Two-dimensional electron gas at a semiconductor-semiconductor interface, Solid State Communications, vol.29, issue.10, pp.705-709, 1979. ,
DOI : 10.1016/0038-1098(79)91010-X
Polarization effects, surface states, and the source of electrons in AlGaN/GaN heterostructure field effect transistors, Applied Physics Letters, vol.77, issue.2, pp.250-252, 2000. ,
DOI : 10.1063/1.126940
As heterojunctions, Applied Physics Letters, vol.35, issue.2, pp.99-101, 1979. ,
DOI : 10.1063/1.91040
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures, Journal of Applied Physics, vol.85, issue.6, pp.3222-3233, 1999. ,
DOI : 10.1063/1.369664
MOVPE growth study of BxGa(1???x)N on GaN template substrate, MOVPE growth study of BxGa(1?x)N on GaN template substrate, pp.233-238, 2006. ,
DOI : 10.1016/j.spmi.2006.09.021
URL : https://hal.archives-ouvertes.fr/hal-00181874
Nonlinear macroscopic polarization in III-V nitride alloys, Physical Review B, vol.64, issue.8, 2001. ,
DOI : 10.1103/PhysRevB.64.085207
Evidence for nonlinear macroscopic polarization in III???V nitride alloy heterostructures, Applied Physics Letters, vol.80, issue.7, pp.1204-1206, 2002. ,
DOI : 10.1063/1.1448668
Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures, Journal of Physics: Condensed Matter, vol.14, issue.13, p.3399, 2002. ,
DOI : 10.1088/0953-8984/14/13/302
Demonstration of undoped quaternary AlInGaN???GaN heterostructure field-effect transistor on sapphire substrate, Applied Physics Letters, vol.86, issue.22, 2005. ,
DOI : 10.1063/1.1942643
Elastic properties of zinc-blende and wurtzite AlN, GaN, and InN, Journal of Applied Physics, vol.82, issue.6, pp.2833-2839, 1997. ,
DOI : 10.1063/1.366114
Spontaneous polarization and piezoelectric constants of III-V nitrides, Physical Review B, vol.56, issue.16, pp.10024-10027, 1997. ,
DOI : 10.1103/PhysRevB.56.R10024
Hétéro-épitaxie de Nitrure de Gallium sur substrat de silicium (111) et applications, Thèse de Doctorat, 2003. ,
The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111), Journal of Applied Physics, vol.105, issue.3, pp.33701-33709, 2009. ,
DOI : 10.1063/1.3063698
Screw dislocations in GaN: The Ga-filled core model, Applied Physics Letters, vol.78, issue.16, pp.2288-2290, 2001. ,
DOI : 10.1063/1.1361274
Electronic structures of GaN edge dislocations, Physical Review B, vol.61, issue.23, pp.16033-16039, 2000. ,
DOI : 10.1103/PhysRevB.61.16033
Caractérisations des hétérostructures AlGaN/GaN : des propriétés de transport aux transistors à haute mobilité HEMT, Habilitation à Diriger des Recherches, 2004. ,
Lateral variations in threshold voltage of an AlxGa1???xN/GaN heterostructure field-effect transistor measured by scanning capacitance spectroscopy, Applied Physics Letters, vol.78, issue.1, pp.88-90, 2001. ,
DOI : 10.1063/1.1335840
Optical Characterization of AlxGa1?xN Alloys (x < 0.7) Grown on Sapphire or Silicon, physica status solidi (b), vol.59, issue.3, pp.887-891, 2002. ,
DOI : 10.1002/1521-3951(200212)234:3<887::AID-PSSB887>3.0.CO;2-D
Band parameters for nitrogen-containing semiconductors, Journal of Applied Physics, vol.94, issue.6, pp.3675-3696, 2003. ,
DOI : 10.1063/1.1600519
Group III Nitride Semiconductor Compounds, 1998. ,
GaN (0.07<x<0.23) Heterostructures and their Application for High Power Electronics, Thèse de Doctorat, 2010. ,
