D. J. Paul, Pictoring people : non-intrusive imaging, State of the Science Review Foresight Exploiting the Electromagnetic Spectrum, 2005.

D. H. Auston, K. P. Cheung, and P. R. Smith, Picosecond photoconducting Hertzian dipoles, Applied Physics Letters, vol.45, issue.3, p.284, 1984.
DOI : 10.1063/1.95174

E. Peytavit, Génération et propagation aux fréquences Térahertz, Thèse de doctorat de l'Université des sciences et technolgies de Lille, 2005.

H. Eisele, Second-harmonic power extraction from InP Gunn devices with more than 1

H. Eisele and G. I. Haddad, Two terminals millimiterwave sources, MTT-46, pp.739-745, 1998.

O. Dupuis, Technologies et caractérisation hautes fréquences de composants III-V à effet tunnel résonnant, Thèse de doctorat de l'Université des Sciences et Technologie de Lille, 1999.

M. Chen, R. Nishimoto, and . Lai, Power-amplifier modules covering 70-113 GHz Using MMICs, MTT-49, pp.9-16, 2001.

S. J. Smith and E. M. Purcell, Visible Light from Localized Surface Charges Moving across a Grating, Physical Review, vol.92, issue.4, p.1096, 1953.
DOI : 10.1103/PhysRev.92.1069

A. P. Schieder, S. F. Shkaev, and . Volokhov, Precision broadband spectroscopy in the terahertz region, J. Mol. Spec, vol.165, issue.294, p.300, 1994.

G. L. Carr, M. C. Martin, W. R. Mckinney, K. Jordan, G. R. Neil et al., High-power terahertz radiation from relativistic electrons, Nature, vol.30, issue.6912, pp.153-156, 2002.
DOI : 10.1103/PhysRevE.49.4480

G. Gallerano and S. Biedron, Overview of terahertz radiation sources, Proceeding of the 2004 FEL, p.216, 2004.

G. Chattopadhyay, E. Schlecht, J. Gill, S. Martin, A. Maestrini et al., A broadband 800 GHz Schottky Balanced Doubler2.7 THz tripler using a GaAs monolithic membrane diode, Thèse de doctorat de l'Université de sciences et technologies de Lille, pp.117-118, 1991.

W. Lin, J. X. Han, L. K. Takahashi, H. A. Harker, F. N. Keutsch et al., Terahertz vibration-rotation-tunneling spectroscopy of the water tetramer-d8: Combined analysis of vibrational bands at 4.1 and 2.0THz, The Journal of Chemical Physics, vol.128, issue.9, p.10, 2008.
DOI : 10.1063/1.2837466

D. W. Schmutienmaer, R. J. Steiert, and . Saykally, The Berkeley tunable far infrared laser spectrometers, Rev. Sci. Instr, vol.62, issue.1701, p.1716, 1991.

S. Komiyama, -Ge, Physical Review Letters, vol.48, issue.4, pp.271-274, 1982.
DOI : 10.1103/PhysRevLett.48.271
URL : https://hal.archives-ouvertes.fr/hal-00866515

. Shastin, Stimulated emission in the long-wavelength IR region from hot holes in Ge in crossed electric and magnetic fields, JETP Lett, vol.40, pp.804-806, 1984.

J. Faist, F. Capasso, D. L. Sivco, C. Sirtori, A. L. Hutchinson et al., Quantum Cascade Laser, Science, vol.264, issue.5158, pp.553-556, 2002.
DOI : 10.1126/science.264.5158.553
URL : https://hal.archives-ouvertes.fr/hal-00156810

R. C. Ritchie, F. Iotti, and . Rossi, Terahertz semiconductor-heterostructure laser, Nature, vol.417, pp.156-159, 2002.

B. S. Williams, Terahertz quantum-cascade lasers, Nature Photonics, vol.83, issue.9, pp.517-525, 2007.
DOI : 10.1038/nphoton.2007.166

S. Kumar, B. S. Williams, Q. Hu, and J. L. Reno, 1.9THz quantum-cascade lasers with one-well injector, Applied Physics Letters, vol.88, issue.12, p.121123, 2006.
DOI : 10.1063/1.2189671
URL : https://hal.archives-ouvertes.fr/in2p3-00148681

D. Armand, Application de la spectroscopie terahertz à la detection de substances sensibles, Thèse de doctorat de l'Université de Grenoble, 2011.
URL : https://hal.archives-ouvertes.fr/tel-00721831

