2010. ,
DOI : 10.1109/IITC.2010.5510696
Positron Annihilation in Semiconductors: Defect Studies, p.383, 1999. ,
DOI : 10.1007/978-3-662-03893-2
Positronium Annihilation in Molecular Substances, The Journal of Chemical Physics, vol.56, issue.11, p.5499, 1972. ,
DOI : 10.1063/1.1677067
The temperature dependence of positron lifetimes in solid pivalic acid, Chemical Physics, vol.63, issue.1-2, pp.51-58, 1981. ,
DOI : 10.1016/0301-0104(81)80307-2
Probing Pore Characteristics in Low-K Thin Films Using Positronium Annihilation Lifetime Spectroscopy, MRS Proceedings, vol.103, pp.1-11, 2000. ,
DOI : 10.1063/1.1677067
Probing surface and interface morphology with Grazing Incidence Small Angle X-Ray Scattering, Surface Science Reports, vol.64, issue.8, pp.255-380, 2009. ,
DOI : 10.1016/j.surfrep.2009.07.002
URL : https://hal.archives-ouvertes.fr/hal-01442842
Mémoire de Diplôme de Recherche Technologique : Développement d'une méthode de mesures de porosité pour les échantillons de la microélectronique : la diffusion des rayons X aux petits angles en incidence rasante, Grenoble, 2004. ,
Quantitative SAXS Analysis of the P123/Water/Ethanol Ternary Phase Diagram, The Journal of Physical Chemistry B, vol.110, issue.31, pp.15157-65, 2006. ,
DOI : 10.1021/jp062159p
Scatterometric porosimetry: A new characterization technique for porous material patterned structures, Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena, vol.28, issue.4, p.31, 2010. ,
DOI : 10.1116/1.3457489
URL : https://hal.archives-ouvertes.fr/hal-00623446
Application of scatterometric porosimetry to characterize porous ultra low-k patterned layers, Thin Solid Films, vol.519, issue.9, pp.2825-2829, 2011. ,
DOI : 10.1016/j.tsf.2010.12.114
URL : https://hal.archives-ouvertes.fr/hal-00647414
Caractérisation de structures de matériaux poreux à faible constante diélectrique par porosimétrie scatterométrique, 2013. ,
A Mathematical Theory of Communication, Bell System Technical Journal, vol.27, issue.3, pp.379-423, 1948. ,
DOI : 10.1002/j.1538-7305.1948.tb01338.x
The interaction of gases with solid surfaces, Pergamon P, p.349, 1974. ,
Ueber das Gesetz der Energieverteilung im Normalspectrum, Annalen der Physik, vol.2, issue.3, pp.553-563, 1901. ,
DOI : 10.1002/andp.19013090310
Elementary principles in statistical mechanics developed with especial reference to the rational foundation of thermodynamics, 1902. ,
DOI : 10.5962/bhl.title.32624
Foundations of statistical mechanics, p.380, 1987. ,
Nobel Lecture: Electronic structure of matter???wave functions and density functionals, Reviews of Modern Physics, vol.71, issue.5, 1999. ,
DOI : 10.1103/RevModPhys.71.1253
Equation of State Calculations by Fast Computing Machines, The Journal of Chemical Physics, vol.21, issue.6, p.1087, 1953. ,
DOI : 10.1063/1.1699114
Interaction Models for Water in Relation to Protein Hydration, Intermolecular Forces, B. Pullman, Ed. Reidel, pp.331-342, 1981. ,
DOI : 10.1007/978-94-015-7658-1_21
Molecular simulation of water along the liquid???vapor coexistence curve from 25?????C to the critical point, The Journal of Chemical Physics, vol.93, issue.10, p.7355, 1990. ,
DOI : 10.1063/1.459409
H NMR Spectroscopic Data and Molecular Simulation Results, The Journal of Physical Chemistry B, vol.111, issue.33, pp.9871-9878, 2007. ,
DOI : 10.1021/jp0720338