The sensitivity of the electron transport within bulk wurtzite indium nitride to variations in the crystal temperature, the doping concentration, and the nonparabolicity coefficient: an updated Monte Carlo analysis, Journal of Materials Science: Materials in Electronics, vol.21, pp.218-230, 2010. ,
Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy, Journal of Applied Physics, vol.86, issue.8, pp.4520-4526, 1999. ,
DOI : 10.1063/1.371396
Effect of polarization fields on transport properties in AlGaN/GaN heterostructures, Journal of Applied Physics, vol.89, issue.3, pp.1783-1789, 2001. ,
DOI : 10.1063/1.1339858
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures, Journal of Applied Physics, vol.87, issue.1, pp.334-344, 2000. ,
DOI : 10.1063/1.371866
AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy, Journal of Applied Physics, vol.90, issue.10, pp.5196-5201, 2001. ,
DOI : 10.1063/1.1412273
Optimisation de l'épitaxie sous jets moléculaires d'hétérostructures à base de GaN : application aux transistors à haute mobilité d'électrons sur substrat silicium, Thèse de doctorat, 2009. ,
Ultrathin InAlN/GaN heterostructures on sapphire for high on/off current ratio high electron mobility transistors, Journal of Applied Physics, vol.113, issue.21, pp.214503-214509, 2013. ,
DOI : 10.1063/1.4808260
Two-dimensional electron mobility limitation mechanisms in AlxGa1-xN/GaN heterostructures, Physical Review B, vol.72, 2005. ,
Molecular Beam Epitaxy of Group-III Nitrides on Silicon Substrates: Growth, Properties and Device Applications, physica status solidi (a), vol.48, issue.1, pp.501-510, 2001. ,
DOI : 10.1002/1521-396X(200112)188:2<501::AID-PSSA501>3.0.CO;2-6
Elaboration, étude et application d'hétérostructures (Al,Ga)N/GaN épitaxiées par jets moléculaires sur Si, Thèse de doctorat, 2003. ,
Première étape de la croissance de GaN sur Si(111) : la nucléation d'AlN, Thèse de doctorat, 2006. ,
Croissance d'Hétérostructures à base de GaN sur substrat de silicium orienté (001) : application aux transistors à haute mobilité d'électrons, Thèse de doctorat, 2007. ,
Elaboration d'hétérostructures (Al,Ga)N/GaN en vue d'applications électroniques, Habilitation à Diriger des Recherches, 2007. ,
Effect of carbon doping on crystal quality, electrical isolation and electron trapping in GaN based structures grown silicon substrates, Solid-State Electronics, vol.75, pp.86-92, 2012. ,
DOI : 10.1016/j.sse.2012.04.034
Inhibition of interface pollution in AlGaN/GaN HEMT structures regrown on semi-insulating GaN templates, Journal of Crystal Growth, vol.299, issue.1, pp.103-108, 2007. ,
DOI : 10.1016/j.jcrysgro.2006.10.250
AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination, Journal of Crystal Growth, vol.309, issue.1, pp.1-7, 2007. ,
DOI : 10.1016/j.jcrysgro.2007.09.023
AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor, Japanese Journal of Applied Physics, vol.40, issue.Part 2, No. 11A, p.1142, 2001. ,
DOI : 10.1143/JJAP.40.L1142
AlGaN???InGaN HEMTs for RF current collapse suppression, Electronics Letters, vol.40, issue.12, pp.771-772, 2004. ,
DOI : 10.1049/el:20040398
MOCVD-grown InGaN-channel HEMT structures with electron mobility of over, Journal of Crystal Growth, vol.272, issue.1-4, pp.278-284, 2004. ,
DOI : 10.1016/j.jcrysgro.2004.08.071
When group-III nitrides go infrared: New properties and perspectives, Journal of Applied Physics, vol.106, issue.1, pp.11101-11129, 2009. ,