B. I. Greene, P. N. Saeta, D. R. Dykaar, and S. L. Chuang, Far-infrared light generation at semiconductor surfaces and its spectroscopic applications, IEEE Journal of Quantum Electronics, vol.28, issue.10, pp.2302-2312, 1992.
DOI : 10.1109/3.159537

V. L. Malevich, R. Adomavicius, and A. Krotkus, THz emission from semiconductor surfaces, Comptes rendus de physique, pp.130-141, 2008.
DOI : 10.1016/j.crhy.2007.09.014

H. Eusèbe, Etude théorique et expérimentale de la génération THz par photocommutation dans des composants en GaAs basse-température, Thèse de doctorat de l'INPG, 2004.

E. Castro-camus, J. Lloyd-hughes, and M. B. Johnston, Three-dimensional carrierdynamics simulation of terahertz emission from photoconductive switches, Phys. Rev. B71, p.195301, 1995.

A. Leitenstorfer, S. Hunsche, J. Shah, M. C. Nuss, and W. H. Knox, Femtosecond high-field transport in compound semiconductors, Physical Review B, vol.61, issue.24, p.5140, 2000.
DOI : 10.1103/PhysRevB.61.16642

C. Ludvig and J. , Studies of the temporal and spectral shape of terahertz pulses generated from photoconducting switches, Appl. Phys. Lett, vol.69, p.1194, 1996.

K. Liu, A. Krotkus, K. Bertulis, J. Xu, and X. C. Zhang, -type GaAs with Be-doped low-temperature-grown GaAs surface layers, Journal of Applied Physics, vol.94, issue.5, p.3651, 2003.
DOI : 10.1063/1.1597978
URL : https://hal.archives-ouvertes.fr/tel-00259428

J. Lloyd-hughes, E. Castro-camus, M. D. Fraser, C. Jagadish, and M. B. Johnston, Carrier dynamics in ion-implanted GaAs studied by simulation and observation of terahertz emission, Physical Review B, vol.70, issue.23, p.235330, 2004.
DOI : 10.1103/PhysRevB.70.235330

L. Duvillaret, F. Garet, J. Roux, and J. Coutaz, Analytical modeling and optimization of terahertz time-domain spectroscopy experiments, using photoswitches as antennas, IEEE Journal of Selected Topics in Quantum Electronics, vol.7, issue.4, p.615, 2001.
DOI : 10.1109/2944.974233

D. S. Kim and D. S. Citrin, Coulomb and radiation screening in photoconductive terahertz sources, Applied Physics Letters, vol.88, issue.16, p.161117, 2006.
DOI : 10.1063/1.2196480

J. T. Darrow, X. C. Zhang, D. H. Auston, and J. D. Morse, Saturation properties of large-aperture photoconducting antennas, IEEE Journal of Quantum Electronics, vol.28, issue.6, p.1607, 1992.
DOI : 10.1109/3.135314

P. K. Benicewicz and A. J. Taylor, Scaling of terahertz radiation from large-aperture biased InP photoconductors, Optics Letters, vol.18, issue.16, p.1332, 1993.
DOI : 10.1364/OL.18.001332

K. J. Siebert, A. Lisauskas, T. Loffler, and H. G. Roskos, Field Screening in Low-Temperature-Grown GaAs Photoconductive Antennas, Japanese Journal of Applied Physics, vol.43, issue.3, p.1038, 2004.
DOI : 10.1143/JJAP.43.1038

F. W. Smith, H. R. Calawa, C. L. Chen, M. J. Mantra, and L. J. Mahoney, E buffer used to eliminate backgating in GaAs MESFET's, New M.B. IEEE Elec. Dev. Lett, vol.77, pp.77-80, 1988.
DOI : 10.1109/55.2046

K. A. Mcintosh, K. B. Nichols, S. Verghese, and E. R. Brown, Investigation of ultrashort photocarrier relaxation times in low-temperature-grown GaAs, Applied Physics Letters, vol.70, issue.3, p.354, 1997.
DOI : 10.1063/1.118412

D. C. Look, Molecular beam epitaxial GaAs grown at low temperatures, Thin solid films 231, p.61, 1993.
DOI : 10.1016/0040-6090(93)90703-R

N. Chimot, « Génération et detection de rayonnement aux fréquences THz à partir d'antennes photoconductrices en InGaAs sur InP irradié par des ions, Thèse de doctorat de l'université Paris XI Orsay, 2006.