Development and Testing of the OPLS All-Atom Force Field on Conformational Energetics and Properties of Organic Liquids, Journal of the American Chemical Society, vol.118, issue.45, pp.11225-11236, 1996. ,
DOI : 10.1021/ja9621760
Carlo Simulations with Biased Insertions L -m, pp.13742-13752, 1993. ,
Ueber die Anwendung des Satzes vom Virial in der kinetischen Theorie der Gase, Annalen der Physik, vol.12, issue.1, pp.127-136 ,
DOI : 10.1002/andp.18812480110
Sur le mélange des gaz Comptes rendus l, Académie des Sci, 1889. ,
Ultraviolet-Assisted Curing of Polycrystalline Pure-Silica Zeolites:?? Hydrophobization, Functionalization, and Cross-Linking of Grains, Journal of the American Chemical Society, vol.129, issue.30, pp.9288-9297, 2007. ,
DOI : 10.1021/ja0723737
Caractérisation microstructurale des matériaux : Analyse par les rayonnements X et électronique, p.579, 2011. ,
Adsorption of Gases in Multimolecular Layers, Journal of the American Chemical Society, vol.60, issue.2, pp.309-319, 1938. ,
DOI : 10.1021/ja01269a023
Physical Adsorption on Non???Uniform Surfaces, The Journal of Chemical Physics, vol.16, issue.10, p.931, 1948. ,
DOI : 10.1063/1.1746689
Theory of Physical Adsorption, Adv. Catal, vol.4, pp.211-258, 1952. ,
DOI : 10.1016/S0360-0564(08)60615-X
Chemical Analysis, Modern Instrumentation Methods and Techniques, 2007. ,
Infrared absorption spectroscopy, 1977. ,
Improved characterization of Fourier transform infrared spectra analysis for post-etched ultra-low-?? SiOCH dielectric using chemometric methods, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.27, issue.1, p.521, 2009. ,
DOI : 10.1116/1.3043466
Multiple internal reflection infrared spectroscopy using two-prism coupling geometry: A convenient way for quantitative study of organic contamination on silicon wafers, Applied Physics Letters, vol.77, issue.14, pp.2249-2251, 2000. ,
DOI : 10.1063/1.1314885
Multiple internal reflection spectroscopy: a sensitive non-destructive probe for interfaces and nanometric layers, Materials Science in Semiconductor Processing, vol.4, issue.1-3 ,
DOI : 10.1016/S1369-8001(00)00167-0
Internal Reflection and ATR Spectroscopy, Applied Spectroscopy Reviews, vol.24, issue.3, pp.365-384, 2004. ,
DOI : 10.1366/0003702834634776
Structure of low dielectric constant to extreme low dielectric constant SiCOH films: Fourier transform infrared spectroscopy characterization, Journal of Applied Physics, vol.94, issue.10, p.6697, 2003. ,
DOI : 10.1063/1.1618358
Adiabatic passage Hartmann-Hahn cross polarization in NMR under magic angle sample spinning, Chemical Physics Letters, vol.240, issue.5-6, pp.449-456, 1995. ,
DOI : 10.1016/0009-2614(95)00505-X
CRC Handbook of Chemistry and Physics, Handb. Chem. Phys, vol.53, p.2616, 2003. ,
Crosslinking of porous SiOCH films involving Si???O???C bonds: Impact of deposition and curing, Journal of Applied Physics, vol.108, issue.12, p.124105, 2010. ,
DOI : 10.1063/1.3518512
URL : https://hal.archives-ouvertes.fr/hal-00609945
Heteronuclear chemical-shift correlations of silanol groups studied by two-dimensional cross-polarization magic angle spinning NMR, Journal of the American Chemical Society, vol.110, issue.4, pp.1049-1054, 1988. ,
DOI : 10.1021/ja00212a008
Frequency-switched pulse sequences: Homonuclear decoupling and dilute spin NMR in solids, Chemical Physics Letters, vol.155, issue.4-5, pp.4-5, 1989. ,