DOI : 10.1063/1.3155798
AlGaN/AlN/GaN high-power microwave HEMT, IEEE Electron Device Letters, vol.22, issue.10, pp.457-459, 2001. ,
DOI : 10.1109/55.954910
High electron mobility lattice-matched AlInN???GaN field-effect transistor heterostructures, Applied Physics Letters, vol.89, issue.6, p.62106, 2006. ,
DOI : 10.1063/1.2335390
New Approach in Equilibrium Theory for Strained Layer Relaxation, Physical Review Letters, vol.73, issue.20, pp.2712-2715, 1994. ,
DOI : 10.1103/PhysRevLett.73.2712
Demonstration and analysis of reduced reverse-bias leakage current via design of nitride semiconductor heterostructures grown by molecular-beam epitaxy, Journal of Applied Physics, vol.99, issue.1, pp.14501-14507, 2006. ,
DOI : 10.1063/1.2150591
Schottky barrier engineering in III???V nitrides via the piezoelectric effect, Applied Physics Letters, vol.73, issue.13, pp.1880-1882, 1998. ,
DOI : 10.1063/1.122312
Hétéro-épitaxie de Nitrure de Gallium Semi-isolant peu disloqué sur substrat saphir pour applications transistors, Thèse de doctorat, 2006. ,
Application de la microscopie à sonde locale à l'étude de la surface de, Thèse de doctorat, 2000. ,
Hétérostructures AlGaN/GaN et InAlN/GaN pour la réalisation de HEMTs de puissance hyperfréquence en bande Ka, Thèse de doctorat ,
A new method for determining the FET small-signal equivalent circuit Microwave Theory and Techniques, IEEE Transactions on, vol.36, pp.1151-1159, 1988. ,
Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices, IEEE Transactions on Electron Devices, vol.54, issue.10, pp.2589-2597, 2007. ,
DOI : 10.1109/TED.2007.904476
GaN FETs for microwave and high-temperature applications, Solid-State Electronics, vol.41, issue.2, pp.177-180, 1997. ,
DOI : 10.1016/S0038-1101(96)00161-X
Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices, IEEE Transactions on Electron Devices, vol.54, issue.10, pp.2589-2597, 2007. ,
DOI : 10.1109/TED.2007.904476
Recessed gate AlGaN/GaN modulation-doped field-effect transistors on sapphire, Applied Physics Letters, vol.76, issue.1, pp.121-123, 2000. ,
DOI : 10.1063/1.125676
Effects of gate recess depth on pulsed I-V characteristics of AlGaN, Semiconductor Device Research Symposium, pp.439-440, 2003. ,
Unpassivated high power deeply recessed GaN HEMTs with fluorine-plasma surface treatment, IEEE Electron Device Letters, vol.27, issue.4, pp.214-216, 2006. ,
DOI : 10.1109/LED.2006.871887
Selective dry etching of GaN over AlGaN in BCl3/SF6 mixtures, High Performance Devices Proceedings. IEEE Lester Eastman Conference on, pp.132-137, 2004. ,
DC and RF characterization of AlGaN/GaN HEMTs with different gate recess depths, Solid-State Electronics, vol.54, issue.5, pp.582-585, 2010. ,
DOI : 10.1016/j.sse.2010.02.001
Etching Damages on AlGaN, GaN and InGaN Caused by Hybrid Inductively Coupled Plasma Etch and Photoenhanced Chemical Wet Etch by Schottky Contact Characterizations, Japanese Journal of Applied Physics, vol.42, issue.Part 1, No. 7A, pp.4207-4212, 2003. ,
DOI : 10.1143/JJAP.42.4207
AlGaN/GaN HEMT With 300-GHz <formula formulatype="inline"><tex Notation="TeX">$f_{\max}$</tex></formula>, IEEE Electron Device Letters, vol.31, issue.3, pp.195-197, 2010. ,
DOI : 10.1109/LED.2009.2038935
Development of millimeter-wave GaN HFET technology, physica status solidi (a), vol.27, issue.6, pp.2042-2048, 2007. ,