I. S. Gregory, C. Baker, W. R. Tribe, M. J. Evans, H. E. Beere et al., High resistivity annealed low-temperature GaAs with 100 fs lifetimes, Applied Physics Letters, vol.83, issue.20, p.4199, 2003.
DOI : 10.1063/1.1628389

F. W. Smith, H. Q. Le, V. Diadiuk, M. A. Hollis, A. R. Calawa et al., Picosecond GaAs???based photoconductive optoelectronic detectors, Applied Physics Letters, vol.54, issue.10, p.890, 1989.
DOI : 10.1063/1.100800

. Schiettekatte, Terahertz emission properties of arsenic and oxygen ion-implanted GaAs based photoconductive pulsed sources, J. Vac. Sci. Technol. A, vol.24, issue.3, pp.774-777, 2006.

B. Salem, D. Morris, V. Aimez, J. Beerens, J. Beauvais et al., Pulsed photoconductive antenna terahertz sources made on ion-implanted GaAs substrates, Journal of Physics: Condensed Matter, vol.17, issue.46, pp.7327-7333, 2005.
DOI : 10.1088/0953-8984/17/46/016

S. Gupta, J. F. Whitaker, and G. A. Mourou, Ultrafast carrier dynamics in III-V semiconductors grown by molecular-beam epitaxy at very low substrate temperatures, IEEE Journal of Quantum Electronics, vol.28, issue.10, pp.28-2464, 1992.
DOI : 10.1109/3.159553

M. C. Beard, G. M. Turner, and C. A. Schmuttenmaer, Subpicosecond carrier dynamics in low-temperature grown GaAs as measured by time-resolved terahertz spectroscopy, Journal of Applied Physics, vol.90, issue.12
DOI : 10.1063/1.1416140

H. Nemec, A. Pashkin, P. Kuzel, M. Khazan, S. Schnüll et al., Carrier dynamics in low-temperature grown GaAs studied by terahertz emission spectroscopy, Journal of Applied Physics, vol.90, issue.3, p.1303, 2001.
DOI : 10.1063/1.1380414

P. Benicewicz, J. P. Roberts, and A. J. Taylor, Scaling of terahertz radiation from large-aperture biased photoconductors, Journal of the Optical Society of America B, vol.11, issue.12, p.2533, 1994.
DOI : 10.1364/JOSAB.11.002533

A. Krotkus, S. Marcinkevicius, J. Jasinski, M. Kaminska, H. H. Tan et al., Picosecond carrier lifetime in GaAs implanted with high doses of As ions: An alternative material to low???temperature GaAs for optoelectronic applications, Applied Physics Letters, vol.66, issue.24, p.3304, 1995.
DOI : 10.1063/1.113738

L. Joulaud, Echantillonnage électro-optique à 1,55 µm pour la mesure de circuits rapides sur InP, Thèse de doctorat de l, 2004.

M. Tani, K. Yamamoto, E. S. Estacio, C. T. Que, H. Nakajima et al., Photoconductive Emission and Detection of Terahertz Pulsed Radiation Using Semiconductors and Semiconductor Devices, Journal of Infrared, Millimeter, and Terahertz Waves, vol.18, issue.4, pp.393-404, 2012.
DOI : 10.1007/s10762-012-9882-1

D. Vignaud, J. F. Lampin, E. Lefebvre, M. Zaknoune, and F. Mollot, Electron lifetime of heavily Be-doped In0.53Ga0.47As as a function of growth temperature and doping density, Applied Physics Letters, vol.80, issue.22, pp.4151-4153, 2002.
DOI : 10.1063/1.1483126
URL : https://hal.archives-ouvertes.fr/hal-00148650

R. A. Metzger, A. S. Brown, L. G. Mcgray, and J. A. Henige, Structural and electrical properties of low temperature GaInAs, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.11, issue.3, pp.798-801, 1993.
DOI : 10.1116/1.586792

A. Takazato, M. Kamaruka, T. Matsui, J. Kitagawa, and Y. Kadoya, Detection of THz waves using low-temperature grown InGaAs with 1.56 µm pulse excitation, p.101119, 2007.

E. R. Brown, D. C. Driscoll, and A. C. Gossard, State-of-the-art in 1.55 ??m ultrafast InGaAs photoconductors, and the use of signal-processing techniques to extract the photocarrier lifetime, Semiconductor Science and Technology, vol.20, issue.7, p.199, 2005.
DOI : 10.1088/0268-1242/20/7/009

C. D. Wood, O. Hatem, J. E. Cunningham, E. H. Linfield, A. G. Davies et al., Terahertz emission from metal-organic chemical vapor deposition grown Fe:InGaAs using 830 nm to 1.55 µm excitation, Applied Physics Letters, p.96194104, 2010.