DOI : 10.1016/0009-2614(89)87166-0
Development and application of the Ghent pulsed positron beam, Appl. Surf. Sci, vol.194, issue.14, pp.52-55, 2002. ,
The Properties of Solvents, 1999. ,
Structural study of nanoporous ultra low-k dielectrics using complementary techniques: Ellipsometric porosimetry, X-ray reflectivity and grazing incidence small-angle X-ray scattering, Applied Surface Science, vol.254, issue.2, pp.473-479, 2007. ,
DOI : 10.1016/j.apsusc.2007.06.043
URL : https://hal.archives-ouvertes.fr/hal-00206321
(0001) studied by grazing-incidence small-angle X-ray scattering, Journal of Applied Crystallography, vol.346, issue.6, pp.1173-1181, 2011. ,
DOI : 10.1107/S002188981104115X
URL : https://hal.archives-ouvertes.fr/hal-00664724
The DL_POLY Classic User Manual, Version 1.0., STFC Dares, 2010. ,
New fitting scheme to obtain effective potential from Car-Parrinello molecular-dynamics simulations: Application to silica, EPL (Europhysics Letters), vol.82, issue.1, p.17001, 2008. ,
DOI : 10.1209/0295-5075/82/17001
Polymer Materials: Macroscopic Properties and Molecular Interpretations (Google eBook), p.432, 2011. ,
Computer Simulation and the Statistical Mechanics of Adsorption, Academic P, 1982. ,
Self-assembled monolayers on silicon oxide, physica status solidi (c), vol.7, issue.2, pp.227-231, 2010. ,
DOI : 10.1002/pssc.200982471
Ultralow k using a plasma enhanced chemical vapor deposition porogen approach: Matrix structure and porogen loading influences, Journal of Applied Physics, vol.102, issue.6, p.64107, 2007. ,
DOI : 10.1063/1.2783963
Infrared, Raman and Ultraviolet Spectroscopy, Analysis of Silicones, 1974. ,
Spin-coated and PECVD low dielectric constant porous organosilicate films studied by 1D and 2D solid-state NMR, Physical Chemistry Chemical Physics, vol.25, issue.42, p.9729, 2009. ,
DOI : 10.1039/b909654j
A Highly Diastereomerically Enriched, Silyl-Substituted Alkyl Lithium, Configurationally Stable at Room Temperature, Angewandte Chemie International Edition, vol.43, issue.20, pp.3136-3139, 2005. ,
DOI : 10.1002/anie.200462141
Comprehensive Chemistry Designs in Porous SiOCH Film Stacks and Plasma Etching Gases for Damageless Cu Interconnects in Advanced ULSI Devices, IEEE Transactions on Semiconductor Manufacturing, vol.21, issue.3, pp.469-480, 2008. ,
DOI : 10.1109/TSM.2008.2001225
Chemical Bonding Structure of Low Dielectric Constant Si:O:C:H Films Characterized by Solid-State NMR, Journal of The Electrochemical Society, vol.152, issue.1, p.7, 2005. ,
DOI : 10.1149/1.1830353
ToF-SIMS spectra multivariate analyses for the chemical characterization of microelectronic low-k materials, Surface and Interface Analysis, vol.42, issue.S1, 2014. ,
DOI : 10.1002/sia.5533
Infrared characteristic bands of highly dispersed silica, Kolloid-Zeitschrift & Zeitschrift f??r Polymere, vol.44, issue.4, pp.12-16, 1964. ,
DOI : 10.1007/BF01500878
Chemical Repair of Plasma Damaged Porous Ultra Low-?? SiOCH Film Using a Vapor Phase Process, Journal of The Electrochemical Society, vol.157, issue.12, p.1140, 2010. ,
DOI : 10.1149/1.3503596
H Solid-State NMR, Chemistry - A European Journal, vol.14, issue.22, pp.5689-5696, 2004. ,
DOI : 10.1002/chem.200400351
Removal of Plasma-Modified Low-k Layer Using Dilute HF: Influence of Concentration, Electrochemical and Solid-State Letters, vol.8, issue.7, p.21, 2005. ,
