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R. Ces-deux and . Ont-une, commande complémentaire en mode thyristor-dual pour ?>0 et en mode thyristor-diode pour ?<0. Le raisonnement est fait sur une demi-puce (c.-à-d. T1 +D1) Pour un signal sinusoïdale Ig(t)=Îg sin(?t-?? d'amplitude Îg

T. Sur-une-période, on calcule les pertes moyennes dissipées sur l'intervalle

?. Pertes-moyennes=1 and /. , dt Dans ce calcul, nous allons modéliser la chute de tension VCEsat de l'IGBT par un modèle au premier ordre comprenant une tension de seuil et une résistance pour la zone ohmique: VCEsat= VCE0 +RCE×IC, SN + +SP + ), voir Chapitre 2) On en déduit : ? Les pertes totales dans T1= 1/T]?(VCE0(t)×Ig(t) + RCE×I 2 g(t)). dt =VCE0.<Ig(t)>

A. <ig, -cos(???/2? Et I 2 eff g(t)=Î 2 g(? -1/2sin2??, T1)+ Pertes moy (D1)= [VCE0 (1+cos?) + Vd0(1-cos?)] Ig/2? + [RCE0(?-?+1/2sin2?), pp.0-1
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. Le-dépôt-de-la-couche-de-nitrure, SiN4) d'isolation se fait dans un four de dépôt LPCVD (Low Pressure Chemical Vapour Deposition) à partir de 20cm 3 /mn de dichlorosilane (SiH2Cl2) et de 150cm 3

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