O. Hatem, J. Cunningham, E. H. Linfield, C. D. Wood, and A. G. , Terahertz-frequency photoconductive detectors fabricated from metal-organic chemical vapour deposition-grown Fe-Doped InGaAs, Applied physics letters, p.121107, 2011.

C. Carmody, H. H. Tan, C. Jagadish, A. Gaarder, and S. Marcinkevicius, Ion-implanted In0.53Ga0.47As for ultrafast optoelectronic applications, Applied Physics Letters, vol.82, issue.22, p.3913, 2003.
DOI : 10.1063/1.1579565

C. Jagadish, H. H. Tan, A. Krotkus, S. Marcinkevicius, K. P. Korona et al., Ultrafast carrier trapping in high energy ion implanted gallium arsenide, Applied Physics Letters, vol.68, issue.16, p.2225, 1996.
DOI : 10.1063/1.115866

M. Suzuki and M. Tonouchi, Fe-implanted InGaAs terahertz emitters for 1.56??m wavelength excitation, Applied Physics Letters, vol.86, issue.5, p.51104, 2005.
DOI : 10.1063/1.1861495

M. Suzuki and M. Tonouchi, Fe-implanted InGaAs photoconductive terahertz detectors triggered by 1.56??m femtosecond optical pulses, Applied Physics Letters, vol.86, issue.16, p.163504, 2005.
DOI : 10.1063/1.1901817

S. C. Subramaniam and A. A. Rezazadeh, The effects of thermal annealing on iron bombarded InP/InGaAs multilayer structures, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol.248, issue.1, pp.59-66, 2006.
DOI : 10.1016/j.nimb.2006.04.053

S. J. Pearton, Ion implantation for isolation of III-V semiconductors, Materials Science Reports, vol.4, issue.6, pp.313-367, 1990.
DOI : 10.1016/S0920-2307(05)80001-5

N. Chimot, J. Mangeney, P. Mounaix, M. Tondusson, K. Blary et al., Terahertz radiation generated and detected by Br+-irradiated In0.53Ga0.47As photoconductive antenna excited at 800nm wavelength, Applied Physics Letters, vol.89, issue.8, p.83519, 2006.
DOI : 10.1063/1.2338538
URL : https://hal.archives-ouvertes.fr/hal-00162817

L. Joulaud, J. Mangeney, N. Chimot, P. Crozat, G. Fishman et al., Conductions mechanisms in ion-irradiated InGaAs Layers Electrical properties of 1.55 µm sensitive ion-irradiated InGaAs with subpicosecond carrier lifetime, J. App. Phys. Elect. Lett, vol.97, issue.39, p.681, 2003.

L. Joulaud, J. Mangeney, J. M. Lourtioz, P. Crozat, and G. Patriarche, Thermal stability of ion-irradiated InGaAs with (sub-) picosecond carrier lifetime, Applied Physics Letters, vol.82, issue.6, p.856, 2003.
DOI : 10.1063/1.1543231

J. Mangeney, L. Joulaud, P. Crozat, J. M. Lourtioz, and J. Decobert, Ultrafast response (???2.2???ps) of ion-irradiated InGaAs photoconductive switch at 1.55?????m, Applied Physics Letters, vol.83, issue.26, p.5551, 2003.
DOI : 10.1063/1.1633030

N. Chimot, J. Mangeney, L. Joulaud, P. Crozat, H. Bernas et al., Terahertz Radiation from heavy-ion irradiated InGaAs photoconductive antenna at 1.55 µm, Appl. Phys. Lett, vol.87, 2005.
DOI : 10.1063/1.2126110

K. Kimani, Z. D. Williams, J. Y. Taylor, H. Suen, R. S. Lu et al., Toward a 1550 nm InGaAs photoconductive switch for terahertz generation, Optics Letters, vol.34, issue.20, pp.3068-3070, 2009.