DOI : 10.1149/1.1928234
Effect of the dielectric???substrate interface on charge accumulation from vacuum ultraviolet irradiation of low-k porous organosilicate dielectrics, Thin Solid Films, vol.519, issue.16, pp.5464-5466, 2011. ,
DOI : 10.1016/j.tsf.2011.03.010
Charge Trapping within UV and Vacuum UV Irradiated Low-k Porous Organosilicate Dielectrics, Journal of The Electrochemical Society, vol.157, issue.8, p.177, 2010. ,
DOI : 10.1149/1.3435285
Neutron Scattering Study on Dynamics of Water Molecules in MCM-41, The Journal of Physical Chemistry B, vol.103, issue.28, pp.5814-5819, 1999. ,
DOI : 10.1021/jp984136j
Sol-Gel Derived Silica Layers for Low- k Dielectrics Applications, MRS Proceedings, vol.20, pp.5-26, 2000. ,
DOI : 10.1023/A:1026428814961
Intermolecular Potential Function for the Physical Adsorption of Rare Gases in Silicalite, J. Phys. Chem, vol.98, issue.50, pp.13339-13349, 1994. ,
Characterization of Micro-Mesoporous Materials from Nitrogen and Toluene Adsorption:?? Experiment and Modeling, Langmuir, vol.22, issue.2, pp.513-516, 2006. ,
DOI : 10.1021/la052202k
Hydrocarbonsadsorption on templated mesoporous materials: effect of the pore size, geometry and surface chemistry, New J. Chem., vol.44, issue.45, p.407, 2011. ,
DOI : 10.1039/C0NJ00614A
The startling poroelastic behaviour of vitreous silica, 2014. ,
Moisture Effects on the 1/F Noise Of Mos Devices, ECS Transactions, pp.363-377, 2009. ,
DOI : 10.1149/1.3122102
Adsorption of nitrogen , neopentane , n -hexane , benzene and methanol for the evaluation of pore sizes in silica grades of MCM-41, pp.323-337, 2001. ,
In silico screening of carbon-capture materials, Nature Materials, vol.6, issue.7, pp.633-674, 2012. ,
DOI : 10.1038/nmat3336
Calorimetry and Thermal Methods in Catalysis, p.577, 2013. ,
DOI : 10.1007/978-3-642-11954-5
Wetting: statics and dynamics, Rev. Mod. Phys, vol.57, issue.3, 1985. ,
Wetting and spreading, Reviews of Modern Physics, vol.81, issue.2, pp.739-805, 2009. ,
DOI : 10.1103/RevModPhys.81.739
A theory of capillary condensation in the pores of sorbents and of other capillary phenomena taking into account the disjoining action of polymolecular liquid films, Progress in Surface Science, vol.40, issue.1-4, pp.1-4, 1992. ,
DOI : 10.1016/0079-6816(92)90032-D
Theory of Multimolecular Adsorption from a Mixture of Gases, The Journal of Chemical Physics, vol.14, issue.4, p.268, 1946. ,
DOI : 10.1063/1.1724130
Physisorption in nanopores of various sizes and shapes : A Grand Canonical Monte Carlo simulation study, Stud. Surf. Sci. Catal, vol.144, p.35, 2002. ,
DOI : 10.1016/S0167-2991(02)80217-8
Capillary condensation within nanopores of various geometries, Physics Letters A, vol.228, issue.1-2, pp.84-90, 1997. ,
DOI : 10.1016/S0375-9601(97)00070-4
The importance of standard isotherms in the analysis of adsorption isotherms for determining the porous texture of solids, Journal of Colloid and Interface Science, vol.70, issue.2, pp.265-281, 1979. ,
DOI : 10.1016/0021-9797(79)90031-6
Interfacial Forces in Aqueous Media, 2006. ,
Hydrolysis and condensation of silicates: Effects on structure, Journal of Non-Crystalline Solids, vol.100, issue.1-3, pp.1-3, 1988. ,
DOI : 10.1016/0022-3093(88)90005-1
Recommendations for the characterization of porous solids, Pure Appl. Chem, vol.66, issue.8, 1994. ,
