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P. Aps-aoi-tudi-et-aitis-les-ooditios-de-dpôth-par, 2 par LPCVD est favorisée en raison de la concentration en Si élevée de la matrice Des densités surfaciques de nc-Si supérieures à 10 12 cm -2 ont ainsi été atteintes, même pour des temps de dépôt courts ou des débits de silane faibles. Ces premiers résultats indiquent la faisabilité de ce type de structure Une étude approfondie sur le couple nc-Si/nitrure de silicium a ensuite été menée. Les propriétés structurales, optiques et électriques de couches de nitrure contenant des nc-Si ont été aaatttises à paati d'u laage entail de techniques. Après avoir estimé la taille des nc-Si par spectroscopie Raaaa, la dooolutio des spettes XP " ous a peis d'epliue les processus de formation des nc-Si lors du recuit et de proposer un modèle pour décrire la structure des interfaces nc-Si/a-Si 3 N 4 . Les propriétés optiques des nc-Si ont ensuite été déterminées par ellipsométrie spectroscopique et spectrophotométrie UV- Vis. L'laagisseet du gap, le lissage des oostates dilettiues et l'augetatio du oeffiiet d'aasoptio au failes egies aae la diiutio de la taille des paatiules suggget u effet de confinement quantique au sein des nc-Si. Des mesures de photoluminescence résolue en temps nous ont peis de ooluue ue l'utilisatioo d'ue atie de ittue est peu appopie à l''tude de l''issioo optiue des nc-Si en raison des nombreux défauts radiatifs et non radiatifs présents dans la matrice et aux interfaces

. Enfin, les mécanismes de transport des porteurs de charge à travers la couche nanocomposite ont été étudiés à partir de mesures courant-tension. En raison de son caractère percolé, la couche se comporte de façon analogue à une couche de Si polycristallin avec une faible concentration de liaisons pendantes du Si, effet de photoconduction attribué aux nc-Si est observé

_. Mots-cles, nanocristaux de silicium, LPCVD, PECVD, nitrure de silicium, carbure de silicium, photovoltaïque. DISCIPLINE : microélectroniques et microsystèmes