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Conception d'un circuit intégré en SiC appliqué aux convertisseur de moyenne puissance

Abstract : The new SiC power switches is able to consider power converters, which could operate in harsh environments as in High Voltage (> 10kV) and High Temperature (> 300 °C). Currently, they are no specific solutions for controlling these devices in harsh environments. The development of elementary functions in SiC is a preliminary step toward the realization of a first demonstrator for these fields of applications. AMPERE laboratory (France) and the National Center of Microelectronic of Barcelona (Spain) have elaborated an elementary electrical compound, which is a lateral dual gate MESFET in Silicon Carbide (SiC). The purpose of this research is to conceive a monolithic power converter and its driver in SiC. The scientific approach has consisted of defining in a first time a SPICE model of the elementary MESFET from electric characterizations (fitting). Analog functions as : comparator, ring oscillator, Schmitt’s trigger . . . have been designed thanks to this SPICE’s model. A device based on a bridge rectifier, a regulated "boost" and its driver has been established and simulated with the SPICE Simulator. The converter has been sized for supplying 2.2 W for an area of 0.27 cm2. This device has been fabricated at CNM of Barcelona on semi-insulating SiC substrate. The electrical characterizations of the lateral compounds (resistors, diodes, MESFETs) checked the design, the "sizing" and the manufacturing process of these elementary devices and analog functions. The experimental results is able to considerer a monolithic driver in Wide Band Gap. The prospects of this research is now to realize a fully integrated power converter in SiC and study its behavior in harsh environments (especially in high temperature > 300 °C). Analysis of degradation mechanisms and reliability of the power converters would be so considerer in the future.
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Submitted on : Sunday, October 26, 2014 - 9:08:17 PM
Last modification on : Monday, September 13, 2021 - 2:44:04 PM
Long-term archiving on: : Tuesday, January 27, 2015 - 10:15:51 AM


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  • HAL Id : tel-01077715, version 1


Jean-François Mogniotte. Conception d'un circuit intégré en SiC appliqué aux convertisseur de moyenne puissance. Electronique. INSA de Lyon, 2014. Français. ⟨NNT : 2014ISAL0004⟩. ⟨tel-01077715⟩



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