Skip to Main content Skip to Navigation
Theses

Intégration 3D de nanofils Si-SiGe pour la réalisation de transistors verticaux 3D à canal nanofil

Abstract : The goal of this thesis is to build and characterize nanowire based field-effect-transistors. These FET will have either back or wrapping gate using standard CMOS process. Theses transistors will allow us to increase the integration density in back end stages of IC's fabrication and add new functionnalities suc as reconfigurable interconnections. The thesis will be done in collaboration between LTM/CNRS and CEA/INAC/SP2M/SiNaPS laboratories using the PTA facilities located in MINATEC.
Document type :
Theses
Complete list of metadata

Cited literature [11 references]  Display  Hide  Download

https://tel.archives-ouvertes.fr/tel-00981971
Contributor : ABES STAR :  Contact
Submitted on : Wednesday, April 23, 2014 - 10:17:09 AM
Last modification on : Friday, March 25, 2022 - 9:42:43 AM
Long-term archiving on: : Wednesday, July 23, 2014 - 11:30:32 AM

File

32132_ROSAZ_2012_archivage.pdf
Version validated by the jury (STAR)

Identifiers

  • HAL Id : tel-00981971, version 1

Collections

Citation

Guillaume Rosaz. Intégration 3D de nanofils Si-SiGe pour la réalisation de transistors verticaux 3D à canal nanofil. Autre. Université de Grenoble, 2012. Français. ⟨NNT : 2012GRENT108⟩. ⟨tel-00981971⟩

Share

Metrics

Record views

405

Files downloads

424