DOI : 10.1002/pssa.200674860
Barrier-Layer Scaling of InAlN/GaN HEMTs, IEEE Electron Device Letters, vol.29, issue.5, pp.422-425, 2008. ,
DOI : 10.1109/LED.2008.919377
AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance, IEEE Electron Device Letters, vol.29, issue.7, pp.661-664, 2008. ,
DOI : 10.1109/LED.2008.923318
Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures, Journal of Applied Physics, vol.87, issue.1, pp.334-344, 2000. ,
DOI : 10.1063/1.371866
Pyroelectric properties of Al(In)GaN/GaN hetero- and quantum well structures, Journal of Physics: Condensed Matter, vol.14, issue.13, p.3399, 2002. ,
DOI : 10.1088/0953-8984/14/13/302
Barrier Thickness Dependence of Electrical Properties and DC Device Characteristics of AlGaN/GaN Heterostructure Field-Effect Transistors Grown by Plasma-Assisted Molecular-Beam Epitaxy, Japanese Journal of Applied Physics, vol.43, issue.No. 9A/B, pp.1147-1149, 2004. ,
DOI : 10.1143/JJAP.43.L1147
High-mobility window for two-dimensional electron gases at ultrathin AlN???GaN heterojunctions, Applied Physics Letters, vol.90, issue.18, p.182112, 2007. ,
DOI : 10.1063/1.2736207
Molecular beam epitaxy of InAlN???GaN heterostructures for high electron mobility transistors, Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, vol.23, issue.3, pp.1204-1208, 2005. ,
DOI : 10.1116/1.1927103
Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs, IEEE Electron Device Letters, vol.22, issue.11, pp.504-506, 2001. ,
DOI : 10.1109/55.962644
AlN/GaN heterostructures grown by metal organic vapor phase epitaxy with in situ Si3N4 passivation, Journal of Crystal Growth, vol.315, issue.1, pp.204-207, 2011. ,
DOI : 10.1016/j.jcrysgro.2010.09.025
High electron mobility lattice-matched AlInN???GaN field-effect transistor heterostructures, Applied Physics Letters, vol.89, issue.6, p.62106, 2006. ,
DOI : 10.1063/1.2335390
Molecular beam epitaxy for high-performance Ga-face GaN electron devices, Semiconductor Science and Technology, vol.28, issue.7, p.74001, 2013. ,
DOI : 10.1088/0268-1242/28/7/074001
Growth and Luminescence Properties of Subsequently Grown AlInN Layers on AlN Homoepitaxial Layers by Ammonia Gas Source Molecular Beam Epitaxy, Japanese Journal of Applied Physics, vol.46, issue.6A, pp.3394-3396, 2007. ,
DOI : 10.1143/JJAP.46.3394
Molecular beam epitaxy of InAlN lattice-matched to GaN with homogeneous composition using ammonia as nitrogen source, Applied Physics Letters, vol.100, issue.7, pp.72107-72111, 2012. ,
DOI : 10.1063/1.3686922
Efficiency of NH3 as nitrogen source for GaN molecular beam epitaxy, Applied Physics Letters, vol.72, issue.3, pp.350-352, 1998. ,
DOI : 10.1063/1.120733
Optimisation de l'épitaxie sous jets moléculaires d'hétérostructures à base de GaN : application aux transistors à haute mobilité d'électrons sur substrat silicium, Thèse de doctorat, 2009. ,
Inhibition of interface pollution in AlGaN/GaN HEMT structures regrown on semi-insulating GaN templates, Journal of Crystal Growth, vol.299, issue.1, pp.103-108, 2007. ,
DOI : 10.1016/j.jcrysgro.2006.10.250
AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination, Journal of Crystal Growth, vol.309, issue.1, pp.1-7, 2007. ,
DOI : 10.1016/j.jcrysgro.2007.09.023
GaN evaporation in molecular-beam epitaxy environment, Applied Physics Letters, vol.74, issue.13, pp.1854-1856, 1999. ,
