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Transport thermique dans des membranes très minces de SiN amorphe

Abstract : In order to understand the mechanisms of the heat transport in very thin amorphous films, we have proposed and experimentally demonstrated a new technique to measure the thermal properties of very thin membranes. This technique consists in coupling the 3 omega method to the Völklein geometry (elongated suspended membrane). The sample of interest is then implemented into a specific Wheatstone bridge in order to eliminate the electrical 1 omega signal. This technique allows the measurement with very high sensitivity of the 3 omega thermal signal and therefore the thermal properties of the membranes. Silicon nitride membranes studied in this work constitutes a typical amorphous material. We have been interested in the study on the thermal transport in such system of reduced dimensions as function of temperature and intrinsic modified stress. In order to accomplish this goal, silicon nitride membranes of high stress and low stress have been measured respectively with the thickness 50 nm and 100 nm. The overall behaviour of the measured thermal conductivity is an increase as the temperature is increased, a trend commonly found for amorphous material. The 50 nm data show thermal conductivity less than that of the 100 nm, this is consistent of the effect of reduced dimensions. The measured heat capacity is apparently higher than what is expected from the Debye phonon heat capacity. This is especially significant below 100 K where the heat capacity deviates significantly from the T3 Debye law. A theoretical model taking into account the presence of TLS in amorphous materials is then used to fit the experimental data. The theoretical fits are in excellent agreement with the experimental results. It was seen experimentally that stress has no effect on the specific heat of silicon nitride. Moreover, we have demonstrated that stress does not affect the dissipation in silicon nitride, and the dissipation dilution seems to be the sole cause of the reduction of dissipation by an applied stress in high stress silicon nitride. Therefore, stress should not affect thermal conductivity of silicon nitride, and this is consistent with the experimental results. As application for the 3 omega-Völklein method, we have demonstrated that the SiN membrane can be used as specific thermal sensor to characterize another material deposited on the backside of the membrane. We have tested this model to measure thermal properties of Bi2Te3 film and the results are in excellent agreement with literature. As the SiN is an insulator, this model is able to measure very thin films whatever its nature, insulator, semi conductor or metallic.
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Submitted on : Friday, May 23, 2014 - 12:02:12 PM
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  • HAL Id : tel-00995424, version 1




Hossein Ftouni. Transport thermique dans des membranes très minces de SiN amorphe. Autre [cond-mat.other]. Université de Grenoble, 2013. Français. ⟨NNT : 2013GRENY046⟩. ⟨tel-00995424⟩



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