D. Glöß, P. Frach, C. Gottfried, S. Klinkenberg, J. S. Liebig et al., Multifunctional high-reflective and antireflective layer systems with easy-to-clean properties, Thin Solid Films, vol.516, issue.14, pp.4487-4496, 2008.
DOI : 10.1016/j.tsf.2007.05.097

M. Ritala, P. Kalsi, D. Riihelä, K. Kukli, M. Leskelä et al., Thin Films by Atomic Layer Deposition, Chemistry of Materials, vol.11, issue.7, pp.1712-1753, 1999.
DOI : 10.1021/cm980760x

W. F. Moulder, P. E. Sobol, and K. D. Bomben, Hand book of X-ray photoelectron spectroscopy, Edité par J. Chastain. Publié par Perkin-Elmer corporation, p.90, 1992.

M. Grosser, M. Münch, H. Seidel, C. Bienert, A. Roosen et al., The impact of substrate properties and thermal annealing on tantalum nitride thin films, Applied Surface Science, vol.258, issue.7, pp.2894-99, 2012.
DOI : 10.1016/j.apsusc.2011.11.003

S. J. Wu, B. Houng, and B. Huang, Effect of growth and annealing temperatures on crystallization of tantalum pentoxide thin film prepared by RF magnetron sputtering method, Journal of Alloys and Compounds, vol.475, issue.1-2, p.488, 2009.
DOI : 10.1016/j.jallcom.2008.07.126

F. Urbach, The Long-Wavelength Edge of Photographic Sensitivity and of the Electronic Absorption of Solids, Physical Review, vol.92, issue.5, p.1324, 1953.
DOI : 10.1103/PhysRev.92.1324

R. Swanepoel, Determination of the thickness and optical constants of amorphous silicon, Journal of Physics E: Scientific Instruments, vol.16, issue.12, p.1214, 1983.
DOI : 10.1088/0022-3735/16/12/023

J. H. Hsieh, C. Li, and H. C. Liang, Structures and photocatalytic behavior of tantalum-oxynitride thin films, Thin Solid Films, vol.519, issue.15, p.4699, 2011.
DOI : 10.1016/j.tsf.2011.01.018

E. Langereis, S. B. Heil, H. C. Knoops, W. Keuning, and M. , spectroscopic ellipsometry as a versatile tool for studying atomic layer deposition, Journal of Physics D: Applied Physics, vol.42, issue.7, p.73001, 2009.
DOI : 10.1088/0022-3727/42/7/073001

K. Maeda and K. Domen, New Non-Oxide Photocatalysts Designed for Overall Water Splitting under Visible Light, The Journal of Physical Chemistry C, vol.111, issue.22, p.7851, 2007.
DOI : 10.1021/jp070911w

I. Karmakov, A. Konova, E. Atanassova, and A. Paskaleva, Spectroscopic ellipsometry of very thin tantalum pentoxide on Si, Applied Surface Science, vol.255, issue.22, p.9211, 2009.
DOI : 10.1016/j.apsusc.2009.07.014

M. Houssa, V. V. Afanas-'ev, A. Stesmans, and M. M. Heyns, Variation in the fixed charge density of SiO[sub x]/ZrO[sub 2] gate dielectric stacks during postdeposition oxidation, Applied Physics Letters, vol.77, issue.12, p.1885, 2000.
DOI : 10.1063/1.1310635

R. Fix, R. G. Gordon, and D. M. Hoffman, Chemical vapor deposition of vanadium, niobium, and tantalum nitride thin films, Chemistry of Materials, vol.5, issue.5, p.614, 1993.
DOI : 10.1021/cm00029a007

X. He, J. Wu, L. Zhao, J. Meng, X. Gao et al., Synthesis and optical properties of tantalum oxide films prepared by ionized plasma-assisted pulsed laser deposition, Solid State Communications, vol.147, issue.3-4, p.90, 2008.
DOI : 10.1016/j.ssc.2008.05.007

Y. Lee, J. Kwak, B. Gang, H. Kim, B. Choi et al., Photo-Induced Atomic Layer Deposition of Tantalum Oxide Thin Films from Ta(OC[sub 2]H[sub 5])[sub 5] and O[sub 2], Journal of The Electrochemical Society, vol.151, issue.1, p.52, 2004.
DOI : 10.1149/1.1629096

N. Novkovski, E. Atanassova, and A. Paskaleva, Stress-induced leakage currents of the RF sputtered Ta2O5 on N-implanted silicon, Applied Surface Science, vol.253, issue.9, p.4396, 2007.
DOI : 10.1016/j.apsusc.2006.09.041