DOI : 10.1063/1.123691
Influence of nitrogen precursor and its flow rate on the quality and the residual doping in GaN grown by molecular beam epitaxy, physica status solidi (c), vol.9, issue.3-4, pp.523-526, 2012. ,
DOI : 10.1002/pssc.201100375
The effect of temperature and ammonia flux on the surface morphology and composition of InxAl1???xN epitaxial layers, Journal of Crystal Growth, vol.311, issue.13, pp.3380-3385, 2009. ,
DOI : 10.1016/j.jcrysgro.2009.04.004
Application de la microscopie à sonde locale à l'étude de la surface de, Thèse de doctorat, 2000. ,
Effect of Growth Temperature on Structural Quality of InAlN Layer Lattice Matched to GaN Grown by Metal Organic Chemical Vapor Deposition, Japanese Journal of Applied Physics, vol.51, 2012. ,
Effect of polarization fields on transport properties in AlGaN/GaN heterostructures, Journal of Applied Physics, vol.89, issue.3, pp.1783-1789, 2001. ,
DOI : 10.1063/1.1339858
AlN/GaN and (Al,Ga)N/AlN/GaN two-dimensional electron gas structures grown by plasma-assisted molecular-beam epitaxy, Journal of Applied Physics, vol.90, issue.10, pp.5196-5201, 2001. ,
DOI : 10.1063/1.1412273
Influence of the surface potential on electrical properties of AlxGa1???xN/GaN heterostructures with different Al-content: Effect of growth method, Journal of Applied Physics, vol.107, issue.5, pp.53711-53716, 2010. ,
DOI : 10.1063/1.3319585
On the origin of the two-dimensional electron gas at the AlGaN???GaN heterostructure interface, Applied Physics Letters, vol.86, issue.4, pp.42107-42110, 2005. ,
DOI : 10.1063/1.1850600
Polarization-induced electron populations, Applied Physics Letters, vol.77, issue.7, pp.990-992, 2000. ,
DOI : 10.1063/1.1288817
MBE growth of high conductivity single and multiple AlN/GaN heterojunctions, Journal of Crystal Growth, vol.323, issue.1, pp.529-533, 2011. ,
DOI : 10.1016/j.jcrysgro.2010.12.047
High electron mobility transistors based on the AlN/GaN heterojunction, Microelectronic Engineering, vol.86, issue.4-6, pp.1071-1073, 2009. ,
DOI : 10.1016/j.mee.2009.02.004
Very high channel conductivity in low-defect AlN/GaN high electron mobility transistor structures, Applied Physics Letters, vol.93, issue.8, p.82111, 2008. ,
DOI : 10.1063/1.2970991
Two-dimensional electron gases induced by polarization charges in AlN/GaN heterostructure grown by plasma-assisted molecular-beam epitaxy, Journal of Applied Physics, vol.94, issue.5, pp.3260-3263, 2003. ,
DOI : 10.1063/1.1599979
Ultrathin-barrier AlN/GaN heterostructures grown by rf plasma-assisted molecular beam epitaxy on freestanding GaN substrates, Journal of Crystal Growth, vol.380, pp.14-17, 2013. ,
DOI : 10.1016/j.jcrysgro.2013.05.029
Ultrathin InAlN/GaN heterostructures on sapphire for high on/off current ratio high electron mobility transistors, Journal of Applied Physics, vol.113, issue.21, pp.214503-214509, 2013. ,
DOI : 10.1063/1.4808260
Schottky barrier engineering in III???V nitrides via the piezoelectric effect, Applied Physics Letters, vol.73, issue.13, pp.1880-1882, 1998. ,
DOI : 10.1063/1.122312
High-power III-N HFETs on Si substrate for millimeter wave applications, presented at the 10th Int. Conf. on Nitride Semiconductors ,
105 III.2.a. HEMTs à back-barrière, p.106 ,
117 III.4.b. Isolation électrique de la couche tampon, Electroluminescence, p.125 ,