Multi-solvent ellipsometric porosimetry analysis of plasma-treated porous SiOCH films, Thin Solid Films, vol.518, issue.18, pp.5140-5145, 2010. ,
DOI : 10.1016/j.tsf.2010.03.015
Adsorption-Induced Deformation of Microporous Carbons: Pore Size Distribution Effect, Langmuir, vol.24, issue.13, pp.6603-6611, 2008. ,
DOI : 10.1021/la800406c
Grazing incidence small angle x-ray scattering study of the structure of nanoporous ultralow-k dielectrics prepared by plasma enhanced chemical vapor deposition, Applied Physics Letters, vol.95, issue.2, p.22901, 2009. ,
DOI : 10.1063/1.3168521
URL : https://hal.archives-ouvertes.fr/hal-00428622
Positronium annihilation and pore surface chemistry in mesoporous silica films, Applied Physics Letters, vol.91, issue.2, p.24102, 2007. ,
DOI : 10.1063/1.2756310
The influence of N containing plasmas on low-k films, Microelectronic Engineering, vol.88, issue.5, pp.627-630, 2011. ,
DOI : 10.1016/j.mee.2010.06.011
Stability of Si-O-F low-K dielectrics: Attack by water molecules as function of near-neighbor Si-F bonding arrangements, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.16, issue.3, p.1525, 1998. ,
DOI : 10.1116/1.581181
Controllable Change of Porosity of 3-Methylsilane Low-k Dielectric Film, Electrochemical and Solid-State Letters, vol.4, issue.1, pp.3-5, 2001. ,
DOI : 10.1149/1.1344283
Modification of Low-K SiCOH Film Porosity by a HF Solution, Solid State Phenomena, vol.76, issue.77, pp.76-77, 2001. ,
DOI : 10.4028/www.scientific.net/SSP.76-77.135
Positron/positronium annihilation as a probe for chemical environments of free volume holes in fluoropolymers, Polymer, vol.47, issue.10, pp.3486-3493, 2006. ,
DOI : 10.1016/j.polymer.2006.03.044
Depth-resolved impact of integration process on porosity and solvent diffusion in a SiOCH low-k material, Journal of Porous Materials, vol.19, issue.3, pp.475-484, 2014. ,
DOI : 10.1007/s10934-014-9794-7
Cryogenic approaches to low-damage patterning of porous low-k films, PESM 2012 Proceedings, 2012. ,
Damage Free Cryogenic Etching of a Porous Organosilica Ultralow-k Film, ECS Solid State Letters, vol.2, issue.2, pp.5-7, 2012. ,
DOI : 10.1149/2.007302ssl
URL : https://hal.archives-ouvertes.fr/hal-00831289
Stability of Si-O-F low-K dielectrics: Attack by water molecules as function of near-neighbor Si-F bonding arrangements, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.16, issue.3, p.1525, 1998. ,
DOI : 10.1116/1.581181
Cryogenic approaches to low-damage patterning of porous low-k films, PESM 2012 Proceedings, 2012. ,
Estimation of the surface free energy of polymers, Journal of Applied Polymer Science, vol.13, issue.8, pp.1740-1747, 1969. ,
DOI : 10.1002/app.1969.070130815
Propriétés de mouillage de surfaces chimiquement hétérogènes, 2007. ,
Effects of plasmas on porous low dielectric constant CVD SiOCH films, Microelectronic Engineering, vol.86, issue.2, pp.176-180, 2009. ,
DOI : 10.1016/j.mee.2008.10.018
En particulier, l'adsorption a lieu à très basse pression partielle (P/P 0 ~ 0,01) pour la silice SiOH, alors que pour la surface méthylée, cette pression partielle est plus élevée (P/P 0 ~ 0,05) Dans le cas de la surface trifluorométhylée, l'adsorption dans le pore a lieu autour de (P/P 0 ~ 0,6), ce qui indique qu'il faut effectivement tenir compte de la nature ,