D. C. Driscoll, M. P. Hanson, A. C. Gossard, and E. R. Brown, Ultrafast photoresponse at 1.55 ??m in InGaAs with embedded semimetallic ErAs nanoparticles, Applied Physics Letters, vol.86, issue.5, p.51908, 2005.
DOI : 10.1063/1.1852092

J. H. Gossard and . Smet, 1.55 µm ultrafast photoconductive switches based on ErAs:InGaAs ", Applied Physics Letters, issue.13, p.92131117, 2008.
URL : https://hal.archives-ouvertes.fr/jpa-00214434

B. Sartorius, H. Roehle, H. Künzel, J. Böttcher, M. Schlak et al., All-fiber terahertz time-domain spectrometer operating at 1.5 µm telecom wavelengths, Opt. Express, issue.13, pp.169565-9570, 2008.
DOI : 10.1364/oe.16.009565

H. Kuenzel, J. Böttcher, K. Biermann, H. Hensel, H. Roehle et al., Low temperature MBE-grown In(Ga,Al)As/InP structures for 1.55 µm THz photoconductive antenna applications, 20 th International conference on Indium Phosphide and related materials, pp.1-4, 2008.

. Sartorius, Next generation 1.5 µm terahertz antennas : mesa-structuring of InGaAs/InAlAs photoconductive layers, Optics express, vol.18, issue.3, pp.2296-2301, 2010.

. Patriarche, Epitaxial growth and picosecond carrier dynamics at 1.55µm of GaInAs/GaInNAs superlattices, Appl. Phys. Lett, vol.95, p.141910, 2009.

L. Qian, S. D. Benjamin, P. W. Smith, B. J. Robinson, and D. A. Thompson, Subpicosecond carrier lifetime in beryllium-doped InGaAsP grown by He-plasma-assisted molecular beam epitaxy, Applied Physics Letters, vol.71, issue.11, p.71, 1997.
DOI : 10.1063/1.119952

A. Fekecs, M. Bernier, D. Morris, M. Chicoine, F. Schiettekatte et al., Fabrication of high resistivity cold-implanted InGaAsP photoconductors for efficient pulsed terahertz devices, Optical Materials express 1165, 2011.
DOI : 10.1364/OME.1.001165

C. Lee, C. Yang, S. Lin, S. Huang, O. Wada et al., Effects of two-photon absorption on terahertz radiation generated by femtosecond-laser excited photoconductive antennas, Optics Express, vol.19, issue.24, pp.23689-23697, 2011.
DOI : 10.1364/OE.19.023689

M. Tani, K. Lee, and X. Zhang, Detection of terahertz radiation with low-temperature-grown GaAs-based photoconductive antenna using 1.55 mm probe, Appl. Phys. Lett, vol.77, issue.9, 2000.

R. Beneyton, « Sur l'incorporation du Thallium dans une matrice III-V : préparation de GaTlAs et InAlAs par EJM, Thèse de doctorat de l'Ecole Centrale de Lyon, 2004.

A. Krotkus, K. Bertulis, L. Dapkus, U. Olin, and S. Marcinkevicnius, Ultrafast carrier trapping in Be-doped low-temperature-grown GaAs, Applied Physics Letters, vol.75, issue.21, pp.3336-3338, 1999.
DOI : 10.1063/1.125343

A. Krotkus, K. Bertulis, K. Korona, A. Wolos, J. Siegert et al., Be-doped low-temperature-grown GaAs material for optoelectronic switches, IEEE Proc. Optoelectron, pp.111-115, 2002.
DOI : 10.1049/ip-opt:20020435

R. Adomavicius, A. Krotkus, K. Bertulis, V. Sirutkaitis, R. Butkus et al., Hole trpping time measurement in low-temperature-grown gallium arsenide

J. Lindhard, M. Scharff, and H. E. Schiott, Range concepts and heavy ion ranges, Mat. Phys. Medd, vol.33, p.14, 1963.

M. Mikou, R. Carin, P. Bogdanski, and P. Marie, « Swift heavy ion induced defect study in epitaxial n-type GaAs from in situ Hall effect measurements, J. Phys.III, p.1661, 1997.