Fabrication of sub-50-nm-gate i-AlGaN/GaN HEMTs on sapphire, physica status solidi (c), vol.0, issue.7, pp.2368-2371, 2003. ,
DOI : 10.1002/pssc.200303335
Enhanced Electron Mobility in AlGaN/InGaN/AlGaN Double-Heterostructures by Piezoelectric Effect, Japanese Journal of Applied Physics Part 2-Letters, pp.799-801, 1999. ,
DOI : 10.1143/JJAP.38.L799
AlGaN/GaN/InGaN/GaN HEMTs with an InGaN-notch, physica status solidi (c), vol.84, issue.6, pp.2312-2316, 2006. ,
DOI : 10.1002/pssc.200565168
AlGaN/GaN high electron mobility transistors with InGaN back-barriers, IEEE Electron Device Letters, vol.27, issue.1, pp.13-15, 2006. ,
DOI : 10.1109/LED.2005.860882
Optimization of AlGaN/GaN HEMTs for high frequency operation, physica status solidi (a), vol.27, issue.7, pp.1845-1850, 2006. ,
DOI : 10.1002/pssa.200565384
InAlN/GaN HEMTs With AlGaN Back Barriers, IEEE Electron Device Letters, vol.32, issue.5, pp.617-619, 2011. ,
DOI : 10.1109/LED.2011.2111352
First Demonstration of High-Power GaN-on-Silicon Transistors at 40 GHz, IEEE Electron Device Letters, vol.33, issue.8, pp.1168-1170, 2012. ,
DOI : 10.1109/LED.2012.2198192
URL : https://hal.archives-ouvertes.fr/hal-00786912
Real time control of InxGa1???xN molecular beam epitaxy growth, Applied Physics Letters, vol.72, issue.9, pp.1078-1080, 1998. ,
DOI : 10.1063/1.120970
Efficiency of NH3 as nitrogen source for GaN molecular beam epitaxy, Applied Physics Letters, vol.72, issue.3, pp.350-352, 1998. ,
DOI : 10.1063/1.120733
Nanostructures (Ga,In,Al)N : croissance par épitaxie sous jets moléculaires, propriétés optiques, application aux diodes électroluminescentes, Thèse de doctorat, 2001. ,
InGaN heterostructures grown by molecular beam epitaxy:, Journal of Crystal Growth, vol.227, issue.228, pp.466-470, 2001. ,
DOI : 10.1016/S0022-0248(01)00744-8
InGaN/GaN quantum wells grown by molecular-beam epitaxy emitting from blue to red at 300 K, Applied Physics Letters, vol.77, issue.9, pp.1268-1270, 2000. ,
DOI : 10.1063/1.1289915
In surface segregation in InGaN/GaN quantum wells, Journal of Crystal Growth, vol.251, issue.1-4, pp.471-475, 2003. ,
DOI : 10.1016/S0022-0248(02)02443-0
Comparison of the In distribution in InGaN/GaN quantum well structures grown by molecular beam epitaxy and metalorganic vapor phase epitaxy, Journal of Crystal Growth, vol.262, issue.1-4, pp.145-150, 2004. ,
DOI : 10.1016/j.jcrysgro.2003.10.082
Blue-green and white color tuning of monolithic light emitting diodes, Journal of Applied Physics, vol.108, issue.7, 2010. ,
DOI : 10.1063/1.3490895
Blue Light-Emitting Diodes Grown on ZnO Substrates, Applied Physics Express, vol.6, issue.4, 2013. ,
DOI : 10.7567/APEX.6.042101
Application de la microscopie à sonde locale à l'étude de la surface de, Thèse de doctorat, 2000. ,
Quality and uniformity assessment of AlGaN/GaN quantum wells and HEMT heterostructures grown by molecular beam epitaxy with ammonia source, physica status solidi (c), vol.90, issue.356, pp.2325-2328, 2006. ,
DOI : 10.1002/pssc.200565423
Scattering mechanisms limiting two-dimensional electron gas mobility in Al0.25Ga0.75N/GaN modulation-doped field-effect transistors, Journal of Applied Physics, vol.87, issue.8, pp.3900-3904, 2000. ,
DOI : 10.1063/1.372432
AlGaN/GaN/AlGaN DH-HEMTs grown by MBE on Si(111), AlGaN/GaN/AlGaN DH-HEMTs grown by MBE on Si, pp.393-396, 2005. ,
DOI : 10.1016/j.jcrysgro.2005.01.038
