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Etude de la localisation de nanofils de silicium sur des surfaces Si3N4 et SiO2 micro & nanostructurées

Abstract : Semiconductor and metal oxides nanowires as well as carbon nanotubes are attractive for Nano electronic applications but also for chemical or biological sensors. This interest is related to the properties of 1D nanostructures with very small diameters and with high surface / volume ratios. The main property of such nanostructures is the high electrostatic sensitivity to their environment. The related surface charge variations as function of the medium may also be used as a way for the nanostructure self-organization. This work has been developed with this perspective. The investigated chemical approach is compatible with a post-integration of nano-objects on silicon CMOS technologies. More precisely, our “Bottom Up” method uses the different surface charges on SiO2 and Si3N4 as a function of the solution pH. After a literature review focused on the Point of Zero Charge (PZC) for insulating materials depending on the fabrication techniques, we have studied experimentally thermal SiO2 and LPCVD Si3N4 layers grown or deposited on silicon. The PZC of our layers have been determined using electrochemical impedance measurements in a EIS configuration. These impedance measurements have been cross correlated with contact angle measurements as function of the solution’s pH. A systematic study as function of pH in the 1.5 – 4.5 range as been carried out and an experimental protocol has been found in order to demonstrate the preferential localization of silicon nanowires on Si3N4. From this study, it is found that a quasi-perfect localization is possible for a pH between 3 and 3.25 as expected from the proposed electrostatic model. Finally, the developed process is low-cost, simple and reproducible which presents important advantages. It uses a very classical chemistry at ambient temperature and allows the localization of silicon nano-objects without any risk for the CMOS devices of the front-end level.
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Submitted on : Wednesday, March 19, 2014 - 4:08:46 PM
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  • HAL Id : tel-00961229, version 1


Hassan Chamas. Etude de la localisation de nanofils de silicium sur des surfaces Si3N4 et SiO2 micro & nanostructurées. Autre. INSA de Lyon, 2013. Français. ⟨NNT : 2013ISAL0048⟩. ⟨tel-00961229⟩



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