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Effet de champs dans le diamant dopé au bore

Abstract : As the demand in high power and high frequency electronics is still growing, standard semiconductors show their limits. Approaches based either on new archi- tectures or wide band gap materials should allow to overcome these limits. Diamond, with its outstanding properties, seems to be the ultimate semiconductor. Neverthe- less, it also suffers from limitations, especially the high ionization energy of the boron p-type dopant that results in a low carrier concentration at room temperature. In- novative solutions relying on 2D gas or/and field effect ionization has been imagined to overcome this problem. This work is focused on two of these solutions: i) boron delta-doping consisting in highly doped layer between two intrinsic layers, resulting in a conduction combining a high mobility with a large carrier concentration and ii) metal-oxide-semiconductor field effect transistor (MOSFET) where the conducting or insulating behavior of the channel is based on the electrostatic control of the band curvature at the oxide/semiconducting diamond interface. For both structures, a lot of technological challenges need to be surmounted before fabricating the related transistor. On one hand, the temperature dependence of the hole sheet density and mobility of several nano-metric scaled delta boron doped has been investigated experimentally and theoretically over a large temperature range (6 K
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Submitted on : Tuesday, September 9, 2014 - 3:02:08 PM
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  • HAL Id : tel-00968699, version 2




Gauthier Chicot. Effet de champs dans le diamant dopé au bore. Autre. Université de Grenoble, 2013. Français. ⟨NNT : 2013GRENT086⟩. ⟨tel-00968699v2⟩



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