Effects of AlGaN Back Barrier on AlN/GaN-on-Silicon High-Electron-Mobility Transistors, Applied Physics Express, vol.4, issue.12, p.124101, 2011. ,
DOI : 10.1143/APEX.4.124101
URL : https://hal.archives-ouvertes.fr/hal-00783378
Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices, IEEE Transactions on Electron Devices, vol.54, issue.10, pp.2589-2597, 2007. ,
DOI : 10.1109/TED.2007.904476
Impact ionization in high performance AlGaN, High Performance Devices Proceedings. IEEE Lester Eastman Conference on, pp.487-491, 2002. ,
Evidence for impact ionisation in AlGaN/GaN HEMTs with InGaN back-barrier, Electronics Letters, vol.47, issue.6, pp.405-406, 2011. ,
DOI : 10.1049/el.2010.7540
Electroluminescence characterization of AlGaN/GaN high-electron-mobility transistors, Applied Physics Letters, vol.79, issue.8, pp.1196-1198, 2001. ,
DOI : 10.1063/1.1398332
Optical study of high-biased AlGaN/GaN high-electron-mobility transistors, Journal of Applied Physics, vol.92, issue.1, pp.531-535, 2002. ,
DOI : 10.1063/1.1481973
Insights into electroluminescent emission from AlGaN???GaN field effect transistors using micro-Raman thermal analysis, Applied Physics Letters, vol.88, issue.2, 2006. ,
DOI : 10.1063/1.2163076
Reliability of GaN High-Electron-Mobility Transistors: State of the Art and Perspectives, IEEE Transactions on Device and Materials Reliability, vol.8, issue.2, pp.332-343, 2008. ,
DOI : 10.1109/TDMR.2008.923743
Extensive analysis of the luminescence properties of AlGaN/GaN high electron mobility transistors, Applied Physics Letters, vol.97, issue.6, 2010. ,
DOI : 10.1063/1.3479917
Radiative inter-valley transitions as a dominant emission mechanism in AlGaN/GaN high electron mobility transistors, Semiconductor Science and Technology, vol.27, issue.12, p.125003, 2012. ,
DOI : 10.1088/0268-1242/27/12/125003
Electroluminescence measurement of InAlAs/InGaAs HEMTs lattice-matched to InP substrates, Proceedings of 8th International Conference on Indium Phosphide and Related Materials, pp.681-684, 1996. ,
DOI : 10.1109/ICIPRM.1996.492385
Improved Performance of Highly Scaled AlGaN/GaN High-Electron-Mobility Transistors Using an AlN Back Barrier, Applied Physics Express, vol.6, issue.5, 2013. ,
DOI : 10.7567/APEX.6.051201
The effect of InxGa1???xN back-barriers on the dislocation densities in Al0.31Ga0.69N/AlN/GaN/InxGa1???xN/GaN heterostructures (0.05???????x???????0.14), 31Ga0.69N/AlN/GaN/InxGa1?xN, pp.224-227, 2013. ,
DOI : 10.1016/j.cap.2012.07.012
AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD, physica status solidi (c), vol.201, issue.9, pp.2982-2984, 2008. ,
DOI : 10.1002/pssc.200779165
The impact of surface states on the DC and RF characteristics of AlGaN/GaN HFETs, IEEE Transactions on Electron Devices, vol.48, issue.3, pp.560-566, 2001. ,
DOI : 10.1109/16.906451
The effect of surface passivation on the microwave characteristics of undoped AlGaN/GaN HEMTs, IEEE Electron Device Letters, vol.21, issue.6, pp.268-270, 2000. ,
DOI : 10.1109/55.843146
Impact of Moisture and Fluorocarbon Passivation on the Current Collapse of AlGaN/GaN HEMTs, IEEE Electron Device Letters, vol.33, issue.10, pp.1378-1380, 2012. ,
DOI : 10.1109/LED.2012.2206556
Effects of oxidation on surface chemical states and barrier height of AlGaN/GaN heterostructures, Applied Physics Letters, vol.97, issue.22, pp.222104-222104, 2010. ,