J. F. Ziegler, J. P. Biersack, and U. Littmark, The stopping and range of ions in solids, 1985.

J. P. Biersack and L. G. Haggmark, A Monte Carlo computer program for the transport of energetic ions in amorphous targets, Nuclear Instruments and Methods, vol.174, issue.1-2, p.257, 1980.
DOI : 10.1016/0029-554X(80)90440-1

G. H. Kinchin and R. S. Pease, The Displacement of Atoms in Solids by Radiation, Reports on Progress in Physics, vol.18, issue.1, 1955.
DOI : 10.1088/0034-4885/18/1/301

D. Pons and J. C. Bourgoin, Irradiation-induced defects in GaAs, Journal of Physics C: Solid State Physics, vol.18, issue.20, p.3839, 1985.
DOI : 10.1088/0022-3719/18/20/012

E. Lugagne-delpon, J. L. Oudar, N. Bouche, R. Raj, A. Shen et al., Ultrafast excitonic saturable absorption in ion-implanted InGaAs/InAlAs multiple quantum wells, Applied Physics Letters, vol.72, issue.7, p.759, 1998.
DOI : 10.1063/1.120885

J. F. Roux, « Dispositifs à semi-conducteurs rapides pour la génération et la détection de signaux électriques GHz-THz ». Habilitation à diriger des recherches, 2010.

R. Tommasi, P. Langot, and F. Vallée, Femtosecond hole thermalization in bulk GaAs, Applied Physics Letters, vol.66, issue.11
DOI : 10.1063/1.113201

A. Krotkus and J. L. Coutaz, Non-stoichiometric semiconductor materials for terahertz optoelectronics applications, Semiconductor Science and Technology, vol.20, issue.7, p.142, 2005.
DOI : 10.1088/0268-1242/20/7/004

B. R. Bennett, R. A. Soref, and J. A. , Carrier-induced change in refactive index of InP, GaAs and InGaAsP, IEEE J. of Quantum Electronics, vol.26, pp.1-113, 1990.

E. Burstein, Anomalous Optical Absorption Limit in InSb, Physical Review, vol.93, issue.3, pp.632-633, 1954.
DOI : 10.1103/PhysRev.93.632

H. Haug and S. W. Koch, Quantum Theory of the Optical and Electronic properties of Semiconductors, World Scientific, 1993.

E. Zielinski, H. Schweizer, K. Streubel, H. Eisele, and G. Weimann, Excitonic transitions and exciton damping processes in InGaAs/InP, Journal of Applied Physics, vol.59, issue.6, pp.2196-2204, 1986.
DOI : 10.1063/1.336358

. Mangeney, High photocarrier mobility in ultrafast ion-irradiated InGaAs for terahertz applications, J. Phys. D-appl. Phys, vol.42, p.195103, 2009.

A. Prabhakar, Investigations of deep level defects in semiconductor material systems

S. Marcinkevicius, C. Jagadish, H. H. Tan, M. Kaminska, K. Korona et al., Influence of annealing on carrier dynamics in As ion-implanted epitaxially liftedoff GaAs layers, Appl. Phys. Lett, vol.76, issue.10, 2000.

S. E. Ralph, Y. Chen, J. Woodall, and D. Mcinturff, As : Intervalley scattering rates observed via THz spectroscopy, Phys. Review B, vol.5354, issue.0, pp.47-55, 1996.
DOI : 10.1103/physrevb.54.5568

A. M. Crook, E. Lind, Z. Griffith, M. J. Rodwell, J. D. Zimmerman et al., Low resistance, nonalloyed Ohmic contacts to InGaAs, Applied Physics Letters, vol.91, issue.19, p.192114, 2007.
DOI : 10.1063/1.2806235

G. Franz and M. Amann, Extremely Low Contact Resistivity of Ti/Pt/Au Contacts on p[sup +]-InGaAs as Determined by a New Evaluation Method, Journal of The Electrochemical Society, vol.140, issue.3, pp.847-850, 1993.
DOI : 10.1149/1.2056171

B. Sartorius, D. Stanze, T. Göbel, D. Schmidt, and M. Schell, Continuous Wave Terahertz Systems Based on 1.5 ??m Telecom Technologies, Journal of Infrared, Millimeter, and Terahertz Waves, vol.45, issue.11, pp.405-417, 2012.
DOI : 10.1007/s10762-011-9849-7

C. Sun, I. Tan, and J. E. Bowers, Ultrafast Transport Dynamics of p-i-n Photodetectors Under High-Power Illumination, IEEE Photonics Letters, vol.10, pp.135-137, 1998.

H. Ohnishi, N. Yokoyama, and A. Shibatomi, Modeling electron transport in InGaAs-based resonant-tunneling hot-electron transistors, IEEE Transactions on Electron Devices, vol.36, issue.10, pp.2335-2339, 1989.
DOI : 10.1109/16.40919

S. Malyshev, A. Chizh, and V. Andrievski, InGaAs p-i-n Photodiodes for Microwave Applications, 12e GAAS Symposium, pp.283-286, 2004.