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Spin relaxation in doped semiconductors and semiconductor nanostructures

Abstract : In the first part of this thesis we consider a doped GaAs semiconductor and study the spin relaxation on the metallic side of the metal-insulator transition. We take into account two different types of spinorbit coupling, the first of them being associated to the presence of extrinsic impurities, while the other one is the Dresselhaus coupling. To tackle the spin dynamics problem, we develop an analytical formulation based on the spin diffusion of an electron in the metallic regime of conduction of the impurity band. The full derivation provides us with an expression for the spin-relaxation time ,which is free of adjustable parameters. We complement this approach and back our analytical results with the numerical calculation of the spin lifetime.In the second part of the thesis we consider a quantum dot hosted in an InAs nanowire (with awurtzite crystalline structure) and study the effect of spin-orbit coupling on the eigenstates of the zero-dimensional system. We develop here an exact analytical solution for the quantum dot, takinginto account the proper effective spin-orbit coupling for this type of material. We focus on the Dresselhaus coupling, which presents a cubic-in-k term, along with a linear term, characteristic of wurtzite materials. A Zeeman interaction from an external magnetic field is included as well and we compute the effective g-factor as a function of the dot size. Finally, we calculate the spin-relaxation due to acoustic phonons, taking into account the phonon potentials corresponding to the wurtzite structure.
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Submitted on : Monday, September 22, 2014 - 6:39:28 PM
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  • HAL Id : tel-01067064, version 1



Guido Alfredo Intronati. Spin relaxation in doped semiconductors and semiconductor nanostructures. Quantum Physics [quant-ph]. Université de Strasbourg, 2013. English. ⟨NNT : 2013STRAE033⟩. ⟨tel-01067064⟩



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