DOI : 10.1063/1.3522649
AlGaN/GaN high electron mobility transistors for protein?peptide binding affinity study, Biosensors and Bioelectronics, vol.41, pp.717-722, 2013. ,
Gas Sensing with AlGaN/GaN 2DEG Channels, Procedia Engineering, vol.25, pp.1417-1420, 2011. ,
DOI : 10.1016/j.proeng.2011.12.350
Electronic surface and dielectric interface states on GaN and AlGaN, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.31, issue.5, pp.50807-50836, 2013. ,
DOI : 10.1116/1.4807904
Conductivity and Hall effect measurements on intentionally undoped and doped AlGaN/GaN heterostructures before and after passivation, Applied Physics Letters, vol.83, issue.26, pp.5455-5457, 2003. ,
DOI : 10.1063/1.1637154
A comparative study of effects of SiNx deposition method on AlGaN/GaN heterostructure field-effect transistors, Applied Physics Letters, vol.94, issue.5, pp.53513-53516, 2009. ,
DOI : 10.1063/1.3079798
deposition of a Si3N4 surface layer, Journal of Applied Physics, vol.98, issue.5, pp.54501-54506, 2005. ,
DOI : 10.1063/1.2008388
Electrical and Optical Characterization of AlGaN/GaN HEMTs with In??Situ and Ex??Situ Deposited SiN x Layers, Electrical and Optical Characterization of AlGaN/GaN HEMTs with In Situ and Ex Situ Deposited SiNx Layers, pp.2452-2458, 2010. ,
DOI : 10.1007/s11664-010-1343-9
Effect of Dielectric Thickness on Power Performance of <emphasis emphasistype="roman">AlGaN/GaN HEMTs </emphasis>, IEEE Electron Device Letters, vol.30, issue.4, pp.313-315, 2009. ,
DOI : 10.1109/LED.2009.2012444
Cleaning of GaN surfaces, Journal of Electronic Materials, vol.46, issue.5, pp.805-810, 1996. ,
DOI : 10.1007/BF02666640
Cleaning of AlN and GaN surfaces, Journal of Applied Physics, vol.84, issue.9, pp.5248-5260, 1998. ,
DOI : 10.1063/1.368814
Impact of plasma pre-treatment before SiNx passivation on AlGaN/GaN HFETs electrical traps, Solid-State Electronics, vol.49, issue.10, pp.1589-1594, 2005. ,
DOI : 10.1016/j.sse.2005.06.025
URL : https://hal.archives-ouvertes.fr/hal-00154914
Influence of plasma treatments on the properties of GaN/AlGaN/GaN HEMT structures, physica status solidi, vol.9, pp.1096-1098, 2012. ,
Impact of <formula formulatype="inline"><tex Notation="TeX">$\hbox{N}_{2}$</tex></formula> Plasma Power Discharge on AlGaN/GaN HEMT Performance, IEEE Transactions on Electron Devices, vol.59, issue.2, pp.374-379, 2012. ,
DOI : 10.1109/TED.2011.2176947
Influence of NH3-Plasma Pretreatment before Si3N4 Passivation Film Deposition on Current Collapse in AlGaN/GaN-HEMTs, IEICE Transactions on Electronics, vol.89, issue.7, pp.1052-1056, 2006. ,
DOI : 10.1093/ietele/e89-c.7.1052
Hydrogen passivation of deep levels in n???GaN, Applied Physics Letters, vol.77, issue.10, pp.1499-1501, 2000. ,
DOI : 10.1063/1.1290042
Passivation of AlGaN/GaN heterostructures with silicon nitride for insulated gate transistors, Proceedings 2000 IEEE/ Cornell Conference on High Performance Devices (Cat. No.00CH37122), pp.208-214, 2000. ,
DOI : 10.1109/CORNEL.2000.902540
Short-Channel Effect Limitations on High-Frequency Operation of AlGaN/GaN HEMTs for T-Gate Devices, IEEE Transactions on Electron Devices, vol.54, issue.10, pp.2589-2597, 2007. ,
DOI : 10.1109/TED.2007.904476
Hétérostructures AlGaN/GaN et InAlN/GaN pour la réalisation de HEMTs de puissance hyperfréquence en bande Ka, Thèse de doctorat ,