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Physical modelling of impurity diffusion and clustering phenomena in CMOS based image sensors

Zahi Essa 1
1 LAAS-MPN - Équipe Matériaux et Procédés pour la Nanoélectronique
LAAS - Laboratoire d'analyse et d'architecture des systèmes
Abstract : Over the last years, microelectronics growth was made possible thanks to the innovations occurring in CMOS (Complementary Metal Oxide Semiconductor) technology, leading to a constant improvement of device performances. These innovations have to answer the technological challenges related to devices miniaturization, as well as to their continuous diversification. In response to these challenges, modelling approaches such as TCAD (Technology Computer Aided Design) drastically reduce the technologies development time and cost. In this context, the thesis deals with TCAD models development of several physical mechanisms taking place within advanced process steps. In the first part, diffusion and activation mechanisms following high-dose dopant implantation were studied, mainly in the case of plasma implantation, a promising technique for conformal doping in image sensors and Tri- Gates transistors. In high doping conditions, the observation and modelling of large boron interstitial clusters (BICs) were carried out. In the second part, the evaluation of chemical species diffusion and transfer between materials was considered. In particular, Boron dose loss from silicon in spacer stacks and corresponding diffusion in oxide were studied. In addition, lanthanum diffusion evaluation during thermal annealing in gate stacks with high-k oxides was investigated. In the last part, the impact of the different investigated mechanisms on CMOS devices electrical behaviour was finally evaluated, resulting in the improvement of TCAD models predictability on MOS transistors performances, as well as FSI (Front Side Illumination) and BSI (Back Side Illumination) CMOS-based image sensors.
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Submitted on : Tuesday, July 8, 2014 - 10:44:03 AM
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  • HAL Id : tel-01020497, version 1

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Zahi Essa. Physical modelling of impurity diffusion and clustering phenomena in CMOS based image sensors. Micro and nanotechnologies/Microelectronics. Université Paul Sabatier - Toulouse III, 2013. English. ⟨tel-01020497⟩

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