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Amplification de puissance linéaire à haut rendement en technologie GaN intégrant un contrôle de polarisation de grille

Abstract : This work deals with linear and high efficiency microwave power amplification in GaN technology.The first chapter is dedicated to the general context of wireless telecommunication with a special emphasis on the RF power amplifier. The most representative figures of merit in terms of linearity and power efficiency are introduced.The second chapter deals more specifically with the GaN technology and GaN-based transistor for microwave power amplification. A description of the principal architectures found in the literature related to high efficiency and linear amplification is summarized.In the third chapter, the developed envelope time-domain test bench is presented. Time-synchronization and envelope calibration procedures are discussed. As an illustration, a new specific wideband NPR measurement is presented and experimentally validated.An innovative power amplifier architecture is presented in the fourth chapter. It is based on a specific dynamic gate biasing technique of the power amplifier biased close to the pinch-off point. A 10W GaN S-band demonstrator has been developed. Compared to fixed class-B conditions, a linearity improvement has been reported without any prohibitive efficiency degradation of the RF power amplifier. Finally, an investigation of the proposed technique for the efficiency improvement in the drain envelope tracking technique is proposed.
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https://tel.archives-ouvertes.fr/tel-01089653
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Submitted on : Tuesday, December 2, 2014 - 10:01:09 AM
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  • HAL Id : tel-01089653, version 1

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Pierre Medrel. Amplification de puissance linéaire à haut rendement en technologie GaN intégrant un contrôle de polarisation de grille. Electronique. Université de Limoges, 2014. Français. ⟨NNT : 2014LIMO0006⟩. ⟨tel-01089653⟩

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